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7638833 |
Nonvolatile memory device and method for fabricating the same
A nonvolatile memory device including a floating gate formed on a tunnel oxide layer that is formed on a semiconductor substrate. The device also includes a drain region formed in the substrate...
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7629639 |
Nanotube- and nanocrystal-based non-volatile memory
An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that...
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7629641 |
Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
Non-volatile memory devices and arrays are described that utilize reverse mode non-volatile memory cells that have band engineered gate-stacks and nano-crystal charge trapping in EEPROM and block...
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7622761 |
Non-volatile memory device and method of manufacturing the same
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to...
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7622767 |
Semiconductor device with T-shaped gate electrode and hollow region adjacent the gate electrode
In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective...
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7612403 |
Low power non-volatile memory and gate stack
Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells...
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7608883 |
Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain...
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7602010 |
Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same
In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a...
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7592662 |
Semiconductor device and semiconductor system
A semiconductor device includes a semiconductor substrate, a first and second semiconductor regions formed on the semiconductor substrate insulated and separated from each other, a gate dielectric...
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7589372 |
Nonvolatile memory device and method for fabricating the same
A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory device includes a...
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7586145 |
EEPROM flash memory device with jagged edge floating gate
An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
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7582928 |
Nonvolatile semiconductor memory device and its manufacturing method
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
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7582930 |
Non-volatile memory and method for manufacturing non-volatile memory
A coupling oxide film is formed on a silicon substrate, a polysilicon film is further formed thereupon, and a low-temperature oxide film is deposited to a thickness of 10 nm, for example. Next, a...
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7582929 |
Electronic device including discontinuous storage elements
An electronic device can include discontinuous storage elements that lie within a trench. In one embodiment, the electronic device can include a substrate having a trench that includes a wall and a...
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7579238 |
Method of forming a multi-bit nonvolatile memory device
In making a multi-bit memory cell, a first insulating layer is formed over a semiconductor substrate. A second insulating layer is formed over the first insulating layer. A layer of gate material...
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7573093 |
Non-volatile two-transistor programmable logic cell and array layout
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
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7573092 |
Nonvolatile semiconductor memory device having element isolating region of trench type
Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the...
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7560764 |
SONOS memory device having curved surface and method for fabricating the same
A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and...
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7557405 |
High-density nonvolatile memory
An improved nonvolatile memory cell made by a method for fabricating a three dimensional monolithic memory with increased density. The memory cell includes at least a part of a first conductor, a...
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7554840 |
Semiconductor device and fabrication thereof
A memory device is disclosed. A floating gate is disposed overlying a substrate. A tunneling dielectric layer is interposed between the floating gate and the substrate. An inter poly dielectric...
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7528438 |
Non-volatile memory including assist gate
A non-volatile memory is provided. An assist gate structure is formed on a substrate such that the width at the bottom of the assist gate structure is greater than the width at the top of the...
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7514739 |
Nonvolatile semiconductor device and method of fabricating the same
A stack-type nonvolatile semiconductor device comprises a memory device formed on a substrate including a semiconductor body elongated in one direction, having a cross section perpendicular to a...
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7508026 |
Non-volatile semiconductor memory device having a two-layer gate electrode transistor and method of manufacturing the device
A non-volatile semiconductor memory device has a gate insulating film formed on a semiconductor substrate between isolation regions, a first gate electrode formed on the gate insulating film, an...
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7494860 |
Methods of forming nonvolatile memories with L-shaped floating gates
In a nonvolatile memory using floating gates to store charge, individual floating gates are L-shaped. Orientations of L-shaped floating gates may alternate in the bit line direction and may also...
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7489006 |
Nonvolatile semiconductor storage device and manufacturing method therefor
A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between...
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7485513 |
One-device non-volatile random access memory cell
One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in...
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7485526 |
Floating-gate structure with dielectric component
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive...
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7482619 |
Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device
Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the...
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7473957 |
Floating gate non-volatile memory
A floating non-volatile memory has a substrate and source and drain regions disposed in a surface region of the substrate and spaced apart from each other with a channel forming semiconductor...
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7470947 |
Semiconductor memory and fabrication method for the same
A semiconductor memory includes memory cell transistors comprising a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide...
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7453117 |
Non-volatile semiconductor memory device
To achieve a high-speed and reliable read operation. A unit cell is constituted by a select gate 3 provided in a first region and on a substrate 1 with an insulating film 2 interposed...
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7449742 |
Memory device with active layer of dendrimeric material
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active...
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7446369 |
SONOS memory cell having high-K dielectric
A semiconductor memory device may include an intergate dielectric layer of a high-K dielectric material interposed between a floating gate and a control gate. With this intergate high-K dielectric...
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7446371 |
Non-volatile memory cell structure with charge trapping layers and method of fabricating the same
In a non-volatile memory device and a method for forming such a device, at least one edge of the charge trapping layer is recessed. In this manner, the threshold voltage of the device during a...
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7443725 |
Floating gate isolation and method of making the same
The present invention relates to a method for forming a set of floating gates which are isolated from each other by means of slits, as well as semiconductor devices using the floating gate. The...
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7442988 |
Semiconductor devices and methods of fabricating the same
Disclosed is a semiconductor device and method of fabricating the same. The device is disposed on a substrate, including a fin constructed with first and second sidewalls, a first gate line formed...
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7439572 |
Stacked gate memory cell with erase to gate, array, and method of manufacturing
A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injecton from the drain to the floating gate....
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7429766 |
Split gate type nonvolatile memory device
In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue...
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RE40486 |
Self-aligned non-volatile memory cell
Disclosed is a self-aligned non-volatile memory cell including a small sidewall spacer electrically coupled and being located next to a main floating gate region. Both the small sidewall spacer and...
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7420253 |
Three-gate transistor structure
A transistor structure comprises a semiconductor element extending between a source zone and a drain zone, as well as three portions of gates disposed on different sides of the semiconductor...
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7416944 |
Flash EEPROM device and method for fabricating the same
In a flash EEPROM device, and method for fabricating the same, no bit line contact is made, thereby minimizing a design rule between a contact and a gate. Thus, cell size may be reduced. The flash...
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7414282 |
Method of manufacturing a non-volatile memory device
A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main...
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7414280 |
Systems and methods for memory structure comprising embedded flash memory
A memory structure that combines multiple embedded flash memory. The flash memory can be used, e.g., as air replacement cells or back up memory, or additional memory cells. In one aspect, the flash...
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7414297 |
Capacitor constructions
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps...
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7391076 |
Non-volatile memory cells
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
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7391072 |
Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
Structures and methods for programmable array type logic and/or memory with p-channel devices and asymmetrical low tunnel barrier intergate insulators are provided. The programmable array type...
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7391078 |
Non-volatile memory and manufacturing and operating method thereof
A non-volatile memory is provided. A substrate having a plurality of trenches and a plurality of select gates is provided. The trenches are arranged in parallel and extend in a first direction....
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7385244 |
Flash memory devices with box shaped polygate structures
A method for forming an improved etching hardmask oxide layer in a polysilicon etching process including providing a planarized semiconductor wafer process surface including adjacent first exposed...
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7382015 |
Semiconductor device including an element isolation portion having a recess
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
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7379321 |
Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic...
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