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7112839 |
Semiconductor device with transistor and capacitor and its manufacture method
On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer...
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7105886 |
High K dielectric film
A dielectric layer comprised of lanthanum, lutetium, and oxygen that is formed between two conductors or a conductor and a substrate. In one embodiment, the dielectric layer is formed over the...
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7105883 |
Semiconductor device
A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen;...
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7102183 |
MOS transistor
In P-channel MOS transistor comprising a gate insulating film composed of a high dielectric constant material and the gate electrode composed of polycrystalline silicon, a technology for preventing...
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7102189 |
Semiconductor device suitable for forming conductive film such as platinum with good coverage, and its manufacture
A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal,...
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7098497 |
Semiconductor device using high-dielectric-constant material and method of manufacturing the same
A semiconductor device includes a MOS transistor, interlayer dielectric film, first and second high-dielectric-constant films, and first and second conductive films. The MOS transistor is formed on...
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7098496 |
Ferroelectric transistor gate stack with resistance-modified conductive oxide
The present invention discloses a novel ferroelectric transistor design using a resistive oxide film in place of the gate dielectric. By replacing the gate dielectric with a resistive oxide film,...
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7094657 |
Method for protecting against oxidation of a conductive layer in said device
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
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7095073 |
High K artificial lattices for capacitor applications to use in Cu or Al BEOL
An improved and new process of fabricating high dielectric constant MIM capacitors. These high dielectric constant MIM capacitor met all of the stringent requirements needed for both for both RF...
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7091547 |
Semiconductor storage location
A semiconductor memory cell, in particular, in a DRAM memory cell array, includes a selection transistor and a storage capacitor. The storage capacitor has a first and a second capacitor...
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7091542 |
Method of forming a MIM capacitor for Cu BEOL application
The present invention relates generally to integrated circuits, and particularly, but not by way of limitation, metal-insulator-metal (MIM) capacitors formed within a trench located within a...
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7091548 |
Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same
There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and...
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7087946 |
Electric device having nanoscale wires and gaps
A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are...
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7081650 |
Interposer with signal and power supply through vias
A planar thin film multi-layer capacitor having a high dielectric constant with a plurality of conductive through vias and a plurality of pairs of conductive through vias having a low dielectric...
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7078755 |
Memory cell with selective deposition of refractory metals
Methods are provided for selective formation of oxidation-resistant caps for conductive plugs in semiconductor device fabrication. One embodiment of the present invention forms a sacrificial layer...
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7076858 |
Method for controlling resonant tag frequency
A method of making a resonant frequency tag having a predetermined frequency comprises forming a first conductive pattern comprising an inductive element and a first land having a first end...
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7067861 |
Device and method for protecting against oxidation of a conductive layer in said device
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
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7067869 |
Adjustable 3D capacitor
There is a need for adjustable capacitors for use in LC or RC matching networks in micro-circuits. This has been achieved by forming a set of individual capacitors that share a common bottom...
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7064374 |
Barrier layers for protecting metal oxides from hydrogen degradation
A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an...
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7064368 |
Resin-encapsulated semiconductor apparatus and process for its fabrication
The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member...
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7049650 |
Semiconductor device
A semiconductor device comprises a capacitor including a bottom electrode, a top electrode, and a dielectric film, the bottom electrode comprising a first conductive film containing iridium, a...
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7045847 |
Semiconductor device with high-k gate dielectric
An integrated circuit includes a substrate, a first transistor, and a second transistor. The first transistor has a first gate dielectric portion located between a first gate electrode and the...
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7042034 |
Capacitor
The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The...
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7038262 |
Integrated circuit devices including an intaglio pattern
Integrated circuit devices and methods of fabricating the same include an interlayer dielectric formed on an integrated circuit substrate. A plurality of buried contacts are formed in the...
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7038265 |
Capacitor having tantalum oxynitride film and method for making same
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen...
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7038284 |
Methods for making a dielectric stack in an integrated circuit
An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface...
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7034355 |
Nonvolatile semiconductor storage and its manufacturing method
To achieve a higher operating speed, higher reliability, and lower power consumption by reducing the thickness of an inter-poly silicon insulator film between a floating gate and a control gate of...
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7034396 |
Structure of semiconductor element and its manufacturing process
A semiconductor element includes a semiconductor substrate; a film of electrode material on the substrate at a thickness corresponding to the height of a pair of confronting electrodes standing...
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7030437 |
Semiconductor device having sense amplifier including paired transistors
A semiconductor device includes two sense amplifiers provided on a semiconductor substrate. Each of two sense amplifiers is formed of a pair of transistors. Two transistors are separated from each...
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7029983 |
Methods of forming MIM type capacitors by forming upper and lower electrode layers in a recess that exposes a source/drain region of a transistor and MIM capacitors so formed
A MIM capacitor can be formed by forming an insulating layer on a source/drain region of a transistor. A first pattern is formed on the insulating layer. A recess is formed in the insulating layer...
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7026680 |
Thin film capacitive element, method for producing same and electronic device
An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a...
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7023043 |
Top electrode in a strongly oxidizing environment
An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first...
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7023037 |
Integrated circuit devices having dielectric regions protected with multi-layer insulation structures
A dielectric region, such as a ferroelectric dielectric region of an integrated circuit capacitor, is protected by a multi-layer insulation structure including a first relatively thin insulation...
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7019352 |
Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components
Semiconductor devices and fabrication methods are disclosed, in which one or more low silicon-hydrogen SiN barriers are provided to inhibit hydrogen diffusion into ferroelectric capacitors and into...
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7015533 |
Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A...
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7015531 |
FeRAM having bottom electrode connected to storage node and method for forming the same
A FeRAM device in which a bottom electrode of a ferroelectric capacitor is connected to a source/drain region of a transistor and a top electrode is connected to a plate line. The FeRAM device...
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7015523 |
Ferroelectric memory structure and fabrication method thereof
A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the...
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7015527 |
Metal oxynitride capacitor barrier layer
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
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7012317 |
Tunable thin film capacitor
It is an object of the invention to provide a variable capacitor constituted such that, even when an external control voltage is applied, a stable dielectric constant of the dielectric layer can be...
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7012294 |
Semiconductor constructions
The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass...
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7012292 |
Oxidative top electrode deposition process, and microelectronic device structure
A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top...
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7009832 |
High density metal-to-metal maze capacitor with optimized capacitance matching
A capacitor including a first and second component capacitor structure disposed on a substrate. A component capacitor structure includes an upright arm, a transverse arm, and a via. The upright arm...
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7009245 |
High-K tunneling dielectric for read only memory device and fabrication method thereof
A fabrication method for a read only memory device with a high dielectric constant tunneling dielectric layer, wherein this method provides forming a tunneling dielectric layer on a substrate,...
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7005695 |
Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second...
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7002199 |
Semiconductor device using high-dielectric-constant material and method of manufacturing the same
A semiconductor device includes a MOS transistor, interlayer dielectric film, first and second high-dielectric-constant films, and first and second conductive films. The MOS transistor is formed on...
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7002788 |
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein...
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7002212 |
Static RAM having a TFT with n-type source and drain regions and a p-type region in contact with only the intrinsic channel of the same
To prevent an n-channel thin-film transistor from being deteriorated by hot holes generated in a gate-negative pulse mode. A thin polysilicon film 10 is provided with a p-type semiconductor...
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7002193 |
Ferroelectric capacitor and method of manufacturing the same
A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a...
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6995419 |
Semiconductor constructions having crystalline dielectric layers
The invention includes semiconductor constructions. In one implementation, semiconductor construction includes a first conductive material. A first layer of a dielectric material is over the first...
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6995446 |
Isolating phase change memories with schottky diodes and guard rings
A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a...
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