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7151281 Light-emitting diode structure with electrostatic discharge protection  
A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second...
7151298 Electrostatic discharge protection network having distributed components  
An electrostatic discharge protection network comprising electrostatic discharge (ESD) clamp devices distributed between turns of a coil shaped inductor. The inductance of the coil shaped inductor...
7145204 Guardwall structures for ESD protection  
A semiconductor circuit for protecting an I/O pad against ESD events comprising a pMOS transistor ( 510 ) in a first n-well ( 511 ) having its source connected to Vdd and the first n-well, and its...
7145187 Substrate independent multiple input bi-directional ESD protection structure  
In a multiple input ESD protection structure, the inputs are isolated from the substrate by highly doped regions of opposite polarity to the input regions. Dual polarity is achieved by providing a...
7141831 Snapback clamp having low triggering voltage for ESD protection  
An SCR device having a first P type region disposed in a semiconductor body and electrically connected to anode terminal of the device. At least one N type region is also disposed in the body...
7138701 Electrostatic discharge protection networks for triple well semiconductor devices  
An electrostatic discharge protection network that uses triple well semiconductor devices either singularly or in a series configuration. The semiconductor devices are preferably in diode junction...
7138987 Protection circuit for input and output of liquid crystal display  
There is provided an input-output (I/O) protective circuit having more stable I/O protective function for use in the liquid crystal display device. An IO protective circuit includes: a resistance ...
7135743 Electrostatic discharge protection device with complementary dual drain implant  
Off-chip driver (OCD) NMOS transistors with ESD protection are formed by interposing an P-ESD implant between the N+ drain regions of OCD NMOS transistors and the N-well such that the P-ESD...
7132697 Nanomaterials for quantum tunneling varistors  
So-called quantum tunneling varistors are made with a matrix of particles having a nonconductive coating that is deposited on core conductive particles using atomic layer deposition methods. The...
7129589 Use of an internal on-chip inductor for electrostatic discharge protection of circuits which use bond wire inductance as their load  
A circuit includes a plurality of circuit components formed on a semi conductive substrate die and a bond wire. The plurality of circuit components include at least one active component that...
7129144 Overvoltage protection device and manufacturing process for the same  
An overvoltage protection device has a voltage-limiting region parallel to its central junction to produce a transverse junction breakdown. The spacing between the voltage-limiting region and the...
7129545 Charge modulation network for multiple power domains for silicon-on-insulator technology  
An SOI integrated circuit includes ESD protection on an SOI chip. A first power domain and a second power domain are provided in the SOI chip. In one embodiment, a charge modulation network in the...
7126204 Integrated semiconductor circuit with an electrically programmable switching element  
The invention relates to a semiconductor circuit ( 20 ) having an electrically programmable switching element ( 10 ), an “antifuse”, which includes a substrate electrode ( 2 ), produced in a...
7119405 Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies  
An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is...
7115952 System and method for ESD protection  
An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programable attenuation...
7115951 Low triggering voltage ESD protection structure and method for reducing the triggering voltage  
In a triggering ESD protection structure, the triggering voltage is reduced by introducing one or more corners or spikes into the p-n breakdown junction. This may be done by providing a polygate...
7112853 System for ESD protection with extra headroom in relatively low supply voltage integrated circuits  
An ESD protection system providing extra headroom at an integrated circuit (IC) terminal pad. The system includes an ESD protection circuit having one or more first diodes coupled in series between...
7110229 ESD protection circuit and display panel using the same  
An ESD protection circuit for low temperature poly-silicon thin film transistor panel and a display panel using the same. The feature of the ESD protection circuit comprises an ESD detection...
7109533 Electrostatic discharge protection device  
There is provided an electrostatic discharge protection device comprising a P conductive type first P well region 101 formed in a P type epitaxial layer 31 being deposited on a surface of a P+...
7105860 Flip chip light-emitting diode package  
A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky...
7102196 Multi-layered printed circuit board for efficient electrostatic discharge protection  
Disclosed is a multi-layered PCB of mobile communication terminals that may improve ESD protection of LCD through efficiently protecting LCD signal lines such as data lines and control lines from...
7102195 Transistor structure for electrostatic discharge protection circuit  
An electrostatic discharge (ESD) protection device includes a semiconductor layer, a source region formed in the layer, a drain region formed in the layer, a channel region in the layer between the...
7098509 High energy ESD structure and method  
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled...
7098488 Insulated gate bipolar transistor  
An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off...
7098510 Multifinger-type electrostatic discharge protection element  
A multifinger ESD protection element has between an input wiring to which a surge current is input and a reference-potential wiring, 2n-number (where n is a natural number of 2 or greater) of...
7098512 Layout patterns for deep well region to facilitate routing body-bias voltage  
Layout patterns for the deep well region to facilitate routing the body-bias voltage in a semiconductor device are provided and described. The layout patterns include a diagonal sub-surface mesh...
7098522 High voltage device with ESD protection  
A high voltage device. A high voltage MOS transistor is applied in the ESD protection device to the structure of which a doped region is added, generating a parasitic semiconductor controlled...
7091098 Semiconductor device with spacer having batch and non-batch layers  
A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at...
7091554 Semiconductor device  
A semiconductor device with high turn off capability includes a plurality of stripe trench lines which are provided in each of adjacent cell regions of a semiconductor layer in parallel and...
7091588 Semiconductor device including primary and secondary side circuits on first and second substrates with capacitive insulation  
A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically...
7087968 Electrostatic discharge protection circuit and semiconductor circuit therewith  
An ESD protection circuit is adapted for an integrated circuit with a first power source and a second power source. The ESD protection circuit comprises a first silicon controlled rectifier (SCR),...
7081659 Semiconductor apparatus having a built-in electric coil and a method of making the semiconductor apparatus  
A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips...
7081654 Method and system for a programmable electrostatic discharge (ESD) protection circuit  
An electrostatic discharge (ESD) protection device is disclosed. The ESD protection device comprises a source diffusion in a substrate and a deeper body diffusion in the substrate. The ESD...
7078772 Whole chip ESD protection  
This invention provides two circuit embodiments for a whole chip electrostatic discharge, ECD, protection scheme. It also includes a method for whole chip ESD protection. This invention relates to...
7075156 Collector structure for electrostatic discharge protection circuits  
Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first...
7074687 Method for forming an ESD protection device  
An ESD protection device ( 20 ) comprises an N-type epitaxial collector ( 21 ), a first, lightly doped, deep base region ( 221 ) and second, highly doped, shallow base region ( 222 ) that extends a...
7075154 Electrostatic discharge protection device  
An electrostatic discharge protection device formed on a substrate. The electrostatic discharge protection device includes a first isolation region formed over the substrate, an active region...
7075155 Structure for protecting a semiconductor circuit from electrostatic discharge and a method for forming the structure  
A structure for protecting a semiconductor circuit from electrostatic discharge is provided. The structure comprises a semiconductor substrate of a first conductivity type having two wells of a...
7075123 Semiconductor input protection circuit  
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D 1 is...
7071514 Electrostatic discharge protection device  
A compact ESD protection device is described that uses the reverse breakdown voltage of a base-emitter junction as a trigger diode to switch a transistor that shunts the forward bias ESD current to...
7071528 Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof  
A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third...
7067887 High voltage device and high voltage device for electrostatic discharge protection circuit  
A high voltage device for an electrostatic discharge protection circuit is provided. A silicon layer is disposed in a substrate. A first type well and a second type well are disposed in the silicon...
7067852 Electrostatic discharge (ESD) protection structure  
An ESD protection structure includes a semiconductor substrate of a first conductivity type, and first and second well regions of a second conductivity type disposed in the substrate. The first and...
7067884 Electrostatic discharge device  
M pieces of n-well regions nW are provided on a main surface of a p-type silicon substrate 3 , and p-well regions pW are provided among the n-well regions adjacent to one another. Moreover, each...
7067883 Lateral high-voltage junction device  
A lateral high-voltage junction device for over-voltage protection of an MOS circuit includes a substrate having a first junction region separated from a second junction region by a substrate...
7067878 Field effect transistor  
A MOS field effect transistor. A field relaxation layer of a gate overlap structure is disposed in contact with a drain region for the purpose of relaxation of the electric field by increasing a...
7064418 Method and structure of diode  
A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer...
7064392 Semiconductor device  
In an N-channel type field effect transistor constituting an input/output protection circuit, an N-type well 1 a with a lower dopant concentration than the source region 3 c is formed under the...
7061052 Input protection circuit connected to protection circuit power source potential line  
An input protection circuit capable of precisely bypassing a surge current to a power source terminal and protecting the gate of a protective transistor from an electrostatic surge. The input...
7061051 SCR-ESD structures with shallow trench isolation  
A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates an SCR device with all SCR elements...
Matches 201 - 250 out of 1122 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >