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7608896 Semiconductor device  
A semiconductor device has an n-channel MIS transistor and a p-channel MIS transistor on a substrate. The n-channel MIS transistor includes a p-type semiconductor region formed on the substrate, a...
7605059 Semiconductor device and method of manufacturing the semiconductor device  
A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive...
7598605 Semiconductor device having capacitive insulation means and communication terminal using the device  
A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically...
7589566 Semiconductor device provided with antenna ratio countermeasure circuit  
A CMOS LSI includes an inverter including first and second MOS transistors, a relatively long metal interconnection connected to an input node of the inverter, first and second diodes releasing...
7589386 Semiconductor device and manufacturing method thereof  
A semiconductor device including a first field effect transistor having a source, a first conductivity type drain, a gate, and a first conductivity type channel layer formed beneath the gate and...
7589384 Semiconductor device including an electrostatic discharge protection element  
It is made possible to easily set a protection voltage even when a semiconductor device to be protected includes a gate insulating film having a low dielectric breakdown voltage. A semiconductor...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7579669 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof  
A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has...
7576961 Electrostatic discharge protection circuit using triple welled silicon controlled rectifier  
Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate...
7554158 Semiconductor device having analog and digital circuits  
An N-type deep well is used to protect a circuit from a noise. However, a noise with a high frequency propagates through the N-type deep well, and as a result, the circuit that should be protected...
7545001 Semiconductor device having high drive current and method of manufacture therefor  
A semiconductor device including an isolation region located in a substrate, an NMOS device located partially over a surface of the substrate, and a PMOS device isolated from the NMOS device by the...
7541647 Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device  
In a semiconductor integrated circuit device and a method of designing the same, design information about circuit cells each having a desired function are described as objects according to selected...
7541235 Method for providing a programmable electrostatic discharge (ESD) protection device  
A method for providing a programmable electrostatic discharge (ESD) protection device is provided. The method includes providing a source diffusion in a substrate, providing a deeper body diffusion...
7521713 Semiconductor device having electrostatic discharge element  
A semiconductor device includes a laminated substrate; a removal portion; a cavity; a first semiconductor element; and a second semiconductor element. In the laminated substrate, a bulk layer, an...
7511345 Bulk resistance control technique  
The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region...
7511338 Semiconductor device and manufacturing method of the same  
An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its...
7504693 Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering  
Structures and methods of manufacturing are disclosed of dislocation free stressed channels in bulk silicon and SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) devices by...
7482671 MOS semiconductor device isolated by a device isolation film  
A MOS semiconductor device isolated by a trench device isolation region includes a p-channel MOS field effect transistor having a source/drain region with a length in the channel direction that is...
7476941 Semiconductor integrated circuit device and fabrication process thereof  
A semiconductor integrated circuit includes an n-channel MOS transistor and a p-channel MOS transistor formed respectively in first and second device regions of a substrate, the n-channel MOS...
7456477 Electrostatic discharge device and method  
The high current capabilities of a lateral npn transistor for application as a protection device against degradation due to electrostatic discharge (ESD) events are improved by adjusting the...
7449751 High voltage operating electrostatic discharge protection device  
A high voltage operating electrostatic discharge protection device is provided. The high voltage operating electrostatic discharge protection device includes: a first gate structure and a second...
7439590 Semiconductor device  
A semiconductor device features connecting gate patterns of all transistors to a N+ or +P junction by the first connected wiring layer to prevent degradation of characteristics of the semiconductor...
7429774 Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof  
An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well...
7423324 Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the same  
In a double-gate MOS transistor, a substrate, an insulating layer, and a semiconductor layer are formed or laminated in that order, an opening extending to the insulating layer is formed in the...
7417303 System and method for ESD protection  
An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation...
7403361 Level conversion circuit and semiconductor integrated circuit device employing the level conversion circuit  
In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down...
7402846 Electrostatic discharge (ESD) protection structure and a circuit using the same  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has...
7385253 Device for electrostatic discharge protection and circuit thereof  
Disclosed herein are a device for electrostatic protection and circuit thereof. According to the present invention, a device for electrostatic discharge protection comprises first to third wells...
7365386 Semiconductor device and method of manufacturing the semiconductor device  
A semiconductor device having improved reliability is provided. The semiconductor device has a pixel portion. The pixel portion has a TFT and a storage capacitor. The TFT and the storage capacitor...
7361957 Device for electrostatic discharge protection and method of manufacturing the same  
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes...
7355250 Electrostatic discharge device with controllable holding current  
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped...
7345345 Semiconductor device  
A CMOS semiconductor device having a triple well structure which can block latch-up by preventing parasitic thyristors from turning on is offered with reduced layout area. The CMOS semiconductor...
7315066 Protect diodes for hybrid-orientation substrate structures  
A semiconductor structure and method for forming the same. The structure includes a hybrid orientation block having first and second silicon regions having different lattice orientations. The first...
7315063 CMOS transistor and method of manufacturing the same  
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor...
7298010 Radiation-hardened transistor and integrated circuit  
A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking...
7298009 Semiconductor method and device with mixed orientation substrate  
A semiconductor device includes a semiconductor body having semiconductor material of a first crystal orientation. A first transistor is formed in the semiconductor material of the first crystal...
7298008 Electrostatic discharge protection device and method of fabricating same  
Disclosed are a silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an...
7294935 Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide  
Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain...
7288822 Semiconductor structure and fabricating method thereof  
A semiconductor structure is disclosed, including a substrate having therein a first well of a first conductivity type and a second well of a second conductivity type, a first MOS transistor of the...
7288789 Semiconductor device having thin film transistor and light-shielding film  
A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor...
7285837 Electrostatic discharge device integrated with pad  
A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the...
7268398 ESD protection cell with active pwell resistance control  
In an NMOS device, the turn-on voltage or the triggering voltage is reduced by adding an NBL connected to an n-sinker and contacted through an n+ region, which is connected to a bias voltage. The...
7253453 Charge-device model electrostatic discharge protection using active device for CMOS circuits  
An integrated circuit for providing electrostatic discharge protection that includes a contact pad, a CMOS device including a transistor having a substrate, and a CDM clamp for providing...
7250660 ESD protection that supports LVDS and OCT  
Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least...
7242061 Semiconductor device  
The invention provides semiconductor devices having an output circuit in which transistors do not fail to achieve their original capability, and electrostatic breakdown is difficult to occur. A...
7242059 Semiconductor device having DMOS and CMOS on single substrate  
A semiconductor device includes a P-type semiconductor substrate, a P-channel DMOS transistor, a CMOS transistor. The P-channel DMOS transistor is disposed on the P-type semiconductor substrate and...
7235846 ESD protection structure with SiGe BJT devices  
The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT)...
7230303 Semiconductor memory device with reduced soft error rate (SER) and method for fabricating same  
The present invention provides a semiconductor memory device with reduced soft error rate (SER) and a method for fabricating such a device. The semiconductor memory device includes a plurality of...
7217984 Divided drain implant for improved CMOS ESD performance  
A divided drain implant structure for transistors used for electrostatic discharge protection is disclosed. At least two transistors are formed close to each other on a substrate with their gates...
7217980 CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection  
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present...
Matches 1 - 50 out of 401 1 2 3 4 5 6 7 8 9 >