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9041104 Semiconductor device  
A memory includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. A first channel region of a first conductivity type is...
9029946 Power semiconductor device and method therefor  
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a...
8994107 Semiconductor devices and methods of forming the semiconductor devices including a retrograde well  
Semiconductor devices and methods of forming semiconductor devices are provided herein. In an embodiment, a semiconductor device includes a semiconductor substrate. A source region and a drain...
8928093 FinFET body contact and method of making same  
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The...
8921937 High voltage metal-oxide-semiconductor transistor device and method of fabricating the same  
The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first...
8906753 Semiconductor structure and method for manufacturing the same  
The present invention provides a method for manufacturing a semiconductor structure, which comprises: providing an SOI substrate, forming a gate structure on the SOI substrate; etching an SOI...
8884368 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Transistors having features which preclude straight-line lateral conductive paths from a channel region to a source/drain region
 
Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more...
8860136 Semiconductor device and method of manufacturing a semiconductor device  
A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift...
8809940 Fin held effect transistor  
A FinFET is described, the FinFET includes a substrate including a top surface and a first insulation region and a second insulation region over the substrate top surface comprising tapered top...
8803233 Junctionless transistor  
A transistor includes a semiconductor layer, and a gate dielectric is formed on the semiconductor layer. A gate conductor is formed on the gate dielectric and an active area is located in the...
8796748 Transistors, methods of manufacture thereof, and image sensor circuits  
Transistors, methods of manufacturing thereof, and image sensor circuits are disclosed. In one embodiment, a transistor includes a buried channel disposed in a workpiece, a gate dielectric...
8779527 FinFET drive strength modification  
A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the...
8759916 Field effect transistor and a method of forming the transistor  
Disclosed are embodiments of a metal oxide semiconductor field effect transistor (MOSFET) structure and a method of forming the structure. The structure incorporates source/drain regions and a...
8742505 Apparatus comprising a first transistor including a channel in a fin and a second transistor including a channel in a fin  
One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first...
8735980 Configuration and fabrication of semiconductor structure using empty and filled wells  
A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements,...
8716793 Lateral double diffused metal oxide semiconductor device and method for manufacturing the same  
Disclosed are an LDMOS device and a method for manufacturing the same capable of decreasing the concentration of a drift region between a source finger tip and a drain, thereby increasing a...
8686501 Semiconductor device with high voltage transistor  
A semiconductor device includes: a p-type active region; a gate electrode traversing the active region; an n-type LDD region having a first impurity concentration and formed from a drain side...
8680617 Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS  
Disclosed is an SOI device on a bulk silicon layer which has an FET region, a body contact region and an STI region. The FET region is made of an SOI layer and an overlying gate. The STI region...
8664719 High voltage device with reduced leakage  
A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a...
8614121 Method of manufacturing back gate triggered silicon controlled rectifiers  
Back gate triggered silicon controlled rectifiers (SCR) and methods of manufacture are disclosed. The method includes forming a first diffusion type and a second diffusion type in a semiconductor...
8614486 Low resistance source and drain extensions for ETSOI  
A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment,...
8610220 Semiconductor device with self-aligned interconnects  
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device...
8610207 Semiconductor architecture having field-effect transistors especially suitable for analog applications  
An insulated-gate field-effect transistor (220U) utilizes an empty-well region for achieving high performance. The concentration of the body dopant reaches a maximum at a subsurface location no...
8554279 Circuit for driving light-emitting element, and cellular phone  
A boosting circuit unit supplies a boosting voltage to one terminal of a backlight. A boosting comparator compares a voltage applied to the other terminal of the backlight with a predetermined...
8530975 Semiconductor device with gate edge protrusion  
A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a...
8525342 Dual-side interconnected CMOS for stacked integrated circuits  
A stacked integrated circuit (IC) may be manufactured with a second tier wafer bonded to a double-sided first tier wafer. The double-sided first tier wafer includes back-end-of-line (BEOL) layers...
8513734 Switch mode converter employing dual gate MOS transistor  
A disclosed power transistor, suitable for use in a switch mode converter that is operable with a switching frequency exceeding, for example, 5 MHz or more, includes a gate dielectric layer...
8492835 High voltage MOSFET device  
A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a...
8487367 Planar MOSFET with textured channel and gate  
A semiconductor device is disclosed that includes a semiconductor substrate having a channel region and respective source and drain regions formed on opposite sides of the channel region. The...
8471329 Tunnel FET and methods for forming the same  
A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is...
8431994 Thin-BOX metal backgate extremely thin SOI device  
Silicon-on-insulator (SOI) structures with silicon layers less than 20 nm thick are used to form extremely thin silicon-on-insulator (ETSOI) semiconductor devices. ETSOI devices are manufactured...
8415745 ESD protection device  
An ESD protection device is described, which includes a P-body region, a P-type doped region, an N-type doped region and an N-sinker region. The P-body region is configured in a substrate. The...
8395197 Semiconductor device and method of forming the same  
A semiconductor device includes a gate electrode on a gate insulating film over a semiconductor substrate, a first sidewall insulating film on a side surface of the gate electrode, and source and...
8390063 Semiconductor device having a lightly doped semiconductor gate and method for fabricating same  
According to one embodiment, a semiconductor device comprises a high-k gate dielectric overlying a well region having a first conductivity type formed in a semiconductor body, and a semiconductor...
8368142 Semiconductor device and method of manufacturing the same  
A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal...
8362558 Low on-resistance lateral double-diffused MOS device  
A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and...
8350327 High voltage device with reduced leakage  
A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a...
8344452 Metal gate transistors with raised source and drain regions formed on heavily doped substrate  
An MOS transistor formed on a heavily doped substrate is described. Metal gates are used in low temperature processing to prevent doping from the substrate from diffusing into the channel region...
8330231 Transistor having gate dielectric protection and structure  
A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate...
8298886 Electronic device including doped regions between channel and drain regions and a process of forming the same  
An electronic device can include a drain region of a transistor, wherein the drain region has a first conductivity type. The electronic device can also include a channel region of the transistor,...
8278686 Structure and method for forming planar gate field effect transistor with low resistance channel region  
A vertically-conducting planar-gate field effect transistor includes a silicon region of a first conductivity type, a silicon-germanium layer extending over the silicon region, a gate electrode...
8264029 Convex shaped thin-film transistor device  
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density, and a method of manufacturing such...
8253163 High voltage semiconductor device including a free wheel diode  
A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an n+ type emitter region in the p type base region, an n+ type cathode region...
8222649 Semiconductor device and method of manufacturing the same  
A semiconductor device and a method of manufacturing the same, to appropriately determine an impurity concentration distribution of a field relieving region and reduce an ON-resistance. The...
8183636 Static randon access memory cell  
One or more embodiments relate to a static random access memory cell comprising: a first inverter including a first n-channel pull-down transistor coupled between a first node and a ground...
8164111 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
High voltage semiconductor device including a free wheel diode
 
A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an n+ type emitter region in the p type base region, an n+ type cathode region...
8164086 Phase-controlled field effect transistor device and method for manufacturing thereof  
A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting...
8164142 Semiconductor device and method of manufacturing semiconductor device  
According to an aspect of an embodiment, a semiconductor device has a semiconductor substrate, a gate insulating film on the semiconductor substrate, a gate electrode formed on the gate insulating...
8159011 Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating transfer gate with potential well  
A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion...
8148771 Semiconductor device and method to manufacture thereof  
A semiconductor device 100 includes a semiconductor substrate 14, a connection electrode 12 disposed on an upper surface of the semiconductor substrate 14 and connected to an integrated circuit...

Matches 1 - 50 out of 347 1 2 3 4 5 6 7 >