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7629221 Method for forming capacitor of semiconductor device  
Disclosed is a method for forming a capacitor of a semiconductor device. In such a method, a mold insulating layer is formed on an insulating interlayer provided with a storage node plug, and the...
7602002 Semiconductor device with DRAM portion having capacitor-over-bit-line structure and logic portion  
The present invention provides a semiconductor device comprising: a semiconductor substrate having a DRAM portion and a Logic portion; a first transistor in said DRAM portion; a second transistor...
7598559 Semiconductor storage device, manufacturing method therefor, and portable electronic equipment  
A semiconductor storage device has a semiconductor layer having a first conductivity type region and two second conductivity type regions separated from each other by the first conductivity type...
7592661 CMOS embedded high voltage transistor  
A circuit having a high voltage, drain-extended (DE) metal-oxide-semiconductor (MOS) transistor and method for fabricating the same are provided. Generally, the circuit includes an n-channel (NMOS)...
7576381 Memory structure and fabricating method thereof  
A memory structure including a substrate, a first dielectric layer, a first conducting layer, a second conducting layer, a second dielectric layer, a spacer and a doped region is provided. The...
7573087 Interconnect line selectively isolated from an underlying contact plug  
A means for selectively electrically connecting an electrical interconnect line, such as a bit line of a memory cell, with an associated contact stud and electrically isolating the interconnect...
7557399 Metal-insulator-metal capacitors  
A metal-insulator-metal (MIM) capacitor is provided. The bottom electrode of the MIM capacitor is electrically connected to a connection node. The connection node may be, for example, a contact...
7547937 Semiconductor memory device and method for manufacturing the same  
A semiconductor memory device includes a first word-line, a first non-inverted bit-line, a first inverted bit-line, a first global interconnection layer, a first memory capacitor having a first...
7544988 Semiconductor integrated circuit device and a method of manufacturing the same  
The memory cell transistor includes, in a first well region, a pair of memory electrodes, one of which serves as source electrode and the other serves as drain electrode and a channel region...
7541633 Phase-change RAM and method for fabricating the same  
A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage...
7541239 Selective spacer formation on transistors of different classes on the same device  
A method of selectively forming a spacer on a first class of transistors and devices formed by such methods. The method can include depositing a conformal first deposition layer on a substrate with...
7521746 Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same  
A ferroelectric random access memory (FRAM) includes a semiconductor substrate and an interlayer insulating layer on the substrate. A diffusion preventive layer is on the interlayer insulating...
7518181 Semiconductor memory device and methods of manufacturing and operating the same  
A semiconductor memory device and methods of manufacturing and operating the same may be provided. The semiconductor memory device may include a substrate, at least a pair of fins protruding from...
7518175 Semiconductor memory device and method for fabricating the same  
The present invention relates to a semiconductor memory device and a method for fabricating the same. The semiconductor memory device, including: a plurality of gate structures formed on a...
7511328 Semiconductor device having raised cell landing pad and method of fabricating the same  
A semiconductor device and method of manufacturing the same having pad extending parts, the semiconductor device includes an isolation layer that defines an active region and a gate electrode which...
7508022 Semiconductor device including a TCAM having a storage element formed with a DRAM  
In order to improve the discharging speed of potential from a match line, a semiconductor device includes a capacitor, a memory transistor having a source/drain region connected to a storage node...
7485915 Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element  
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first...
7474002 Semiconductor device having dielectric film having aperture portion  
In the semiconductor device having a structure in which a plurality of layers are built-up by layers made of different materials or layers including various formed patterns, it is an object to...
7473652 Organic polymers, electronic devices, and methods  
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R 1 is independently H, an aryl group, Cl, Br, I, or an organic group...
7459741 Semiconductor memory device  
A semiconductor memory device excellent in data holding characteristics even when a cell area is reduced is disclosed. According to one aspect of the present invention, a semiconductor memory...
7456459 Design of low inductance embedded capacitor layer connections  
The present invention discloses capacitors having via connections and electrodes designed such that they provide a low inductance path, thus reducing needed capacitance, while enabling the use of...
7453116 Semiconductor memory device and method of fabricating the same  
A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen...
7427793 Sacrificial self-aligned interconnect structure  
A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material to the side of an active region location and underlying a semiconductor device of a...
7420237 Capacitor element  
A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a...
7414297 Capacitor constructions  
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps...
7411836 Method of operating non-volatile memory  
A method of operating a non-volatile memory comprising a substrate, a gate, a charge-trapping layer, a source region and a drain region is provided. The charge-trapping layer close to the source...
7408218 Semiconductor device having plural dram memory cells and a logic circuit  
A memory cell capacitor (C 3 ) of a DRAM is formed by use of a MIM capacitor which uses as its electrode a metal wiring line of the same layer (M 3 ) as metal wiring lines within a logic circuit...
7405439 Memory cell structure and semiconductor memory device  
A memory cell structure comprises a first memory capacitor that is arranged in a first local area, and includes a first lower electrode, a first upper electrode, and a first dielectric oxide film...
7382014 Semiconductor device with capacitor suppressing leak current  
A semiconductor device with a capacitor includes a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer including more than one polycrystalline...
7378739 Capacitor and light emitting display using the same  
A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric...
7375376 Semiconductor display device and method of manufacturing the same  
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
7355236 Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof  
Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof. The non-volatile floating gate memory cell comprises a semiconductor substrate of a first...
7339222 Method for determining wordline critical dimension in a memory array and related structure  
According to one exemplary embodiment, a method for fabricating a memory array includes forming a number of trenches in a substrate, where the trenches determine a number of wordline regions in the...
7329918 Semiconductor memory device including storage nodes and resistors and method of manufacturing the same  
A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments...
7323708 Phase change memory devices having phase change area in porous dielectric layer  
A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous...
7321150 Semiconductor device precursor structures to a double-sided capacitor or a contact  
A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is formed along sidewalls of at least...
7319254 Semiconductor memory device having resistor and method of fabricating the same  
A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form...
7294880 Semiconductor non-volatile memory cell with a plurality of charge storage regions  
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further...
7295461 Memory device with a self-assembled polymer film and method of making the same  
A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces...
7288806 DRAM arrays  
The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering...
7285813 Metal-insulator-metal capacitor and method for manufacturing the same  
A capacitor has a lower electrode formed on an insulation layer, a dielectric layer formed on the lower electrode, an upper electrode layer formed on the dielectric layer, and a first protection...
7259416 Semiconductor device having a conductive plug  
There is provided a semiconductor device that comprises a first impurity diffusion region formed on a silicon substrate (semiconductor substrate), a first interlayer insulating film (first...
7253069 Method for manufacturing silicon-on-insulator wafer  
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a...
7250650 Field-effect transistor structure and associated semiconductor memory cell  
A field-effect transistor (FET) structure and method of formation thereof is presented. The FET structure includes first and second source/drain regions formed in a semiconductor substrate to...
7247901 Method for forming 1 TRAM cell and structure formed thereby  
A single transistor random access memory cell has an MOS well, a transfer gate of the transistor and a storage capacitor having a storage node in the well that becomes an inversion layer at a...
7244982 Semiconductor device using a conductive film and method of manufacturing the same  
A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film...
7230293 Storage nodes of a semiconductor memory  
A semiconductor memory device is provided, including a substrate and storage nodes formed on the substrate from a silicon oxide layer, the layer having been substantially removed by wet etching the...
7211856 Resistive memory for low-voltage applications  
Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer...
7211513 Process for chemical vapor desposition of a nitrogen-doped titanium oxide coating  
Nitrogen doped titanium oxide coatings on a hot glass substrate are prepared by providing a uniform vaporized reactant mixture containing a titanium compound, a nitrogen compound and an...
7208788 Semiconductor device and manufacturing method thereof  
A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the...
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