Patents in Class 257/335

Matches 1 - 50 out of 545

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Match	Document	Document Title
1	7622741	Semiconductor device and method for manufacturing same A semiconductor device of a double diffused MOS structure employing a silicon carbide semiconductor substrate. The semiconductor device comprises a silicon carbide semiconductor epitaxial layer...
2	7615822	Diffused drain transistor A transistor has a source that includes a first impurity region with a first volume and a first surface area on a surface of the transistor. The transistor also has a drain that includes a second...
3	7608868	Semiconductor device and method for manufacturing the same The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried...
4	7605428	High-voltage depletion mode MOSFET All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a...
5	7605425	Power MOS device A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a...
6	7602037	High voltage semiconductor devices and methods for fabricating the same An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite...
7	7602017	Short channel LV, MV, and HV CMOS devices Low voltage, middle voltage and high voltage CMOS devices have upper buffer layers of the same conductivity type as the sources and drains that extend under the sources and drains and the gates but...
8	7598549	Semiconductor device having a silicon layer in a gate electrode A CMOS device includes a silicon substrate, a gate insulating film, and a gate electrode including a silicon layer doped with boron and phosphorous, a tungsten nitride layer and a tungsten layer. A...
9	7595530	Power semiconductor device with epitaxially-filled trenches A single crystal semiconductor layer of a first conduction type is disposed on a surface of a semiconductor substrate. A plurality of trenches are provided in the semiconductor layer to form a...
10	7592668	Charge balance techniques for power devices A charge balance semiconductor power device includes an active area comprising a plurality of cells capable of conducting current when biased in a conducting state. A non-active perimeter region...
11	7586150	Semiconductor devices with local recess channel transistors and methods of manufacturing the same A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed...
12	7579651	Semiconductor device In a semiconductor device of the present invention, a thin gate oxide film is formed on a P-type diffusion layer. On the gate oxide film, a gate electrode is formed. N-type diffusion layers are...
13	7576392	Semiconductor device including gate wiring, main electrodes and connecting plate connected onto said main electrodes A semiconductor device disclosed herein comprises a semiconductor layer which includes a first semiconductor region of a first conductivity type, a base region of a second conductivity type, and a...
14	7576391	High-voltage lateral trench MOSFET All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a...
15	7576390	System for vertical DMOS with slots A method for providing a high power, low resistance, high efficient vertical DMOS device is disclosed. The method comprises providing a semiconductor substrate with a source body structure thereon....
16	7573098	Transistors fabricated using a reduced cost CMOS process An NMOS transistor includes a semiconductor substrate of a first conductivity type, first and second well regions of a second conductivity type formed spaced apart in the substrate, a conductive...
17	7573095	Memory cells with improved program/erase windows A semiconductor structure includes a memory cell in a first region and a logic MOS device in a second region of a semiconductor substrate. The memory cell includes a first gate electrode over the...
18	7569884	LDMOS transistor A lateral DMOS transistor having a uniform distribution of channel impurity concentration includes a drift region of a first conductivity; a body of a second conductivity, the body being disposed...
19	7566933	Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device Disclosed is a trench-gate semiconductor device including: a trench gate structure; a source layer having a first conductivity type, facing a gate electrode via a gate insulating film, and having a...
20	7566914	Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron...
21	7560771	Insulated gate transistor A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each...
22	7557410	Dynamic random access memory device A semiconductor device comprises a plurality of gate structures formed on a substrate, a gate spacer formed on a sidewall of the gate structures, a semiconductor pattern formed on the substrate...
23	7554157	Lateral SOI component having a reduced on resistance An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the...
24	7550803	Vertical double-diffusion metal-oxide-semiconductor transistor device A vertical double-diffusion metal-oxide-semiconductor (VDMOS) transistor device includes a first conductive type semiconductor substrate, a gate structure formed in a first trench in the first...
25	7544995	Power converter employing a micromagnetic device A power converter including a power train, a controller and a driver. In one embodiment, the power train includes a switch that conducts for a duty cycle and provides a regulated output...
26	7541653	Mask ROM devices of semiconductor devices and method of forming the same Disclosed are a mask ROM device and a method of forming the same. This device includes a plurality of cells. At least one among the plurality of cells is programmed. The programmed cell includes a...
27	7535058	Lateral DMOS structure A lateral DMOS structure includes a light doped p-type region beneath and near the gate at the drain side. The electric field on the surface near the gate is reduced. Thus the electric field near...
28	7535057	DMOS transistor with a poly-filled deep trench for improved performance Floating trenches are arranged in the layout of a single DMOS transistor or an array of DMOS transistors, the array forming a single power transistor. The trenches run perpendicular to the gate...
29	7535056	Semiconductor device having a low concentration layer formed outside a drift layer A semiconductor device includes a substrate, a first electrode and a second electrode formed on the substrate, and a drift layer which is formed between the first electrode and the second...
30	7531876	Semiconductor device having power semiconductor elements A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises...
31	7525153	Laterally double-diffused metal oxide semiconductor transistor and method for fabricating the same The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a...
32	7525151	Vertical DMOS device in integrated circuit An integrated circuit that includes at least one vertical conduction DMOS device and other semiconductor devices.
33	7525150	High voltage double diffused drain MOS transistor with medium operation voltage A method of fabricating a high voltage MOS transistor with a medium operation voltage on a semiconductor wafer. The transistor has a double diffused drain (DDD) and a medium operation voltage such...
34	7521758	DMOS device of small dimensions and manufacturing process thereof In a body of semiconductor material, a field region separates a first active area and a second active area. A drain region is formed in the first active area; a body region is formed in the second...
35	7521757	Semiconductor device with back surface electrode including a stress relaxation film A semiconductor device includes a semiconductor substrate which has first and second principal surface regions; an insulated gate structure which is formed in the first principal surface region; a...
36	7521756	DMOS transistor with optimized periphery structure A lateral DMOS transistor is disclosed that includes a first region of a first conductivity type, which is surrounded on the sides by a second region of a second conductivity type, whereby a...
37	7511340	Semiconductor devices having gate structures and contact pads that are lower than the gate structures Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate...
38	7489007	High-voltage lateral DMOS device All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a...
39	7485924	Lateral double-diffused field effect transistor and integrated circuit having same In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond...
40	7485923	SOI semiconductor device with improved halo region and manufacturing method of the same A semiconductor device includes a first insulating layer, a semiconductor layer formed on the first insulating layer, a second insulating layer on a part of the semiconductor layer, and a gate...
41	7485922	Isolation structure for semiconductor device including double diffusion isolation region forming PN junction with neighboring wells and isolation region beneath In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. The substrate and the epitaxial layer are partitioned into a...
42	7485920	Process to create buried heavy metal at selected depth Semiconductor devices having recombination centers comprised of well-positioned heavy metals. At least one lattice defect region within the semiconductor device is first created using particle beam...
43	7473625	LDMOS device and method of fabrication An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a...
44	7470955	Technique for improving negative potential immunity of an integrated circuit An integrated circuit (IC) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in...
45	7470952	Power IGBT with increased robustness A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a...
46	7468537	Drain extended PMOS transistors and methods for making the same Semiconductor devices ( 102 ) and drain extended PMOS transistors (CT 1 a ) are provided, as well as fabrication methods ( 202 ) therefor, in which a p-type separation region ( 130 ) is formed...
47	7462892	Semiconductor device A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high...
48	7449400	Method of forming an isolation film in a semiconductor device The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped...
49	7446375	Quasi-vertical LDMOS device having closed cell layout A low voltage power device includes a plurality of quasi-vertical LDMOS device cells. A conductive trench sinker is formed through the epitaxial layer and adjacent a selected one of the source and...
50	7442613	Methods of forming an asymmetric field effect transistor A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant...

Matches 1 - 50 out of 545

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