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9040971 Thin film transistor and organic light emitting pixel having the same  
A thin film transistor (TFT) that includes a control electrode, a semiconductor pattern, a first input electrode, a second input electrode, and an output electrode is disclosed. in one aspect, the...
9041088 Non-volatile memory devices having air gaps and methods of manufacturing the same  
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate...
9041090 Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metal  
Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells are disclosed. One such string of memory cells can be formed at least partially in a stack of...
9041092 Semiconductor device and method for producing the same  
A semiconductor device includes a pillar-shaped silicon layer including a first diffusion layer, a channel region, and a second diffusion layer formed in that order from the silicon substrate...
9035372 Nonvolatile memory device, fabrication method thereof and memory system comprising the same  
A nonvolatile memory device includes (i) a semiconductor substrate, (ii) a channel formed over the substrate and extending in a first direction, (iii) a first NAND string arranged over a lower...
9035369 Semiconductor structure and manufacturing method of the same  
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a first stacked structure, and a first conductive layer. The first...
9035370 Semiconductor device  
A semiconductor device, includes: a semiconductor substrate; a first conductivity type well and a second conductivity type well; a first active area; a second active area; a first well contact...
9029938 Semiconductor memory device and method for manufacturing same  
According to one embodiment, the stacked body includes a plurality of electrode layers and a plurality of insulating layers alternately stacked on the substrate. The plurality of contact parts are...
9029936 Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof  
A memory device includes a semiconductor channel, a tunnel dielectric layer located over the semiconductor channel, a first charge trap including a plurality of electrically conductive nanodots...
9029935 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second...
9024425 Three-dimensional memory comprising an integrated intermediate-circuit die  
The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least an integrated intermediate-circuit die comprising both a...
9018696 Nonvolatile semiconductor memory device and method of manufacturing the same  
A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive...
9012320 Three-dimensional semiconductor memory devices and methods of fabricating the same  
Example embodiments relate to a three-dimensional semiconductor memory device including an electrode structure on a substrate, the electrode structure including at least one conductive pattern on...
9012968 Semiconductor non-volatile memory device  
A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a...
9006817 Semiconductor device  
A semiconductor device comprising four semiconductor pillars extending in a direction perpendicular to a substrate, a connection channel formed on the substrate and connected to one ends of the...
9006884 Three dimensional semiconductor device including pads  
A semiconductor device includes a substrate in which a cell region and a contact region are defined, a pad structure including a plurality of first conductive layers and a plurality of first...
8999838 Semiconductor devices and methods of manufacturing the same  
A method for patterning a multi-layer film in a semiconductor device is provided. The semiconductor device comprises a substrate and a multi-layer film on the substrate. The multi-layer film...
9000509 Three dimensional pipe gate nonvolatile memory device  
A nonvolatile memory device includes a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate;...
8999828 Method and device for a split-gate flash memory with an extended word gate below a channel region  
A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with...
9000507 Method and system for recovering from transistor aging using heating  
A mechanism is provided for extending useable lifetimes of semiconductor devices that are subject to trapped charge carriers in a gate dielectric. Embodiments of the present invention provide heat...
8994088 Semiconductor storage device and manufacturing method thereof  
A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A memory cell array includes a plurality of memory cells provided on the semiconductor...
8994087 Semiconductor device and method for manufacturing the same  
According to one embodiment, a semiconductor device includes a substrate and a first transistor. The substrate has a major surface. The first transistor is provided on the major surface. The first...
8994095 Semiconductor memory device with a buried drain and its memory array  
A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (107); one drain region (108) of a first doping type; two source regions (101a, 101b)...
8995193 NAND memory constructions and methods of forming NAND memory constructions  
Some embodiments include NAND memory constructions. The constructions may contain semiconductor material pillars extending upwardly between dielectric regions, with individual pillars having a...
8995188 Sharing support circuitry in a memory  
A memory device, system, and method for operation of a memory device. In one such memory device, the memory device comprises a plurality of strings of memory cells. A plurality of drain select...
8987801 Memory cells having a plurality of control gates and memory cells having a control gate and a shield  
Various embodiments comprise apparatuses having a number of memory cells. In one such apparatus, each cell has a plurality of control gates. For example, each of two control gates is adjacent a...
8980731 Methods of forming a semiconductor device  
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening...
8981455 Semiconductor memory device and manufacturing method thereof  
In accordance with an embodiment, a semiconductor memory device includes a substrate with a semiconductor layer and memory cells on the semiconductor layer. Each memory cell includes a laminated...
8981449 Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip  
A method of forming a semiconductor device that includes providing a logic device on a semiconductor on insulating layer of a transfer substrate. The transfer substrate may further include a...
8981331 Memory cells having storage elements that share material layers with steering elements and methods of forming the same  
In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack...
8975683 Nonvolatile pipe gate memory device  
A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell...
8975684 Methods of forming non-volatile memory devices having air gaps  
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate...
8969845 Memory cells having storage elements that share material layers with steering elements and methods of forming the same  
A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The...
8969939 Semiconductor device and method of fabricating the same  
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge...
8969941 Semiconductor device and method for manufacturing same  
According to an embodiment, a semiconductor device, includes a semiconductor substrate, first and second transistors. The first transistor includes a first insulating film provided on the...
8969947 Vertical memory devices with quantum-dot charge storage cells  
A memory device includes a substrate, a semiconductor column extending perpendicularly from the substrate and a plurality of spaced-apart charge storage cells disposed along a sidewall of the...
8969940 Method of gate strapping in split-gate memory cell with inlaid gate  
A process integration is disclosed for fabricating non-volatile memory (NVM) cells having patterned select gates (211, 213), charge storage layers (219), inlaid control gates (223, 224), and...
8963220 Shallow trench isolation for a memory  
In some embodiments, a gate structure with a spacer on its side may be used as a mask o form self-aligned trenches in microelectronic memory, such as a flash memory. A first portion of the gate...
8963226 Semiconductor device with gate electrodes  
A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first...
8963227 Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same  
Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second...
8957469 Semiconductor storage device and manufacturing method of semiconductor storage device  
A semiconductor storage device according to an embodiment comprises a memory cell string in which a plurality of memory cells each having a gate are serially connected to each other. A selective...
8956943 Method for manufacturing non-volatile memory  
A method for manufacturing a non-volatile memory is disclosed. A gate structure is formed on a substrate and includes a gate dielectric layer and a gate conductive layer. The gate dielectric layer...
8951865 Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof  
Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells...
8952438 Three-dimensional microelectronic devices including horizontal and vertical patterns  
A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a...
8952444 Semiconductor storage device and manufacturing method thereof  
A semiconductor storage device according to an embodiment comprises active areas on a semiconductor substrate. An element isolation is arranged between the active areas and filled by an insulating...
8945997 Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same  
Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit having a split-gate nonvolatile memory device includes...
8946665 Semiconductor devices and methods of fabricating the same  
A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers...
8946810 Ultrahigh density vertical NAND memory device  
Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a...
8946806 Memory cell with decoupled channels  
A device having a substrate prepared with a memory cell region having a memory cell is disclosed. The memory cell includes an access transistor and a storage transistor. The access transistor...
8946808 Semiconductor device and method of manufacturing the same  
A semiconductor device includes word lines and interlayer insulating layers alternately stacked over a substrate, vertical channel layers protruding from the substrate and passing through the word...