Matches 401 - 450 out of 739 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
6586793 Ferroelectric memory and manufacturing method thereof  
A ferroelectric memory includes first and second plugs respectively connected to one and the other of source/drain regions of the transistor formed on a semiconductor wafer. A first capacitor...
6573547 Method for forming cell capacitor for high-integrated DRAMs  
A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by...
6570202 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same  
A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a...
6570207 Structure and method for creating vertical capacitor and anti-fuse in DRAM process employing vertical array device cell complex  
An integrated circuit chip is provided having both a conventional DRAM vertical transfer device and an integrated vertical storage capacitor or anti-fuse that can be accessed directly without...
6566701 Encapsulated conductive pillar  
The present invention provides an encapsulated 3-D conductive pillar and a method of formation thereof. Significant economic savings are achieved by filling a substantial portion of the volume of...
6567260 Capacitor and semiconductor memory  
In order to reduce a leakage current of a storage node ( 120 ), a rough semiconductor film ( 108 ) provided in the storage node ( 120 ) includes a portion ( 108 a ) forming a side face of the...
6566753 Composite iridium barrier structure with oxidized refractory metal companion barrier  
An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film...
6563183 Gate array with multiple dielectric properties and method for forming same  
The invention provides an integrated circuit fabricated on a semiconductor substrate. The integrated circuit comprises a first field effect transistor and a second field effect transistor. The...
6563153 Electrically tunable device and a method relating thereto  
A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number...
6559499 Process for fabricating an integrated circuit device having capacitors with a multilevel metallization  
A process for fabricating trench capacitors in an interconnect layer of a semiconductor device is disclosed. In the process, at least one interconnect is formed in the interconnect layer, which is...
6555864 Ferroelectric capacitor having a PZT layer with an excess of Pb  
A ferroelectric capacitor includes a lower electrode, a ferroelectric capacitor insulation film formed on the lower electrode and an upper electrode formed on the ferroelectric capacitor insulation...
6551896 Capacitor for analog circuit, and manufacturing method thereof  
Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization...
6552385 DRAM memory capacitor having three-layer dielectric, and method for its production  
A DRAM capacitor is described that contains a BaSrTiO 3 (BST) dielectric. The dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be...
6552379 Semiconductor device and manufacturing method thereof  
A semiconductor device with capacitors which have a structure wherein fluctuation in thickness does not occur, even in the case that a dielectric film of low coverage is used. The semiconductor...
6552388 Hafnium nitride gate dielectric  
A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises...
6552377 Mos transistor with dual metal gate structure  
A method for making a ULSI MOSFET includes depositing a high-k gate insulator on a silicon substrate and then depositing a field oxide layer over the gate insulator. The field oxide layer is masked...
6548854 Compound, high-K, gate and capacitor insulator layer  
A gate or capacitor insulator structure using a first grown oxide layer, a high-k dielectric material on the grown oxide layer, and a deposited oxide layer on the high-k dielectric material. The...
6548368 Method of forming a MIS capacitor  
Provided is a method of integrating Ta 2 O 5 into an MIS stack capacitor for a semiconductor device by forming a thin SiON layer at the Si/TaO interface using low temperature remote plasma...
6541812 Capacitor and method for forming the same  
A capacitor useful with semiconductor devices and a method for forming such a capacitor is provided. The capacitor comprises a contact formed in a layer of an insulating material of a semiconductor...
6541813 Capacitor and method for manufacturing the same  
The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element...
6541811 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer  
A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first...
6537861 SOI transistor with body contact and method of forming same  
An SOI field effect transistor is provided comprising a body contact that is isolated by a shallow trench that is formed into the body portion of the transistor, thereby eliminating any increase in...
6534820 Integrated dynamic memory cell having a small area of extent, and a method for its production  
An integrated dynamic memory cell having a small area of extent on a semiconductor substrate is described. The memory cell has a selection MOSFET with a gate connection area that is connected to a...
6531354 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors  
Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an...
6525366 Uniform dielectric layer and method to form same  
An exemplary embodiment of the present invention discloses a method for forming a forming a storage capacitor having a uniform dielectric film, by a the steps of: forming a bottom electrode of the...
6525365 Dielectric films and capacitor structures including same  
The present invention provides a method for forming a dielectric film, e.g., a barium-strontium-titanate film, preferably having a thickness of less than about 600 Å. According to the present...
6521930 Semiconductor device having Ta2O5 thin film  
In the case where a Ta 2 O 5 thin film having double bond Ta═O is employed for a capacitative insulating film, Rapid Thermal Anneal in oxygen, and UV/O 3 treatment are executed at suitable...
6518634 Strontium nitride or strontium oxynitride gate dielectric  
A method of forming a capacitor and transistor are disclosed. Initially, a substrate having a semiconductor material on a first surface is provided. A layer of strontium nitride is then deposited...
6515323 Ferroelectric memory device having improved ferroelectric characteristics  
A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for...
6509601 Semiconductor memory device having capacitor protection layer and method for manufacturing the same  
A semiconductor memory device having a capacitor protection layer and a method for manufacturing the same. A capacitor of the semiconductor memory device is entirely covered with an encapsulating...
6507062 Capacitor for semiconductor memory device  
A capacitor for a semiconductor memory device includes a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate, having contact plugs filled with a conductive...
6506643 Method for forming a damascene FeRAM cell structure  
A three-dimensional ferroelectric structure and fabrication method are provided. The ferroelectric capacitor structure permits immediate contact between a noble metal capacitor electrode and a...
6504228 Semiconductor device and method for manufacturing the same  
A lower electrode film is made to have a crystal grain laminated structure composed of a granular structure crystal grain layer and a columnar structure crystal grain layer. Also, a barrier layer...
6501111 Three-dimensional (3D) programmable device  
A three-dimensional (3D) memory device having polysilicon diode isolation elements for chalcogenide memory cells and method for fabricating the same are described. The memory device includes a...
6501121 Semiconductor structure  
A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such...
6498364 Capacitor for integration with copper damascene processes  
The present invention provides a capacitor for use in a semiconductor device having a damascene interconnect structure, such as a dual damascene interconnect, formed over a substrate of a...
6495879 Ferroelectric memory device having a protective layer  
A ferroelectric memory device includes an array of memory cells each having a cell transistor and a ferroelectric capacitor, an insulator film overlying the ferroelectric capacitor and including...
6495413 Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits  
A method for fabricating integrated capacitors, of particular utility in forming a ferroelectric capacitor array for a ferroelectric memory integrated circuits, begins with provision of a...
6492673 Charge pump or other charge storage capacitor including PZT layer for combined use as encapsulation layer and dielectric layer of ferroelectric capacitor and a method for manufacturing the same  
A charge storage capacitor includes a bottom electrode, a dielectric layer formed on the bottom electrode, and a local interconnect electrode formed on the dielectric layer, wherein the dielectric...
6486021 Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectric  
A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate...
6483143 Semiconductor device having a capacitor structure including a self-alignment deposition preventing film  
In a semiconductor device including a plurality of memory cells, a deposition preventing film is formed on an interlayer insulating film in which a plurality of holes are formed, or a seed film is...
6479856 Electrode and a capacitor and DRAM containing the same  
A Layered product ( 70 ) is formed on a high-dielectric-constant layer ( 64 ). The layered product has a layered structure consisting of an upper electrode ( 71 ), a barrier layer ( 72 ), a stopper...
6479849 Dielectric capacitor and memory and method of manufacturing the same  
A bottom electrode, a dielectric film and a top electrode are sequentially provided on a substrate portion. The bottom electrode comprises an adhesive layer including IrHf, a precious metal layer...
6475854 Method of forming metal electrodes  
A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a...
6475856 Capacitors and capacitor forming methods  
The invention includes capacitors, capacitor forming methods, field effect transistors, and field effect transistor forming methods. In one aspect, a method of forming a layer including tungsten...
6472700 Semiconductor device with isolation insulator, interlayer insulation film, and a sidewall coating film  
A semiconductor device capable of suppressing increase in the junction leakage current and preventing deterioration in the electric characteristics even when the device is miniaturized, and a...
6465826 Embedded LSI having a FeRAM section and a logic circuit section  
An embedded LSI includes a FeRAM macro block and an associated logic circuit section. A hydrogen barrier layer covers the FeRAM macro block as a whole and exposes the logic circuit section. The...
6465825 Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same  
A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh...
6462368 Ferroelectric capacitor with a self-aligned diffusion barrier  
A diffusion preventive layer extending between the bottom surface of a lower electrode and an interconnection connecting the lower electrode to one of the diffusion layer of a switching transistor...
6459118 NAND type nonvolatile ferroelectric memory cell  
NAND type non-volatile ferroelectric memory cell and non-volatile ferroelectric memory of the same, in which numbers of access to a main cell and a reference cell are made the same, to maintain...
Matches 401 - 450 out of 739 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >