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7592664 Nonvolatile memory structure and method of forming the same  
Example embodiments are directed to a method of forming a nonvolatile memory structure and a nonvolatile memory structure including a plurality of charge storage patterns, wherein an electrical...
7589374 Semiconductor device and related fabrication method  
Embodiments of the invention provide a semiconductor device and a related method of fabricating a semiconductor device. In one embodiment, the invention provides a semiconductor device comprising a...
7589371 Semiconductor device and fabrication method therefor  
The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches ( 11 ) formed in a semiconductor substrate ( 10 ), first ONO films...
7589372 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory device includes a...
7585724 FLASH memory device and method of manufacture  
A FLASH memory device is provided including a plurality of first floating gates formed over a gate oxide layer formed over a substrate, the first group of floating gates being formed using a...
7586144 Memory device with high dielectric constant gate dielectrics and metal floating gates  
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a...
7586145 EEPROM flash memory device with jagged edge floating gate  
An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
7585725 Use of dilute steam ambient for improvement of flash devices  
The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in...
7586135 Multilevel integrated circuit devices and methods of forming the same  
Semiconductor devices including a plurality of semiconductor layers. A plurality of transistors are on each of the semiconductor layers. The transistors include gate lines and have source regions...
7582926 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus  
The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor...
7582530 Managing floating gate-to-floating gate spacing to support scalability  
Formation techniques are utilized to increase the space or distance between floating gates of a memory array of floating gate transistors. In at least some embodiments, floating gates are first...
7583534 Memory utilizing oxide-conductor nanolaminates  
One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel region...
7580279 Flash memory cells with reduced distances between cell elements  
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
7575972 Method of manufacturing nonvolatile memory device  
A method of manufacturing a nonvolatile memory device is disclosed. The method includes the steps of forming a tunnel oxide layer, a first conductive layer for a floating gate, and a hard mask...
7576440 Semiconductor chip having bond pads and multi-chip package  
A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is...
7573095 Memory cells with improved program/erase windows  
A semiconductor structure includes a memory cell in a first region and a logic MOS device in a second region of a semiconductor substrate. The memory cell includes a first gate electrode over the...
7573090 Nonvolatile semiconductor memory device and manufacturing method thereof  
A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with...
7573089 Non-volatile memory device  
Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
7570521 Low power flash memory devices  
A buried bipolar junction is provided in a floating gate transistor flash memory device. During a write operation electrons are injected into a surface depletion region of the memory cell...
7569880 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same  
Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control...
7566927 Flash memory device  
A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line...
7566929 Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof  
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a...
7566928 Byte-operational nonvolatile semiconductor memory device  
Byte-operational nonvolatile semiconductor memory devices are capable of erasing stored data one byte at a time. A byte memory cell may include a memory cell array of 1-byte memory transistors. The...
7564091 Memory device and methods for its fabrication  
A semiconductor memory device and a method for its fabrication are provided. In accordance with one embodiment of the invention the method comprises the steps of forming a gate insulator and a gate...
7564092 Flash memory device having a split gate  
A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially...
7564093 Semiconductor device  
A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM...
7564085 Mechanical memory device and method of manufacturing the same  
A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a...
7560765 Nonvolatile memory device and method of fabricating the same  
A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the...
7560764 SONOS memory device having curved surface and method for fabricating the same  
A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and...
7560763 Semiconductor device and method for fabricating the same  
A semiconductor device, includes a semiconductor substrate; a first insulating layer formed on the semiconductor substrate; a first electrode formed on the first insulating layer; an interlayer...
7560766 Nonvolatile semiconductor memory  
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the...
7560767 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device according to an example of the present invention includes source/drain diffusion layers, a first insulation film on a channel between the source/drain...
7557404 Nonvolatile memory devices and methods of forming the same  
In a nonvolatile memory device and a method of fabricating the same, the nonvolatile memory device may include a semiconductor substrate having a device isolation layer defining an active region, a...
7557401 Semiconductor device and method of manufacturing the same  
A semiconductor device includes an element isolation insulating film adjacent to an active area, a gate insulating film formed on a semiconductor substrate in the active area, paired gate...
7557403 Double gate transistors having at least two polysilicon patterns on a thin body used as active region and methods of forming the same  
Double gate transistors having at least two polysilicon patterns on a thin body used as an active region and methods of forming the same are provided. Embodiments of the transistors and methods...
7553721 Flash memory devices and methods of fabricating the same  
Flash memory devices and methods for fabricating the same. In one example embodiment, a method of fabricating a flash memory includes various acts. First, a tunnel oxide layer is formed on an...
7554150 Non-volatile memory device and method of manufacturing the same  
A non-volatile memory device includes isolation layers, a cell trench, a floating gate, a common source region and a word line. The isolation layers define an active region of a substrate. The cell...
7553728 Method of fabricating a non-volatile semiconductor memory  
An non-volatile semiconductor memory having a linear arrangement of a plurality of memory cell transistors, includes: a first semiconductor layer having a first conductivity type; a second...
7554149 Flash memory devices comprising pillar patterns and methods of fabricating the same  
Flash memory devices include pillar patterns formed between selected pairs of floating gates and control gate extensions that penetrate between selected pairs of floating gates are provided....
7554840 Semiconductor device and fabrication thereof  
A memory device is disclosed. A floating gate is disposed overlying a substrate. A tunneling dielectric layer is interposed between the floating gate and the substrate. An inter poly dielectric...
7550800 Method and apparatus transporting charges in semiconductor device and semiconductor memory device  
A conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function,...
7550802 Nonvolatile semiconductor memory device and manufacturing process of the same  
A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an...
7547941 NAND non-volatile two-bit memory and fabrication method  
A NAND non-volatile two-bit memory cell comprises a cell stack and two select stacks disposed on an active area of a substrate. Each select stack is respectively disposed on a side of the cell...
7547599 Multi-state memory cell  
Floating-gate memory cells having a split floating gate facilitate decreased sensitivity to localized defects in the tunnel dielectric layer and/or the intergate dielectric layer. Such memory cells...
7547943 Non-volatile memory devices that include a selection transistor having a recessed channel and methods of fabricating the same  
A NAND-type non-volatile memory device includes a substrate and a device isolation layer disposed on the substrate to define an active region. First and second selection transistors are disposed in...
7547940 Non-volatile memory devices suitable for LCD driver applications  
Non-volatile memory devices according to embodiments of the present invention include an EEPROM transistor in a first portion of a semiconductor substrate, an access transistor in a second portion...
7547942 Nonvolatile memory devices and methods of fabricating the same  
A nonvolatile memory device includes a semiconductor substrate including a cell region and a peripheral circuit region, a cell gate on the cell region, and a peripheral circuit gate on the...
7547977 Semiconductor chip having bond pads  
In one embodiment, a semiconductor chip has one or more peripheral bond pads. The semiconductor chip comprises a semiconductor substrate having a cell region and a peripheral circuit region...
7547601 Low power electrically alterable nonvolatile memory cells and arrays  
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first...
7544990 Scalable integrated logic and non-volatile memory  
A scalable, logic transistor has a pair of doped regions for the drain and source. A gate insulator layer is formed over the substrate and between the drain and source regions. A gate stack is...
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