Matches 351 - 400 out of 1034 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
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7110297 Semiconductor storage device and mobile electronic apparatus  
A semiconductor storage device is provided, which comprises a memory array comprising memory elements. Each memory element comprises a gate electrode, a channel region, first and second diffusion...
7109547 Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration  
First and second semiconductor regions are formed apart from each other on a semiconductor body. A stacked gate is formed on the semiconductor body between the first and second semiconductor...
7105406 Self aligned non-volatile memory cell and process for fabrication  
Floating gate structures are disclosed that have a projection that extends away from the surface of a substrate. This projection may provide the floating gate with increased surface area for...
7105888 Nonvolatile semiconductor memory device and method of manufacturing same  
A first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and an oxidation inhibitor film are successively deposited on a surface of a semiconductor...
7102190 Flash memory cell with a unique split programming channel and reading channel  
A structure for flash memory cells is disclosed, Isolation regions are formed in a semiconductor region separating cells and also separating programming bit line channel regions of a cell from...
7098504 Nonvolatile semiconductor storage device and production method therefor  
There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of...
7095075 Apparatus and method for split transistor memory having improved endurance  
The present invention includes floating gate transistor structures used in non-volatile memory devices such as flash memory devices. In one embodiment, a system includes a CPU and a memory device...
7095074 Semiconductor device with reduced memory leakage current  
Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with...
7095085 Nonvolatile semiconductor memory device and method for manufacturing the same  
A nonvolatile semiconductor memory device includes erasable and programmable memory cell transistors, a selection transistor, a peripheral transistor, first post-oxidation films each provided on a...
7095077 Semiconductor memory having two charge storage sections  
A semiconductor memory includes: a p-type semiconductor (p-type semiconductor film on a substrate, a p-type well region in a semiconductor substrate, or an insulator); a gate insulating film formed...
7091549 Programmable memory devices supported by semiconductor substrates  
The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting...
7087489 Method of fabricating trap type nonvolatile memory device  
A method of forming a trap type nonvolatile memory device is disclosed. The method includes forming a cell gate insulating layer on a semiconductor substrate. The semiconductor substrate includes a...
7087953 Unified non-volatile memory device and method for integrating NOR and NAND-type flash memory and EEPROM device on a single substrate  
A method for making a unified non-volatile memory (NVM) comprised of a NOR-type flash memory, a NAND-type flash memory, and a 3-transistor EEPROM integrated on the same chip is achieved. This...
7087950 Flash memory cell, flash memory device and manufacturing method thereof  
The present invention relates to a flash memory cell comprising a silicon substrate having an active region comprising a channel region and source-/drain-regions, the active region comprising a...
7084452 Semiconductor device having one-time programmable ROM and method of fabricating the same  
A semiconductor device with a one-time programmable (OTP) ROM disposed over a semiconductor substrate including a memory cell area and a peripheral circuit area includes a MOS transistor and an OTP...
7084440 Integrated circuit layout and a semiconductor device manufactured using the same  
An integrated circuit layout and a semiconductor device manufactured using the same are provided. According to one embodiment, a semiconductor device has a substrate and a plurality of bar type...
7081651 Non-volatile memory device with protruding charge storage layer and method of fabricating the same  
A non-volatile memory device includes a tunnel oxide layer, a charge storage layer, a blocking insulating layer, and a gate electrode that are sequentially stacked, as well as an impurity diffusion...
7081381 Flash memory cell and the method of making separate sidewall oxidation  
A process and product for making integrated circuits with dense logic and/or linear regions and dense memory regions is disclosed. On a common substrate, a dual hard mask process separately forms...
7078769 Nonvolatile memory and manufacturing method thereof  
Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory...
7078349 Method to form self-aligned floating gate to diffusion structures in flash  
A self-aligned conductive region to active region structure is disclosed in which parallel active regions of a semiconductor region of a substrate, which extends to a surface, are separated by STI...
7078776 Low threshold voltage semiconductor device  
A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the...
7075139 Method of manufacturing semiconductor device  
Described is a semiconductor device having a silicon oxide (SiO 2 ) film into which nitrogen atoms, in a range between approximately 2×10 20 atoms/cm 3 or more and 2×10 21 atoms/cm 3 or less,...
7075142 Cell arrays of memory devices having extended source strapping regions  
A cell array of a flash memory device includes extended source strapping regions. The cell array includes a device isolation layer and active regions. The device isolation layer is formed in a...
7075820 Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node  
A semiconductor memory device includes a plurality of MIS transistors arranged at intersections of first word lines and bit lines formed on an SOI substrate and each configuring a memory cell. Each...
7075143 Apparatus and method for high sensitivity read operation  
A nonvolatile semiconductor memory device enabling a high sensitivity read operation by a low voltage, provided with a gate insulating film comprised of a bottom insulating film, a charge storing...
7071512 Non-volatile semiconductor memory device  
A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of...
7072223 Asymmetric band-gap engineered nonvolatile memory device  
Systems and methods are provided for nonvolatile memory devices that incorporate a band-gap engineered gate stack with asymmetric tunnel barriers. One embodiment of a memory device includes first...
7067873 Charge trapping device  
A silicon based semiconductor device and method uses charge trapping to alter a density of carriers available in a channel of a field effect transistor (FET) for conduction. The charge trapping...
7064377 Flash memory cell with buried floating gate and method for operating such a flash memory cell  
A programmable read-only memory cell and method of operating the programmable read-only memory cell. In one embodiment, the programmable read-only memory cell comprises a floating gate arranged in...
7064375 Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereof  
A semiconductor memory device, including a first memory cell having a first gate electrode, a first diffusion layer, and a second diffusion layer; a first contact layer connected to the first...
7061069 Semiconductor device having two-layered charge storage electrode  
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate...
7061046 Non-volatile semiconductor memory device  
Bitline conductor tracks are arranged parallel to one another and electrically insulated from a substrate provided with a basic doping. A memory layer sequence, especially a charge-trapping layer...
7057230 Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed  
A semiconductor device includes a plurality of nonvolatile memory cells ( 1 ). Each of the nonvolatile memory cells comprises a MOS type first transistor section ( 3 ) used for information storage,...
7057228 Memory array with byte-alterable capability  
This invention provides a memory array and it support signals and a method for byte access for programming, erasing and reading memory cells. The advantage of this array and method is the ability...
7053437 Semiconductor memory device, semiconductor device and methods of manufacturing them, portable electronic equipment, and IC card  
A semiconductor memory device including memory cells, each memory cell including: a gate insulating film formed on a semiconductor substrate; a gate electrode formed on the gate insulating film; a...
7053438 Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates  
In fabrication of a nonvolatile memory cell having two floating gates, one or more peripheral transistor gates are formed from the same layer ( 140 ) as the select gate. The gate dielectric ( 130 )...
7049651 Charge-trapping memory device including high permittivity strips  
The charge-trapping layer comprises two strips above the source and drain junctions. The thicknesses of the charge-trapping layer and the gate dielectric are chosen to facilitate...
7049652 Pillar cell flash memory technology  
An array of a pillar-type nonvolatile memory cells ( 803 ) has each memory cell isolated from adjacent memory cells by a trench ( 810 ). Each memory cell is formed by a stacking process layers on a...
7046552 Flash memory with enhanced program and erase coupling and process of fabricating the same  
Self-aligned split-gate flash memory cell array and process of fabrication in which erase and select gates are positioned on opposite sides of stacked floating and control gates, with source...
7045845 Self-aligned vertical gate semiconductor device  
A transistor ( 10 ) is formed in a semiconductor substrate ( 12 ) whose top surface ( 48 ) is formed with a pedestal structure ( 24 ). A conductive material ( 40 ) is disposed along a side surface...
7045418 Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor  
The present invention provides a semiconductor device ( 200 ), a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor...
7042043 Programmable array logic or memory devices with asymmetrical tunnel barriers  
Structures and methods for programmable array type logic and/or memory devices with asymmetrical low tunnel barrier intergate insulators are provided. The programmable array type logic and/or...
7037782 Semiconductor memory having storage cells storing multiple bits and a method of manufacturing the same  
A multiple-bit cell transistor includes a P type silicon substrate, a gate insulation layer, a pair of N type source/drain regions, a pair of tunnel insulation layers, and a pair of floating gates....
7038291 Semiconductor device and method of fabricating the same  
Provided is a semiconductor device and a method of fabricating the semiconductor device, in which electric characteristics of a gate insulating film thereof in the vicinity of an element isolation...
7034355 Nonvolatile semiconductor storage and its manufacturing method  
To achieve a higher operating speed, higher reliability, and lower power consumption by reducing the thickness of an inter-poly silicon insulator film between a floating gate and a control gate of...
7034354 Semiconductor structure with lining layer partially etched on sidewall of the gate  
A semiconductor structure with partially etched gate and method of fabricating the same. A semiconductor structure with a single-sided or dual-sided partially etched gate comprises a gate...
7030020 Method to shrink cell size in a split gate flash  
A new method to form MOS gates in an integrated circuit device is achieved. The method comprises forming a dielectric layer overlying a substrate. A polysilicon layer is formed overlying the...
7026682 Non-volatile memory device with enlarged trapping layer  
Methods for making a nonvolatile memory device, such as an NROM device that has an oxide-nitride-oxide layer beneath at least one word line structure, are disclosed. The oxide-nitride-oxide layer...
7026681 Flash memory device and fabrication process thereof, method of forming a dielectric film  
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen...
7026685 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same  
Semiconductor devices including a non-volatile memory transistor and methods for manufacturing such semiconductor devices are described. One semiconductor device may include a silicon substrate ...
Matches 351 - 400 out of 1034 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >