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7615821 Charge trap memory with avalanche generation inducing layer  
The present invention discloses a charge trap flash memory cell with multi-doped layers at the active region, a memory array using of the memory cell, and an operating method of the same. The...
7615438 Lanthanide yttrium aluminum oxide dielectric films  
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The...
7612403 Low power non-volatile memory and gate stack  
Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells...
7608886 Systems and methods for a high density, compact memory array  
A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory...
7608883 Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric  
A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain...
7608882 Split-gate non-volatile memory  
A split-gate non-volatile memory cell is described, including a substrate, a charge-trapping layer on the substrate, a split gate on the charge-trapping layer, and a source/drain in the substrate...
7605422 Semiconductor device  
A semiconductor device capable of realizing low-voltage drivability and large storage capacity (miniaturization) by achieving large threshold voltage shifts and long retention time while at the...
7602026 Memory cell, semiconductor memory device, and method of manufacturing the same  
A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and...
7602012 Semiconductor memory devices with charge traps  
A memory cell in a semiconductor memory device has a pair of charge traps formed on opposite sides of a control electrode, above variable resistance regions in the semiconductor substrate. Each...
7602011 Semiconductor memory device having charge storage layer and method of manufacturing the same  
The semiconductor memory device according to the present invention includes a charge storage layer 26 formed over a semiconductor substrate 10 and including a plurality of particles 16 as...
7602010 Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same  
In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a...
7602009 Erasable non-volatile memory device using hole trapping in high-K dielectrics  
A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control gate and a channel region of a...
7598575 Semiconductor die with reduced RF attenuation  
The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly...
7592666 Semiconductor memory  
A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer...
7586159 Semiconductor devices having different gate dielectrics and methods for manufacturing the same  
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate...
7586145 EEPROM flash memory device with jagged edge floating gate  
An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
7586137 Non-volatile memory device and method of fabricating the same  
A non-volatile memory device having an asymmetric channel structure is provided. The non-volatile memory device includes a semiconductor substrate, a source region and a drain region which are...
7585724 FLASH memory device and method of manufacture  
A FLASH memory device is provided including a plurality of first floating gates formed over a gate oxide layer formed over a substrate, the first group of floating gates being formed using a...
7579647 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration  
First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor...
7579242 High performance multi-level non-volatile memory device  
Non-volatile memory devices and arrays are described that utilize band engineered gate-stacks and multiple charge trapping layers allowing a multiple trapping site gate-insulator stack memory cell...
7576386 Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer  
A non-volatile memory (NVM) cell includes a silicon substrate having a main surface, a source region in a portion of the silicon substrate, a drain region in a portion of the silicon substrate, and...
7576385 Method for improving erase saturation in non-volatile memory devices and devices obtained thereof  
Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the...
7573094 Random number generating element  
Random number generating element comprises source region, drain region, semiconductor channel provided between source region and drain region and having portion of width W and length L, width W and...
7573091 Semiconductor device and method of manufacturing the same  
The present invention relates to a semiconductor device that includes a semiconductor substrate ( 10 ) having source/drain diffusion regions ( 14 ) formed therein and control gates ( 20 ) formed...
7569882 Non-volatile multibit memory cell and method of manufacturing thereof  
One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second...
7564094 Non-volatile memory devices and methods of manufacturing the same  
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern...
7560394 Nanodots formed on silicon oxide and method of manufacturing the same  
A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality...
7557404 Nonvolatile memory devices and methods of forming the same  
In a nonvolatile memory device and a method of fabricating the same, the nonvolatile memory device may include a semiconductor substrate having a device isolation layer defining an active region, a...
7550802 Nonvolatile semiconductor memory device and manufacturing process of the same  
A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an...
7550800 Method and apparatus transporting charges in semiconductor device and semiconductor memory device  
A conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function,...
7547942 Nonvolatile memory devices and methods of fabricating the same  
A nonvolatile memory device includes a semiconductor substrate including a cell region and a peripheral circuit region, a cell gate on the cell region, and a peripheral circuit gate on the...
7547601 Low power electrically alterable nonvolatile memory cells and arrays  
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first...
7544993 Semiconductor storage device and portable electronic equipment  
A semiconductor storage device has memory function bodies ( 261, 262 ) having a function to retain electric charges, which are formed on opposite sides of a single gate electrode ( 217 ) provided...
7541639 Memory device and method of fabricating the same  
A memory device and a method of fabricating the same. The memory device includes a substrate and a first gate electrode overlying the substrate. Overlying a top surface of the first gate electrode,...
7541242 NROM memory cell, memory array, related devices and methods  
An array of memory cells configured to store at least one bit per one F 2 includes substantially vertical structures providing an electronic memory function spaced apart a distance equal to one...
7538385 Memory device and fabrication method thereof  
A method of forming a memory device, where a first insulator layer and a charge trapping layer may be formed on a substrate, and at least one of the first insulator layer and charge trapping layer...
7538384 Non-volatile memory array structure  
A memory array having a smaller active area pitch is provided. In accordance with embodiments of the present invention, active regions are formed in a substrate and transistors are formed between...
7535060 Charge storage structure formation in transistor with vertical channel region  
A semiconductor device includes a semiconductor structure having a first sidewall. A vertical channel region is formed in the semiconductor structure along the first sidewall between a first...
7535054 Trench corner effect bidirectional flash memory cell  
A non-volatile memory cell structure that is capable of holding two data bits. The structure includes a trench in a substrate with two sides of the trench being lined with a trapping material. The...
7535051 Memory device and method of manufacturing the same  
A example embodiment may provide a memory device that may include an active pattern on a semiconductor substrate, a first charge trapping layer pattern on the active pattern, a first gate electrode...
7531870 SONOS memory device having nano-sized trap elements  
A silicon-oxide-nitride-oxide-silicon (SONOS) memory device includes a memory type transistor including a gate with a SONOS structure on a semiconductor substrate. The gate is formed by...
7531869 Lanthanum aluminum oxynitride dielectric films  
Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum...
7531868 Non-volatile semiconductor memory device  
In a non-volatile semiconductor memory device typically of a MONOS type storing data by trapping charge in a multilayer film composed of a plurality of insulating films, which includes: source and...
7531867 Method for forming an integrated memory device and memory device  
The invention in one of the embodiments refers to a method for forming an integrated memory device, the method including a forming a plurality of bitlines, wherein forming the plurality of bitlines...
7531866 Non-volatile semiconductor memory device, drive method and manufacturing method  
A MONOS type non-volatile semiconductor memory device has a memory cell array. The memory cell array includes a plurality of pairs of bit line and control line. These bit line-control line pairs...
7531411 Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer  
A non-volatile memory structure comprises a trapping layer that includes a plurality of silicon-rich, silicon nitride layers. Each of the plurality of silicon-rich, silicon nitride layers can trap...
7525149 Combined volatile and non-volatile memory device with graded composition insulator stack  
A memory device is fabricated with a graded composition tunnel insulator layer. This layer is formed over a substrate with a drain and a source region. The tunnel insulator is comprised of a graded...
7521751 Nonvolatile memory device  
To provide a nonvolatile memory device suppressing a reduction of a data retention characteristic even if charges injected and stored into a local area of a nitride film is redistributed to achieve...
7518181 Semiconductor memory device and methods of manufacturing and operating the same  
A semiconductor memory device and methods of manufacturing and operating the same may be provided. The semiconductor memory device may include a substrate, at least a pair of fins protruding from...
7514744 Semiconductor device including carrier accumulation layers  
A semiconductor device includes a gate structure on a channel region of a semiconductor substrate adjacent to a source/drain region therein and a surface insulation layer directly on the...
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