Patents in Class 257/330

Matches 1 - 50 out of 942

Match	Document	Document Title
1	7622770	Semiconductor device having a trench gate and method of fabricating the same A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is...
2	7622769	Isolation trench A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, an oxygen barrier is deposited into the...
3	7622768	Semiconductor device and method of manufacturing thereof On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover,...
4	7622351	Method of manufacturing semiconductor device and semiconductor device A method of manufacturing a semiconductor device, includes: forming a first and a second trench regions adjacent from each other in a first conductivity type semiconductor base; forming a second...
5	7622350	Method of manufacturing semiconductor device having cell transistor with recess channel structure A method of manufacturing a semiconductor device is provided. Device separation portions defining first, second and third regions are formed in a substrate. A recess is formed at the first region....
6	7619281	Semiconductor device having buried gate line and method of fabricating the same A semiconductor device having a buried gate line with a shaped gate trench and a method of fabricating the same are disclosed. The semiconductor device includes a trench isolation layer provided in...
7	7619280	Current sense trench type MOSFET with improved accuracy and ESD withstand capability The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an...
8	7619275	Process for forming an electronic device including discontinuous storage elements A process for forming an electronic device can include forming a trench within a substrate, wherein the trench includes a wall and a bottom. The process can also include including forming a portion...
9	7619270	Electronic device including discontinuous storage elements An electronic device can include discontinuous storage elements that lie within a trench. The electronic device can include a substrate including a trench that includes a wall and a bottom and...
10	7615813	Semiconductor device using fuse/anti-fuse system A first concave portion for the element isolation, a second concave portion for an aligning mark, and a third concave portion for an anti-fuse portion are formed simultaneously within a silicon...
11	7615449	Semiconductor device having a recess channel transistor The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower...
12	7612407	Trenched MOSFET device configuration with reduced mask processes A semiconductor power device comprising a termination area that includes a trenched gate runner electrically connected to a trenched gate of said semiconductor power device. The semiconductor power...
13	7612406	Transistor, memory cell array and method of manufacturing a transistor A transistor includes a first and second source/drain regions, a channel connecting the first and second source/drain regions, and a gate electrode to control an electrical current flowing in the...
14	7611949	Method of fabricating metal-oxide-semiconductor transistor A method of fabricating a metal-oxide-semiconductor (MOS) transistor is provided. First, a patterned hard mask layer with an opening therein is formed over the substrate. A spacer is formed on the...
15	7608888	Field effect transistor A field effect transistor (FET), in accordance with one embodiment, includes a first semiconductor layer, a first dielectric layer, a second semiconductor layer, a second dielectric layer and a...
16	7605426	Power semiconductor device A power semiconductor device includes: a semiconductor substrate; a gate insulating film; a control electrode insulated from the semiconductor substrate by the gate insulating film; a first main...
17	7605425	Power MOS device A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a...
18	7605424	Semiconductor device and method of manufacturing semiconductor device A semiconductor device including: a semiconductor region having a first semiconductor face and a second semiconductor face connected to the first semiconductor face and having an inclination with...
19	7602015	Process to control semiconductor wafer yield The size of BV DSS distribution is controlled by the active manipulation of the distribution of silicon parameters across a wafer to offset opposing effects inherent in the wafer fabrication...
20	7598566	Trench gate field effect devices The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus...
21	7598550	MOS transistor and manufacturing method thereof There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer,...
22	7598143	Method for producing an integrated circuit with a trench transistor structure A method for producing an integrated circuit including a semiconductor and in one embodiment a trench transistor structure, is disclosed. A first diffusion method is carried out. A second diffusion...
23	7595529	Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the same Provided are semiconductor integrated circuit (IC) devices having an upper pattern aligned with a lower pattern molded by a semiconductor substrate and methods of forming the same. In the...
24	7595524	Power device with trenches having wider upper portion than lower portion A field effect transistor includes a plurality of trenches extending into a silicon layer. Each trench has upper sidewalls that fan out. Contact openings extend into the silicon layer between...
25	7592647	Semiconductor device and manufacturing method thereof A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region,...
26	7589377	Gate structure with low resistance for high power semiconductor devices In accordance with an embodiment of the present invention, a gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device includes a dielectric layer formed into a U-shape having side walls...
27	7589371	Semiconductor device and fabrication method therefor The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches ( 11 ) formed in a semiconductor substrate ( 10 ), first ONO films...
28	7589369	Semiconductor constructions The invention includes a method in which a semiconductor substrate is provided to have a memory array region, and a peripheral region outward of the memory array region. Paired transistors are...
29	7586152	Semiconductor structure The present invention discloses a structure of a buried word line, which comprises a semiconductor substrate having a U-shape trench, a U-shape gate dielectric layer in the U-shape trench, a...
30	7586151	Insulated gate semiconductor device The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage....
31	7586150	Semiconductor devices with local recess channel transistors and methods of manufacturing the same A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed...
32	7585710	Methods of forming electronic devices having partially elevated source/drain structures Methods of forming an electronic device may include forming a gate electrode on a semiconductor substrate, and forming first and second impurity doped regions of the semiconductor substrate on...
33	7582932	Silicon carbide semiconductor device and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor...
34	7582931	Recessed gate electrodes having covered layer interfaces and methods of forming the same A gate electrode of a transistor can include an interface between a polysilicon conformal layer and a tungsten layer thereon in a trench in a substrate and a capping layer extending across the...
35	7579669	Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has...
36	7579656	Transistor structure for semiconductor device and method of fabricating the same A transistor for a semiconductor device may include a lower semiconductor layer, an active pattern, including a groove region, on the lower semiconductor layer, a gate pattern at least partially...
37	7576389	Semiconductor device and manufacture method thereof The present invention provides a trench gate Tr having a first gate electrode and a second gate electrode in the inside of a groove. The first gate electrode is provided in a groove lower part...
38	7576388	Trench-gate LDMOS structures MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for...
39	7575989	Method of manufacturing a transistor of a semiconductor device A method of manufacturing a transistor in which gate resistance is lowered and short channel effects are controlled by forming a trench-type gate. The threshold voltage can also be more tightly...
40	7575974	Method for fabricating semiconductor device including recess gate A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate having a field oxide layer, etching the substrate to form a recess by using the hard mask...
41	7573114	Electronic device including a gated diode An electronic device can include a gated diode, wherein the gated diode includes a junction diode structure including a junction. A first conductive member spaced apart from and adjacent to the...
42	7573100	High voltage semiconductor device and method for fabricating the same There is provided a high voltage semiconductor device comprising: a semiconductor substrate of a first conductivity type, including a first region, a second region relatively lower than the first...
43	7573096	Semiconductor device for reducing forward voltage by using OHMIC contact MOS FETs are formed by a drain layer 101 , a drift layer 102 , P-type body areas 103 , N + -type source areas 105 , gate electrodes 108 , a source electrode film 110 , and a drain electrode...
44	7573089	Non-volatile memory device Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
45	7572687	Semiconductor device and manufacturing method of the same Disclosed is a semiconductor device. The semiconductor device includes a first gate formed in a trench of a semiconductor substrate, a first gate oxide layer on the semiconductor substrate...
46	7569879	Nonvolatile semiconductor memory device and manufacturing method thereof A nonvolatile semiconductor memory device includes a semiconductor substrate, plural semiconductor columns arranged in a matrix form on the substrate, plural first conductive areas zonally formed...
47	7566933	Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device Disclosed is a trench-gate semiconductor device including: a trench gate structure; a source layer having a first conductivity type, facing a gate electrode via a gate insulating film, and having a...
48	7566932	Static random access memory unit A static random access memory (SRAM) unit comprising a substrate, a gate dielectric layer, a gate, a trench capacitor, a pair of source/drain regions, a first contact and a second contact is...
49	7566930	Nonvolatile memory device and method for fabricating the same A nonvolatile (e.g., flash) memory device includes a substrate having a plurality of isolation areas and active areas; a trench formed on the isolation area; a first electrode layer formed on an...
50	7566645	Semiconductor device and method for fabricating the same A method for fabricating a semiconductor device is provided. In the method, a bulb type recess is formed on a semiconductor substrate in an active region. A gate insulating film is formed over the...

Matches 1 - 50 out of 942

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