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7619272 |
Bi-axial texturing of high-K dielectric films to reduce leakage currents
The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method...
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7615438 |
Lanthanide yttrium aluminum oxide dielectric films
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The...
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7608881 |
Thin-film device and method of manufacturing same
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
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7602003 |
Semiconductor device structure for reducing hot carrier effect of MOS transistor
A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The...
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7598559 |
Semiconductor storage device, manufacturing method therefor, and portable electronic equipment
A semiconductor storage device has a semiconductor layer having a first conductivity type region and two second conductivity type regions separated from each other by the first conductivity type...
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7579227 |
Semiconductor device and method for fabricating the same
A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating...
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7576378 |
Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more...
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7573084 |
Non-volatile semiconductor memory device and method for fabricating the same
According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric...
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7573083 |
Transistor type ferroelectric memory and method of manufacturing the same
A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source...
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7572698 |
Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean
A ferroelectric memory device is fabricated while mitigating edge degradation. A bottom electrode is formed over one or more semiconductor layers. A ferroelectric layer is formed over the bottom...
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7566938 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid;...
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RE40842 |
Memory elements and methods for making same
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a...
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7544987 |
High-k dielectric materials and processes for manufacturing them
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
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7535047 |
Semiconductor device containing an ultra thin dielectric film or dielectric layer
An ultra thin dielectric film or dielectric layer on a semiconductor device is disclosed. In one embodiment, an oxide layer is formed over a substrate. A silicon-containing material is deposited...
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7531863 |
Semiconductor device and method of fabricating the same
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor...
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7528435 |
Semiconductor constructions
The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material...
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7528434 |
Production process for a semiconductor component with a praseodymium oxide dielectric
The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the...
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7525144 |
Insulating film and semiconductor device
An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1):
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7521745 |
Semiconductor device reducing leakage across a ferroelectric layer
A bottom electrode ( 52 ) made of Ir, an initial layer ( 53 ), a core layer ( 54 ) and a termination layer ( 55 ) of a PZT film, and a top electrode ( 56 ) made of IrO 2 , are formed on an...
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7517752 |
Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the same
Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a...
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7514734 |
Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed...
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7511327 |
Capacitive electrode having semiconductor layers with an interface of separated grain boundaries
The present invention relates to a structure of a capacitor, in particular using niobium pentoxide, of a semiconductor capacitor memory device. Since niobium pentoxide has a low crystallization...
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7511326 |
ALD of amorphous lanthanide doped TiOx films
The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and...
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7510983 |
Iridium/zirconium oxide structure
Embodiments of an electronic apparatus and embodiments for methods of forming the electronic apparatus include a conductive layer having an iridium-based layer, where the conductive layer is...
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7504684 |
Semiconductor device and manufacturing method therefor
A semiconductor device comprising a capacitive element which is provided above the semiconductor substrate and which has a capacitive insulation film held between an upper electrode and a lower...
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7498628 |
Capacitor for a semiconductor device and manufacturing method thereof
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over...
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7495277 |
Memory circuitry
The invention includes memory circuitry. In one implementation, memory circuitry includes a memory array comprising a plurality of memory cell capacitors. Individual of the capacitors include a...
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7491996 |
Capacitive element, semiconductor device, and method of manufacturing the capacitive element
A capacitive element includes a base member 10 , an underlying insulating film 11 formed on the base member 10 , a capacitor Q constructed by forming a lower electrode 13 , a capacitor...
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7489000 |
Capacitor structures with oxynitride layer between capacitor plate and capacitor dielectric layer
Methods for fuming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO)...
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7485915 |
Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first...
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7485913 |
Semiconductor memory device and method for fabricating the same
A semiconductor memory device includes a memory cell and a dummy cell. The amount of leakage current per unit area in a capacitor in the dummy cell is larger than that in a capacitor in the memory...
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7485503 |
Dielectric interface for group III-V semiconductor device
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
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7474002 |
Semiconductor device having dielectric film having aperture portion
In the semiconductor device having a structure in which a plurality of layers are built-up by layers made of different materials or layers including various formed patterns, it is an object to...
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7473949 |
Ferroelectric capacitor and method of manufacturing the same
After a step of fabricating a MOS transistor ( 14 ) on a semiconductor substrate ( 11 ) and further steps up to bury a W plug ( 24 ), an Ir film ( 25 a ), an IrO y film ( 25 b ), a PZT film ( 26...
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7473652 |
Organic polymers, electronic devices, and methods
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula:
wherein: each R 1 is independently H, an aryl group, Cl, Br, I, or an organic group...
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7470585 |
Integrated circuit and fabrication process
An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device...
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7465982 |
Capacitor structures
Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming...
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7465980 |
Ferroelectric memory, multivalent data recording method and multivalent data reading method
A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at...
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7465976 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes...
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7462901 |
Field effect transistor
A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive...
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7459741 |
Semiconductor memory device
A semiconductor memory device excellent in data holding characteristics even when a cell area is reduced is disclosed. According to one aspect of the present invention, a semiconductor memory...
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7456459 |
Design of low inductance embedded capacitor layer connections
The present invention discloses capacitors having via connections and electrodes designed such that they provide a low inductance path, thus reducing needed capacitance, while enabling the use of...
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7456456 |
Semiconductor device and method of manufacturing the same
A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film...
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7449742 |
Memory device with active layer of dendrimeric material
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active...
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7446367 |
Reliable gap-filling process and apparatus for performing the process in the manufacturing of semiconductor devices
A reliable gap-filling process is performed in the manufacturing of a semiconductor device. An apparatus for performing the gap-filling process includes a chamber in which a wafer chuck is...
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7446363 |
Capacitor including a percentage of amorphous dielectric material and a percentage of crystalline dielectric material
The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second...
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7442983 |
Method for making a semiconductor device having a high-k gate dielectric
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and...
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7442982 |
Capacitor having reaction preventing layer and methods of forming the same
The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of...
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7439105 |
Metal gate with zirconium
A gate electrode ( 202 ) for a transistor including a metal gate structure ( 207 ) containing zirconium and a polycrystalline silicon cap ( 209 ) located there over. The metal gate structure ( 207...
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7425761 |
Method of manufacturing a dielectric film in a capacitor
A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of...
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