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7629652 |
Semiconductor device with signal wirings that pass through under the output electrode pads and dummy wirings near the peripheral portion
Signal lines which provide electric connections from an internal circuit formed on a main surface of a semiconductor chip and including, for example, MIS transistor to protective elements...
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7629210 |
Method for fabricating an ESD protection apparatus for discharging electric charge in a depth direction
To make electric current concentration and electric field concentration hardly take place in junction parts even in case of performing miniaturization and to achieve triggering at low voltage. An...
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7624365 |
Semiconductor integrated device and apparatus for designing the same
A semiconductor integrated device includes a plurality of power system circuit units, a first circuit unit to which electric power is supplied from first power supply wiring, and first ground...
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7622792 |
Semiconductor device and method of manufacturing the same
A conductive region electrically connected to a buffer coat film is formed on at least one corner of a semiconductor substrate, so that electricity charged on a package seal resin or a surface of...
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7622775 |
System for ESD protection with extra headroom in relatively low supply voltage integrated circuits
An ESD protection system providing extra headroom at an integrated circuit (IC) terminal pad. The system includes an ESD protection circuit having one or more first diodes coupled in series between...
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7619696 |
Liquid crystal display panel
In an active matrix type liquid crystal display panel of the invention, an inner shorting line that is thicker than the scan lines and picture lines is disposed so as to surround the periphery of a...
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7619284 |
Over charge protection device
An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided...
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7619262 |
Method and device for electrostatic discharge protection
Electrostatic discharge (ESD) protection is provided for an integrated circuit. In an aspect, a dynamic region having doped regions is formed on an epitaxy layer and substrate, and interconnects...
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7615826 |
Electrostatic discharge protection semiconductor structure
An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit...
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7612431 |
Trench polysilicon diode
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second...
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7608894 |
Electrostatic discharge protection device
An electrostatic discharge (ESD) protection device for providing an ESD path between two circuitries is provided. Each circuitry has a power supply terminal and a ground terminal. The protection...
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7605059 |
Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive...
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7602022 |
Surge voltage protection diode with controlled p-n junction density gradients
To prevent the destruction of a semiconductor element due to negative resistance, and to reduce the dynamic resistance of a static electricity prevention diode, the ratio of the maximum electric...
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7601990 |
Method and apparatus for electrostatic discharge protection having a stable breakdown voltage and low snapback voltage
Electrostatic discharge (ESD) protection is provided for an integrated circuit. Snap back from a lower initial critical voltage and critical current is provided, as compared to contemporary...
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7598605 |
Semiconductor device having capacitive insulation means and communication terminal using the device
A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically...
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7598584 |
Infrared solid-state image pickup apparatus and a production method thereof
An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN...
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7598575 |
Semiconductor die with reduced RF attenuation
The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly...
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7598538 |
ESD protecting circuit and manufacturing method thereof
An ESP protecting circuit and a manufacturing method thereof are provided. The ESP protecting circuit includes a device isolation layer, first and second high-concentration impurity regions, a...
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7595537 |
MOS type semiconductor device having electrostatic discharge protection arrangement
In a semiconductor device, a well region is formed in a semiconductor substrate, a transistor-formation region is defined in the well region. An electrostatic discharge protection device is...
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7592687 |
Device and method for preventing an integrated circuit from malfunctioning due to surge voltage
A device and method for preventing an integrated circuit from malfunctioning due to a surge voltage are provided. The device which is interposed between a node and a ground in the integrated...
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7592673 |
ESD protection circuit with isolated diode element and method thereof
An ESD protection circuit ( 20 ) includes an ESD device ( 24 ) and an isolation diode element ( 30 ). The ESD device includes a drain-source junction isolated ESD transistor ( 26,28 ). The...
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7589384 |
Semiconductor device including an electrostatic discharge protection element
It is made possible to easily set a protection voltage even when a semiconductor device to be protected includes a gate insulating film having a low dielectric breakdown voltage. A semiconductor...
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7589377 |
Gate structure with low resistance for high power semiconductor devices
In accordance with an embodiment of the present invention, a gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device includes a dielectric layer formed into a U-shape having side walls...
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7589308 |
Method and apparatus for regulating photo currents induced by dose rate events
A method and apparatus for regulating photocurrents is described. A photocurrent regulator may include a transistor having an associated cross-sectional area. The photocurrent regulator is coupled...
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7582938 |
I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
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7582937 |
ESD protection circuit
An ESD protection circuit includes a substrate, diode device, first snapback device, ring structure, second snapback device and a control circuit. The diode device is formed in the substrate. The...
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7582936 |
Electro-static discharge protection circuit and method for fabricating the same
An ESD protection circuit using an N-type extended drain silicon controlled rectifier (N-EDSCR) and a method for fabricating the same are provided. An electro-static discharge (ESD) protection...
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7579658 |
Devices without current crowding effect at the finger's ends
ESD protection devices without current crowding effect at the finger's ends. It is applied under MM ESD stress in sub-quarter-micron CMOS technology. The ESD discharging current path in the NMOS or...
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7579632 |
Multi-channel ESD device and method therefor
In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
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7576961 |
Electrostatic discharge protection circuit using triple welled silicon controlled rectifier
Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate...
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7576396 |
Synchronous substrate injection clamp
In accordance with the principles of the invention, an integrated circuit comprises a substrate having a first FET formed on the substrate. The first FET has a first terminal coupleable to a load,...
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7573102 |
ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad
In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a...
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7566935 |
ESD structure without ballasting resistors
An electrostatic discharge (ESD) structure connected to a bonding pad in an integrated circuit comprising: a P-type substrate with one or more first P+ regions connected to a low voltage supply...
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7564101 |
Semiconductor device for protecting a circuit formed on a semiconductor chip from destruction caused by an electrostatic discharge
A semiconductor device includes a Zener diode connected between an outside terminal and ground, and a resistor connected to the Zener diode in series. The Zener diode and the resistor divide a...
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7563653 |
ESD protection for high voltage applications
An electrostatic discharge (ESD) protection device includes a diode located in a substrate and an N-type metal oxide semiconductor (NMOS) device located in the substrate adjacent the diode, wherein...
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7560778 |
Charge modulation network for multiple power domains for silicon-on-insulator technology
An SOI integrated circuit includes ESD protection on an SOI chip. A first power domain and a second power domain are provided in the SOI chip. In one embodiment, a charge modulation network in the...
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7560777 |
Protection element and method of manufacture
An electrostatic discharge (“ESD”) protection circuit having dynamically configurable series-connected diodes and a method for manufacturing the ESD protection circuit. A doped region of P-type...
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7557414 |
Semiconductor device and method for manufacturing the same
In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate...
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7557413 |
Serpentine ballasting resistors for multi-finger ESD protection device
This invention discloses a ballasting resistor for an electrostatic discharge (ESD) device that comprises at least one first active region forming a source/drain of an ESD discharge transistor, at...
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7554160 |
Semiconductor device
A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region...
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7554158 |
Semiconductor device having analog and digital circuits
An N-type deep well is used to protect a circuit from a noise. However, a noise with a high frequency propagates through the N-type deep well, and as a result, the circuit that should be protected...
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7550820 |
Reverse-biased PN diode decoupling capacitor
This invention discloses a decoupling capacitor in an integrated circuit, comprising a plurality of dedicated PN diodes with a total junction area greater than one tenth of a total active area of...
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7545017 |
Wafer level package for surface acoustic wave device and fabrication method thereof
A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top...
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7545005 |
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
A semiconductor device is provided which is capable of avoiding malfunction and latchup breakdown resulting from negative variation of high-voltage-side floating offset voltage (VS). In the upper...
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7541648 |
Electrostatic discharge (ESD) protection circuit
An electrostatic discharge (ESD) protection circuit that includes a parallel connection of parasitic vertical and lateral bipolar junction transistors (BJTs) each with a floating base and a metal...
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7541235 |
Method for providing a programmable electrostatic discharge (ESD) protection device
A method for providing a programmable electrostatic discharge (ESD) protection device is provided. The method includes providing a source diffusion in a substrate, providing a deeper body diffusion...
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7538394 |
Compound semiconductor switch circuit device
High-resistance elements are connected as parts of a control resistor between a switching element and a protecting element immediately near the switching element and between adjacent protecting...
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7528449 |
Semiconductor device including ESD protective element
A semiconductor device includes a plurality of gate electrodes, source and drain regions, a plurality of source contacts, a plurality of drain contacts, substrate contacts, and a salicide block....
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7525159 |
Turn-on-efficient bipolar structures for on-chip ESD protection
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well...
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7518190 |
Grounding front-end-of-line structures on a SOI substrate
Structures and a method are disclosed for grounding gate-stack and/or silicon active region front-end-of-line structures on a silicon-on-insulator (SOI) substrate, which may be used as test...
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