Matches 151 - 200 out of 716 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
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7317222 Memory cell using a dielectric having non-uniform thickness  
A memory cell is programmed by injecting charge into a charge storage layer of the memory cell. A desired programmed charge results in the charge storage layer over an edge portion of a channel...
7317639 Two-bit charge trap nonvolatile memory device and methods of operating and fabricating the same  
Two-bit programmable nonvolatile memory devices and methods of operating and fabricating the same are provided. The device comprises a plurality of device isolation layers, a plurality of word...
7315059 Semiconductor memory device and manufacturing method for the same  
The present invention provides a semiconductor memory device having one or more protruding semiconductor layers formed on a semiconductor substrate of a first conductivity type and a plurality of...
7315060 Semiconductor storage device, manufacturing method therefor and portable electronic equipment  
A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the...
7312491 Charge trapping semiconductor memory element with improved trapping dielectric  
A semiconductor memory element, which can be controlled via field effect, includes a semiconductor substrate of a first conduction type, a first doping region of a second conduction type provided...
7307307 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration  
First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor...
7307879 Nonvolatile memory device, and its manufacturing method  
On a channel region enclosed by a pair of diffusion layers 13 A, 13 B, a first insulating layer 15 , a charge accumulative layer 17 , and a second insulating layer 19 are stacked up in this...
7301198 Semiconductor device having logic circuitry and memory circuitry on the same substrate, and its use in portable electronic equipment and IC card  
A semiconductor switching element and a semiconductor storage element each have a gate electrode, a pair of source/drain regions and a channel forming region. Memory function bodies having a...
7294880 Semiconductor non-volatile memory cell with a plurality of charge storage regions  
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further...
7294541 Method of fabricating gate dielectric layer and method of fabricating semiconductor device  
A method of fabricating a gate dielectric layer is described. First, a well is produced in a substrate. Later, the substrate is cleaned. Then the substrate is processed by a pre-annealed process....
7285819 Nonvolatile storage array with continuous control gate employing hot carrier injection programming  
An array of storage cells include a first source/drain region underlying a first trench defined in a semiconductor substrate and a second source/drain region underlying a second trench in the...
7285820 Flash memory device using semiconductor fin and method thereof  
A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device...
7282762 4F2 EEPROM NROM memory arrays with vertical devices  
NROM EEPROM memory devices and arrays are described that facilitate the use of vertical NROM memory cells and select gates in NOR or NAND high density memory architectures. Memory embodiments of...
7279740 Band-engineered multi-gated non-volatile memory device with enhanced attributes  
Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in floating gate memory cells in NOR or NAND memory...
7276761 Semiconductor memory device having insulating film of varying thickness over bit lines  
A semiconductor memory device of the invention comprises a plurality of bit lines formed by implanting a second conductive-type impurity in a first conductive-type semiconductor substrate; a thick...
7274067 Service programmable logic arrays with low tunnel barrier interpoly insulators  
Structures and methods for in service programmable logic arrays with low tunnel barrier interpoly insulators are provided. The in-service programmable logic array includes a first logic and a...
7274068 Ballistic direct injection NROM cell on strained silicon structures  
A nitride read only memory cell comprising a silicon-germanium layer with a pair of source/drain regions. A strained silicon layer is formed overlying the silicon-germanium layer such that the pair...
7271437 Non-volatile memory with hole trapping barrier  
A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control gate and a channel region of a...
7268388 One-transistor composite-gate memory  
One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control...
7268389 Nonvolatile semiconductor memory  
A nonvolatile semiconductor memory device includes diffusion layers formed in a semiconductor substrate, a gate insulating film formed on at least a portion of a channel region between the...
7268385 Semiconductor memory device  
A semiconductor memory device comprises diffusion regions, a floating gate, a third diffusion region, a selection gate electrode, and a control gate electrode that three-dimensionally crosses the...
7265408 Nonvolatile semiconductor memory with stable characteristic  
A nonvolatile semiconductor memory device includes a substrate of a first conductive type, a plurality of stripe-shaped STI (shallow Trench Isolation) films, a plurality of control gates as word...
7265413 Semiconductor memory with vertical memory transistors and method for fabricating it  
The invention relates to a semiconductor memory having a multiplicity of memory cells and a method for forming the memory cells. The semiconductor memory generally includes a semiconductor layer...
7262458 Semiconductor memory device and portable electronic apparatus  
A semiconductor memory device includes: a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed under the gate electrode; diffusion regions disposed...
7259432 Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device  
A semiconductor device includes: a gate electrode formed on a substrate; impurity regions formed in the substrate and to both sides of the gate electrode; a first interlayer insulating film formed...
7259411 Vertical MOS transistor  
A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain...
7250654 Non-volatile memory device  
A single-poly non-volatile memory device invented to integrate into logic process is disclosed. This non-volatile memory device includes a memory cell unit comprising a PMOS access transistor that...
7244986 Two-bit cell semiconductor memory device  
A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second...
7242613 Nonvolatile semiconductor memory device  
The nonvolatile semiconductor memory device of this invention has a trench region in a semiconductor substrate and has a NAND type memory cell unit in three dimensions in both sides of a side wall...
7242055 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide  
A semiconductor structure is provided that includes a V t stabilization layer between a gate dielectric and a gate electrode. The V t stabilization layer is capable of stabilizing the structure's...
7238984 Semiconductor memory device, semiconductor device, and portable electronic apparatus  
A semiconductor memory device includes a nonvolatile memory section; and a volatile memory section, wherein the nonvolatile memory section includes a nonvolatile memory cell having a gate electrode...
7227210 Ferroelectric memory transistor with highly-oriented film on gate insulator  
A method for fabricating a non-volatile memory device. The method includes providing a substrate, e.g., silicon. The method also includes forming an oxide layer overlying the substrate; and forming...
7227220 Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines  
A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity...
7227219 Charge trapping memory cell and fabrication method  
A memory cell patterned as a trench transistor is provided with a first gate electrode ( 4 ) as auxiliary gate for source-side injection and a second gate electrode ( 5 ) electrically insulated...
7227221 Multiple bit chalcogenide storage device  
Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide...
7223641 Semiconductor device, method for manufacturing the same, liquid crystal television and EL television  
A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step...
7221017 Memory utilizing oxide-conductor nanolaminates  
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a...
7217607 Method for manufacturing semiconductor integrated circuit device  
In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface...
7214983 Non-volatile memory and fabricating method thereof  
A method of fabricating a non-volatile memory is provided. A plurality of stack gate strips is formed on a substrate and a plurality of source/drain regions is formed in the substrate beside the...
7211858 Split gate storage device including a horizontal first gate and a vertical second gate in a trench  
A split gate memory cell can include a first gate electrode and a second gate electrode. The split gate memory cell can also include a first diffusion region underlying a trench in a semiconductor...
7208794 High-density NROM-FINFET  
Semiconductor memory having memory cells, each including first and second conductively-doped contact regions and a channel region arranged between the latter, formed in a web-like rib made of...
7199421 Sonos device and methods of manufacturing the same  
Silicon-oxide-nitride-oxide-silicon (SONOS) devices and methods of manufacturing the same are provided. According to one aspect, a SONOS device includes a semiconductor substrate having a first...
7192830 Method for fabricating a memory cell  
Silicon nanocrystals are applied as storage layer ( 6 ) and removed using spacer elements ( 11 ) laterally with respect to the gate electrode ( 5 ). By means of an implantation of dopant,...
7190024 Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method  
In a method for forming a semiconductor device and a semiconductor device formed in accordance with the method, a thin dielectric layer is provided between a lower conductive layer and an upper...
7187030 SONOS memory device  
A SONOS memory device, and a method of erasing data from the same, includes injecting charge carriers of a second sign into a trapping film, which traps charge carriers of a first sign to store...
7187043 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body  
A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon...
7186621 Method of forming a negative differential resistance device  
A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a...
7183608 Memory array including isolation between memory cell and dummy cell portions  
A semiconductor memory device structure includes an isolation region formed along an edge of a memory cell portion adjacent to a dummy cell portion to isolate the memory cell portion from leakage...
7180129 Semiconductor device including insulating layer  
A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an...
7173296 Reduced hydrogen sidewall spacer oxide  
An embodiment of the invention is a method of making a semiconductor structure 10 where the spacer oxide layer 90 is formed by a hydrogen free precursor CVD process. Another embodiment of the...
Matches 151 - 200 out of 716 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >