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8183620 |
Semiconductor memory and fabrication method for the same
A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide...
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8174061 |
Floating-gate structure with dielectric component
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive...
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8164131 |
Nonvolatile semiconductor memory device and method of manufacturing the same
A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity...
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8154071 |
Nonvolatile semiconductor memory device and method for fabricating nonvolatile semiconductor memory device
According to an aspect of the present invention, there is provided a method for fabricating a nonvolatile semiconductor memory device including a memory cell being formed in a first region of a...
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8120090 |
Aging device
An aging device includes a semiconductor substrate, an element isolation insulating layer which is formed in a recessed portion of the semiconductor substrate and which has an upper surface higher...
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8115247 |
Non-volatile semiconductor memory device having an erasing gate
A non-volatile semiconductor memory device includes a floating gate formed above a semiconductor substrate; an erasing gate formed above the floating gate; a control gate formed above a channel...
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8115246 |
Semiconductor device including protrusion type isolation layer
A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type...
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8110863 |
TFT charge storage memory cell having high-mobility corrugated channel
A rewriteable nonvolatile memory cell having two bits per cell is described. The memory cell preferably operates by storing charge in a dielectric charge storage layer or in electrically isolated...
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8093648 |
Method for manufacturing non-volatile memory and structure thereof
A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a...
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8093631 |
Non-volatile memory device and method for fabricating the same
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a gate structure on a substrate, the gate structure including a first insulation layer,...
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8076712 |
Semiconductor memory comprising dual charge storage nodes and methods for its fabrication
A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion recessed into a semiconductor...
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8067795 |
Single poly EEPROM without separate control gate nor erase regions
A single-poly EEPROM memory device comprises source and drain regions in a semiconductor body, a floating gate overlying a portion of the source and drain regions, which defines a...
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8062945 |
Methods of forming non-volatile memory structure with crested barrier tunnel layer
Embodiments of methods of forming non-volatile memory structures are provided. In one such embodiment, first and second source/drain regions are formed on a substrate so that the first and second...
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8063435 |
Semiconductor memory and method for manufacturing the same
A semiconductor memory in which a gate insulating film (tunnel insulating film) in a memory cell provides higher operational reliability. The semiconductor memory includes an insulating film 3...
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8049298 |
Isolation trenches for memory devices
A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug is recessed below an upper surface...
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8044485 |
Semiconductor device
A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P-N junction...
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8039889 |
Non-volatile memory devices including stepped source regions and methods of fabricating the same
A non-volatile memory device includes a semiconductor substrate having a first section including a substantially planar first top surface, a second section including a substantially planar second...
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8030161 |
Gate electrode for a nonvolatile memory cell
A nonvolatile memory cell includes a substrate comprising a source, drain, and channel between the source and the drain. A tunnel dielectric layer overlies the channel, and a localized charge...
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8026545 |
EEPROM
An EEPROM according to the present invention includes: a semiconductor layer of a first conductive type; and a first insulating film formed on the semiconductor layer. A first impurity region, a...
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8017991 |
Non-volatile memory device and methods of operating and fabricating the same
Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory device may include a plurality of first...
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8008701 |
Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained
A method of making a non-volatile MOS semiconductor memory device includes a formation phase, in a semiconductor material substrate, of isolation regions filled by field oxide and of memory cells...
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8004032 |
System and method for providing low voltage high density multi-bit storage flash memory
A system and method is disclosed for providing a low voltage high density multi-bit storage flash memory. A dual bit memory cell of the invention comprises a substrate having a common source, a...
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8004033 |
High-density nonvolatile memory
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped...
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7999304 |
Semiconductor device
A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel...
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7998814 |
Semiconductor memory device and method of fabricating the same
A semiconductor memory devices and a method of fabricating the same includes sequentially stacking a tunnel insulating layer, a first nano-grain film, a conductive layer for a floating gate, and a...
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7989871 |
Nonvolatile semiconductor memory device having insulating films that include multiple layers formed by insulating materials having d-orbital metal element and insulating materials without d-orbital metal element
A nonvolatile semiconductor memory device includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate...
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7989289 |
Floating gate structures
Floating gate structures are generally described. In one example, an electronic device includes a semiconductor substrate, a tunnel dielectric coupled with the semiconductor substrate, and a...
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7989874 |
Nonvolatile memory device and method for manufacturing the same
The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same....
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7985670 |
Method of forming U-shaped floating gate with a poly meta-stable polysilicon layer
A method of realizing a flash floating poly gate using an MPS process can include forming a tunnel oxide layer on an active region of a semiconductor substrate; and then forming a first floating...
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7982255 |
Flash memory with recessed floating gate
A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of...
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7977729 |
Aging device
An aging device according to an embodiment of the present invention includes a semiconductor substrate, first and second diffusion layers provided in a first element region, a floating gate...
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7977226 |
Flash memory device and method of fabricating the same
A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on...
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7968932 |
Semiconductor device and manufacturing method thereof
A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode...
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7968398 |
Method for producing a floating gate with an alternation of lines of first and second materials
A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the...
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7956404 |
Non-volatile two-transistor programmable logic cell and array layout
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
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7951670 |
Flash memory cell with split gate structure and method for forming the same
A split gate memory cell. A floating gate is disposed on and insulated from a substrate comprising an active area separated by a pair of isolation structures formed therein. The floating gate is...
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7947590 |
Method of manufacturing a non-volatile memory device
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to...
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7939879 |
Semiconductor device
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further...
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7935634 |
Integrated circuits, micromechanical devices, and method of making same
A method of making an integrated circuit comprises providing a substrate and forming a structure on the substrate comprising a first enclosed portion of a carbon material and a second portion of...
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7923327 |
Method of fabricating non-volatile memory device with concavely depressed electron injection region
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device comprises: a control gate region formed by doping a semiconductor substrate with...
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7919809 |
Dielectric layer above floating gate for reducing leakage current
A memory system is disclosed that includes a set of non-volatile storage elements. A given memory cell has a dielectric cap above the floating gate. In one embodiment, the dielectric cap resides...
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7915655 |
Semiconductor device
A semiconductor device includes a semiconductor substrate and a metal-oxide semiconductor transistor. A first dielectric layer of the metal oxide semiconductor transistor overlaps source and drain...
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7915665 |
Non-volatile two-transistor programmable logic cell and array layout
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
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7915666 |
Nonvolatile semiconductor memory devices with charge injection corner
An erase method where a corner portion on which an electric field concentrates locally is provided on the memory gate electrode, and charges in the memory gate electrode are injected into a charge...
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7910974 |
Semiconductor device and method for fabricating thereof
A silicon nitride film, which is a second hard mask, is dry etched to be removed completely. The silicon nitride film, which is formed on a sidewall of a silicon nitride film used as a first hard...
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7906805 |
Reduced-edge radiation-tolerant non-volatile transistor memory cells
An edgeless one-transistor flash memory array includes transistors that have two polysilicon gate layers that overlay an active region. The bottom polysilicon gate layer is electrically isolated....
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7902584 |
Semiconductor memory device and manufacturing method thereof
This disclosure concerns a semiconductor memory device including a substrate; an insulating film provided above the substrate; a semiconductor layer provided above the insulating film and extending...
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7898018 |
Non-volatile two-transistor programmable logic cell and array layout
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
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7897476 |
Method of manufacturing SOI substrate
To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a...
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7884415 |
Semiconductor memory device having multiple air gaps in interelectrode insulating film
In a semiconductor device, each of a plurality of floating gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the...
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