Patents in Class 257/316

Matches 1 - 50 out of 1517

Match	Document	Document Title
1	7619276	FinFET flash memory device with an extended floating back gate A floating gate is formed on one side of the semiconductor fin on a floating gate dielectric. A control gate dielectric is formed on the opposite side of the semiconductor fin and on the floating...
2	7618861	Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films...
3	7615819	Semiconductor device A semiconductor device includes a semiconductor substrate, an insulating film formed above an upper surface of the substrate and including a contact hole penetrating the insulating film, a wiring...
4	7612411	Dual-gate device and method A memory circuit having dual-gate memory cells and a method for fabricating such a memory circuit are disclosed. The dual-gate memory cells each include a memory device and an access device sharing...
5	7612404	Semiconductor device A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode,...
6	7612401	Non-volatile memory cell A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
7	7608885	Flash memory device and method of manufacturing the same A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO 2 /Al 2 O 3 /ZrO 2 ...
8	7608884	Scalable split-gate flash memory cell with high source-coupling ratio A system and method provides an improved source-coupling ratio in flash memories. In one embodiment, a flash memory cell system with high source-coupling ratio includes at least a conventional...
9	7608488	Semiconductor memory device and method of manufacturing the same A manufacturing method of a semiconductor memory device for manufacturing a first semiconductor device and a second semiconductor device wherein a cell array ratio is smaller than that of the first...
10	7602011	Semiconductor memory device having charge storage layer and method of manufacturing the same The semiconductor memory device according to the present invention includes a charge storage layer 26 formed over a semiconductor substrate 10 and including a plurality of particles 16 as...
11	7602007	Semiconductor device having controllable transistor threshold voltage A semiconductor device of this invention is a single-layer gate nonvolatile semiconductor memory in which a floating gate having a predetermined shape is formed on a semiconductor substrate. This...
12	7602006	Semiconductor flash device A flash memory device includes a floating gate made of a multi-layered structure. The floating gate includes a hetero-pn junction which serves as a quantum well to store charge in the floating...
13	7598565	Semiconductor memory element, semiconductor memory device and method of fabricating the same It is an object to provide a semiconductor memory device having a highly reliable and small-sized involatile memory by realizing a semiconductor memory element which restrains extreme concentration...
14	7598564	Non-volatile memory devices and methods of forming non-volatile memory devices A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or...
15	7598563	Memory device and method for manufacturing the same A split gate (flash) EEPROM cell and a method for manufacturing the same is disclosed, in which a control gate and a floating gate are formed in a vertical structure, to minimize a size of the...
16	7598561	NOR flash memory Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with...
17	7595527	Non-volatile electromechanical field effect devices and circuits using same and methods of forming same Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each...
18	7592667	Semiconductor device including nonvolatile memory and method for fabricating the same A semiconductor device including a nonvolatile memory and the fabrication method of the same is described formed on a semiconductor substrate. According to the semiconductor device, a second gate...
19	7592665	Non-volatile memory devices having floating gates A nonvolatile memory device may include a substrate having a cell region, and a cell device isolation layer on the cell region of the substrate to define a cell active region. A floating gate may...
20	7592664	Nonvolatile memory structure and method of forming the same Example embodiments are directed to a method of forming a nonvolatile memory structure and a nonvolatile memory structure including a plurality of charge storage patterns, wherein an electrical...
21	7592662	Semiconductor device and semiconductor system A semiconductor device includes a semiconductor substrate, a first and second semiconductor regions formed on the semiconductor substrate insulated and separated from each other, a gate dielectric...
22	7589375	Non-volatile memory devices including etching protection layers and methods of forming the same A non-volatile memory device includes a semiconductor substrate including a cell array region and a peripheral circuit region. A first cell unit is on the semiconductor substrate in the cell array...
23	7589373	Semiconductor device The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
24	7586145	EEPROM flash memory device with jagged edge floating gate An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
25	7585724	FLASH memory device and method of manufacture A FLASH memory device is provided including a plurality of first floating gates formed over a gate oxide layer formed over a substrate, the first group of floating gates being formed using a...
26	7582942	Planar flux concentrator for MRAM devices The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of...
27	7582928	Nonvolatile semiconductor memory device and its manufacturing method A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
28	7582927	Flash EEPROM cell and method of fabricating the same A semiconductor device including a memory cell having a memory transistor and select gate transistor and a peripheral transistor is disclosed. The memory transistor has a stacked gate structure...
29	7582926	Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor...
30	7582924	Semiconductor devices having polymetal gate electrodes Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate...
31	7582530	Managing floating gate-to-floating gate spacing to support scalability Formation techniques are utilized to increase the space or distance between floating gates of a memory array of floating gate transistors. In at least some embodiments, floating gates are first...
32	7579647	Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor...
33	7576384	Storage device with multi-level structure Data storage device, comprising: a stack of layers formed by an alternation of first layers with a conductivity of less than approximately 0.01 (Ω·cm) −1 and second layers with a conductivity...
34	7573093	Non-volatile two-transistor programmable logic cell and array layout A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the...
35	7573092	Nonvolatile semiconductor memory device having element isolating region of trench type Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the...
36	7573091	Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device that includes a semiconductor substrate ( 10 ) having source/drain diffusion regions ( 14 ) formed therein and control gates ( 20 ) formed...
37	7573089	Non-volatile memory device Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
38	7570521	Low power flash memory devices A buried bipolar junction is provided in a floating gate transistor flash memory device. During a write operation electrons are injected into a surface depletion region of the memory cell...
39	7569881	Semiconductor integrated circuit device with reduced leakage current The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a...
40	7568960	Capacitive signal connector The present disclosure is directed to connectors and methods for passing signals through capacitive coupling and electron tunneling. The connectors according to the present disclosure can include...
41	7560769	Non-volatile memory cell device and methods A method of fabricating a memory cell including forming nanodots over a first dielectric layer and forming a second dielectric layer over the nanodots, where the second dielectric layer encases the...
42	7560768	Nonvolatile memory device and method of manufacturing the same Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a...
43	7560767	Nonvolatile semiconductor memory device A nonvolatile semiconductor memory device according to an example of the present invention includes source/drain diffusion layers, a first insulation film on a channel between the source/drain...
44	7560765	Nonvolatile memory device and method of fabricating the same A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the...
45	7560342	Method of manufacturing a semiconductor device having a plurality of memory and non-memory devices Embodiments relate to a method of manufacturing a semiconductor device that may simplify a manufacturing process and may reduce process costs. According to embodiments, the method may include...
46	7557405	High-density nonvolatile memory An improved nonvolatile memory cell made by a method for fabricating a three dimensional monolithic memory with increased density. The memory cell includes at least a part of a first conductor, a...
47	7554152	Versatile system for integrated sense transistor The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed,...
48	7554151	Low voltage non-volatile memory cell with electrically transparent control gate An EEPROM having a charge storage element, i.e., a floating gate, in the substrate adjacent to vertically separated source and drain electrodes. An electrically transparent poly control gate allows...
49	7553729	Method of manufacturing non-volatile memory device A method of manufacturing a non-volatile memory device includes the steps of forming gates respectively having a structure in which a gate insulating layer, a first conductive layer, a dielectric...
50	7550801	Nonvolatile semiconductor memory device A nonvolatile semiconductor memory device includes a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and a control gate electrode. The tunnel insulating film...

Matches 1 - 50 out of 1517

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