Patents in Class 257/352

Matches 1 - 50 out of 276

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Match	Document	Document Title
1	7633131	MEMS semiconductor sensor device A semiconductor sensor device is formed using MEMS technology by placing a thin layer of single-crystal silicon, which includes semiconductor devices, over a cavity, which has been formed in a...
2	7622772	Electronic apparatuses, silicon-on-insulator integrated circuits, and fabrication methods An electronic apparatus includes an insulative substrate containing an aluminum-based glass and a layer containing a semiconductive material over the substrate. The insulative substrate can include...
3	7619282	Hybrid circuit and electronic device using same There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is...
4	7608892	Semiconductor device and manufacturing method of the same To reduce the adverse affect that characteristics of end portions of a channel forming region of a semiconductor film have on characteristics of a transistor. A gate electrode is formed over a...
5	7608893	Multi-channel transistor structure and method of making thereof A method of forming an electronic device includes, forming a first channel coupled to a first current electrode and a second current electrode and forming a second channel coupled to the first...
6	7598520	Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred...
7	7592671	Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial...
8	7576394	Thin film transistor including low resistance conductive thin films and manufacturing method thereof A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair...
9	7573063	Organic thin film transistors A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric...
10	7564100	Silicon on sapphire wafer The present invention provides an SOS wafer comprising a non-transparent polysilicon layer provided on a back surface of a sapphire substrate, a silicon nitride layer which protects the polysilicon...
11	7544981	Active matrix type semicondcutor display device There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present...
12	7544552	Method for manufacturing junction semiconductor device A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second...
13	7528448	Thin film transistor comprising novel conductor and dielectric compositions The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
14	7525157	Semiconductor device and manufacturing method thereof A semiconductor device includes: an insulating layer selectively formed on the semiconductor base material; a first semiconductor layer made of single-crystal and formed on the semiconductor base...
15	7524710	Radiation-hardened silicon-on-insulator CMOS device, and method of making the same A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type...
16	7521760	Integrated circuit chip with FETs having mixed body thickness and method of manufacture thereof An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with...
17	7514745	Semiconductor device A semiconductor device which has a substrate formed as a rigid body, includes stress relaxation layers formed by filling in concave portions defined in a first main surface of the substrate, and a...
18	7492009	Semiconductor device having silicon on insulator structure and method of fabricating the same A semiconductor device capable of making an effective use of a support substrate as interconnect is proposed. The semiconductor device (chip 4 ) of the present invention has a first Si substrate ...
19	7482663	Semiconductor circuit arrangement A semiconductor circuit arrangement includes at least one first and a second field effect transistor, where the field effect respectively have at least two active regions with, respectively, a...
20	7449734	Junction semiconductor device and method for manufacturing the same A junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a...
21	7436027	Semiconductor device and fabrication method for the same In a semiconductor device including a monocrystalline thin film transistor 16 a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2 ,...
22	7423324	Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the same In a double-gate MOS transistor, a substrate, an insulating layer, and a semiconductor layer are formed or laminated in that order, an opening extending to the insulating layer is formed in the...
23	7417286	Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same are provided. The semiconductor integrated circuit devices include an...
24	7400030	Schottky diode with silver layer contacting the ZnO and Mg_xZn_1−xO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and Mg x Zn 1-x O epitaxial films. The ZnO and Mg x Zn 1-x O films are...
25	RE40339	Silicon-on-insulator chip having an isolation barrier for reliability An SOI chip having an isolation barrier. The SOI chip includes a substrate, an oxide layer deposited on the substrate, and a silicon layer deposited on the oxide layer. A gate is deposited above...
26	7355247	Silicon on diamond-like carbon devices Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may include diamond-like carbon. A device, such a tri-gate transistor may be formed on...
27	7348226	Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide...
28	7335950	Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type...
29	7274036	Gate shorted to body thin film transistor, manufacturing method thereof, and display including the same A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer...
30	7259428	Semiconductor device using SOI structure having a triple-well region A semiconductor device includes a support substrate, a buried insulation film, provided on the support substrate, having a thickness of 5 to 10 nm, a silicon layer provided on the buried insulation...
31	7247908	Method of fabricating a FinFET A FinFET structure and method of forming a FinFET device. The method includes: (a) providing a semiconductor substrate, (b) forming a dielectric layer on a top surface of the substrate; (c) forming...
32	7244990	Semiconductor device On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are...
33	7221032	Semiconductor device including FinFET having vertical double gate structure and method of fabricating the same A semiconductor device includes a semiconductor layer formed on a semiconductor substrate via an insulating film and having a projecting shape, a gate electrode formed, via a gate insulating film,...
34	7214570	Encapsulating a device An encapsulation for an electrical device is disclosed. A cap support is provided in the non-active regions of the device to prevent the package from contacting the active components of the device...
35	7208803	Method of forming a raised source/drain and a semiconductor device employing the same A method of forming a raised source/drain proximate a spacer of a gate of a transistor on a substrate, and a semiconductor device of an integrated circuit employing the same. In one embodiment, the...
36	7180138	SOI structure having a SiGe layer interposed between the silicon and the insulator A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to...
37	7180109	Field effect transistor and method of fabrication The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed...
38	7176527	Semiconductor device and method of fabricating same A semiconductor device and a method of fabricating the same suppress a substrate floating effect without causing lowering of a degree of integration. The semiconductor device has a...
39	7176525	Process for production of SOI substrate and process for production of semiconductor device A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a...
40	7166894	Schottky power diode with SiCOI substrate and process for making such diode The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide ( 16 ) insulated from a solid carrier ( 12 ) by a buried layer of...
41	7154148	Hybrid circuit and electronic device using same There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is...
42	7148543	Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate...
43	7141855	Dual-thickness active device layer SOI chip structure A dual-thickness active device layer SOI chip structure is provided. The SOI chip structure has an active device layer, at least one oxide region located at a predetermined position of the active...
44	7122865	SOI wafer and process for producing it An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from...
45	7115948	Transistor constructions and electronic devices The invention includes a non-volatile memory cell comprising a field effect transistor construction having a body region within a crystalline material. The body region includes a charge trapping...
46	7087962	Method for forming a MOS transistor having lightly dopped drain regions and structure thereof A MOS transistor having a LDD structure is described. In accordance with the present invention a MOS transistor includes a low impurity concentration region formed in a semiconductor film between...
47	7087965	Strained silicon CMOS on hybrid crystal orientations Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a...
48	7064387	Silicon-on-insulator (SOI) substrate and method for manufacturing the same A silicon-on-insulator (SOI) substrate includes a silicon substrate including an active region defined by a field region that surrounds the active region for device isolation. The field region...
49	7042052	Transistor constructions and electronic devices The invention includes a non-volatile memory cell comprising a field effect transistor construction having a body region within a crystalline material. The body region includes a charge trapping...
50	6965149	Epitaxial semiconductor wafer and a manufacturing method thereof An epitaxial semiconductor wafer having a wafer substrate made of semiconductor single crystal, an epitaxial layer deposited on a top surface of said wafer substrate and a polysilicon layer...

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