Matches 401 - 450 out of 1855 < 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 >
Match Document Document Title
7265420 Semiconductor substrate layer configured for inducement of compressive or expansive force  
An integrated circuit (IC) utilizes a strained layer. The substrate can utilize trenches in a base layer to induce stress in a layer. The trenches define pillars on a back side of a bulk substrate...
7265419 Semiconductor memory device with cell transistors having electrically floating channel bodies to store data  
A semiconductor memory device includes: a semiconductor device base having an insulating substrate and a semiconductor layer overlying it; a cell array formed on the semiconductor device base with...
7265017 Method for manufacturing partial SOI substrates  
There is closed a semiconductor device which comprises a semiconductor substrate including an SOI region where a first insulating film is buried, and a non-SOI region, the semiconductor substrate...
7262464 Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate  
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further...
7262486 SOI substrate and method for manufacturing the same  
The SOI substrate 1 has a supporting substrate 10 , an insulating layer 20 formed on the supporting substrate 10 and a silicon layer 30 formed on the insulating layer 20 . A through...
7262462 Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same  
A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation...
7262466 Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures  
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has...
7262433 Semiconductor device  
A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin...
7262454 Thin film transistor substrate and fabricating method thereof  
A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin...
7262465 P-channel MOS transistor and fabrication process thereof  
A p-channel MOS transistor includes a strained SOI substrate formed of a SiGe mixed crystal layer and a strained Si layer formed on the SiGe mixed crystal layer via an insulation film, a channel...
7259428 Semiconductor device using SOI structure having a triple-well region  
A semiconductor device includes a support substrate, a buried insulation film, provided on the support substrate, having a thickness of 5 to 10 nm, a silicon layer provided on the buried insulation...
7256455 Double gate semiconductor device having a metal gate  
A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side...
7257015 Semiconductor memory device having a floating storage bulk region  
The disclosure concerns a semiconductor memory device including a plurality of transistors. Each of the transistors has a first data state having a first threshold voltage and a second data state...
7256459 Floating body-type DRAM cell with increased capacitance  
A semiconductor memory device includes transistors, each including a first-conductivity-type semiconductor layer formed on a semiconductor substrate via a first insulating film, a...
7256456 SOI substrate and semiconductor integrated circuit device  
A semiconductor IC device includes a base substrate comprising P − -type silicon, a first P + -type silicon layer is provided on the base substrate, and an N + -type silicon layer and a second P...
7256421 Display device having a structure for preventing the deterioration of a light emitting device  
A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements' (condenser) required by each pixel is provided. A first passivation film, a second...
7256458 Doubly asymmetric double gate transistor structure  
The present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention...
7253479 Semiconductor device with cavity and method of manufacture thereof  
A semiconductor device is provided with a substrate with a cavity inside, the substrate including a device formation area located above the cavity, a plurality of trenches formed in the substrate...
7250351 Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors  
Enhanced silicon-on-insulator transistors and methods are provided for implementing enhanced silicon-on-insulator transistors. The enhanced silicon-on-insulator (SOI) transistors include a thin...
7247569 Ultra-thin Si MOSFET device structure and method of manufacture  
The present invention comprises a method for forming an ultra-thin channel MOSFET and the ultra-thin channel MOSFET produced therefrom. Specifically, the method comprises providing an SOI substrate...
7247910 MOSFET formed on a silicon-on-insulator substrate having a SOI layer and method of manufacturing  
In a FET having a thin-film SOI layer, to prevent a parasitic resistance increase in source/drain regions. To realize an elevated layer to be formed on the source/drain region without using a...
7247908 Method of fabricating a FinFET  
A FinFET structure and method of forming a FinFET device. The method includes: (a) providing a semiconductor substrate, (b) forming a dielectric layer on a top surface of the substrate; (c) forming...
7245330 Electrooptic device, liquid crystal device, and projection display device with line defects  
To provide an electrooptic device which can reliably suppress a substrate floating effect, such as a parasitic bipolar phenomenon, in an SOI-MIS transistor, and which has superior electrical...
7245002 Semiconductor substrate having a stepped profile  
A semiconductor substrate which effectively prevents a chipping phenomenon, wherein the outer peripheral extremity of the insulation layer is located between the outer peripheral extremity of the...
7244990 Semiconductor device  
On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are...
7244991 Semiconductor integrated device  
A semiconductor integrated apparatus, including: an SOI (Silicon On Insulator) substrate which has a support substrate and an embedded insulation film; an NMOSFET, a PMOSFET and an FBC (Floating...
7242060 Semiconductor memory device including an SOI substrate  
A semiconductor memory device includes a plurality of N and P channel MOS transistors. The plurality of MOS transistors are formed on an SOI (Silicon On Insulator) substrate. Each MOS transistor...
7238989 Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancement  
A method of fabricating a CMOS device wherein mobility enhancement of both the NMOS and PMOS elements is realized via strain induced band structure modification, has been developed. The NMOS...
7238988 Semiconductor memory device  
A silicide film is provided in diffusion regions formed in a semiconductor layer. The silicide film has a thickness substantially same as that of the semiconductor layer. The silicide film has the...
7233044 MOS transistor and method for producing a MOS transistor structure  
A MOS transistor, and a method for producing the same, is provided with a source region, a gate-region, a drain region, and a drift region in an SOI wafer. The SOI-wafer has a carrier layer, which...
7233020 Design for an organic light-emitting display that eliminates deterioration of the emission layer due to outgassing from an underlying layer  
An organic light-emitting display has a first pattern overlapping with one first electrode portion which overlaps with the via-hole. The first pattern is protruded upward as compared with the first...
7230270 Self-aligned double gate device and method for forming same  
In a method of forming a double gate device, a buried insulating layer having a thickness of less than about 30 nm is formed on a first substrate. A second substrate is formed on the buried...
7229865 Methods of making semiconductor-on-insulator thin film transistor constructions  
The invention includes SOI thin film transistor constructions, memory devices, computer systems, and methods of forming various structures, devices and systems. The structures typically comprise a...
7226833 Semiconductor device structure and method therefor  
Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and...
7227175 Semiconductor device with different lattice properties  
To reduce a current loss through a channel and improve electron mobility, a first semiconductor layer and a second semiconductor layer (sequentially formed on a semiconductor substrate) have...
7227184 Active matrix organic electro luminescence display device and manufacturing method for the same  
An active matrix organic electro luminescent display (ELD) device comprises a substrate, first and second active layers formed of polycrystalline silicon on the substrate, first source and drain...
7227239 Resettable fuse device and method of fabricating the same  
A resettable fuse device is fabricated on one surface of a semiconductor substrate ( 10 ) and includes: a gate region ( 20 ) having first and second ends; a source node ( 81 ) formed in proximity...
7227205 Strained-silicon CMOS device and method  
The present invention provides a semiconductor device and a method of forming thereof, in which a uniaxial strain is produced in the device channel of the semiconductor device. The uniaxial strain...
7224032 Electronic device, display device and production method thereof  
A display device of the present invention comprises: a source line; a pixel electrode; a first TFT for switching an electrical connection between the source line and the pixel electrode; and a...
7224030 Method and apparatus for producing rectangular contact holes utilizing side lobe formation  
An array of small square contact holes, on the order of magnitude of the exposing light wavelength, are formed by selecting the partial coherence and numerical aperture of the exposing light source...
7223996 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors  
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a...
7224031 Semiconductor wafer and manufacturing method thereof  
The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral...
7224205 Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors  
An apparatus and method for manufacturing metal-oxide semiconductor (MOS) transistors that are operable at voltages below 1.5V, which MOS transistors are area efficient, and where the drive...
7221032 Semiconductor device including FinFET having vertical double gate structure and method of fabricating the same  
A semiconductor device includes a semiconductor layer formed on a semiconductor substrate via an insulating film and having a projecting shape, a gate electrode formed, via a gate insulating film,...
7221024 Transistor having dielectric stressor elements for applying in-plane shear stress  
A chip is provided which includes an active semiconductor region and a field effect transistor (“FET”) having a channel region, a source region and a drain region all disposed within the active...
7221006 GeSOI transistor with low junction current and low junction capacitance and method for making the same  
A semiconductor device ( 101 ) is provided herein which comprises a substrate ( 103 ) comprising germanium. The substrate has source ( 107 ) and drain ( 109 ) regions defined therein. A barrier...
7220680 Method for photolithography in semiconductor manufacturing  
The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive...
7221025 Semiconductor on insulator substrate and devices formed therefrom  
A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material having a perovskite lattice, such as a rare earth scandate. The dielectric material is selected to have an...
7220992 Thin film transistor array panel and a liquid crystal display including the same  
A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second signal lines intersecting, and...
7217636 Semiconductor-on-insulator silicon wafer  
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second semiconductor substrates. A first insulating layer is formed on the...
Matches 401 - 450 out of 1855 < 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 >