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9041085 Semiconductor device and method of forming the same  
A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in...
9041099 Single-sided access device and fabrication method thereof  
The present invention provides a single-sided access device including an active fin structure comprising a source region and a drain region; an insulating layer interposed between the source...
9035378 Trench power MOSFET structure fabrication method  
A trench power MOSFET structure and fabrication method thereof is provided. The fabrication method comprises following process. First, form an isolating trench. Then, form at least two doped...
9029930 FinFET device with epitaxial structure  
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin...
9029941 Vertical transistor component  
A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first...
9024379 Trench transistors and methods with low-voltage-drop shunt to body diode  
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has...
9018700 Direct-drain trench FET with source and drain isolation  
In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface. The apparatus can also include a well region of...
9012983 Semiconductor device and method of forming the same  
A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions...
9012984 Field effect transistor devices with regrown p-layers  
A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type,...
9006820 Vertical DMOS transistor  
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated...
9000702 Power management multi-chip module with separate high-side driver integrated circuit die  
A packaged device includes a first die, a second die, and specially spaced and positioned sets of package terminals. The first die includes a pulse-width modulator (PWM), a processor, a timer,...
8999789 Super-junction trench MOSFETs with short terminations  
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface...
9000515 Super-junction trench MOSFETs with short terminations  
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface...
9000514 Fabrication of trench DMOS device having thick bottom shielding oxide  
Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected...
8994125 Semiconductor device including a field effect transistor  
A semiconductor device includes, on a semiconductor substrate, a gate insulating film, a pMIS metal material or an nMIS metal material, a gate electrode material, and a gate sidewall metal layer.
8994100 Semiconductor device including source and drain offset regions  
The present invention provides a semiconductor device designed to prevent an electric field from being concentrated in the vicinity of a groove portion. The semiconductor includes a semiconductor...
8987811 Semiconductor devices including a vertical channel transistor and methods of fabricating the same  
According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower...
8987815 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same  
An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor...
8981471 Insulated gate semiconductor device  
In a MOSFET, the lead parts of gate lead wiring that lead out a gate electrode on the periphery of a substrate constitute a non-operative region. If the gate lead wiring is disposed along the four...
8975691 Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof  
A trenched power semiconductor device with enhanced breakdown voltage is provided. The trenched power semiconductor device has a first trench penetrating the body region located between two...
8975690 Semiconductor device  
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third...
8975692 Semiconductor device and method of fabricating the same  
Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant...
8963212 Trench-based power semiconductor devices with increased breakdown voltage characteristics  
In one general aspsect, a semiconductor device can include at least a first device region and a second device region disposed at a surface of a semiconductor region where the second device region...
8963240 Shielded gate trench (SGT) mosfet devices and manufacturing processes  
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells...
8963235 Trench power device and semiconductor structure thereof  
A semiconductor structure of a trench power device comprises a base, an insulating layer, and a source conductive layer. The base includes a first trench etched from the top surface thereof, and...
8963236 Data storage device and methods of manufacturing the same  
Provided are data storage devices and methods of manufacturing the same. The device may include a plurality of cell selection parts formed in a substrate, a plate conductive pattern covering the...
8957474 MOS transistors including U shaped channels regions with separated protruding portions  
A MOS transistor, can include a u-shaped cross-sectional channel region including spaced apart protruding portions separated by a trench and connected to one another by a connecting portion of the...
8956940 Oxide terminated trench MOSFET with three or four masks  
An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are located in an active region. Each...
8952430 Semiconductor device and method for manufacturing semiconductor device  
The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell...
8946816 High frequency switching MOSFETs with low output capacitance using a depletable P-shield  
Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The source contacts are self-aligned...
8933509 Semiconductor device and method for fabricating the same  
A semiconductor device includes a device isolation structure, a recess channel structure, a first lower gate conductive layer conformal to the recess channel structure and defining a recess, a...
8933501 Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device  
A monolithic three dimensional NAND string includes a vertical semiconductor channel and a plurality of control gate electrodes in different device levels. The string also includes a blocking...
8932924 Trench-based power semiconductor devices with increased breakdown voltage characteristics  
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
8928073 Semiconductor devices including guard ring structures  
A semiconductor device includes a substrate partitioned into a cell region, a peripheral circuit region, and an interface region between the cell region and the peripheral circuit region. A guard...
8928065 Trench DMOS device with improved termination structure for high voltage applications  
A termination structure for a power transistor includes a semiconductor substrate having an active region and a termination region. The substrate has a first type of conductivity. A termination...
8916930 Trenched power semiconductor device and fabrication method thereof  
A trenched power semiconductor device on a lightly doped substrate is provided. The device has a base, a plurality of trenches including at least a gate trench, a plurality of first heavily doping...
8907413 Dual trench MOS transistor and method for forming the same  
A dual trench MOS transistor comprises of the following elements. A plurality of trenches are formed in an n− epitaxial layer on a heavy doped n+ semiconductor substrate and spaced to each other...
8907418 Semiconductor device  
A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main...
8907416 Dual gate oxide trench MOSFET with channel stop trench  
A semiconductor device and fabrication methods are disclosed. The device includes a plurality of gate electrodes formed in trenches located in an active region of a semiconductor substrate. A...
8907415 High switching trench MOSFET  
A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode...
8901641 Semiconductor device with super junction structure and method for fabricating the same  
A semiconductor device with a super-junction structure is provided, including: a semiconductor substrate having a first conductivity type; an epitaxial layer having the first conductivity type...
8901630 Transistor, semiconductor device, and semiconductor module including the same  
A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region...
8900950 Trench power MOSFET structure with high cell density and fabrication method thereof  
A fabrication method of a high cell density trench power MOSFET structure is provided. Form at least a gate trench in a silicon substrate and a gate dielectric layer on the silicon substrate. Form...
8901647 Semiconductor device including first and second semiconductor elements  
A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a...
8890242 Closed cell trenched power semiconductor structure  
A closed cell trenched power semiconductor structure is provided. The closed cell trenched power semiconductor structure has a substrate and cells. The cells are arranged on the substrate in an...
8890252 Semiconductor device having switching element and free wheel diode and method for controlling the same  
A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched...
8883621 Semiconductor structure and method of fabricating MOS device  
Provided is a semiconductor structure including a gate structure, a first spacer, and a second spacer. The gate structure is formed on a substrate and includes a gate material layer, a first hard...
8884366 Semiconductor device with buried bit lines  
A semiconductor device includes an active region having a sidewall, which has a sidewall step, a junction formed under a surface of the sidewall step, and a buried bit line configured to contact...
8878293 Semiconductor device having DC structure  
A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the...
8878285 Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device  
A vertical semiconductor device having a vertical channel region is disclosed. The vertical semiconductor device includes a pillar having a vertical channel region, a bit line buried in a...