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Match Document Document Title
7619283 Methods of fabricating glass-based substrates and apparatus employing same  
Methods and apparatus provide for a glass or glass ceramic substrate, including: a bulk layer; an enhanced positive ion concentration layer; and a reduced positive ion concentration layer, wherein...
7619282 Hybrid circuit and electronic device using same  
There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is...
7619250 Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate  
A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO 2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an...
7618865 Method in the fabrication of a monolithically integrated vertical device on an SOI substrate  
A method in the fabrication of a monolithically integrated vertical device on an SOI substrate comprises the steps of providing an SOI substrate including, from bottom to top, a silicon bulk...
7615823 SOI substrate and method of manufacturing the same  
The SOI substrate includes a supporting substrate, an insulating layer (first insulating layer), another insulating layer (second insulating layer), and a silicon layer (silicon active layer). On a...
7615803 Method for manufacturing transistor and image display device using the same  
A method for manufacturing a transistor includes forming a semiconductor layer on a substrate, a first insulation film on the semiconductor layer, and a gate electrode on the first insulation film....
7615471 Method for producing a tensioned layer on a substrate, and a layer structure  
The invention relates to a method for producing a tensioned layer on a substrate involving the following steps: producing a defect area in a layer adjacent to the layer to be tensioned, and;...
7615426 PMOS transistor with discontinuous CESL and method of fabrication  
A transistor having a discontinuous contact etch stop layer comprising: a substrate having a surface, a gate dielectric on said surface of said substrate, a gate electrode on said gate dielectric,...
7615411 Semiconductor package including connected upper and lower interconnections, and manufacturing method thereof  
A semiconductor package includes a base plate, at least one semiconductor constructing body which is formed on one surface of the base plate and has a plurality of external connection electrodes...
7612416 Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same  
A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the...
7612411 Dual-gate device and method  
A memory circuit having dual-gate memory cells and a method for fabricating such a memory circuit are disclosed. The dual-gate memory cells each include a memory device and an access device sharing...
7612409 Organic thin film transistor comprising device insulation film and method of manufacturing the same  
An organic thin film transistor (OTFT) includes a substrate, a gate electrode formed on the transparent substrate, a gate insulation film formed on the gate electrode, a source electrode and a...
7611974 Multilayer structure and fabrication thereof  
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate...
7611934 Semiconductor device and method of fabricating the same  
A semiconductor device includes (a) a semiconductor layer formed on an electrically insulating layer, (b) a gate insulating film formed on the semiconductor layer, (c) a gate electrode formed on...
7608927 Localized biasing for silicon on insulator structures  
A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing...
7608893 Multi-channel transistor structure and method of making thereof  
A method of forming an electronic device includes, forming a first channel coupled to a first current electrode and a second current electrode and forming a second channel coupled to the first...
7608892 Semiconductor device and manufacturing method of the same  
To reduce the adverse affect that characteristics of end portions of a channel forming region of a semiconductor film have on characteristics of a transistor. A gate electrode is formed over a...
7608891 Thin film transistor, circuit apparatus and liquid crystal display  
A thin film transistor includes a one conductive type semiconductor layer ( 11 ); a source region ( 12 ) and a drain region ( 13 ) which are separately provided in the semiconductor layer; and a...
7608890 Semiconductor device and method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the...
7608868 Semiconductor device and method for manufacturing the same  
The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried...
7605429 Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement  
The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing...
7605396 Field effect type organic transistor and process for production t hereof  
A field effect type organic transistor is provided which comprises a source electrode, a drain electrode, and a gate electrode, a gate insulating layer, and an organic semiconductor layer, wherein...
7605053 Glass-based SOI structures  
Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor...
7602021 Method and structure for strained FinFET devices  
A method (and structure) of forming an electronic device includes forming at least one localized stressor region within the device.
7602020 Semiconductor device and method for forming the same  
A thin film transistor device reduced substantially—in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate...
7602001 Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells  
This invention includes a capacitorless one transistor DRAM cell that includes a pair of spaced source/drain regions received within semiconductive material. An electrically floating body region is...
7598584 Infrared solid-state image pickup apparatus and a production method thereof  
An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN...
7598570 Semiconductor device, SRAM and manufacturing method of semiconductor device  
A semiconductor device according to the present invention is provided with an SOI substrate, an active region, a first insulating film (complete separation insulating film), a second insulating...
7598550 MOS transistor and manufacturing method thereof  
There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer,...
7598516 Self-aligned process for nanotube/nanowire FETs  
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based...
7595533 Thin film semiconductor device and manufacturing method  
When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is...
7595532 Semiconductor memory devices and methods of forming the same  
A semiconductor memory device includes a semiconductor substrate including an insulating layer, a charge storage region of a first conductivity type on the insulating layer, and an insulating film...
7595499 Method and system for fabricating strained layers for the manufacture of integrated circuits  
A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having...
7592672 Grounding structure of semiconductor device including a conductive paste  
A circuit substrate of a grounding structure of a semiconductor device according to the invention has a plurality of connection pads and a grounding wiring. The semiconductor device has a...
7592671 Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer  
A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial...
7592670 Semiconductor device  
A semiconductor device includes a P-channel metal-oxide semiconductor (PMOS) transistor and an N-channel metal-oxide semiconductor (NMOS) transistor formed in three or more fin active regions in a...
7592646 Semiconductor device with a SiGe layer having uniaxial lattice strain  
A semiconductor device includes a MIS transistor. The device includes a buried insulating film formed in one part of a substrate, the buried insulating film being elongated in a gate-width...
7592239 Flexible single-crystal film and method of manufacturing the same  
The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a...
7592209 Integration of a floating body memory on SOI with logic transistors on bulk substrate  
A method and the resultant memory is described for forming an array of floating body memory cells and logic transistors on an SOI substrate. The floating bodies for the cells are formed over the...
7589387 SONOS type two-bit FinFET flash memory cell  
A 2-bit FinFET flash memory cell capable of storing 2 bits and a method of forming the same are provided. The memory cell includes a semiconductor fin on a top surface of a substrate, a gate...
7589382 Semiconductor device and method for manufacturing the same  
In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the...
7589381 Field effect transistor and manufacturing method thereof  
A field effect transistor includes a first semiconductor region forming a channel region, a gate electrode insulatively disposed above the first semiconductor region, source and drain electrodes...
7589380 Method for forming integrated circuit utilizing dual semiconductors  
A monolithically integrated electronic circuit using two different semiconductor layers which are separated by a dielectric layer. Transistors formed in the upper semiconductor layer are connected...
7589379 Power semiconductor and method of fabrication  
This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their...
7588994 Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain  
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
7588981 Semiconductor device and manufacturing method thereof  
In a thin film transistor, a metallic element promoting crystallization of an amorphous silicon film is effectively removed and the productivity is improved. By using a silicon film containing an...
7586154 Method for fabricating a substrate with useful layer on high resistivity support  
A substrate suitable for producing a high frequency electronic circuit. This substrate includes a support substrate having a controlled amount of interstitial oxygen and which is treated to...
7582934 Isolation spacer for thin SOI devices  
A semiconductor device comprises a semiconductor mesa overlying a dielectric layer, a gate stack formed overlying the semiconductor mesa, and an isolation spacer formed surrounding the...
7582933 Transistor with electrode-protecting insulating film  
A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer,...
7579654 Semiconductor on insulator structure made using radiation annealing  
Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI...
Matches 1 - 50 out of 1829 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >