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Match Document Document Title
7633123 Semiconductor device having super junction structure  
A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second...
7633102 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination  
Merging together the drift regions in a low-power trench MOSFET device via a dopant implant through the bottom of the trench permits use of a very small cell pitch, resulting in a very high channel...
7633120 Inverted-trench grounded-source field effect transistor (FET) structure using highly conductive substrates  
This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes a trenched gate surrounded by a source region encompassed in a body...
7632760 Semiconductor device having field stabilization film and method  
In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.
7629616 Silicon carbide self-aligned epitaxial MOSFET for high powered device applications  
A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown...
7626232 Voltage-controlled semiconductor device  
SiC-IGBTs, which have an inversion-type channel with high channel resistance and have high on-voltage due to an influence from the surface state of the interface between a gate insulating film and...
7622351 Method of manufacturing semiconductor device and semiconductor device  
A method of manufacturing a semiconductor device, includes: forming a first and a second trench regions adjacent from each other in a first conductivity type semiconductor base; forming a second...
7622758 CMOS image sensor with improved performance incorporating pixels with burst reset operation  
A reset transistor includes a floating diffusion region for detecting a charge, a junction region for draining the charge, a gate for controlling a transfer of the charge from the floating...
7622796 Semiconductor package having a bridged plate interconnection  
A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a...
7622771 Semiconductor apparatus  
A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer provided on a major surface of the first semiconductor layer, a third semiconductor layer provided on...
7619287 Method of forming a low capacitance semiconductor device and structure therefor  
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the...
7616859 Semiconductor device  
A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by...
7613442 Switch circuit and method of switching radio frequency signals  
A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching...
7612439 Semiconductor package having improved thermal performance  
A composite semiconductor package is disclosed. The package includes a lead frame having first and second die bonding pads, the first and second die bonding pads having a large lateral separation...
7605435 Bi-directional MOSFET power switch with single metal layer  
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The...
7605446 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation  
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A...
7605423 Semiconductor device  
A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type and a second semiconductor pillar region of a...
7602014 Superjunction power MOSFET  
An embodiment of an MOS device includes a semiconductor substrate of a first conductivity type, a first region of the first conductivity type having a length L acc and a net active dopant...
7598143 Method for producing an integrated circuit with a trench transistor structure  
A method for producing an integrated circuit including a semiconductor and in one embodiment a trench transistor structure, is disclosed. A first diffusion method is carried out. A second diffusion...
7595257 Process of forming an electronic device including a barrier layer  
An electronic device can include a substrate ( 12 ) having a primary surface ( 14 ), a second surface ( 16, 22 ) opposite the primary surface ( 14 ), and an electrode ( 50 ). In one embodiment, the...
7592668 Charge balance techniques for power devices  
A charge balance semiconductor power device includes an active area comprising a plurality of cells capable of conducting current when biased in a conducting state. A non-active perimeter region...
7586180 Semiconductor packaging device comprising a semiconductor chip including a MOSFET  
A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing...
7586132 Power FET with low on-resistance using merged metal layers  
In one embodiment, relatively thin but wide metal bus strips overlying a high power FET are formed to conduct current to the source and drain narrow metal strips. A passivation layer is formed over...
7586151 Insulated gate semiconductor device  
The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage....
7579652 Semiconductor device having a high withstand voltage  
To present a semiconductor device capable of operating stably even at large current, by lessening current concentration into the corners of contact opening after switching off and suppressing local...
7579649 Trench field effect transistor and method of making it  
Consistent with an example embodiment, a trench FET has source regions arranged above insulated gates in trenches. A body region of opposite conductivity type is arranged between the trenches and a...
7576393 Semiconductor device and method of manufacturing the same  
A semiconductor device comprises a pillar layer including first semiconductor pillars of a first conduction type and second semiconductor pillars of a second conduction type formed laterally,...
7576392 Semiconductor device including gate wiring, main electrodes and connecting plate connected onto said main electrodes  
A semiconductor device disclosed herein comprises a semiconductor layer which includes a first semiconductor region of a first conductivity type, a base region of a second conductivity type, and a...
7573095 Memory cells with improved program/erase windows  
A semiconductor structure includes a memory cell in a first region and a logic MOS device in a second region of a semiconductor substrate. The memory cell includes a first gate electrode over the...
7569883 Switching-controlled power MOS electronic device  
Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive...
7569875 Semiconductor device and a method for producing the same  
A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the...
7571415 Layout of power device  
A layout of a power device is provided. The layout includes a substrate, a unit array, a plurality of first, second, third and fourth signal paths, and a first, second, third and fourth port. The...
7566931 Monolithically-integrated buck converter  
An integrated buck converter is formed on a substrate of a first polarity type and having a first and second substrate surface. An epitaxial layer is formed over the first substrate surface and has...
7564095 Semiconductor device and method for manufacturing the same  
A semiconductor device includes: a semiconductor substrate; an element region having a semiconductor element including an impurity layer and a trench, wherein the impurity layer is disposed in the...
7564096 Scalable power field effect transistor with improved heavy body structure and method of manufacture  
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
7564099 Monolithic MOSFET and Schottky diode device  
A Schottky diode is integrated into a planar or trench topology MOSFET having parallel spaced source regions diffused into spaced base stripes. The diffusions forming the source and base stripes...
7560759 Semiconductor device and method of manufacturing the same  
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process....
7560773 Semiconductor device  
A vertical-type semiconductor device for controlling a current flowing between electrodes opposed against each other across a semiconductor substrate, including: a semiconductor substrate having...
7557386 Reverse conducting IGBT with vertical carrier lifetime adjustment  
A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back...
7554155 Power semiconductor device and method of manufacturing the same  
A power semiconductor device has a first main electrode formed along a surface of a substrate, a first semiconductor layer of first conductive type electrically connected to the first main...
7553731 Method of manufacturing semiconductor device  
A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second...
7554153 Power semiconductor device  
A power semiconductor device which includes an implant region in the base region thereof to reduce Qgd.
7550804 Semiconductor device and method for forming the same  
A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the semiconductor substrate may have a plurality of first and second...
7547946 MOS semiconductor device with low ON resistance  
The semiconductor device 1 includes transistors 10, 20. Each of the transistors 10 (first transistor) is a MOSFET, and includes source regions 102, 106, a drain region 104, and a gate...
7544995 Power converter employing a micromagnetic device  
A power converter including a power train, a controller and a driver. In one embodiment, the power train includes a switch that conducts for a duty cycle and provides a regulated output...
7541643 Semiconductor device  
This semiconductor device comprises a pillar layer including a first semiconductor pillar layer of a first conductivity type and a second semiconductor pillar layer of a second conductivity type...
7538388 Semiconductor device with a super-junction  
A semiconductor device has a semiconductor substrate, and a parallel p-n layer provided between the main surface and the back surface of the semiconductor substrate, and first-conductivity-type...
RE40712 High-breakdown-voltage semiconductor apparatus  
A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg[F], a resistance in a...
7535076 Power semiconductor device  
The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power...
7535059 Semiconductor device and manufacturing method of the semiconductor device  
A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is...
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