Patents in Class 257/321

Matches 1 - 50 out of 817

Match	Document	Document Title
1	7619277	Flash memory with a trench common source line A flash memory includes substrate, control gates, trenches, source regions, isolation structures, drain regions, a common source line, floating gates, tunneling dielectric layers, and dielectric...
2	7618894	Multi-step selective etching for cross-point memory Multi-step selective etching. Etching an unmasked region associated with each layer of a plurality of layers, the plurality of layers comprising a stack, wherein the unmasked region of each of the...
3	7617591	Method for fabricating embedded thin film resistors of printed circuit board A method for fabricating the embedded thin film resistors of a printed circuit board is provided. The embedded thin film resistors are formed using a resistor layer built in the printed circuit...
4	7612404	Semiconductor device A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode,...
5	7608883	Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain...
6	7602008	Split gate non-volatile memory devices and methods of forming the same Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7	7595528	Nano-enabled memory devices and anisotropic charge carrying arrays Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate,...
8	7592665	Non-volatile memory devices having floating gates A nonvolatile memory device may include a substrate having a cell region, and a cell device isolation layer on the cell region of the substrate to define a cell active region. A floating gate may...
9	7589387	SONOS type two-bit FinFET flash memory cell A 2-bit FinFET flash memory cell capable of storing 2 bits and a method of forming the same are provided. The memory cell includes a semiconductor fin on a top surface of a substrate, a gate...
10	7589376	Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation...
11	7589373	Semiconductor device The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
12	7586145	EEPROM flash memory device with jagged edge floating gate An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
13	7582930	Non-volatile memory and method for manufacturing non-volatile memory A coupling oxide film is formed on a silicon substrate, a polysilicon film is further formed thereupon, and a low-temperature oxide film is deposited to a thickness of 10 nm, for example. Next, a...
14	7582928	Nonvolatile semiconductor memory device and its manufacturing method A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
15	7576385	Method for improving erase saturation in non-volatile memory devices and devices obtained thereof Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the...
16	7573095	Memory cells with improved program/erase windows A semiconductor structure includes a memory cell in a first region and a logic MOS device in a second region of a semiconductor substrate. The memory cell includes a first gate electrode over the...
17	7573093	Non-volatile two-transistor programmable logic cell and array layout A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
18	7573091	Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device that includes a semiconductor substrate ( 10 ) having source/drain diffusion regions ( 14 ) formed therein and control gates ( 20 ) formed...
19	7573089	Non-volatile memory device Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
20	7569882	Non-volatile multibit memory cell and method of manufacturing thereof One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second...
21	7566930	Nonvolatile memory device and method for fabricating the same A nonvolatile (e.g., flash) memory device includes a substrate having a plurality of isolation areas and active areas; a trench formed on the isolation area; a first electrode layer formed on an...
22	7566927	Flash memory device A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line...
23	7560769	Non-volatile memory cell device and methods A method of fabricating a memory cell including forming nanodots over a first dielectric layer and forming a second dielectric layer over the nanodots, where the second dielectric layer encases the...
24	7560394	Nanodots formed on silicon oxide and method of manufacturing the same A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality...
25	7558119	Operating method of P-channel non-volatile memory A P-channel non-volatile memory is described. The P-channel non-volatile memory includes a substrate, a first memory cell, and second memory cell. An N-well is disposed over the substrate, and the...
26	7550800	Method and apparatus transporting charges in semiconductor device and semiconductor memory device A conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function,...
27	7544991	Non-volatile memory device and methods of manufacturing and operating the same A non-volatile memory device and methods of manufacturing and operating the same are provided. In a method of manufacturing a non-volatile memory device, a substrate having a stepped portion that...
28	7538376	Semiconductor integrated circuit device including a semiconductor device having a stable threshold characteristic A semiconductor integrated circuit device includes a substrate, a nonvolatile memory device formed in a memory cell region of the substrate, and a semiconductor device formed in a device region of...
29	7531411	Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer A non-volatile memory structure comprises a trapping layer that includes a plurality of silicon-rich, silicon nitride layers. Each of the plurality of silicon-rich, silicon nitride layers can trap...
30	7528438	Non-volatile memory including assist gate A non-volatile memory is provided. An assist gate structure is formed on a substrate such that the width at the bottom of the assist gate structure is greater than the width at the top of the...
31	7525148	Nonvolatile memory device A nonvolatile memory device and a method of manufacturing the same are provided. An insulation layer having a high etching rate as compared with a pad oxide layer is formed as a buffer layer...
32	7521764	One-time programmable memory device A one-time programmable, dual-bit memory device comprises one MOS storage transistor having a semiconductor substrate, first and second active regions formed under the surface of the substrate...
33	7518180	Nonvolatile semiconductor memory device and method for fabricating the same A nonvolatile semiconductor memory device includes: a gate dielectric made of a multilayer dielectric that is formed on a substrate and discretely accumulates charges; a gate electrode formed on...
34	7518179	Virtual ground memory array and method therefor A virtual ground memory array (VGA) is formed by a storage layer over a substrate with a conductive layer over the storage layer. The conductive layer is opened according to a patterned photoresist...
35	7514744	Semiconductor device including carrier accumulation layers A semiconductor device includes a gate structure on a channel region of a semiconductor substrate adjacent to a source/drain region therein and a surface insulation layer directly on the...
36	7511334	Twin-ONO-type SONOS memory A twin-ONO-type SONOS memory includes a semiconductor substrate having a source region, a drain region and a channel region between the source and drain regions, twin silicon oxide-silicon...
37	7508050	Negative differential resistance diode and SRAM utilizing such device A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium...
38	7504663	Semiconductor device with a floating gate electrode that includes a plurality of particles The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor...
39	7501682	Nonvolatile memory device, method of fabricating the same, and organic lighting emitting diode display device including the same A nonvolatile memory device may include a substrate, a semiconductor layer on the substrate, and including a source region, a drain region having a relatively shallower impurity injection region...
40	7498632	Saddle type flash memory device and fabrication method thereof The present invention relates to a nano-scale flash memory device having a saddle structure, and a fabrication method thereof. Particularly, the invention relates to a highly integrated,...
41	7498631	Sensing memory device A sensing memory device disposed on a substrate is provided, which includes a first conductive layer, a second conductive layer and a charge trapping layer. The second conductive layer covers the...
42	7492002	Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select...
43	7492001	High K stack for non-volatile memory A memory device may include a source region and a drain region formed in a substrate and a channel region formed in the substrate between the source and drain regions. The memory device may further...
44	7485526	Floating-gate structure with dielectric component Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive...
45	7482653	Non-volatile memory with carbon nanotubes Floating-gate memory cells having carbon nanotubes interposed between the substrate and the tunnel dielectric layer facilitate ballistic injection of charge into the floating gate. The carbon...
46	7482651	Enhanced multi-bit non-volatile memory device with resonant tunnel barrier A non-volatile memory cell uses a resonant tunnel barrier that has an amorphous silicon and/or amorphous germanium layer between two layers of either HfSiON or LaAlO 3 . A charge trapping layer is...
47	7482619	Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the...
48	7473961	Non-volatile memory device and method of fabricating the same A non-volatile memory device having improved electrical characteristics and a method of fabricating the non-volatile memory device are provided. The non-volatile memory device includes a gate...
49	7470949	Bidirectional nonvolatile memory cell having charge trapping layer in trench and an array of such memory cells, and method of manufacturing A nonvolatile memory cell has a charge trapping layer for the storage of charges thereon. The cell is a bidirectional cell in a substrate of a first conductivity. The cell has two spaced apart...
50	7470947	Semiconductor memory and fabrication method for the same A semiconductor memory includes memory cell transistors comprising a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide...

Matches 1 - 50 out of 817

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