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7622762 Nonvolatile semiconductor memory and method for fabricating the same  
A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column...
7622761 Non-volatile memory device and method of manufacturing the same  
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to...
7618863 Method of fabricating flash memory device with increased coupling ratio  
A method of fabricating a flash memory which increases a coupling ratio between a floating gate and a control gate in a cell. The method comprises sequentially forming a tunnel oxide film, and...
7618861 Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions  
Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films...
7615820 Self-aligned trenches with grown dielectric for high coupling ratio in semiconductor devices  
Self-aligned trench filling to isolate active regions in high-density integrated circuits is provided. A deep, narrow trench is etched into a substrate between active regions. The trench is filled...
7615819 Semiconductor device  
A semiconductor device includes a semiconductor substrate, an insulating film formed above an upper surface of the substrate and including a contact hole penetrating the insulating film, a wiring...
7615818 Semiconductor device and method of manufacturing the same  
The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate,...
7615446 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof  
In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor...
7612411 Dual-gate device and method  
A memory circuit having dual-gate memory cells and a method for fabricating such a memory circuit are disclosed. The dual-gate memory cells each include a memory device and an access device sharing...
7612403 Low power non-volatile memory and gate stack  
Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells...
7612401 Non-volatile memory cell  
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
7611946 Method of fabricating a non-volatile memory device  
A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a...
7608882 Split-gate non-volatile memory  
A split-gate non-volatile memory cell is described, including a substrate, a charge-trapping layer on the substrate, a split gate on the charge-trapping layer, and a source/drain in the substrate...
7605430 Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same  
A nonvolatile memory device includes a semiconductor substrate and a device isolation layer on the semiconductor substrate. A fin-shaped active region is formed between portions of the device...
7605420 Semiconductor tunneling magneto resistance device and method of manufacturing the same  
The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR...
7605419 Flash memory device and fabricating method thereof  
A flash memory device includes a floating gate formed on a substrate, sidewall gates formed on sidewalls of the floating gate, an interlayer insulating layer formed the floating gate and the...
7605044 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or overa gate electrode and a...
7602029 Configuration and method of manufacturing the one-time programmable (OTP) memory cells  
This invention discloses an one time programmable (OTP) memory. The OTP memory includes a first and a second metal oxide semiconductor (MOS) transistors connected in parallel and controlled by a...
7598561 NOR flash memory  
Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with...
7598560 Hetero-bimos injection process for non-volatile flash memory  
A hetero-BiMOS injection system comprises a MOSFET transistor formed on a substrate and a hetero-bipolar transistor formed within the substrate. The bipolar transistor can be used to inject charge...
7595532 Semiconductor memory devices and methods of forming the same  
A semiconductor memory device includes a semiconductor substrate including an insulating layer, a charge storage region of a first conductivity type on the insulating layer, and an insulating film...
7595522 Nonvolatile semiconductor memory  
According to the invention, there is provided a nonvolatile semiconductor memory having: a floating gate electrode formed on a gate insulating film on an element region isolated by an...
7590004 Nonvolatile semiconductor memory having a plurality of interconnect layers  
A nonvolatile semiconductor memory includes a memory cell array including horizontally aligned memory cell columns, each including vertically arranged memory cell transistors and select transistors...
7589376 Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same  
An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation...
7589373 Semiconductor device  
The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
7589372 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory device includes a...
7589371 Semiconductor device and fabrication method therefor  
The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches ( 11 ) formed in a semiconductor substrate ( 10 ), first ONO films...
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same  
A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed...
7586145 EEPROM flash memory device with jagged edge floating gate  
An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion...
7586144 Memory device with high dielectric constant gate dielectrics and metal floating gates  
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator comprising a metal oxide formed over a...
7583534 Memory utilizing oxide-conductor nanolaminates  
One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel region...
7582927 Flash EEPROM cell and method of fabricating the same  
A semiconductor device including a memory cell having a memory transistor and select gate transistor and a peripheral transistor is disclosed. The memory transistor has a stacked gate structure...
7582926 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus  
The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor...
7582526 Method for manufacturing semiconductor device  
A method for manufacturing a plurality of memory devices and a plurality of high voltage devices on a substrate are provided. The substrate has a memory region and a high voltage region. The method...
7580279 Flash memory cells with reduced distances between cell elements  
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
7579646 Flash memory with deep quantum well and high-K dielectric  
A flash memory cell includes a substrate and a gate structure formed on the substrate. The gate structure includes a tunneling layer over the substrate, a storage layer over the tunneling layer, a...
7579645 Semiconductor device having non-volatile memory cell  
A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor...
7573095 Memory cells with improved program/erase windows  
A semiconductor structure includes a memory cell in a first region and a logic MOS device in a second region of a semiconductor substrate. The memory cell includes a first gate electrode over the...
7573089 Non-volatile memory device  
Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
7572700 EEPROM and method of manufacturing the same  
An EEPROM includes a substrate, a first semiconductor layer and a second semiconductor layer formed on the substrate. The first semiconductor layer is isolated from the second semiconductor layer...
7569882 Non-volatile multibit memory cell and method of manufacturing thereof  
One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second...
7569879 Nonvolatile semiconductor memory device and manufacturing method thereof  
A nonvolatile semiconductor memory device includes a semiconductor substrate, plural semiconductor columns arranged in a matrix form on the substrate, plural first conductive areas zonally formed...
7569454 Semiconductor device manufacturing method using strip-like gate electrode hard masks for ion implantation  
A method of manufacturing a semiconductor device, comprises forming a gate insulating film on a surface of a semiconductor substrate, forming a first group of at least one strip-like gate electrode...
7569284 Incorporation of nitrogen into high k dielectric film  
A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and...
7566928 Byte-operational nonvolatile semiconductor memory device  
Byte-operational nonvolatile semiconductor memory devices are capable of erasing stored data one byte at a time. A byte memory cell may include a memory cell array of 1-byte memory transistors. The...
7566927 Flash memory device  
A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line...
7566615 Methods of fabricating scalable two transistor memory devices  
A memory device includes a semiconductor substrate, a first gate insulator on a first portion of a semiconductor substrate, a storage node on the first gate insulator, a tunnel junction barrier on...
7564093 Semiconductor device  
A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM...
7564092 Flash memory device having a split gate  
A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially...
7564091 Memory device and methods for its fabrication  
A semiconductor memory device and a method for its fabrication are provided. In accordance with one embodiment of the invention the method comprises the steps of forming a gate insulator and a gate...
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