Patents in Class 257/336

Matches 1 - 50 out of 698

Match	Document	Document Title
1	8178432	Semiconductor device and method for fabricating the same Semiconductor devices and methods for fabricating the same are disclosed. The semiconductor device includes gate electrodes having sidewall spacers on a semiconductor substrate, double diffusion...
2	8174067	Trench-based power semiconductor devices with increased breakdown voltage characteristics Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
3	8174068	Semiconductor device having vertical transistor, manufacturing method thereof, and data processing system A semiconductor device includes: a semiconductor substrate; a silicon pillar provided perpendicularly to a main surface of the semiconductor substrate; a gate dielectric film that covers a portion...
4	8159036	Semiconductor device and method of manufacturing the same A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of...
5	8159001	Graded junction high voltage semiconductor device A graded junction space decreasing an implant concentration gradient between n-well and p-well regions of a semiconductor device is provided for enhancing breakdown voltage in high voltage...
6	8154077	Semiconductor device According to an embodiment, a semiconductor device includes a gate electrode formed on a semiconductor substrate via an insulating layer; a source region including an extension region, a drain...
7	8148777	Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 500, 510, or 530; or 220, 220W, or 540) is provided with a hypoabrupt vertical...
8	8148778	Semiconductor device and method for manufacturing the same A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain...
9	8138550	Method of manufacturing a semiconductor device and a semiconductor device A method of manufacturing a semiconductor device, has forming a gate insulating film over a surface of a substrate, eliminating a portion of the gate insulating film in a region, forming a gate...
10	8138559	Recessed drift region for HVMOS breakdown improvement A high-voltage metal-oxide-semiconductor (HVMOS) device having increased breakdown voltage and methods for forming the same are provided. The HVMOS device includes a semiconductor substrate; a gate...
11	8129781	Method of forming memory devices by performing halogen ion implantation and diffusion processes Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line...
12	8120106	LDMOS with double LDD and trenched drain A LDMOS with double LDD and trenched drain is disclosed. According to some preferred embodiment of the present invention, the structure contains a double LDD region, including a high energy...
13	8120105	Lateral DMOS field effect transistor with reduced threshold voltage and self-aligned drift region A method of forming a lateral DMOS transistor includes performing a low energy implantation using a first dopant type and being applied to the entire device area. The dopants of the low energy...
14	8120104	Semiconductor device and method of manufacturing semiconductor device A sinker layer is in contact with a first conductivity-type well, and is separated from a first conductivity-type collector layer and a second conductivity-type drift layer. A second...
15	8119507	Lateral double-diffused metal oxide semiconductor (LDMOS) transistors Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can...
16	8120058	High-drive current MOSFET A method of forming a semiconductor device having an asymmetrical source and drain. In one embodiment, the method includes forming a gate structure on a first portion of the substrate having a well...
17	8110897	Semiconductor device with carbon-containing region The semiconductor device of the present invention includes: a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating...
18	8106467	Semiconductor device having carrier mobility raised by generating strain in channel region A transistor is formed in the active region of a semiconductor substrate. A sidewall structure is disposed on the sidewalls of a gate electrode. A stress control film covers the semiconductor...
19	8097518	Semiconductor device and manufacturing method therefor There is provided a semiconductor device including a semiconductor substrate (10), a high concentration diffusion region (22) formed within the semiconductor substrate (10), a first low...
20	8080845	Semiconductor device A semiconductor device includes a gate insulating film formed over a semiconductor substrate, a gate electrode formed over the gate insulating film, a source region formed in the semiconductor...
21	8076736	Semiconductor device and method for manufacturing the same A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4)...
22	8067801	Semiconductor device and method of manufacturing the same A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain...
23	8063443	Hybrid-mode LDMOS An MOS-bipolar hybrid-mode LDMOS device has a main gate input and a control gate input wherein the device operates in an MOS mode when both gate inputs are enabled, and operates in a bipolar mode...
24	8053843	Integrated electrostatic discharge (ESD) device A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well...
25	8048765	Method for fabricating a MOS transistor with source/well heterojunction and related structure According to an exemplary embodiment, a method for fabricating a MOS transistor, such as an LDMOS transistor, includes forming a gate stack over a well. The method further includes forming a recess...
26	8049275	Semiconductor device There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than...
27	8048730	Semiconductor device and method for manufacturing the same Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes an isolation area formed on a semiconductor substrate to define NMOS and PMOS areas,...
28	8049338	Power semiconductor module and fabrication method A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a...
29	8043911	Methods of forming semiconductor constructions The invention includes methods of forming semiconductor constructions in which a single etch is utilized to penetrate through a titanium-containing layer and partially into a silicon-containing...
30	8039897	Lateral MOSFET with substrate drain connection In one form a lateral MOSFET includes an active gate positioned laterally between a source region and a drain region, the drain region extending from an upper surface of a monocrystalline...
31	8039323	Semiconductor device and manufacturing method thereof A semiconductor device includes a semiconductor layer with an impurity of a first conductivity type diffused therein, and a local insulating layer, source layer, and a drain layer formed therein....
32	8035140	Method and layout of semiconductor device with reduced parasitics An semiconductor device is disclosed. The device includes a semiconductor body, a layer of insulating material disposed over the semiconductor body, and a region of gate electrode material disposed...
33	8030705	Semiconductor device and method of fabricating the same Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device can provide a trench MOS transistor having an up-drain structure. The...
34	8021971	Structure and method to form a thermally stable silicide in narrow dimension gate stacks An integrated circuit is provided including a narrow gate stack having a width less than or equal to 65 nm, including a silicide region comprising Pt segregated in a region of the silicide away...
35	8013390	Semiconductor architecture having field-effect transistors especially suitable for analog applications An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) has a hypoabrupt vertical dopant profile below...
36	8008718	Semiconductor device and production method thereof The semiconductor device of the present invention is a semiconductor device including P-type and N-type thin film transistors, at least one of the N-type thin film transistors having an off-set...
37	8004038	Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process A semiconductor device includes a first high-voltage well having a first dopant disposed in a semiconductor substrate; a second high-voltage well having a second dopant disposed in the...
38	7982263	Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a...
39	7977743	Alternating-doping profile for source/drain of a FET A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the substrate. The transistor may include a gate structure, a source region, and a...
40	7968921	Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions An asymmetric insulated-gate field-effect transistor (100) has a source (240) and a drain (242) laterally separated by a channel zone (244) of body material (180) of a semiconductor body. A gate...
41	7956425	Graded gate field Thin film transistors (TFT) and methods for making same. The TFTs generally comprise: (a) a semiconductor layer comprising source and drain terminals and a channel region therebetween; (b) a gate...
42	7952142	Variable width offset spacers for mixed signal and system on chip devices MOSFET gate structures comprising multiple width offset spacers are provided. A first and a second gate structure are formed on a semiconductor substrate. A pair of first offset spacers are formed...
43	7944035	Double sided semiconduction device with edge contact and package therefor A semiconductor die has devices such as MOSgated devices, diodes and the like formed into the top and bottom surfaces of the die. One terminal of each of the devices terminal in the interior center...
44	7936006	Semiconductor device with backfilled isolation An MOS device has an embedded dielectric structure underlying an active portion of the device, such as a source extension or a drain extension. In an alternative embodiment, an embedded dielectric...
45	7932558	Semiconductor device and method for manufacturing the same A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain...
46	7928481	*WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST* Method and layout of semiconductor device with reduced parasitics An semiconductor device is disclosed. The device includes a semiconductor body, a layer of insulating material disposed over the semiconductor body, and a region of gate electrode material disposed...
47	7923777	Power semiconductor device and method for manufacturing the same Disclosed are a power semiconductor device and a method for manufacturing the same. The power semiconductor device has a PIP capacitor and an LDMOS transistor, the LDMOS transistor having second...
48	7919812	Partially depleted SOI field effect transistor having a metallized source side halo region Source and drain extension regions and source side halo region and drain side halo region are formed in a top semiconductor layer aligned with a gate stack on an SOI substrate. A deep source region...
49	7902020	Semiconductor device and method of manufacturing the same A semiconductor device includes a first conductivity-type deep well formed in a substrate, a plurality of device isolation layers formed in the substrate in which the first conductivity-type deep...
50	7898028	Process for fabricating a strained channel MOSFET device A process for fabricating a MOSFET device featuring a channel region comprised with a silicon-germanium component is provided. The process features employ an angled ion implantation procedure to...

Matches 1 - 50 out of 698

1 2 3 4 5 6 7 8 9 10 11 12 13 14 >