Patents in Class 257/315

Matches 1 - 50 out of 1626

Match	Document	Document Title
1	7619926	NAND flash memory with fixed charge A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of...
2	7619287	Method of forming a low capacitance semiconductor device and structure therefor In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the...
3	7619279	Three dimensional flash cell A floating gate memory cell includes isolation regions between adjacent cells, and a staggered pattern of columns of cells. Word lines are formed parallel to control gate structures.
4	7619275	Process for forming an electronic device including discontinuous storage elements A process for forming an electronic device can include forming a trench within a substrate, wherein the trench includes a wall and a bottom. The process can also include including forming a portion...
5	7619274	Nonvolatile semiconductor memory device and method of manufacturing the same A nonvolatile semiconductor memory device includes a floating gate electrode which is selectively formed on a main surface of a first conductivity type with a first gate insulating film interposed...
6	7618863	Method of fabricating flash memory device with increased coupling ratio A method of fabricating a flash memory which increases a coupling ratio between a floating gate and a control gate in a cell. The method comprises sequentially forming a tunnel oxide film, and...
7	7618861	Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films...
8	7615819	Semiconductor device A semiconductor device includes a semiconductor substrate, an insulating film formed above an upper surface of the substrate and including a contact hole penetrating the insulating film, a wiring...
9	7615818	Semiconductor device and method of manufacturing the same The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate,...
10	7615447	Composite charge storage structure formation in non-volatile memory using etch stop technologies Semiconductor-based non-volatile memory that includes memory cells with composite charge storage elements is fabricated using an etch stop layer during formation of at least a portion of the...
11	7615446	Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor...
12	7612402	Nonvolatile memory semiconductor device and manufacturing method thereof To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon film 7 and an insulating film 8 are...
13	7612401	Non-volatile memory cell A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
14	7608883	Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain...
15	7608882	Split-gate non-volatile memory A split-gate non-volatile memory cell is described, including a substrate, a charge-trapping layer on the substrate, a split gate on the charge-trapping layer, and a source/drain in the substrate...
16	7605473	Nonvolatile memory devices Methods of fabricating nonvolatile memory devices are provided. An isolation layer is formed on a substrate. The substrate has a memory region and a well contact region and the isolation layer...
17	7605421	Non-volatile semiconductor memory element and method of manufacturing the same, and semiconductor integrated circuit device including the non-volatile semiconductor memory element A non-volatile semiconductor memory element includes: a semiconductor region of a first conductivity type formed in a plate-like form on a semiconductor substrate; a first insulating film formed on...
18	7605044	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or overa gate electrode and a...
19	7602030	Hafnium tantalum oxide dielectrics A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments...
20	7602005	Memory devices including spacer-shaped electrodes on pedestals and methods of manufacturing the same A NOR flash memory device includes a substrate having trenches that extend in a first direction and stepped portions that are arranged between the trenches. A bit region having a linear shape...
21	7602004	Semiconductor device and methods for forming the same A semiconductor device includes a first transistor and a second transistor formed on a substrate. Each of the first transistor and the second transistor has a first source region, first drain...
22	7601589	Method of manufacturing flash memory device The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by...
23	7598564	Non-volatile memory devices and methods of forming non-volatile memory devices A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or...
24	7598563	Memory device and method for manufacturing the same A split gate (flash) EEPROM cell and a method for manufacturing the same is disclosed, in which a control gate and a floating gate are formed in a vertical structure, to minimize a size of the...
25	7598562	Semiconductor device and method of manufacturing the same A semiconductor device including a semiconductor substrate; an element isolation region having a trench filled with an insulating film defined on the semiconductor substrate; a memory cell...
26	7598561	NOR flash memory Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with...
27	7595528	Nano-enabled memory devices and anisotropic charge carrying arrays Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate,...
28	7592664	Nonvolatile memory structure and method of forming the same Example embodiments are directed to a method of forming a nonvolatile memory structure and a nonvolatile memory structure including a plurality of charge storage patterns, wherein an electrical...
29	7592663	Flash memory device utilizing nanocrystals embedded in polymer A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method...
30	7592662	Semiconductor device and semiconductor system A semiconductor device includes a semiconductor substrate, a first and second semiconductor regions formed on the semiconductor substrate insulated and separated from each other, a gate dielectric...
31	7592221	Semiconductor memory device and manufacturing method thereof Disclosed is a semiconductor memory device including a plurality of diffusion regions, select gates, word lines, and common diffusion regions. The plurality of diffusion regions are extended in the...
32	7589374	Semiconductor device and related fabrication method Embodiments of the invention provide a semiconductor device and a related method of fabricating a semiconductor device. In one embodiment, the invention provides a semiconductor device comprising a...
33	7589372	Nonvolatile memory device and method for fabricating the same A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory device includes a...
34	7589371	Semiconductor device and fabrication method therefor The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches ( 11 ) formed in a semiconductor substrate ( 10 ), first ONO films...
35	7586145	EEPROM flash memory device with jagged edge floating gate An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
36	7586144	Memory device with high dielectric constant gate dielectrics and metal floating gates A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a...
37	7586135	Multilevel integrated circuit devices and methods of forming the same Semiconductor devices including a plurality of semiconductor layers. A plurality of transistors are on each of the semiconductor layers. The transistors include gate lines and have source regions...
38	7585725	Use of dilute steam ambient for improvement of flash devices The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in...
39	7585724	FLASH memory device and method of manufacture A FLASH memory device is provided including a plurality of first floating gates formed over a gate oxide layer formed over a substrate, the first group of floating gates being formed using a...
40	7583534	Memory utilizing oxide-conductor nanolaminates One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel region...
41	7582926	Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor...
42	7582530	Managing floating gate-to-floating gate spacing to support scalability Formation techniques are utilized to increase the space or distance between floating gates of a memory array of floating gate transistors. In at least some embodiments, floating gates are first...
43	7580279	Flash memory cells with reduced distances between cell elements An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
44	7576440	Semiconductor chip having bond pads and multi-chip package A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is...
45	7575972	Method of manufacturing nonvolatile memory device A method of manufacturing a nonvolatile memory device is disclosed. The method includes the steps of forming a tunnel oxide layer, a first conductive layer for a floating gate, and a hard mask...
46	7573095	Memory cells with improved program/erase windows A semiconductor structure includes a memory cell in a first region and a logic MOS device in a second region of a semiconductor substrate. The memory cell includes a first gate electrode over the...
47	7573090	Nonvolatile semiconductor memory device and manufacturing method thereof A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with...
48	7573089	Non-volatile memory device Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
49	7570521	Low power flash memory devices A buried bipolar junction is provided in a floating gate transistor flash memory device. During a write operation electrons are injected into a surface depletion region of the memory cell...
50	7569880	Non-volatile electromechanical field effect devices and circuits using same and methods of forming same Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control...

Matches 1 - 50 out of 1626

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