Matches 101 - 149 out of 149 < 1 2 3
Match Document Document Title
6201290 Resistor having moisture resistant layer  
A resistor comprising a substrate typically made of aluminum, a pair of top electrode layers made of a thin noble metal film disposed on both ends of the top face of the substrate, and a resistance...
6194764 Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge  
An integrated semiconductor circuit has a protection structure for protecting against electrostatic discharge. The protection element has at least one integrated vertical protection transistor,...
6163056 Semiconductor device having electrostatic discharge  
A semiconductor device includes a semiconductor substrate having a major surface, a source region of a second conductivity type, a drain region of the second conductivity type, and a first...
6111304 Semiconductor diffused resistor and method for manufacturing the same  
According to the present invention, a semiconductor device, and method for producing the same, is provided comprising: a resistance component formed in a component active region enclosed by a...
6081014 Silicon carbide chrome thin-film resistor  
A thin-film resistor is formed from silicon, carbon, and chromium. The resistivity of the thin-film resistor, and therefore the resistance and temperature coefficient of resistance (TCR) of the...
6057577 Component of protection of an integrated MOS power transistor against voltage gradients  
The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has...
6054742 Structure for cross coupled thin film transistors and static random access memory cell  
A pair of thin film transistors formed in adjacent layers of polysilicon. The gate of the first TFT and the source, drain and channel regions of the second TFT are formed in the first polysilicon...
6025632 Semiconductor integrated circuit with tungston silicide nitride thermal resistor  
A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate...
6018183 Structure of manufacturing an electrostatic discharge protective circuit for SRAM  
A structure of manufacturing an electrostatic discharge protective circuit for SRAM. In the structure, a MOS transistor is coupled between an input port and an internal circuit, and an input...
6015992 Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits  
A bistable SCR-like switch (41) protects a signal line (65) of an SOI integrated circuit (40) against damage from ESD events. The bistable SCR-like switch (41) is provided by a first and a second...
6013934 Semiconductor structure for thermal shutdown protection  
A semiconductor structure having a temperature sensor placed in close proximity to gate and source and/or drain electrodes. The sensor is compatible with conventional semiconductor processing and...
5962902 Semiconductor CMOS device with circuit for preventing latch-up  
A semiconductor device has a substrate bias generating circuit for generating a substrate bias to be applied to a p-type semiconductor substrate, a CMOS circuit formed on the semiconductor...
5932914 Semiconductor protection device formed inside a well having contact with a buried layer  
The present invention provides an electrostatic breakdown protecting device which has a high electrostatic breakdown resistance, a high latch up resistance and an excellent protective ability and...
5903033 Semiconductor device including resistance element with superior noise immunity  
A well region is provided on a doped semiconductor layer. A resistor element is formed on the well region and a fixed voltage level is applied. A parasitic capacitance is formed between the well...
5895960 Thin oxide mask level defined resistor  
An integrated circuit includes a resistor formed in a doped tub located in a semiconductor substrate. A first highly doped resistor contact region extends outward from the associated contact...
5895958 Input protection circuit for use in semiconductor device having an improved electrostatic breakdown voltage  
In an input protection circuit, a bipolar protection device is constituted of a semiconductor substrate of a first conductivity type, a first diffused layer of a second conductivity type formed in...
5874770 Flexible interconnect film including resistor and capacitor layers  
A method for fabricating a flexible interconnect film includes applying a resistor layer over one or both surfaces of a dielectric film; applying a metallization layer over the resistor layer with...
5831326 Semiconductor device with resistive load element  
A method for fabricating a resistive load element for a semiconductor device can be used with standard semiconductor processes. A layer of second level poly is deposited and lightly doped P-type. A...
5828078 Electrostatic discharge protection using high temperature superconductors  
The present invention presents an electrostatic discharge and power surge protected circuit board (10) and method for providing an electrostatic discharge and power surge protected circuit board....
5814867 Semiconductor device and fabrication method thereof  
A semiconductor device includes a pair of transistors each having an active region defined on a surface of a semiconductor substrate, a gate insulation film formed on the active region, a gate...
5808342 Bipolar SCR triggering for ESD protection of high speed bipolar/BiCMOS circuits  
The invention provides a Bipolar structure such as a silicon controlled rectifier (SCR) that exhibits advantageously low triggering and holding voltages for use in high speed (e.g., 900 MHz->2...
5760447 Semiconductor device having pull-up or pull-down resistance  
A semiconductor device includes a CMOSFET, including n-channel and p-channel MOSFETs. A terminal is connected to a node connecting the drains of the MOSFETs. A pull-up or pull-down resistor is...
5760446 Electrostatic discharge structure of semiconductor device  
An electrostatic discharge structure of a semiconductor device is provided. The structure includes a semiconductor substrate doped with P-type impurities; an N-type well formed in a predetermined...
5668095 Detergent composition with suds suppressing system  
Detergent compositions are described which comprise a suds suppressing system consisting of a mixture of a silicone oil and a 2-alkyl-alcanol, or mixtures thereof.
5589694 Semiconductor device having a thin film transistor and thin film diode  
Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a...
5557130 ESD input protection arrangement  
An arrangement for protecting an input of a monolithic integrated circuit against ESD events, comprises a thick field bipolar main transistor adapted to breakdown under ESD stress to dissipate ESD...
5554873 Semiconductor device having polysilicon resistor with low temperature coefficient  
A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a double-level polysilicon process. The...
5545910 ESD proctection device  
An ESD protection device is disclosed having a first region of a first conductivity type. A second region, which is heavily doped, of a second conductivity type is disposed in the first region. The...
5500547 Integrated semiconductor device with temperature sensing circuit and method for operating same  
A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the...
5468978 Forming B.sub.1-x C.sub.x semiconductor devices by chemical vapor deposition  
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio...
5438537 Static random access memory which has a pair of thin film transistors and wherein the capacitance and resistance between the gate electrodes and the conductor layers are increased so as to reduce the time constant between them  
A static random access memory of the thin film transistor load type which is enhanced in soft error resistance without involving an increase of the area of a cell is disclosed. A conductor layer is...
5400277 Semiconductor on insulator static random access meory cell utilizing polysilicon resistors formed in trenches  
A resistor is connected to the source/drain of a transistor and used as a load element of a memory cell. A trench is formed which extends from a top of the wafer through an isolation region of the...
5351213 Integrated semiconductor memory device utilizing a test circuit  
A semiconductor memory device of the type having a test circuit incorporated integrally therewith generates test data to be batch written into the device's memory cells. The memory device includes...
5327224 Semiconductor device with hydrogen ion intercepting layer  
A thin first insulating oxide film is formed on a semiconductor substrate. A thick second insulating oxide film is formed on a semiconductor substrate. A first polysilicon resistance film is formed...
5304802 Semiconductor device including overvoltage protective circuit  
A semiconductor device including a switching device such as a MOSFET or an IGBT, and an avalanche device for protecting the switching device by generating an avalanche current when an overvoltage...
5296726 High value resistive load for an integrated circuit  
A linear and symmetrical gigaohm resistive load structure for an integrated circuit is implemented using a thin film accumulation mode MOSFET configured as a split gate symmetrically off device....
5150187 Input protection circuit for CMOS devices  
A shared protection circuit protects an MOS circuit, herein called a chip, from the destructive effects of electrostatic discharges conducted by any of the circuits input/output pins. The shared...
4937639 Input protector device for semiconductor device  
An input protector device for a semiconductor device such as a CMOS device, in which a first resistor is formed on an insulating film of a semiconductor substrate, and a second resistor is formed...
4872045 Input protection device for C-MOS device  
An input protection device for a C-MOS device having an n-type semiconductor substrate and a p-type well region. The device comprises a diode consisting of the p-type well region and an n + -type...
4835416 V.sub.DD load dump protection circuit  
The present invention provides power supply load dump protection circuitry for insuring that supply voltages that are applied to the supply pad of a low current logic circuit and which exceed a...
4777518 Semiconductor device including gate protection circuit with capacitor under input pad  
A semiconductor device including a gate protection circuit in which a N-type or P-type high-concentration impurity semiconductor region is formed under the input terminal such as a bonding pad and...
4733285 Semiconductor device with input and/or output protective circuit  
An MOSIC is provided with an input and/or output protective circuit which includes a first semiconductor region formed in a semiconductor substrate with a PN junction and electrically coupled...
4691217 Semiconductor integrated circuit device  
Disclosed is a semiconductor integrated circuit device comprising a protective circuit including a MOSFET which is connected directly to a bonding pad and which is connected in the form of a diode,...
4616243 Gate protection for a MOSFET  
This invention relates to a protection device of a semiconductor device. The present invention can prevent the drop of a gate breakdown voltage due to miniaturization of a device without impeding...
4514646 Semiconductor integrated circuit device including a protective resistor arrangement for output transistors  
An abnormal surge voltage such as frictional static electricity is often applied to the external terminals of a MOSIC. In the past, the output MOS transistor in the MOSIC during normal handling of...
4476476 CMOS Input and output protection circuit  
A CMOS gate protection diode clamping the input terminal to substrate potential is prevented from injecting carriers into the substrate and causing SCR latchup by forming the diode as a well to...
4288829 Protective circuit on insulating substrate for protecting MOS integrated circuit  
A MOS integrated circuit comprises a MOS IC body including at least one MOS transistor made of an island-like semiconductor layer formed on an insulating substrate, and a protective circuit...
4261004 Semiconductor device  
On the surface of an insulating film formed on the surface of a semiconductor substrate on which an MOS type semiconductor device to be protected is formed, there are formed a first polycrystal...
4062039 Semi-conductor integrated circuit  
An improved semi-conductor integrated circuit wherein the likelihood of permanent breakdown of reverse junctions in the integrated circuitry in response to unexpected high voltages applied thereto...
Matches 101 - 149 out of 149 < 1 2 3