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9041008 Semiconductor device and method of manufacturing the same  
A semiconductor device of an embodiment includes a first conductive type silicon carbide substrate having first and second main surfaces, a first conductive type silicon carbide layer formed on...
9041098 Semiconductor device  
According to one embodiment, the semiconductor device is provided with a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a pair of first conductors, a pair of...
9041049 Power JFET  
In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through...
9041057 Field effect transistor device with shaped conduction channel  
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and...
9041104 Semiconductor device  
A memory includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. A first channel region of a first conductivity type is...
9041097 Semiconductor device  
A semiconductor device includes a channel layer formed on a substrate, an insulating layer formed in contact with the channel layer, an impurity-doped first semiconductor layer formed on an...
9041085 Semiconductor device and method of forming the same  
A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in...
9035375 Field-effect device and manufacturing method thereof  
Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region, and a pocket implant region...
9035366 Semiconductor device and manufacturing method therefor  
A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a...
9029930 FinFET device with epitaxial structure  
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin...
9029943 Semiconductor memory device and method of manufacturing the same  
The semiconductor memory device includes a cell transistor having a gate insulating film deposited on an inner surface of a groove formed in an upper surface of the semiconductor substrate, a gate...
9029872 Semiconductor device and method for fabricating the same  
The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive...
9029871 Semiconductor device  
A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a...
9029870 Semiconductor device and manufacturing method thereof  
A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon...
9029941 Vertical transistor component  
A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first...
9024383 Semiconductor device with a super junction structure with one, two or more pairs of compensation layers  
A super junction semiconductor device comprises a semiconductor portion with mesa regions protruding from a base section. The mesa regions are spatially separated in a lateral direction parallel...
9024377 Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof  
A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the...
9024378 Device structure and manufacturing method using HDP deposited source-body implant block  
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a...
9024330 Semiconductor device and manufacturing method thereof  
A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming...
9018698 Trench-based device with improved trench protection  
A semiconductor device includes a semiconductor substrate having a first type of conductivity. A first layer is formed on the substrate having the first type of conductivity and is more lightly...
9018697 fin FET and method of fabricating same  
A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined...
9018699 Silicon carbide semiconductor element and method for fabricating the same  
A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a...
9018700 Direct-drain trench FET with source and drain isolation  
In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface. The apparatus can also include a well region of...
9012982 Recessed transistor and method of manufacturing the same  
A recessed transistor and a method of manufacturing the same are provided. The recessed transistor may include a substrate, an active pin, a gate pattern and source and drain regions. The...
9012961 Method of manufacturing a non-volatile memory  
The disclosure relates to a method of manufacturing vertical gate transistors in a semiconductor substrate, comprising implanting, in the depth of the substrate, a doped isolation layer, to form a...
9012985 Semiconductor device having a trench whose upper width is wider than a lower width thereof, and a method for fabricating the same  
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a trench disposed within a substrate, the trench comprising an upper trench part that is...
9012986 Combination FinFET and planar FET semiconductor device and methods of making such a device  
A device includes a plurality of trenches and fins defined in a substantially un-doped layer of semiconducting material, a gate insulation layer positioned on the fins and on the bottom of the...
9012980 Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure  
A method of manufacturing a semiconductor device includes forming a charge compensation device structure in a semiconductor substrate. The method further includes measuring a value of an electric...
9012957 MOS transistor  
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof,...
9012983 Semiconductor device and method of forming the same  
A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions...
9012984 Field effect transistor devices with regrown p-layers  
A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type,...
9006820 Vertical DMOS transistor  
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated...
9006067 Semiconductor device and method of fabricationg the same  
A method of fabricating a semiconductor device includes forming first gate patterns on a semiconductor substrate using an etch mask pattern, forming a trench in the semiconductor substrate between...
9006821 Electronic device comprising a conductive structure and an insulating layer within a trench  
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the...
9006822 Trench-gate RESURF semiconductor device and manufacturing method  
A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the...
9006798 Semiconductor device including trench transistor cell array and manufacturing method  
A semiconductor device includes a trench transistor cell array in a silicon semiconductor body with a first main surface and a second main surface opposite to the first main surface. A main...
9006824 Power semiconductor device with reduced on-resistance and increased breakdown voltage  
In one implementation, a power semiconductor device includes an active region and a termination region. A depletion trench finger extends from the active region and ends in the termination region....
9006823 Semiconductor device and method of manufacturing semiconductor device  
A semiconductor device includes: a semiconductor substrate formed with an element region; a first conductive type first region formed in the element region and located on a surface side of the...
9006839 Semiconductor device  
In a semiconductor substrate of a semiconductor device, a drift layer, a body layer, an emitter layer, and a trench gate electrode are formed. When the semiconductor substrate is viewed in a plane...
9000538 Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same  
A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a...
9000515 Super-junction trench MOSFETs with short terminations  
A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface...
8999769 Integration of high voltage trench transistor with low voltage CMOS transistor  
A method of forming a device is disclosed. A substrate defined with a device region is provided. A gate having an upper and a lower portion is formed in a trench in the substrate in the device...
9000514 Fabrication of trench DMOS device having thick bottom shielding oxide  
Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected...
RE45449 Power semiconductor having a lightly doped drift and buffer layer  
A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped...
8994123 Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)  
Variation resistant metal-oxide-semiconductor field effect transistors (MOSFETs) are manufactured using a high-K, metal-gate ‘channel-last’ process. A cavity is formed between spacers formed over...
8994023 Thin film transistor array substrate and method of fabricating the same  
A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin...
8994143 Semiconductor device with SEG film active region  
A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a...
8994101 Shielded gate trench MOS with improved source pickup layout  
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and...
8994100 Semiconductor device including source and drain offset regions  
The present invention provides a semiconductor device designed to prevent an electric field from being concentrated in the vicinity of a groove portion. The semiconductor includes a semiconductor...
8994112 Fin field effect transistor (finFET)  
A Fin FET whose fin (12) has an upper portion (30) doped with a first conductivity type and a lower portion (32) doped with a second conductivity type, wherein the junction (34) between the upper...