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7358558 Flash memory device  
A floating gate of a flash memory device is formed in a moat formed in an isolation film. Therefore, an electric field applied between a control gate and a channel region upon cycling can be...
7358559 Bi-directional read/program non-volatile floating gate memory array, and method of formation  
A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has...
7358560 Flash memory device and method of manufacturing the same  
A non-volatile memory device includes a semiconductor substrate having an active region defined by isolation films that extend along a first direction. A control gate line extends along in a second...
7355237 Shield plate for limiting cross coupling between floating gates  
A memory system is disclosed that includes a set of non-volatile storage elements. Each of said non-volatile storage elements includes source/drain regions at opposite sides of a channel in a...
7355242 Semiconductor device  
A semiconductor device includes: a silicon substrate, having a main surface, in which trenches are formed; element isolation oxide films filling in trenches; a tunnel oxide film, formed on main...
7355241 Non-volatile memory  
A non-volatile memory including a substrate, a select gate, two floating gates, a control gate, and a doped region is described. The select gate is disposed on the substrate. The two floating gates...
7355236 Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof  
Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof. The non-volatile floating gate memory cell comprises a semiconductor substrate of a first...
7355239 Fabrication of semiconductor device exhibiting reduced dielectric loss in isolation trenches  
Improved methods of manufacturing semiconductor devices are provided to reduce dielectric loss in isolation trenches of the devices. In one example, a method of manufacturing a semiconductor device...
7355240 Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof  
A semiconductor product and a method for fabricating the semiconductor product employ a semiconductor substrate. The semiconductor substrate has a logic region having a logic device formed therein,...
7352024 Semiconductor storage device and semiconductor integrated circuit  
There is provided a semiconductor storage device capable of high integration. On a top surface of a semiconductor substrate, a plurality of device isolation regions ( 16 ) each extending and...
7348625 Semiconductor device and method of manufacturing the same  
An EEPROM cell includes first and second assist gates on opposite sides of a charge retaining insulating layer. Current in the EEPROM memory cell flows between inversion layers, which are created...
7348626 Method of making nonvolatile transistor pairs with shared control gate  
A pair of nonvolatile memory transistors are carved from a single polysilicon floating gate on an insulated substrate. After surrounding the poly floating gate with insulator, the poly is etched...
7345335 Semiconductor integrated circuit, booster circuitry, and non-volatile semiconductor memory device  
In a capacitor-containing semiconductor integrated circuit, a portion in which a plurality of capacitors are serially connected together is arranged so that at least part of the capacitors is...
7339230 Structure and method for making high density mosfet circuits with different height contact lines  
Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits include a contact line, a first gate layer...
7339226 Dual-level stacked flash memory cell with a MOSFET storage transistor  
The present invention is a dual-level flash memory cell design that stores 3 or more bits of information per transistor. The dual-level memory cell stores two lower bits in a first level and stores...
7339231 Semiconductor device and an integrated circuit card  
There is provided a technology capable of enhancing reliability in rewrite of storage information in a nonvolatile memory while checking an increase in area of a memory array thereof. With a memory...
7339242 NAND-type flash memory devices and fabrication methods thereof  
In an embodiment, a memory device includes a semiconductor substrate having cell active regions and a peripheral active region. Plugs, including bit line contact plugs, a common source line, a...
7335940 Flash memory and manufacturing method thereof  
A method for manufacturing flash memory is provided. A tunneling dielectric layer, a conductive layer and a patterned mask layer that exposes a portion of the conductive layer are formed on a...
7335937 Nonvolatile semiconductor memory  
In an EEPROM consisting of a NAND cell in which a plurality of memory cells are connected in series, the control gate voltage V read of the memory cell in a block selected by the data read...
7332767 High density memory devices having improved channel widths and cell size  
A memory device having decreased cell size and having transistors with increased channel widths. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a...
7332806 Thin, thermally enhanced molded package with leadframe having protruding region  
A semiconductor die package. It includes (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the...
7332766 Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate  
A semiconductor integrated circuit device includes first and second nonvolatile semiconductor memories. The first memory has first and second select transistors and first memory cell transistors....
7333367 Flash memory devices including multiple dummy cell array regions  
Methods for erasing an integrated circuit memory device having a cell array region that includes a main cell array region, a first dummy cell array region on a first side of the main cell array...
7332789 Isolation trenches for memory devices  
Methods and apparatus are provided. A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug...
7329578 Method of forming floating-gate tip for split-gate flash memory process  
A split-gate flash memory process for improving sharpness and height of a floating-gate tip has steps as follows. Using a dry etching process, a trench is formed in the first polysilicon layer...
7329571 Technique for providing multiple stress sources in NMOS and PMOS transistors  
By combining a plurality of stress inducing mechanisms in each of different types of transistors, a significant performance gain may be obtained, thereby providing enhanced flexibility in adjusting...
7326994 Logic compatible non-volatile memory cell  
A non-volatile memory cell and a method of manufacturing the same are provided. The non-volatile memory cell includes a semiconductor substrate, a floating gate over the semiconductor substrate, a...
7326993 Nonvolatile semiconductor memory and method for fabricating the same  
A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column...
7323744 Semiconductor device and fabrication method therefor  
A semiconductor device includes an ONO film ( 17 ) formed on a semiconductor substrate ( 15 ), a first gate ( 14 ), the first gate ( 14 ) formed on the ONO film ( 17 ), a source ( 10 ) and a drain...
7321511 Semiconductor device and method for controlling operation thereof  
A semiconductor device includes a semiconductor substrate, word lines, global bit lines, and inversion gates that form inversion layers serving as local bit lines in the semiconductor substrate....
7319618 Low-k spacer structure for flash memory  
A flash memory cell includes a silicon substrate having a main surface, a source region in a portion of the silicon substrate proximate the main surface and a drain region in a portion of the...
7316955 Method of manufacturing semiconductor device  
A flash memory device and method of fabricating the same, wherein a width at the top of a floating gate is narrower than that at the bottom of the floating gate. The area of the floating gate can...
7317223 Memory device and method of manufacturing the same  
In one embodiment, a memory device includes a semiconductor substrate, a first region formed in a predetermined region of the semiconductor substrate, and in which a plurality of memory transistors...
7315057 Split gate non-volatile memory devices and methods of forming same  
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased...
7315056 Semiconductor memory array of floating gate memory cells with program/erase and select gates  
A memory device, and method of making and operating the same, including a substrate of semiconductor material of a first conductivity type, first and second spaced apart regions in the substrate of...
7315058 Semiconductor memory device having a floating gate  
To prevent the extraction of electrons from the floating gate during a read operation. A semiconductor memory device comprises a selection gate 3 a provided in a first region on a substrate 1 ...
7314797 Semiconductor device and its manufacturing method  
A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a...
7312495 Split gate multi-bit memory cell  
A multi-bit memory cell ( 200 ) with a control gate ( 220 ) for controlling a middle portion of a channel region ( 208 ) provides improved operation including faster programming at smaller voltages...
7312498 Nonvolatile semiconductor memory cell and method of manufacturing the same  
A stacked-gate structure includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on a semiconductor...
7312491 Charge trapping semiconductor memory element with improved trapping dielectric  
A semiconductor memory element, which can be controlled via field effect, includes a semiconductor substrate of a first conduction type, a first doping region of a second conduction type provided...
7312503 Semiconductor memory device including MOS transistors each having a floating gate and a control gate  
A semiconductor memory device includes a plurality of memory cells, a plurality of local bit lines, a global bit line, a first switch element, and a holding circuit. The memory cell includes first...
7312123 Semiconductor device and a method of manufacturing the same  
A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality...
7309892 Semiconductor element and semiconductor memory device using the same  
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a...
7309891 Non-volatile and memory semiconductor integrated circuit  
A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first...
7307309 EEPROM with etched tunneling window  
A method forming a current path in a substrate ( 322 ) having a first conductivity type is disclosed. The method includes forming an impurity region ( 314 ) having a second conductivity type and...
7307296 Flash memory and fabrication method thereof  
A flash memory comprises a substrate, control gates, doped regions, an isolation layer, isolation structures, floating gates, tunneling dielectric layers and inter-gate dielectric layers. The...
7307879 Nonvolatile memory device, and its manufacturing method  
On a channel region enclosed by a pair of diffusion layers 13 A, 13 B, a first insulating layer 15 , a charge accumulative layer 17 , and a second insulating layer 19 are stacked up in this...
7303950 Semiconductor device, method of manufacturing same and method of designing same  
A partial oxide film ( 31 ) with well regions formed therebeneath isolates transistor formation regions in an SOI layer ( 3 ) from each other. A p-type well region ( 11 ) is formed beneath part of...
7301193 Structure and method for low Vss resistance and reduced DIBL in a floating gate memory cell  
According to one exemplary embodiment, a floating gate memory cell comprises a stacked gate structure situated on a substrate and situated over a channel region in the substrate. The floating gate...
7301195 Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same  
A semiconductor memory device comprises a substrate; a semiconductor layer of a first conductive type isolated from the substrate by an insulator layer; a memory transistor having a gate electrode,...
Matches 251 - 300 out of 1644 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >