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6194764 |
Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge
An integrated semiconductor circuit has a protection structure for protecting against electrostatic discharge. The protection element has at least one integrated vertical protection transistor,...
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6191452 |
Thin film transistor having a stopper layer
On a transparent substrate to which a gate electrode is arranged, a silicon nitride film and a silicon oxide film to be gate insulating films are deposited, and further, a polycrystalline silicon...
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6191461 |
Semiconductor device including output circuit improved in electrostatic damage resistance
A first transistor having a central impurity region connected to a power supply node and outer-side impurity regions connected to an output node and a second transistor having a central impurity...
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6191455 |
Semi-conductor device protected by electrostatic protection device from electrostatic discharge damage
A semiconductor device has electrostatic protection device capable of preventing characteristic fluctuation of MOS transistor caused by electrostatic discharge. PN junction is formed in between N +...
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6191454 |
Protective resistance element for a semiconductor device
A semiconductor device includes a transistor and a protective resistance element. The transistor has first and second impurity regions of a first conductivity type formed on a surface of a...
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6191451 |
Semiconductor device with decoupling capacitance
A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an...
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6191456 |
Lateral IGBT in an SOI configuration and method for its fabrication
A lateral IGBT in an SOI configuration having a top side and an underside is proposed. The lateral IGBT has a drain zone extending to the top side and is of a first conductivity type. The underside...
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6188107 |
High performance transistor fabricated on a dielectric film and method of making same
The present invention is directed to a transistor formed above a layer of a dielectric material and a method of making same. In one illustrative embodiment, the method comprises forming a layer of...
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6188109 |
Semiconductor device having a sense electrode
A buried sense electrode (8) having the same structure as that of a buried gate electrode (7) is provided in an n - layer (3) of an IGBT with a sense oxide film (10) interposed therebetween. The...
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6184541 |
Thin film transistor and method of producing the same
On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are...
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6180993 |
Ion repulsion structure for fuse window
An ion repulsion structure for a fuse window is provided. The ion repulsion structure includes multi-level metallic layers and a P-type silicon semiconductor substrate having a plurality of wells....
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6180984 |
Integrated circuit impedance device and method of manufacture therefor
A multi-purpose device that can serve as either a resistor, MOSFET or JFET is disclosed. The resistor is formed by selecting a first metal interconnect configuration, the MOSFET is formed by...
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6177707 |
Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metalization is attached by means of an adhesive
A thin film semiconductor device includes a glass supporting body having thereon an insulating substrate which is attached thereto by a layer of adhesive material. On the surface of the substrate...
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6175139 |
Semiconductor device and method of making the same
A semiconductor device includes a metal terminal provided on a semiconductor substrate and a protection element. The protection element includes an insulated gate field-effect transistor. The...
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6172383 |
Power MOSFET having voltage-clamped gate
A MOSFET contains a voltage clamp including one or more diodes which connects its gate and source. The voltage clamp is designed to break down at a predetermined voltage and thereby protect the...
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6172403 |
Electrostatic discharge protection circuit triggered by floating-base transistor
An electrostatic discharge protection circuit triggered by a transistor having a floating base is disclosed. The electrostatic discharge protection circuit in accordance with the present invention...
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6169310 |
Electrostatic discharge protection device
An ESD protection device for use with an integrated circuit that provides a low impedance resistive path between IC pads (including V dd and V ss pads) when power to the IC is off, while assuring...
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6166415 |
Semiconductor device with improved noise resistivity
A dummy pattern that is inserted to stabilize the form of a transistor active region is implanted with an impurity of the same conductivity type as a well, and the impurity-doped region of the...
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6164781 |
High temperature transistor with reduced risk of electromigration and differently shaped electrodes
Electromigration in the source and drain conductors of a semiconductor device is reduced by increasing the cross-sectional areas of these conductors in accordance with an increase in a magnitude of...
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6166397 |
Display device with inverted type transistors in the peripheral and pixel portions
A display device having high definition and high reliability, and technology for manufacturing the same. In an active matrix type display device of integrated peripheral driving circuit type, pixel...
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6163056 |
Semiconductor device having electrostatic discharge
A semiconductor device includes a semiconductor substrate having a major surface, a source region of a second conductivity type, a drain region of the second conductivity type, and a first...
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6157065 |
Electrostatic discharge protective circuit under conductive pad
An electrostatic discharge protective circuit under an input pad. The electrostatic discharge protective circuit has at least a MOS, wherein the MOS comprises a drain region, a gate structure and a...
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6157070 |
Protection circuit against latch-up in a multiple-supply integrated circuit
In a multiple-supply CMOS IC, if VDDH is applied slower than VDDL during powering up, some diffusion junctions normally reversed-biased may momentarily become forward-biased and produce latch-up to...
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6153913 |
Electrostatic discharge protection circuit
The invention provides an ESD protection circuit, which is formed on a semiconductor substrate. There is at least one MOS transistor branches out at a place between an I/O port and an internal...
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6153909 |
Semiconductor device and method for fabricating the same
Semiconductor device and a method for fabricating the same, which is suitable for reducing a hot carrier effect, the device including a first conduction type substrate, a gate insulting film formed...
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6146951 |
Method of manufacturing semiconductor device for preventing electrostatic discharge
A method of manufacturing a semiconductor device for preventing ESD damage is disclosed. A semiconductor device for preventing against ESD damage according to a first embodiment of the present...
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6147369 |
SCR and current divider structure of electrostatic discharge protective circuit
An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current...
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6146913 |
Method for making enhanced performance field effect devices
This invention is predicated on applicant's discovery that near the gate dielectric/semiconductor interface, surface roughness of a particular spectral range plays a disproportionately larger role...
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6144074 |
Semiconductor memory device having stack-type memory cells and a method for manufacturing the same
At least one dummy storage node is formed for a plurality of storage nodes provided in stack type memory cells in which a plate electrode is grounded through the at least one dummy storage node,...
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6145107 |
Method for early failure recognition in power semiconductor modules
A method for early failure recognition in power semiconductor modules which employs a measurement across a resistor between a bonded emitter terminal and a bonded auxiliary emitter terminal that...
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6140682 |
Self protected stacked NMOS with non-silicided region to protect mixed-voltage I/O pad from ESD damage
A self-protected output driver for an integrated circuit utilizing cascode configured MOSFET transistors is formed in a single active region, allowing a smaller layout area without sacrificing...
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6133602 |
Method of reducing dielectric damage due to charging in the fabrication of stacked gate structures
A method of fabricating structures to reduce dielectric damage due to charging is easily incorporated into existing stacked gate fabrication processes. The conductive layers are patterned to form...
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6130460 |
Interconnect track connecting, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit, and process for producing such a track
An interconnect track connects, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit. The interconnect track comprises a first track...
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6124615 |
Stacked semiconductor structure for high integration of an integrated circuit with junction devices
A stacked semiconductor structure is designed for component arrangement of an IC (integrated circuit) device having a large number of various types of junction devices, such as diodes, well...
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6121090 |
Self-aligned silicided MOS devices with an extended S/D junction and an ESD protection circuit
A method for fabricating simultaneously a self-aligned silicided and an ESD protective transistor is disclosed. To improve operation speed, the MOS transistor is manufactured with an extended S/D...
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6118157 |
High voltage split gate CMOS transistors built in standard 2-poly core CMOS
A split-gate MOS transistor includes two separate but partially overlapping gates to reduce the electric field near the drain-channel interface region and, thereby, has an increased gated-diode...
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6114731 |
Low capacitance ESD structure having a source inside a well and the bottom portion of the drain inside a substrate
Disclosed is an electrostatic discharge protection transistor having low input capacitance and method for making the same. The electrostatic discharge protection transistor includes a semiconductor...
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6108181 |
Electrostatic discharge (ESD) circuit
An electrostatic discharge (ESD) discharge circuit provides robust protection to an integrated circuit (13). In one embodiment, a resistive element (71) ensures that current shunting bipolar...
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6107664 |
Self-locking static micro-circuit breaker
A static self-locking micro-circuit-breaker includes a first MOS depletion transistor of a first type connected by its drain to a first main terminal and by its gate to a second main terminal, a...
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6104065 |
Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure
A semiconductor device and a method for fabricating the same, wherein a thick side wall oxide film or polysilicon film is formed on the edge portion of the second silicon substrate. At the side...
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6104048 |
Electrostatic discharge protection for magneto-resistive heads
An electrostatic protection network is disclosed that may be employed in a disk drive having a magneto-resistive read element. The network comprises a ground; and an array that block a signal...
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6097066 |
Electro-static discharge protection structure for semiconductor devices
The structure includes a plurality of first ring shape structure formed on a semiconductor wafer to act as the gates of the MOS devices. The areas in the inner side of the first ring shape...
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6091113 |
Semiconductor device with evaluation MISFET
A depletion type MISFET is formed on a surface of the semiconductor substrate, MISFET including a source region, a drain region, a channel region between the source and drain regions, a gate...
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6084272 |
Electrostatic discharge protective circuit for semiconductor device
An electrostatic discharge protective circuit including a semiconductor substrate, an input/output pad formed on the semiconductor substrate, a PMOS transistor formed on the semiconductor substrate...
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6081013 |
Semiconductor device having a reduced distance between the input resistor and the internal circuit
In a semiconductor device including a semiconductor substrate, first and second external terminals, a first impurity diffusion region connected to the first external terminal, and second and third...
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6078068 |
Electrostatic discharge protection bus/die edge seal
Disclosed is an integrated circuit chip having an improved ESD protection structure. The integrated circuit chip includes a core logic region having a plurality of transistor devices that are...
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6078096 |
Semiconductor integrated circuit device having a short circuit preventing circuit
A 16 Mbit DRAM of the invention is made up of a nexus of four 4 Mbit DRAM chips which are formed adjacent to one another on the wafer and each constitute an individual 4 Mbit DRAM, the connection...
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6078085 |
Semiconductor integrated circuit and layout apparatus in which guard-ring is interposed between input-output circuits
A semiconductor integrated circuit is made up of a plurality of input-output circuit portions which are aligned at irregular intervals between a core portion and an external portion, a first...
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6075276 |
ESD protection device using Zener diodes
A semiconductor device is provided which includes a first conductivity type semiconductor substrate, a second conductivity type Zener region formed in a surface layer of the first conductivity type...
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6075271 |
Semiconductor device inhibiting parasitic effects during electrostatic discharge
A semiconductor device (10) having a stacked-gate buffer (30) wherein the stacked-gate buffer (30) has a substrate (65) and a top substrate region (70) both with the same first conductivity type....
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