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Match Document Document Title
8183620 Semiconductor memory and fabrication method for the same  
A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide...
8174061 Floating-gate structure with dielectric component  
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive...
8164131 Nonvolatile semiconductor memory device and method of manufacturing the same  
A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity...
8154071 Nonvolatile semiconductor memory device and method for fabricating nonvolatile semiconductor memory device  
According to an aspect of the present invention, there is provided a method for fabricating a nonvolatile semiconductor memory device including a memory cell being formed in a first region of a...
8120090 Aging device  
An aging device includes a semiconductor substrate, an element isolation insulating layer which is formed in a recessed portion of the semiconductor substrate and which has an upper surface higher...
8115247 Non-volatile semiconductor memory device having an erasing gate  
A non-volatile semiconductor memory device includes a floating gate formed above a semiconductor substrate; an erasing gate formed above the floating gate; a control gate formed above a channel...
8115246 Semiconductor device including protrusion type isolation layer  
A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type...
8110863 TFT charge storage memory cell having high-mobility corrugated channel  
A rewriteable nonvolatile memory cell having two bits per cell is described. The memory cell preferably operates by storing charge in a dielectric charge storage layer or in electrically isolated...
8093648 Method for manufacturing non-volatile memory and structure thereof  
A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a...
8093631 Non-volatile memory device and method for fabricating the same  
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a gate structure on a substrate, the gate structure including a first insulation layer,...
8076712 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication  
A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion recessed into a semiconductor...
8067795 Single poly EEPROM without separate control gate nor erase regions  
A single-poly EEPROM memory device comprises source and drain regions in a semiconductor body, a floating gate overlying a portion of the source and drain regions, which defines a...
8062945 Methods of forming non-volatile memory structure with crested barrier tunnel layer  
Embodiments of methods of forming non-volatile memory structures are provided. In one such embodiment, first and second source/drain regions are formed on a substrate so that the first and second...
8063435 Semiconductor memory and method for manufacturing the same  
A semiconductor memory in which a gate insulating film (tunnel insulating film) in a memory cell provides higher operational reliability. The semiconductor memory includes an insulating film 3...
8049298 Isolation trenches for memory devices  
A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug is recessed below an upper surface...
8044485 Semiconductor device  
A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P-N junction...
8039889 Non-volatile memory devices including stepped source regions and methods of fabricating the same  
A non-volatile memory device includes a semiconductor substrate having a first section including a substantially planar first top surface, a second section including a substantially planar second...
8030161 Gate electrode for a nonvolatile memory cell  
A nonvolatile memory cell includes a substrate comprising a source, drain, and channel between the source and the drain. A tunnel dielectric layer overlies the channel, and a localized charge...
8026545 EEPROM  
An EEPROM according to the present invention includes: a semiconductor layer of a first conductive type; and a first insulating film formed on the semiconductor layer. A first impurity region, a...
8017991 Non-volatile memory device and methods of operating and fabricating the same  
Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory device may include a plurality of first...
8008701 Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained  
A method of making a non-volatile MOS semiconductor memory device includes a formation phase, in a semiconductor material substrate, of isolation regions filled by field oxide and of memory cells...
8004032 System and method for providing low voltage high density multi-bit storage flash memory  
A system and method is disclosed for providing a low voltage high density multi-bit storage flash memory. A dual bit memory cell of the invention comprises a substrate having a common source, a...
8004033 High-density nonvolatile memory  
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped...
7999304 Semiconductor device  
A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel...
7998814 Semiconductor memory device and method of fabricating the same  
A semiconductor memory devices and a method of fabricating the same includes sequentially stacking a tunnel insulating layer, a first nano-grain film, a conductive layer for a floating gate, and a...
7989871 Nonvolatile semiconductor memory device having insulating films that include multiple layers formed by insulating materials having d-orbital metal element and insulating materials without d-orbital metal element  
A nonvolatile semiconductor memory device includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate...
7989289 Floating gate structures  
Floating gate structures are generally described. In one example, an electronic device includes a semiconductor substrate, a tunnel dielectric coupled with the semiconductor substrate, and a...
7989874 Nonvolatile memory device and method for manufacturing the same  
The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same....
7985670 Method of forming U-shaped floating gate with a poly meta-stable polysilicon layer  
A method of realizing a flash floating poly gate using an MPS process can include forming a tunnel oxide layer on an active region of a semiconductor substrate; and then forming a first floating...
7982255 Flash memory with recessed floating gate  
A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of...
7977729 Aging device  
An aging device according to an embodiment of the present invention includes a semiconductor substrate, first and second diffusion layers provided in a first element region, a floating gate...
7977226 Flash memory device and method of fabricating the same  
A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on...
7968932 Semiconductor device and manufacturing method thereof  
A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode...
7968398 Method for producing a floating gate with an alternation of lines of first and second materials  
A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the...
7956404 Non-volatile two-transistor programmable logic cell and array layout  
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
7951670 Flash memory cell with split gate structure and method for forming the same  
A split gate memory cell. A floating gate is disposed on and insulated from a substrate comprising an active area separated by a pair of isolation structures formed therein. The floating gate is...
7947590 Method of manufacturing a non-volatile memory device  
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to...
7939879 Semiconductor device  
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further...
7935634 Integrated circuits, micromechanical devices, and method of making same  
A method of making an integrated circuit comprises providing a substrate and forming a structure on the substrate comprising a first enclosed portion of a carbon material and a second portion of...
7923327 Method of fabricating non-volatile memory device with concavely depressed electron injection region  
Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device comprises: a control gate region formed by doping a semiconductor substrate with...
7919809 Dielectric layer above floating gate for reducing leakage current  
A memory system is disclosed that includes a set of non-volatile storage elements. A given memory cell has a dielectric cap above the floating gate. In one embodiment, the dielectric cap resides...
7915655 Semiconductor device  
A semiconductor device includes a semiconductor substrate and a metal-oxide semiconductor transistor. A first dielectric layer of the metal oxide semiconductor transistor overlaps source and drain...
7915665 Non-volatile two-transistor programmable logic cell and array layout  
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
7915666 Nonvolatile semiconductor memory devices with charge injection corner  
An erase method where a corner portion on which an electric field concentrates locally is provided on the memory gate electrode, and charges in the memory gate electrode are injected into a charge...
7910974 Semiconductor device and method for fabricating thereof  
A silicon nitride film, which is a second hard mask, is dry etched to be removed completely. The silicon nitride film, which is formed on a sidewall of a silicon nitride film used as a first hard...
7906805 Reduced-edge radiation-tolerant non-volatile transistor memory cells  
An edgeless one-transistor flash memory array includes transistors that have two polysilicon gate layers that overlay an active region. The bottom polysilicon gate layer is electrically isolated....
7902584 Semiconductor memory device and manufacturing method thereof  
This disclosure concerns a semiconductor memory device including a substrate; an insulating film provided above the substrate; a semiconductor layer provided above the insulating film and extending...
7898018 Non-volatile two-transistor programmable logic cell and array layout  
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
7897476 Method of manufacturing SOI substrate  
To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a...
7884415 Semiconductor memory device having multiple air gaps in interelectrode insulating film  
In a semiconductor device, each of a plurality of floating gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the...
Matches 1 - 50 out of 502 1 2 3 4 5 6 7 8 9 10 11 >