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Document Title |
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7579699 |
Systems and methods for performing quantum computations
Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles...
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7566896 |
Lattice platforms for performing quantum computations
Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles...
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7544964 |
Method for fabricating thin layer device
A method for producing a thin layer device such as a superconductive device excellent in mechanical strength and useful as a submillimeter band receiver is provided. The thin layer device is...
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7525202 |
Quantum computational systems
Apparatus and methods for performing quantum computations are disclosed. Such quantum computational systems may include quantum computers, quantum cryptography systems, quantum information...
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7474010 |
Systems and methods for performing quantum computations
Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles...
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7342266 |
Field effect transistors with dielectric source drain halo regions and reduced miller capacitance
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device...
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7332738 |
Quantum phase-charge coupled device
A method for reading out the state of a mesoscopic phase device. In the method the mesoscopic phase device is coherently coupled to a mesoscopic charge device using a phase shift device and the...
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7253069 |
Method for manufacturing silicon-on-insulator wafer
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a...
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7224019 |
Semiconductor device and method of manufacture thereof
A semiconductor device comprises a semiconductor substrate, an electrically rewritable semiconductor memory cell provided on the semiconductor substrate, the memory cell comprising an island...
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7176483 |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently...
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7105853 |
Self-aligned junction passivation for superconductor integrated circuit
A superconductor integrated circuit ( 1 ) includes an anodization ring ( 35 ) disposed around a perimeter of a tunnel junction region ( 27 ) for preventing a short-circuit between an outside...
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7105852 |
High speed electron tunneling devices
A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form...
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7002174 |
Characterization and measurement of superconducting structures
A structure comprising a tank circuit inductively coupled to a flux qubit or a phase qubit. In some embodiments, a low temperature preamplifier is in electrical communication with the tank circuit....
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6999806 |
High temperature superconducting josephson junctin, superconducting electronic device provided with the former and method of manufacturing high temperature superconducting josephson junction
A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er,...
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6987282 |
Quantum bit with a multi-terminal junction and loop with a phase shift
A solid-state quantum computing qubit includes a multi-terminal junction coupled to a superconducting loop where the superconducting loop introduces a phase shift to the superconducting order...
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6790675 |
Josephson device and fabrication process thereof
A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein...
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6777808 |
Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits
The self inductance associated with a capacitance A 52 in a superconductor integrated circuit (FIG. 1 ) is reduced by adding a layer of superconductor metal (A 54 ) overlying the capacitor,...
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6750473 |
Transistor design for use in the construction of an electronically driven display
A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One...
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6649929 |
Quantum computing with d-wave superconductors
A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The...
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6429494 |
Semiconductor read-only memory and method of manufacturing the same
A semiconductor read-only memory (ROM) has trenches and vertical transistors. The trenches are filled with insulator material during the manufacturing process. Holes, which are as wide as the...
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6426539 |
Bolometric detector with intermediate electrical insulation and manufacturing process for this detector
Bolometric detector with intermediate electrical insulation and manufacturing process for this detector. According to the invention, at least two electrodes are formed facing the same face of a...
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6365912 |
Superconducting tunnel junction device
A superconductive tunnel junction device in which quasiparticles in a superconductive region (S 1 ), relax into a normal metal trap (N 1 ) releasing their potential energy in electron-electron...
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6353234 |
Layered arrangement and component containing the latter
The invention concerns a layered arrangement comprising at least one layer based on a high-temperature superconductive material with at least one unit cell having a CuO 2 plane, the layer being...
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6348699 |
Josephson junction array device, and manufacture thereof
A superconductive device is disclosed, which has specific characteristics of a generator and/or detector of sub-millimeter wave length radiation, comprising a two-dimensional lateral array of mesas...
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6274412 |
Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays
A process sequence is disclosed for fabricating arrays of Thin Film Transistors by printing metallic conductors for the gate and data lines and possibly the Indium Tin Oxide Pixel electrode as...
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6121630 |
Superconducting thin film and a method for preparing the same
A high-temperature superconducting thin film of compound oxide selected from the group consisting of: Y 1 Ba 2 Cu 3 O 7 -x, Ho 1 Ba 2 Cu 3 O 7 -x, Lu 1 Ba 2 Cu 3 O 7 -x, Sm 1 Ba 2 ...
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6088604 |
Superconductor-normal conductor junction device
A superconductor-normal conductor junction device comprises first and second regions (1, 3) of normal material forming first and second junctions with a superconducting material (2), the Fermi...
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6084246 |
A.sub.4 MeSb.sub.3 O.sub.12 substrates and dielectric/buffer layers for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures
Compounds of the general formula A 4 MeSb 3 O 12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na)...
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6023072 |
Superconductor hetero-epitaxial josephson junction
A Josephson junction having a laminar structure which includes a substrate, a first superconductive layer deposited on the substrate, a non-superconductive layer deposited on the first...
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5982034 |
Conductive oxide films
Thin films of isotropically conductive material are formed from Sr 1 -x Ca x RuO 3 . This material is easily deposited as a thin film by methods such as 90° off-axis sputtering and laser...
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5965900 |
Tunnel-effect superconductive detector cell
The invention relates to a detector cell comprising tunnel-effect superconductive devices organized in a two-dimensional array and placed on a common substrate, each superconductive device...
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5962866 |
Microbridge superconductor device utilizing stepped junctions
A superconductor device has a substrate with an inclined surface that divides the substrate surface into a lower planar substrate surface and an upper planar substrate surface. A lower layer of an...
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5939730 |
Self-aligned thin barrier high temperature superconductor edge junction
An edge junction 10 with reduced parasitic inductance. The edge junction 10 has a laminar structure 22 including: a substrate 14; a first superconductive layer 12 deposited on a substrate 14; a...
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5831279 |
Device and method providing weak links in a superconducting film and device comprising weak links
A device with weak links (Josephson junctions) in a superconducting film has two single crystals connected through an interconnecting arrangement that may have one or more sublayers. At least two...
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5821557 |
Josephson junctions and process for making same
A Josephson junction includes a substrate, a first superconducting layer, a second superconducting layer transversely overlaid on the first layer with an insulating layer interposed therebetween,...
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5801393 |
Superconductor-insulator-superconductor Josephson tunnel junction and method therefor
A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented...
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5757243 |
High frequency system including a superconductive device and temperature controlling apparatus
An effective high frequency oscillator is made of a plurality of Josephson devices. A high frequency converter as a high frequency circuit is made of the high frequency oscillator, nonlinear...
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5710437 |
Radiation detecting device using superconducting tunnel junction and method of fabricating the same
A radiation detecting device including a superconducting tunnel junction having a three-layer structure formed by depositing a lower electrode, a tunnel barrier layer, and an upper electrode in...
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5624885 |
Josephson junction device of oxide superconductor and process for preparing the same
A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift...
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5510628 |
Deep ultraviolet photolithographically defined ultra-thin films for selective cell adhesion and outgrowth and method of manufacturing the same and devices containing the same
Patterned surfaces for the selective adhesion and outgrowth of cells are useful in cell culture devices, prosthetic implants, and cell-based microsensors. Such surfaces may be prepared by a deep...
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5498881 |
Superconducting device having a single junction structure appropriate for integration
A superconducting device has a substrate and a superconducting film formed on the substrate. A surface of the substrate has a first surface portion of which a curvature is constant or changes...
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5477061 |
Josephson device having an overlayer structure with improved thermal stability
A Josephson device comprises a first electrode layer of a superconducting material and containing Nb therein as a constituent element, an overlayer of a nitride of a refractory metal element...
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5472934 |
Anisotropic superconducting device and fluxon device
An anisotropic superconductor junction device consisting of a lower superconducting layer and an upper superconducting layer separated by a barrier layer, in which the upper and lower...
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5468723 |
Method for forming a superconducting weak link device
A superconducting device has a structure of superconductor--normal--conductor (semiconductor)--superconductor. The superconducting regions and the normal-conductor region can be made of the same...
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5422497 |
Superconducting device having layered structure composed of oxide thin film and insulator thin film
A superconducting device includes a first thin film of oxide superconductor material formed on a substrate, a second thin film of insulator material stacked on the first thin film of oxide...
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5378683 |
Josephson junction structure
The disclosure relates to a Josephson junction formed by a non-superconducting barrier between two superconducting films of the (R) BaCuO (R=rare earth) group. In order to take advantage of the...
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5362709 |
Superconducting device
A superconducting tunnel junction is disclosed herein. The superconducting tunnel junction is characterized in that a pair of oxide superconducting layers thereof and a tunnel barrier layer located...
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5358925 |
Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer
An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85° K., a transition width...
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5334580 |
Superconducting device having superconducting weak coupling
A superconducting device has a structure of superconductor - normal-conductor (semiconductor) - superconductor. The superconductors constituting the superconducting device are made of a...
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5321276 |
Radiation sensing device and Josephson device
A superconducting tunnel junction radiation sensing device includes first and second superconductor electrodes and a tunnel barrier layer interposed therebetween. The tunnel barrier layer is made...
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