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5968844 Method for etching nitride features in integrated circuit construction  
A process for etching nitride layers in three steps is disclosed. The process comprises selecting a process chemistry of CF 4 to CHF 3 to set a predetermined critical dimension bias; conducting a...
5952702 High performance MOSFET structure having asymmetrical spacer formation and having source and drain regions with different doping concentration  
A method of fabricating a field effect transistor (FET) having an asymmetrical spacer formation includes the steps of forming a gate oxide and a gate electrode on a semiconductor material of a...
5952692 Memory device with improved charge storage barrier structure  
A memory device includes a memory node (1) to which charge is written through a tunnel barrier configuration (2) from a control electrode (9). The stored charge effects the conductivity of a...
5936283 MOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layer  
According to the present invention, a MOSFET for an input/output protective circuit in which a source diffusion layer, a drain diffusion layer and a gate electrode are formed on a semiconductor...
5929479 Floating gate type non-volatile semiconductor memory for storing multi-value information  
A non-volatile semiconductor memory cell comprises a diffused layer or silicide layer formed in a surface of semiconductor substrate within an opening of an insulating layer formed on the...
5925908 Integrated circuit including a non-volatile memory device and a semiconductor device  
An integrated circuit (10) is formed on a semiconductor substrate (20) and includes a non-volatile memory device (12) and a semiconductor device (11). The non-volatile memory device (12) includes a...
5923063 Double density V nonvolatile memory cell  
Floating gates of nonvolatile memory cells are formed in pairs within a pyramidal or truncated pyramidal opening in a semiconductor layer between a top surface thereof and a heavily doped source...
5917751 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a memory cell array in which memory cells constituted by semiconductor storage elements are divided into a plurality of memory cell blocks each...
5889302 Multilayer floating gate field effect transistor structure for use in integrated circuit devices  
A floating gate field effect transistor (FET) is provided on a semiconductor-on-insulator (SOI) or silicon-on-insulator structure. The silicon substrate is etched to form stepped structures upon...
5889305 Non-volatile semiconductor memory device having storage cell array and peripheral circuit  
In a non-volatile semiconductor memory device having a storage cell array and a peripheral circuit, the thickness of a gate oxide layer of the peripheral circuit area is independent of the...
5874761 Semiconductor memory device with three-dimensional cluster distribution  
A method of producing a semiconductor memory device forms an overlap between a distribution of semiconductor clusters in a gate insulating layer and a drain region by oblique ion implantation using...
5874759 Flash memory cell and method of fabricating the same  
A flash memory cell includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region having first and second channel region between the source and drain...
5872378 Dual thin oxide ESD network for nonvolatile memory applications  
An Electric Static Discharge (ESD) protection network for nonvolatile memory using a high voltage dual thin oxide MOSFET. In one aspect, there is a dual oxide electric static discharge (ESD)...
5861650 Semiconductor device comprising an FPGA  
The semiconductor device includes a silicon substrate, field effect transistors, a flash memory and a separating portion. A plurality of field effect transistors are formed on semiconductor...
5859454 Nonvolatile memory device  
A nonvolatile memory device includes a floating gate for storing a charge carrier during programming, a program gate coupled to the floating gate and performing programming by injecting the charge...
5847427 Non-volatile semiconductor memory device utilizing an oxidation suppressing substance to prevent the formation of bird's breaks  
A non-volatile semiconductor memory device is provided that includes a semiconductor substrate having a first conductivity type, and diffusion regions having a second conductivity type formed in...
5841162 Non-volatile semiconductor memory with floating gate and control gate and fabrication process therefor  
An oxide layer is formed with covering the surface of floating gates and the surface of a substrate. Control gates are formed on the oxide layer only at the portion aligning to the upper surface...
5838041 Nonvolatile semiconductor memory device having memory cell transistor provided with offset region acting as a charge carrier injecting region  
The present invention discloses a nonvolatile semiconductor memory device having a memory cell transistor in which an offset region is provided as a charge carrier injecting region. An insulating...
5838048 Semiconductor Bi-MIS device  
A silicon oxide film and a polysilicon film are formed on a silicon substrate and are selectively etched to form a contact hole in a region where an emitter is to be formed. A polysilicon film is...
5801415 Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors  
A method for making an improved Electrically Programmable Read-Only-Memory (EPROM) device having non-volatile memory cells with enhanced capacitive coupling was achieved. The array of memory cells...
5793079 Single transistor non-volatile electrically alterable semiconductor memory device  
An electrically alterable semiconductor memory device having an array of memory cells formed by individual transistors. The structure of the memory cells is compact and facilitates high density...
5789776 Single poly memory cell and array  
A non-volatile memory cell array using only a single level of polysilicon and a single level of metal has programmable single transistor memory cells on a semiconductor substrate of a first...
5783849 Semiconductor device  
On a semiconductor substrate (1) is provided an insulator film, on which is formed a lower gate electrode including a first lower gate electrode (5a) and a second lower gate electrode (5b), on...
5777358 Stacked capacitor semiconductor memory device and method for fabricating the same  
A novel structure of a semiconductor memory device on a silicon substrate comprising: a first area on which stacked capacitor memory cells comprising top and bottom electrodes sandwiching a...
5773857 Semiconductor device having dummy wiring conductors for suppressing heat-treatment-induced shifting  
In a semiconductor device having a repetitive pattern area in which a unitary wiring pattern is repeatedly arranged and covered with a multilayer insulator film composed of a silicon oxide film and...
5760438 High speed flash memory cell structure and method  
A fast, fieldless flash memory cell includes an erase node having a control gate and a floating gate, both formed of polycrystalline silicon, a program transistor sharing the floating gate and...
5729035 Non-volatile semiconductor device with multi-layered capacitor insulating film  
A structure and a manufacturing method of a semiconductor device which prevents leakage of electric charges from a floating gate electrode to outside. The semiconductor device includes a capacitor...
5693961 Top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen  
In a top-gate type thin film transistor including a polycrystalline silicon pattern having a channel region, a source region and a drain region on a substrate, a gate electrode via a gate...
5691552 Nonvolatile semiconductor memory formed with silicon-on-insulator structure  
The invention provides an electrically erasable and programmable nonvolatile memory having a plurality of memory cells (M1 to M8) connected in series to each other to form a NAND type flash memory...
5675162 EPROM, flash memory with high coupling ratio  
A semiconductor device is formed on a substrate lightly doped with a dopant, a source region and a drain region in the substrate on the surface thereof, a dielectric layer deposited upon the...
5654568 Semiconductor device including nonvolatile memories  
The present invention provides a nonvolatile semiconductor memory which has advantages permitting the cell of the memory circuit to integrate, the memory circuit to be easy to manufacture, and the...
5640345 Semiconductor memory device and fabrication process  
Provided between a control gate electrode and a channel region of the EEPROM memory cell is a capacitor. Formed on the channel region are a first gate dielectric layer of silicon oxide, a first...
5640032 Non-volatile semiconductor memory device with improved rewrite speed  
A non-volatile semiconductor memory device comprises a semiconductor substrate, a shield gate electrode formed over a device isolation region of the semiconductor substrate through a shield gate...
5637897 Nonvolatile semiconductor memory device with dual insulation layers between adjacent gate structures  
A non-volatile semiconductor memory, called EPROM has a plurality of memory cells arrayed in a matrix and each having a laminate gate structure including a part of a strip control gate and a...
5633519 Non-volatile floating gate semiconductor device  
A MOS type semiconductor device comprising a protruded part provided on a semiconductor substrate, a semiconductor film formed on the side surface thereof, which is defined as a floating gate, and...
5625208 Method for using a charge injection transistor  
A charge or carrier injection transistor including a substrate, a gate electrode and an electric potential barrier layer forming an electric potential barrier against charges (either holes or...
5619052 Interpoly dielectric structure in EEPROM device  
A dielectric insulating composite for insulating a floating gate from a control gate in a nonvolatile memory cell such as EPROM, EEPROM and flash EPROM cells is provided which includes a bottom...
5619051 Semiconductor nonvolatile memory cell  
In a floating-gate type nonvolatile memory cell, the second dielectric film between the floating gate and the control gate is made very higher in relative permittivity than the first dielectric...
5614748 Nonvolatile memory device and process for production of the same  
A nonvolatile memory device having a control gate laid over a floating gate via an interlayer insulating layer, wherein the side portions of the floating gate and the control gate have a side wall...
5614747 Method for manufacturing a flash EEPROM cell  
The present invention discloses a split gate type flash EEPROM cell and a method of manufacturing the same which can prevent over-erasure of the flash EEPROM cell and decrease the cell area by...
5612555 Full frame solid-state image sensor with altered accumulation potential and method for forming same  
In accordance with the invention, a full frame solid-state image sensor of altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a...
5604357 Semiconductor nonvolatile memory with resonance tunneling  
A semiconductor device comprising a substrate having thereon a capacitance part and an electrode, the capacitance part having two storage regions for conductive carriers, the storage regions having...
5604367 Compact EEPROM memory cell having a floating gate transistor with a multilayer gate electrode  
A method of forming an EEPROM memory cell on a semiconductor substrate, comprises forming a first dielectric layer on the substrate, a gate electrode of a select transistor and a first layer of a...
5600166 EPROM cell with a readily scalable interpoly dielectric  
The use of an O--N--RTN (Oxide-Nitride-Rapid Thermal Nitrided Polysilicon) interpoly dielectric multilayer instead of a customary O--N--O (Oxide-Nitride-Oxide) multilayer in the floating gate...
5596214 Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricating the same  
There is provided a metal-insulator-semiconductor gate insulating structure involved in a non-volatile memory device. A first insulating layer formed on the semiconductor substrate has a first...
5592002 Non-volatile semiconductor memory device having reduced current consumption  
In a non-volatile semiconductor memory device, an n-type impurity diffusion layer constituting source and drain regions is formed on the surface area of a p-type silicon substrate, and then a first...
5568422 Flash memory having a side wall immediately adjacent the side of a gate electrode as a mask to effect the etching of a substrate  
Flash memories are produced by a novel production method according to the invention, the method comprising removing field insulation films by an etching process using side walls provided adjacent...
5561319 Integrated circuit structure including CMOS devices protected by patterned nitride passivation and method for the fabrication thereof  
A CMOS integrated circuit structure is disclosed having a patterned nitride passivation layer, wherein the nitride is patterned such that it does not overlie the thin gate oxide portions of one or...
5559351 Semiconductor element having Cr in silicon dioxide  
A semiconductor element including a silicon substrate, a silicon oxide film formed on the silicon substrate, and a top electrode formed on the silicon oxide film, wherein chromium is included only...
5557122 Semiconductor electrode having improved grain structure and oxide growth properties  
The use of nitrogen doped amorphous silicon as an electrode material for a semiconductor integrated circuit is described. A preferred embodiment is a single transistor flash EPROM cell is disclosed...
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