Patents in Class 257/329

Matches 1 - 50 out of 580

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Match	Document	Document Title
1	7638368	Reverse blocking semiconductor device and a method for manufacturing the same A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory...
2	7635892	Semiconductor device A semiconductor device has a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a recess defined in the second main surface by side...
3	7633118	Structure and fabrication method for capacitors integratible with vertical replacement gate transistors A process and an architecture related to a vertical MOSFET device and a capacitor for use in integrated circuits. Generally, the integrated circuit structure includes a semiconductor layer with a...
4	7629643	Independent n-tips for multi-gate transistors Independent n-tips for multi-gate transistors are generally described. In one example, an apparatus includes a semiconductor fin, one or more multi-gate pull down (PD) devices coupled with the...
5	7626219	Surround gate access transistors with grown ultra-thin bodies A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to...
6	7622769	Isolation trench A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, an oxygen barrier is deposited into the...
7	7619281	Semiconductor device having buried gate line and method of fabricating the same A semiconductor device having a buried gate line with a shaped gate trench and a method of fabricating the same are disclosed. The semiconductor device includes a trench isolation layer provided in...
8	7619279	Three dimensional flash cell A floating gate memory cell includes isolation regions between adjacent cells, and a staggered pattern of columns of cells. Word lines are formed parallel to control gate structures.
9	7608890	Semiconductor device and method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the...
10	7608888	Field effect transistor A field effect transistor (FET), in accordance with one embodiment, includes a first semiconductor layer, a first dielectric layer, a second semiconductor layer, a second dielectric layer and a...
11	7605426	Power semiconductor device A power semiconductor device includes: a semiconductor substrate; a gate insulating film; a control electrode insulated from the semiconductor substrate by the gate insulating film; a first main...
12	7598566	Trench gate field effect devices The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus...
13	7595241	Method for fabricating silicon carbide vertical MOSFET devices A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region...
14	7592230	Trench power device and method Means and methods are provided for trench TMOS devices ( 41 - 10, 11, 12 ), comprising, providing a first semiconductor ( 53, 53′ ) of a first composition having an upper surface ( 541 ), with a...
15	7586149	Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same A circuit device including vertical transistors connected to buried bitlines and a method of manufacturing the circuit device. The circuit device includes a semiconductor substrate including a...
16	7586151	Insulated gate semiconductor device The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage....
17	7586130	Vertical field effect transistor using linear structure as a channel region and method for fabricating the same A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region; a lower electrode, functioning as one of source and drain regions;...
18	7582939	Semiconductor diode, electronic component and voltage source inverter The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can...
19	7579648	Semiconductor device having a channel pattern and method of manufacturing the same A semiconductor device may include a tubular channel pattern vertically extending from a semiconductor substrate. A gate insulation layer may be provided on faces exposed through the channel...
20	7576393	Semiconductor device and method of manufacturing the same A semiconductor device comprises a pillar layer including first semiconductor pillars of a first conduction type and second semiconductor pillars of a second conduction type formed laterally,...
21	7566931	Monolithically-integrated buck converter An integrated buck converter is formed on a substrate of a first polarity type and having a first and second substrate surface. An epitaxial layer is formed over the first substrate surface and has...
22	7564095	Semiconductor device and method for manufacturing the same A semiconductor device includes: a semiconductor substrate; an element region having a semiconductor element including an impurity layer and a trench, wherein the impurity layer is disposed in the...
23	7564096	Scalable power field effect transistor with improved heavy body structure and method of manufacture A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate...
24	7557414	Semiconductor device and method for manufacturing the same In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate...
25	7557006	Methods of forming field effect transistors A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material...
26	7554155	Power semiconductor device and method of manufacturing the same A power semiconductor device has a first main electrode formed along a surface of a substrate, a first semiconductor layer of first conductive type electrically connected to the first main...
27	7554137	Power semiconductor component with charge compensation structure and method for the fabrication thereof A semiconductor component ( 1 ) with charge compensation structure ( 3 ) has a semiconductor body ( 4 ) having a drift path ( 5 ) between two electrodes ( 6, 7 ). The drift path ( 5 ) has drift...
28	7550805	Stress-controlled dielectric integrated circuit General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and...
29	7544570	Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device In a vertical-type metal insulator field effect transistor device having a first conductivity type drain region layer, a plurality of second conductivity type base regions are produced and arranged...
30	7541640	Vertical field-effect transistor and method of forming the same A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a...
31	7541641	Gate structure in a trench region of a semiconductor device and method for manufacturing the same Disclosed are a gate structure in a trench region of a semiconductor device and method for manufacturing the same. The semiconductor device includes a pair of drift regions formed in a...
32	RE40712	High-breakdown-voltage semiconductor apparatus A high-breakdown-voltage semiconductor apparatus is provided, wherein when a gate capacitance of that portion of a gate electrode, under which a channel is formed, is Cg[F], a resistance in a...
33	7531872	High voltage transistor and method for fabricating the same A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N + -type...
34	7528022	Method of forming fin field effect transistor using damascene process A method of forming a fin transistor using a damascene process is provided. A filling mold insulation pattern is recessed to expose an upper portion of a fin, and a mold layer is formed. The mold...
35	7528440	Vertical gain cell A vertical cell is realized. The cell includes a first vertical metal oxide semiconductor (MOS) transistor having a body between a drain region and a source region and a second vertical MOS...
36	7528439	Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array A vertical transistor having a wrap-around-gate and a method of fabricating such a transistor. The wrap-around-gate (WAG) vertical transistors are fabricated by a process in which source, drain and...
37	7521753	Integrated circuit devices having active regions with expanded effective widths An integrated circuit device includes a substrate having a trench formed therein. An isolation layer is disposed in the trench so as to cover a first sidewall portion of the trench and an entire...
38	7521752	Fin-type channel transistor and method of manufacturing the same It is possible to reliably implant an impurity into an impurity forming region, and to form a self-aligned silicides on the entire portion of the source and drain regions. There are provided: a...
39	7518197	Power semiconductor device A power semiconductor device has a first base layer of first conductive type, a contact layer of first conductive type formed on a surface of the first base layer, a second base layer of first...
40	7518182	DRAM layout with vertical FETs and method of formation DRAM cell arrays having a cell area of about 4F 2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide...
41	7514743	DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping One or more vertical DMOS transistors, such as trench FETS, are formed between opposing floating poly-filled trench portions. The opposing trench portions may include two parallel trenches,...
42	7514324	Selective epitaxy in vertical integrated circuit Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have...
43	7510955	Method of fabricating multi-fin field effect transistor A multi-fin field effect transistor includes a substrate, an oxide layer, a conductive layer, a gate oxide layer, and a doped region is provided. The substrate is surrounded by a trench, and there...
44	7504690	Power semiconductor devices A vertical insulated gate field effect power transistor ( 3 ) has a plurality of parallel transistor cells (TC 3 ) with a peripheral gate structure (G 31 , G 2 ) at the boundary between each two...
45	7504691	Power trench MOSFETs having SiGe/Si channel structure Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a...
46	7498614	Voltage sustaining layer with opposite-doped islands for semiconductor power devices A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n (or p)-layer containing a plurality of...
47	7492003	Superjunction power semiconductor device A superjunction power semiconductor device which includes spaced drift regions each extending from the bottom of a respective gate trench to the substrate of the device.
48	7488650	Method of forming trench-gate electrode for FinFET device A FinFET device having a trench-gate electrode, and a method of manufacture, is provided. The trench-gate electrode may be fabricated by forming a mask layer on a substrate having a semiconductor...
49	7488651	Method of making vertical transistor structures having vertical-surrounding-gates with self-aligned features The present inventions include a vertical transistor formed by defining a channel length of the vertical-surrounding-gate field effect transistor with self-aligning features. The method provides...
50	7479678	Semiconductor element and method of manufacturing the same A semiconductor element is provided, comprising a first semiconductor layer of the first conduction type; and a pillar layer including first semiconductor pillars of the first conduction type and...

Matches 1 - 50 out of 580

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