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6992344 |
Damascene integration scheme for developing metal-insulator-metal capacitors
The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures...
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6992368 |
Production of metal insulator metal (MIM) structures using anodizing process
Metal-insulator-metal capacitor structures are formed in semiconductor substrates using an anodization procedure on deposited underlying metalization followed by deposition of the second metal and...
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6989573 |
Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics
The invention provides a laminated dielectric layer for semiconductor devices formed by a combination of ZrO 2 and a lanthanide oxide on a semiconductor substrate and methods of making the same....
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6990008 |
Switchable capacitance and nonvolatile memory device using the same
A device ( 2 ) with a switchable capacitance comprises a first and a second electrode ( 12, 20 ) facing each other, a dielectric layer ( 14 ) between a first and a second capacitor electrode ( 12,...
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6987308 |
Ferroelectric capacitors with metal oxide for inhibiting fatigue
A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the...
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6984857 |
Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during...
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6982447 |
Ferroelectric memory devices
A ferroelectric memory device includes a semiconductor substrate, ferroelectric capacitors, conductive patterns, and plate lines. The ferroelectric capacitors are arranged in rows and columns on...
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6982444 |
Ferroelectric memory device having a hydrogen barrier film
There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom...
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6979888 |
LOC semiconductor assembled with room temperature adhesive
A semiconductor device assembly having a lead frame and a semiconductor die configured to be attached to each other is disclosed. An adhesive is applied at room temperature through a stencil to the...
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6979855 |
High-quality praseodymium gate dielectrics
A praseodymium (Pr) gate oxide and method of fabricating same that produces a high-quality and ultra-thin equivalent oxide thickness as compared to conventional SiO 2 gate oxides are provided. The...
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6977402 |
Memory device having storage part and thin-film part
A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness...
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6969634 |
Semiconductor layers with roughness patterning
A method for making an IC on a surface of a planar substrate includes forming a continuous first layer on the surface of the substrate and pressing a surface of a stamp into the first layer to...
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6969880 |
High capacitive density stacked decoupling capacitor structure
A capacitive structure ( 10 ). The capacitive structure comprises a semiconductor base region ( 30 ) having an upper surface, a well ( 12 ) formed within the semiconductor base region and adjacent...
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6965140 |
Semiconductor device including storage capacitor
It is an object of the present invention to provide a high-reliability semiconductor device having a storage capacitor and wiring using copper for a main conductive film. Under the above object,...
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6960801 |
High density single transistor ferroelectric non-volatile memory
A single transistor ferroelectric memory (“FEM”) cell, useful for high density ferroelectric random access memory (“FRAM”) applications, and a method for making the same, are herein...
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6958508 |
Ferroelectric memory having ferroelectric capacitor insulative film
A capacitor upper electrode and a wiring are electrically connected to each other by using a plug and a conductive layer formed below a capacitive element without using a plug that directly...
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6958526 |
Electronic structures with reduced capacitance
An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of...
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6956279 |
Semiconductor device having multi-layer oxygen barrier pattern
The present invention relates to the field of a semiconductor device having a ferroelectric material capacitor and method of making the same. The semiconductor device includes a capacitor having a...
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6955925 |
Annealing
A method and apparatus for annealing an integrated ferroelectric device ( 10 ) is disclosed in which the device ( 10 ) comprises a first layer of material capable of existing in a ferroelectric...
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6952029 |
Thin film capacitor with substantially homogenous stoichiometry
A method for ion implantation of high dielectric constant materials with dopants to improve sidewall stoichiometry is disclosed. Particularly, the invention relates to ion implantation of...
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6949787 |
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or...
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6943397 |
Device having capacitor and its manufacture
A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode...
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6943392 |
Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first...
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6940111 |
Radiation protection in integrated circuits
Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer...
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6940117 |
Prevention of Ta2O5 mim cap shorting in the beol anneal cycles
The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed....
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6940118 |
Semiconductor device with high permittivity gate dielectric film
A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal...
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6936881 |
Capacitor that includes high permittivity capacitor dielectric
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer....
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6936880 |
Capacitor of semiconductor memory device and method of manufacturing the same
A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the...
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6936876 |
Semiconductor device having ferroelectric thin film and fabricating method therefor
A ferroelectric capacitor in a semiconductor device is constructed of a Pt lower electrode, a ferroelectric thin film and a Pt upper electrode that are successively laminated onto a silicon...
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6933156 |
Semiconductor capacitor with diffusion prevention layer
A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and...
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6933549 |
Barrier material
A barrier layer protecting, for example, a ferroelectric capacitor from hydrogen is described. The barrier layer comprises aluminum oxide with barrier enhancement dopants. The barrier enhancement...
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6934180 |
Random access memory cell having reduced current leakage and having a pass transistor control gate formed in a trench
A dynamic random access memory (DRAM) cell and associated array are disclosed. The DRAM cell ( 300 ) includes a storage capacitor ( 304 ) and a pass transistor ( 302 ). The pass transistor ( 302 )...
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6933553 |
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor
Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO 2 ) thin film used as a channel material, a source electrode and a drain electrode...
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6930346 |
Evaporation of Y-Si-O films for medium-K dielectrics
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Gate oxides formed from...
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6927464 |
Flat panel display device
A method of manufacturing a flat panel display device using fewer masks and resulting in a device with high brightness is disclosed. The resulting devices includes at least first to fourth thin...
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6927439 |
Semiconductor memory with strongly adhesive electrode
A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a...
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6927436 |
Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon...
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6927120 |
Method for forming an asymmetric crystalline structure memory cell
Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer...
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6927435 |
Semiconductor device and its production process
A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly...
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6924519 |
Semiconductor device with perovskite capacitor
There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and comprising a bottom electrode, a top electrode, and a...
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6919212 |
Method for fabricating ferroelectric random access memory device with merged-top electrode-plateline capacitor
The present invention relates to a method for fabricating a ferroelectric random access memory (FeRAM) device. The method includes the steps of: forming a first inter-layer insulation layer on a...
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6918165 |
Method for manufacturing a multi-layer capacitor
A multi-layer capacitor is highly downsized and increased in capacity. A method for manufacturing the multi-layer capacitor includes, in the same vacuum chamber, forming a dielectric layer,...
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6917112 |
Conductive semiconductor structures containing metal oxide regions
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g.. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the...
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6916722 |
Method to fabricate high reliable metal capacitor within copper back-end process
A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, a contact point is provided in the...
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6917065 |
Ferroelectric capacitor and semiconductor device
A ferroelectric capacitor of the type having a top electrode, a ferroelectric thin film, and a bottom electrode, is characterized in that said ferroelectric thin film is a perovskite-type oxide...
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6914286 |
Semiconductor memory devices using sidewall spacers
Storage nodes for semiconductor memory devices may be fabricated by repeatedly forming conductive and insulating spacers on mold oxide layer pattern sidewalls, to thereby obtain fine line patterns...
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6914282 |
Ferroelectric device and method for making
A ferroelectric subassembly for an integrated circuit includes a second layer lying between and in contact with first and third layers. The second layer comprises a ferroelectric material while the...
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6911686 |
Semiconductor memory device having planarized upper surface and a SiON moisture barrier
There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of...
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6906398 |
Semiconductor chip with gate dielectrics for high-performance and low-leakage applications
Both high performance and low leakage current devices can be formed on a single wafer without significant additional processing steps by the formation of an ultra-thin gate dielectric and a...
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6906375 |
Divalent europium-containing compositions
This invention provides compositions of the formula EuCu 3 M 4 O 12 wherein M is Ge, Ti, Sn or mixtures thereof. These compositions have high dielectric constant and low loss over a frequency...
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