Match Document Document Title
9105609 Oxide-based semiconductor non-linear element having gate electrode electrically connected to source or drain electrode  
A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film...
9041008 Semiconductor device and method of manufacturing the same  
A semiconductor device of an embodiment includes a first conductive type silicon carbide substrate having first and second main surfaces, a first conductive type silicon carbide layer formed on...
9041095 Vertical transistor with surrounding gate and work-function metal around upper sidewall, and method for manufacturing the same  
A method of manufacturing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a...
9041096 Superjunction semiconductor device and manufacturing method therefor  
A semiconductor device that includes the following is manufactured: an n− base layer; a p-type base layer formed on the surface of the n− base layer; an n+ source layer formed in the inner area of...
9041086 Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells  
A method of forming a vertical field effect transistor includes etching an opening into semiconductor material. Sidewalls and radially outermost portions of the opening base are lined with masking...
9035377 Semiconductor device  
A semiconductor device of an embodiment has a first conductive type first semiconductor layer, a second conductive type second semiconductor layer provided in the first semiconductor layer having...
9035376 Semiconductor device and method of manufacturing the same  
A semiconductor device and method of manufacturing the semiconductor device is disclosed in which the tradeoff relationship between the Eoff and the turning OFF dV/dt is improved at a low cost...
9029939 Method of manufacturing a vertical-type semiconductor device and method of operating a vertical-type semiconductor device  
In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor...
9029941 Vertical transistor component  
A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first...
9029940 Vertical tunneling field-effect transistor cell  
A tunneling field-effect transistor (TFET) device is disclosed. The TFET device includes a source contact on the source region, a plurality of gate contacts at a planar portion of a gate stack and...
9029942 Power transistor device with super junction  
The present invention provides a power transistor device with a super junction including a substrate, a first epitaxial layer, a second epitaxial layer, and a third epitaxial layer. The first...
9024383 Semiconductor device with a super junction structure with one, two or more pairs of compensation layers  
A super junction semiconductor device comprises a semiconductor portion with mesa regions protruding from a base section. The mesa regions are spatially separated in a lateral direction parallel...
9024376 Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillar  
A semiconductor device includes a pillar-shaped semiconductor having an impurity concentration of 1017 cm−3 or less, a first insulator that surrounds the pillar-shaped semiconductor, a first metal...
9024375 Nano-tube MOSFET technology and devices  
This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a...
9024374 3D memory array with improved SSL and BL contact layout  
A 3D memory device includes a plurality of ridges, in some embodiments ridge-shaped, in the form of multiple strips of conductive material separated by insulating material, arranged as bit lines...
9024373 Semiconductor devices having transistors capable of adjusting threshold voltage through body bias effect  
Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back...
9024381 Semiconductor device and fabricating method thereof  
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, and a super junction area that is disposed above the substrate. The super...
9018063 MOSFETs with channels on nothing and methods for forming the same  
A method includes performing an epitaxy to grow a semiconductor layer, which includes a top portion over a semiconductor region. The semiconductor region is between two insulation regions that are...
9018696 Nonvolatile semiconductor memory device and method of manufacturing the same  
A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive...
9018699 Silicon carbide semiconductor element and method for fabricating the same  
A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a...
9018695 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for manufacturing the same are disclosed, which can form a gate electrode material only in a recess of a buried gate cell structure, improve a Gate Induced...
9018686 Dual gate finFET devices  
A device comprises: a first plurality of fins on a semiconductor substrate, the first plurality of fins including a semiconductor material and extending perpendicular from the semiconductor...
9012961 Method of manufacturing a non-volatile memory  
The disclosure relates to a method of manufacturing vertical gate transistors in a semiconductor substrate, comprising implanting, in the depth of the substrate, a doped isolation layer, to form a...
9012981 Semiconductor device  
A semiconductor device includes a first pillar-shaped silicon layer formed on a planar silicon layer, a gate insulating film formed around the first pillar-shaped silicon layer, a first gate...
9012980 Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure  
A method of manufacturing a semiconductor device includes forming a charge compensation device structure in a semiconductor substrate. The method further includes measuring a value of an electric...
9012984 Field effect transistor devices with regrown p-layers  
A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type,...
9012977 Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics  
Provided is a semiconductor memory device. In the semiconductor memory device, a lower selection gate controls a first channel region that is defined at a semiconductor substrate and a second...
9013004 Quasi-vertical structure having a sidewall implantation for high voltage MOS device  
A semiconductor device includes a buried layer having a first dopant type in a substrate. The semiconductor device includes a first layer having the first dopant type over the buried layer. The...
9006820 Vertical DMOS transistor  
A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated...
9006079 Methods for forming semiconductor fins with reduced widths  
A method includes forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and after the forming the STI regions,...
9006067 Semiconductor device and method of fabricationg the same  
A method of fabricating a semiconductor device includes forming first gate patterns on a semiconductor substrate using an etch mask pattern, forming a trench in the semiconductor substrate between...
9006821 Electronic device comprising a conductive structure and an insulating layer within a trench  
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the...
9006822 Trench-gate RESURF semiconductor device and manufacturing method  
A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the...
9006824 Power semiconductor device with reduced on-resistance and increased breakdown voltage  
In one implementation, a power semiconductor device includes an active region and a termination region. A depletion trench finger extends from the active region and ends in the termination region....
9000513 Method for manufacturing a semiconductor device and semiconductor device with surrounding gate transistor  
A method for producing a semiconductor device includes a first step of forming a fin-shaped silicon layer on a silicon substrate using a first resist and forming a first insulating film...
9000538 Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same  
A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a...
RE45449 Power semiconductor having a lightly doped drift and buffer layer  
A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped...
8994084 Dynamic random access memory and method for fabricating the same  
The present invention provides a dynamic random access memory (DRAM) including a plurality of transistors formed in a semiconductor substrate, wherein each of the transistors includes a vertical...
8994099 Multi-level contact to a 3D memory array and method of making  
A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region...
8994098 Semiconductor device including pillar transistors  
A first pillar transistor and a second pillar transistor are arranged with no other pillar transistor therebetween, a distance between a first silicon pillar in the first pillar transistor and a...
8987817 Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereof  
A semiconductor device of the present invention includes: a semiconductor substrate of a first conductive type; an epitaxial layer of the first conductive type formed on the semiconductor...
8987811 Semiconductor devices including a vertical channel transistor and methods of fabricating the same  
According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower...
8987902 Semiconductor device, semiconductor package, and method for manufacturing semiconductor device  
A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a first surface, a second surface, and a through hole that extends through the semiconductor...
8987812 Semiconductor device and semiconductor device manufacturing method  
The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor...
8981457 Dense arrays and charge storage devices  
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is...
8981464 Wafer level chip scale package and process of manufacture  
Power wafer level chip scale package (CSP) and process of manufacture are enclosed. The power wafer level chip scale package includes all source, gate and drain electrodes located on one side of...
8981448 Variable resistance memory device with shunt gate connected to corresponding gate  
A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor.
8981481 High voltage three-dimensional devices having dielectric liners  
High voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. For example, a semiconductor...
8981463 Memory cell array with semiconductor selection device for multiple memory cells  
A memory array that includes access devices that are each electrically coupled to more than one memory cell. The memory cells are coupled to the access devices via diode devices. The access...
8975688 Semiconductor device with voltage compensation structure  
A voltage compensation structure includes a first semiconductor or insulating material disposed along one or more sidewalls of a trench formed in a doped epitaxial semiconductor material. The...