Matches 1 - 50 out of 294 1 2 3 4 5 6 >
Match Document Document Title
7622349 Floating gate non-volatile memory and method thereof  
A method is provided which includes forming a first gate overlying a major surface of an electronic device substrate and forming a second gate overlying and spaced apart from the first gate. The...
7602069 Micro electronic component with electrically accessible metallic clusters  
A micro electronic component, preferably in the form of an electronic memory, includes the use of clusters as an electronic memory. Also disclosed as part of the present invention is a method for...
7602008 Split gate non-volatile memory devices and methods of forming the same  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7586145 EEPROM flash memory device with jagged edge floating gate  
An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
7585755 Method of fabricating non-volatile memory device  
A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be...
7585724 FLASH memory device and method of manufacture  
A FLASH memory device is provided including a plurality of first floating gates formed over a gate oxide layer formed over a substrate, the first group of floating gates being formed using a...
7573092 Nonvolatile semiconductor memory device having element isolating region of trench type  
Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the...
7569882 Non-volatile multibit memory cell and method of manufacturing thereof  
One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second...
7560346 Semiconductor device and method of manufacturing the same  
A semiconductor device includes: a first FET that is formed with first unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger...
7554840 Semiconductor device and fabrication thereof  
A memory device is disclosed. A floating gate is disposed overlying a substrate. A tunneling dielectric layer is interposed between the floating gate and the substrate. An inter poly dielectric...
7547941 NAND non-volatile two-bit memory and fabrication method  
A NAND non-volatile two-bit memory cell comprises a cell stack and two select stacks disposed on an active area of a substrate. Each select stack is respectively disposed on a side of the cell...
7528438 Non-volatile memory including assist gate  
A non-volatile memory is provided. An assist gate structure is formed on a substrate such that the width at the bottom of the assist gate structure is greater than the width at the top of the...
7521750 Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same  
A nonvolatile semiconductor device includes a pair of multi-bit nonvolatile memory unit cells. Each unit cell includes a grid type semiconductor body in which a plurality of parallel semiconductor...
7501678 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a semiconductor substrate. Active regions are formed on the surface of the substrate, separated from one another by element separating regions and...
7501677 SONOS memory with inversion bit-lines  
A SONOS memory cell, formed within a semiconductor substrate, includes a bottom dielectric disposed on the semiconductor substrate, a charge trapping material disposed on the bottom dielectric, and...
7498630 Nonvolatile semiconductor memory  
A nonvolatile semiconductor memory which is configured to include a plurality of word lines disposed in a row direction; a plurality of bit lines disposed in a column direction perpendicular to the...
7495281 Non-volatile memory device and methods of forming and operating the same  
In a non-volatile memory device and methods of forming and operating the same, one memory transistor includes sidewall selection gates covering both sidewalls of a floating gate when the floating...
7492002 Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate  
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select...
7492000 Self-aligned split-gate nonvolatile memory structure and a method of making the same  
Provided are non-volatile split-gate memory cells having self-aligned floating gate and the control gate structures and exemplary processes for manufacturing such memory cells that provide improved...
7491999 Non-volatile memory cells utilizing substrate trenches  
Several embodiments of flash EEPROM split-channel cell arrays are described that position the channels of cell select transistors along sidewalls of trenches in the substrate, thereby reducing the...
7449746 EEPROM with split gate source side injection  
Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably...
7449744 Non-volatile electrically alterable memory cell and use thereof in multi-function memory array  
A multi-function memory array that includes a DRAM distributed in several DRAM sectors, a Flash EEPROM distributed in several Flash EEPROM sectors, a data bus interconnecting the DRAM sectors and...
7449742 Memory device with active layer of dendrimeric material  
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active...
7442988 Semiconductor devices and methods of fabricating the same  
Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed...
7442985 Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same  
An element isolating region for separating an element region of a semiconductor layer is formed in a peripheral circuit section of a semiconductor memory device, and a first conductive layer is...
RE40486 Self-aligned non-volatile memory cell  
Disclosed is a self-aligned non-volatile memory cell including a small sidewall spacer electrically coupled and being located next to a main floating gate region. Both the small sidewall spacer and...
7391078 Non-volatile memory and manufacturing and operating method thereof  
A non-volatile memory is provided. A substrate having a plurality of trenches and a plurality of select gates is provided. The trenches are arranged in parallel and extend in a first direction....
7382015 Semiconductor device including an element isolation portion having a recess  
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
7369436 Vertical NAND flash memory device  
Memory devices, arrays, and strings are included that facilitate the use of vertical floating gate memory cells in NAND architecture memory strings, arrays, and devices. NAND Flash memory strings,...
7355237 Shield plate for limiting cross coupling between floating gates  
A memory system is disclosed that includes a set of non-volatile storage elements. Each of said non-volatile storage elements includes source/drain regions at opposite sides of a channel in a...
7339230 Structure and method for making high density mosfet circuits with different height contact lines  
Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits include a contact line, a first gate layer...
7323740 Single chip data processing device with embedded nonvolatile memory and method thereof  
A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type...
7315057 Split gate non-volatile memory devices and methods of forming same  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7312495 Split gate multi-bit memory cell  
A multi-bit memory cell ( 200 ) with a control gate ( 220 ) for controlling a middle portion of a channel region ( 208 ) provides improved operation including faster programming at smaller voltages...
7307882 Non-volatile memory  
A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the...
7300745 Use of pedestals to fabricate contact openings  
Nonvolatile memory wordlines ( 160 ) are formed as sidewall spacers on sidewalls of control gate structures ( 280 ). Each control gate structure may contain floating and control gates ( 120, 140 ),...
7285816 Content addressable matrix memory cell  
A CAM memory cell integrated on a semiconductor substrate includes a plurality of floating gate memory cells, matrix-organized in rows, called word lines, and columns, called bit lines. The cells...
7265411 Non-volatile memory having multiple gate structure  
In one embodiment, a semiconductor device comprises an insulated floating gate disposed on a semiconductor substrate, an insulated program gate formed at least on a side surface of the floating...
7253069 Method for manufacturing silicon-on-insulator wafer  
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a...
7250652 Nonvolatile semiconductor memory device including an assistant gate formed in a trench  
A nonvolatile semiconductor memory device includes a substrate, a central structure, a second gate insulating film, a floating gate, and a control gate. The substrate has a trench. The central...
7244984 Nonvolatile semiconductor memory including two memory cell columns sharing a single bit line  
This nonvolatile semiconductor memory includes: a first and a second memory cell column having memory cell transistors connected in series with a floating gate and a first and a second control gate...
7242051 Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing  
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the...
7227219 Charge trapping memory cell and fabrication method  
A memory cell patterned as a trench transistor is provided with a first gate electrode ( 4 ) as auxiliary gate for source-side injection and a second gate electrode ( 5 ) electrically insulated...
7224019 Semiconductor device and method of manufacture thereof  
A semiconductor device comprises a semiconductor substrate, an electrically rewritable semiconductor memory cell provided on the semiconductor substrate, the memory cell comprising an island...
7220671 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications  
Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal...
7214579 Self-aligned 2-bit “double poly CMP” flash memory cell  
Fabrication of a memory cell, the cell including a first floating gate stack (A), a second floating gate stack (B) and an intermediate access gate (AG), the floating gate stacks (A, B) including a...
7211857 Non-volatile semiconductor memory device  
A non-volatile semiconductor memory device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a plurality of memory cells formed on the semiconductor...
7208794 High-density NROM-FINFET  
Semiconductor memory having memory cells, each including first and second conductively-doped contact regions and a channel region arranged between the latter, formed in a web-like rib made of...
7205601 FinFET split gate EEPROM structure and method of its fabrication  
A FinFET split gate EEPROM structure includes a semiconductor substrate and an elongated semiconductor fin extending above the substrate. A control gate straddles the fin, the fin's sides and a...
7199424 Scalable flash EEPROM memory cell with notched floating gate and graded source region  
An memory device, and method of making same, that includes source and drain regions defining a channel region therebetween. A select gate is formed over and insulated from a first portion of the...
Matches 1 - 50 out of 294 1 2 3 4 5 6 >