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7629668 |
Composite semiconductor device
The electrode of a thin-type capacitor is connected to the rear surface of a p-type semiconductor substrate which is brought to a ground potential, by a conductive DAF (Die Attach Film) or by a...
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7626200 |
Process for fabricating a thin film semiconductor device, thin film semiconductor device, and liquid crystal display
A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to...
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7619282 |
Hybrid circuit and electronic device using same
There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is...
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7615825 |
Semiconductor device having tapered gate insulating film
TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower...
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7615824 |
D/A converter circuit, semiconductor device incorporating the D/A converter circuit, and manufacturing method of them
D/A conversion having higher accuracy is provided by improving relative accuracy of the resistance value of resistors which configure a resistor string. A manufacturing method of a D/A converter...
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7615823 |
SOI substrate and method of manufacturing the same
The SOI substrate includes a supporting substrate, an insulating layer (first insulating layer), another insulating layer (second insulating layer), and a silicon layer (silicon active layer). On a...
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7611957 |
Method of manufacturing semiconductor device
The invention provides a method of manufacturing a semiconductor device having a semiconductor resistor layer, which reduces a difference between a theoretical resistance value and a measured...
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7611934 |
Semiconductor device and method of fabricating the same
A semiconductor device includes (a) a semiconductor layer formed on an electrically insulating layer, (b) a gate insulating film formed on the semiconductor layer, (c) a gate electrode formed on...
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7602042 |
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed...
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7592671 |
Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer
A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial...
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7585546 |
Surface passivation and sealing of micro-optics devices for improved performance in harsh environments
Methods and structures for reducing and/or eliminating moisture penetration in an optical package. The optical package may include (1) a layer of inorganic material placed over the points of the...
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7586478 |
Semiconductor device
There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output...
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7586121 |
Electroluminescence device having stacked capacitors
An electroluminescence (EL) device includes a substrate and a plurality of pixels formed on the substrate. Each pixel includes a first area including at least a first capacitor and a second...
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7576360 |
Electro-optical device which comprises thin film transistors and method for manufacturing the same
An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer...
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7569885 |
Electro-optical device and electronic apparatus
An electro-optical device includes pixel regions arranged at intersections of a plurality of data lines and a plurality of scanning lines on an element substrate. A sensor element, a sensor signal...
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7564059 |
Semiconductor device with tapered gates
In order to realize a higher reliability TFT and a high reliability semiconductor device, an NTFT of the present invention has a channel forming region, n-type first, second, and third impurity...
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7560759 |
Semiconductor device and method of manufacturing the same
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process....
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7557411 |
Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same
Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for...
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7550795 |
SOI devices and methods for fabricating the same
Silicon on insulator (SOI) devices and methods for fabricating the same are provided. An exemplary embodiment of a SOI device comprises a substrate. A first insulating layer is formed over the...
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7550771 |
Thin film transistor, manufacturing method thereof, and active matrix display apparatus
A thin film transistor includes a metal substrate, a first conductive barrier layer placed on the metal substrate to prevent diffusion of substance of the metal substrate, a protective insulating...
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7547917 |
Inverted multilayer semiconductor device assembly
An apparatus and method for an inverted multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device...
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7545008 |
Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers...
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7541618 |
Liquid crystal device having a thin film transistor
To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a...
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7538390 |
Semiconductor device with PMOS and NMOS transistors
A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS...
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7535060 |
Charge storage structure formation in transistor with vertical channel region
A semiconductor device includes a semiconductor structure having a first sidewall. A vertical channel region is formed in the semiconductor structure along the first sidewall between a first...
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7531878 |
Semiconductor MIS transistor formed on SOI semiconductor substrate
There is provided a semiconductor device which is formed on a semiconductor substrate and allows effective use of the feature of the semiconductor substrate, and there is also provided a method of...
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7525119 |
Light emitting display device using thin film transistors and electro-luminescence element
There is provided an electric device which can prevent a deterioration in a frequency characteristic due to a large electric power external switch connected to an opposite electrode and can prevent...
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7525135 |
Semiconductor device and display device
On a poly-silicon layer formed on a glass substrate, a gate electrode is formed via a gate insulation film. After forming an impurity-doped region in the poly-silicon layer using the gate electrode...
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7525121 |
Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same
In a first aspect, a first method is provided for semiconductor device manufacturing. The first method includes the steps of (1) providing a substrate; and (2) forming a first silicon-on-insulator...
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7521761 |
Variable layout structure for producing CMOS circuit
A layout structure for a CMOS circuit comprises a transistor layer forming P-type transistors 11 and 21 and N-type transistors 12 and 22, and a resistor layer which includes a resistor 13 ...
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7521713 |
Semiconductor device having electrostatic discharge element
A semiconductor device includes a laminated substrate; a removal portion; a cavity; a first semiconductor element; and a second semiconductor element. In the laminated substrate, a bulk layer, an...
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7521760 |
Integrated circuit chip with FETs having mixed body thickness and method of manufacture thereof
An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with...
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7517742 |
Area diode formation in SOI application
A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor stack is provided which includes a semiconductor substrate, a first semiconductor...
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7514761 |
Triple operation voltage device
A triple operation voltage device including a first type substrate, a high voltage (HV) first type well, a second type well, a low voltage (LV) device well, and a middle voltage (MV) device well is...
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7501685 |
Display device comprising pixel portion
To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a...
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7498637 |
Semiconductor memory
A SRAM memory is composed of FD-SOI transistors, and performance of the memory cell is improved by controlling an electric potential of a layer under a buried oxide film of a SOI transistor...
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7495287 |
Semiconductor device and manufacturing method thereof
A semiconductor device includes a semiconductor layer formed by epitaxial growth in a first region which is obtained by etching a semiconductor substrate to a predetermined depth, a surface of the...
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7492009 |
Semiconductor device having silicon on insulator structure and method of fabricating the same
A semiconductor device capable of making an effective use of a support substrate as interconnect is proposed. The semiconductor device (chip 4 ) of the present invention has a first Si substrate ...
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7489008 |
High Ion/Ioff SOI MOSFET using body voltage control
A semiconductor device may comprise a partially-depleted SOI MOSFET having a floating body region disposed between a source and drain. The floating body region may be driven to receive injected...
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7482628 |
Array substrate for liquid crystal display device and method of fabricating the same
An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor...
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7482657 |
Balanced cells with fabrication mismatches that produce a unique number generator
A static random access memory (SRAM) is laid out to be balanced so that, when power is applied to the SRAM, the cells of the SRAM have no preferred logic state. In addition, the SRAM is fabricated...
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7482653 |
Non-volatile memory with carbon nanotubes
Floating-gate memory cells having carbon nanotubes interposed between the substrate and the tunnel dielectric layer facilitate ballistic injection of charge into the floating gate. The carbon...
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7482671 |
MOS semiconductor device isolated by a device isolation film
A MOS semiconductor device isolated by a trench device isolation region includes a p-channel MOS field effect transistor having a source/drain region with a length in the channel direction that is...
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7482623 |
Organic semiconductor film and organic semiconductor device
An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
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7482663 |
Semiconductor circuit arrangement
A semiconductor circuit arrangement includes at least one first and a second field effect transistor, where the field effect respectively have at least two active regions with, respectively, a...
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7476941 |
Semiconductor integrated circuit device and fabrication process thereof
A semiconductor integrated circuit includes an n-channel MOS transistor and a p-channel MOS transistor formed respectively in first and second device regions of a substrate, the n-channel MOS...
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7473985 |
Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates
A semiconductor structure with an insulating layer on a silicon substrate, a plurality of electrically-isolated silicon-on-insulator (SOI) regions separated from the substrate by the insulating...
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7470951 |
Hybrid-FET and its application as SRAM
A semiconductor device ( 51 ) is provided herein. The semiconductor device comprises (a) a substrate ( 57 ), a semiconductor layer ( 53 ) disposed on said substrate and comprising a horizontal...
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7462896 |
Semiconductor memory device and manufacturing method for semiconductor memory device
The object is simplification of a manufacturing process for nonvolatile memory by reducing additional processes for forming a charge storage structure, and downsizing of nonvolatile memory. The...
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7459753 |
Electro-optical device, method for manufacturing electro-optical device, and electronic apparatus
An electro-optical device includes a substrate having a display region; TFTs each including a first electrode in the display region, a first insulating layer on the first electrode, a second...
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