Matches 651 - 700 out of 739 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
5736759 Reduced fatigue ferroelectric element  
A fatigue resistent ferroelectric element having a ferroelectric body, and regions of enhanced oxide ion mobility on opposite sides of the body to which are attached electrodes. In one embodiment,...
5719416 Integrated circuit with layered superlattice material compound  
A method of fabricating a ferroelectric or layered superlattice DRAM compatible with conventional silicon CMOS technology. A MOSFET is formed on a silicon substrate. A thick layer of BPSG followed...
5717233 Semiconductor device having capacitior and manufacturing method thereof  
A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated...
5717236 Semiconductor memory including stacked capacitor having a flat surface  
To enhance an electric characteristic of a capacitor by decreasing a leak current, and by eliminating a recess formed in the middle of a lower electrode. In order to cover a transistor, a first...
5696394 Capacitor having a metal-oxide dielectric  
A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage...
5689126 Semiconductor memory device having stacked capacitor  
In a stacked capacitor for a DRAM cell, including a lower electrode layer, an upper electrode layer and an insulating layer therebetween, at least two insulating layers are formed on the upper...
5686339 High dielectric constant capacitor and a fabricating method thereof  
A method for fabricating a capacitor of a semiconductor device, includes the steps of: forming a first insulating layer and then a second insulating layer on the first insulating layer; removing...
5684315 Semiconductor memory device including memory cells each having an information storage capacitor component formed over control electrode of cell selecting transistor  
A semiconductor memory device has memory cells provided at intersections between word line conductors and data line conductors. Each of the memory cells includes a cell selecting transistor and an...
5670808 Metal oxide capacitor with a WN.sub.X electrode  
A semiconductor device in which an SiO 2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a...
5661319 Semiconductor device having capacitor  
This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion...
5652446 Semiconductor memory device with improved capacitor  
There is provided a semiconductor device, including: a semiconductor substrate having a major surface; a first insulating film formed on the major surface of the semiconductor substrate; a...
5644151 Semiconductor memory device and method for fabricating the same  
A pair of electrically conductive regions of ruthenium dioxide are formed on a BPSG film covering DRAM memory cells arranged in a matrix form. The conductive region is extended in a column...
5644158 Semiconductor memory device reducing hydrogen content  
A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first...
5635741 Barium strontium titanate (BST) thin films by erbium donor doping  
A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size...
5627391 Semiconductor device and method of manufacturing the same  
A semiconductor device comprises silicon substrate 1 on which an integrated circuit is formed, first insulating layer 6 formed on silicon substrate 1, a capacitor comprising lower electrode 7...
5612560 Electrode structure for ferroelectric capacitors for integrated circuits  
An improved electrode structure compatible with ferroelectric capacitor dielectrics is provided. In particular, a multilayer electrode having improved adhesion to ferroelectric materials such as...
5608247 Storage capacitor structures using CVD tin on hemispherical grain silicon  
An embodiment of the present invention depicts a storage capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a titanium nitride layer adjacent and...
5608246 Integration of high value capacitor with ferroelectric memory  
An integrated circuit capacitor and method for making the same utilizes a ferroelectric dielectric, such as lead-zirconate-titanate ("PZT"), to produce a high value peripheral capacitor for...
5606187 Charge coupled device gate structure having narrow effective gaps between gate electrodes  
A CCD structure including high resolution pixels. The gate electrodes of the CCD are separated by gaps in the order of 0.6 μm which are made to look smaller than their physical size by the use of...
RE35416 Active matrix liquid crystal display device and method for production thereof  
Metal-insulator-metal devices having an insulation layer between two metal layers wherein the relative dielectric constant of the insulation layer is less than the relative dielectric constant of...
5587610 Semiconductor device having a conductive layer with an aperture  
A semiconductor device is constituted by a semiconductor substrate of a first conductivity type. An associated circuit element has a first electrode, a second electrode, and an impurity diffusion...
5578845 Dielectric thin film device with lead erbium zirconate titanate  
A dielectric thin film device is constructed by a dielectric thin film using lead erbium zirconate titanate represented by (Pb 1 -y Er y ) (Zr x Ti 1 -x)O 3 with 0<x<1 and 0<y<1. This...
5578848 Ultra thin dielectric for electronic devices and method of making same  
High quality, ultra thin SiO 2 /Si 3 N 4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N 2 O-reoxidation (LRTNO) of Si 3 N 4 films. Si...
5576564 Ferroelectric thin film with intermediate buffer layer  
The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal...
5567964 Semiconductor device  
An object of the invention is to provide a capacitor having good anti-leak characteristics and good breakdown voltage characteristics. A transfer gate transistor having source/drain regions is...
5563762 Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit  
A capacitor structure and method of forming a capacitor structure for an integrated circuit is provided. The capacitor structure, comprising a bottom electrode, capacitor dielectric and top...
5561307 Ferroelectric integrated circuit  
An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium,...
5555486 Hybrid metal/metal oxide electrodes for ferroelectric capacitors  
Ferroelectric capacitors with hybrid electrodes including both a conducting oxide and a noble metal may be used to achieve devices having improved performance over capacitors with either platinum...
5554559 Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric  
A semiconductor device in which a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in which a lower electrode (11), an oxidic ferroelectric...
5548157 Semiconductor device capable of increasing reliability  
In a semiconductor device having a first insulator layer on a semiconductor substrate and accumulation electrode layers overlying the first insulator layer, second insulator layers overlie...
5523595 Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film  
A semiconductor device having a ferroelectric film or a polycrystalline silicon gate, a humidity-resistant hydrogen barrier film, like TiN film, TiON film, etc., formed by hydrogen non-emission...
5519234 Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current  
An integrated circuit includes a layered superlattice material having the formula A1 w1 +a1 A2 w2 +a2 . . . Aj wj +aj S1 x1 +s1 S2 x2 +s2 . . . Sk xk +ak B1 y1 +b1 B2 y2 +b2 . . . Bl yl +bl...
5498890 Semiconductor device having a multi-layered dielectric structure and manufacturing method thereof  
A semiconductor device and a manufacturing method thereof are disclpsed, the semiconductor device comprising: a first conductive layer; an oxide layer formed upon the first conductive layer; a...
5495439 Semiconductor memory device having SOI structure and manufacturing method thereof  
A dielectric layer is formed on a main surface of a semiconductor substrate. A silicon layer is formed on dielectric layer. MOS transistors are formed in the silicon layer and include impurity...
5486713 Semiconductor device having a capacitor  
A semiconductor device having a capacitor includes a substrate, an insulating film formed on a surface of the substrate, a lower electrode formed on said insulating film, the lower electrode...
5475248 Semiconductor device with a conductive reaction-preventing film  
A semiconductor device comprised of a transistor (TR) having a gate electrode, a source region and a drain region, and a ferroelectric capacitor formed above a local oxide film. The capacitor has a...
5459345 Semiconductor device high dielectric capacitor with narrow contact hole  
An object of the invention is to provide a semiconductor device which has a capacitor having good anti-leak characteristics and good breakdown voltage characteristics and is suitable to high...
5440174 Plurality of passive elements in a semiconductor integrated circuit and semiconductor integrated circuit in which passive elements are arranged  
A method consists of the steps of depositing a Ti--Pt metal film on a SiN layer insulation film mounted on GaAs substrate, etching the Ti--Pt metal film to form a first metal layer, depositing a...
5440157 Semiconductor integrated-circuit capacitor having a carbon film electrode  
A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode...
5436477 Semiconductor memory device with high dielectric capacitor structure  
Transfer gate transistors are formed on a main surface of a semiconductor substrate. The transfer gate transistors have impurity regions for serving as source/drain regions. A first interlayer...
5432732 Dynamic semiconductor memory  
A DRAM memory cell which can be easily manufactured, and has a high breakdown voltage, and a large capacitance. The dynamic semiconductor memory has capacitors for accumulating signal charges, each...
5418388 Semiconductor device having a capacitor with an adhesion layer  
In a semiconductor device and a method of manufacturing the same, adhesion between a capacitor dielectric film made of material having a high dielectric constant and an interlayer insulating film...
5396094 Semiconductor memory device with a capacitor having a protection layer  
A semiconductor memory device in which a protection layer is disposed between a silicon storage electrode and a tantalum pentoxide dielectric layer. A conductive material having a larger free...
5383088 Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics  
A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor comprises a bottom electrode comprising a conductive oxide deposited upon a substrate by...
5369296 Semiconductor device having a ferroelectric film in a through-hole  
In a memory construction using ferroelectric film, by embedding a capacitor formed by said ferroelectric film in a through hole bored in an interlayer insulating film formed on a semiconductor...
5365096 Thin film capacitive memory device with a high dielectric constant  
A semiconductor device comprising a capacitor which comprises a lower electrode, a dielectric insulating film of a metal oxide, and a upper electrode. The lower electrode is made of at least...
5335138 High dielectric constant capacitor and method of manufacture  
A high storage capacity capacitor for a semiconductor structure includes a barrier layer formed on a polysilicon electrode, a lower electrode, a dielectric layer, and an upper electrode. The...
5313089 Capacitor and a memory cell formed therefrom  
A capacitor for use in a memory cell (10). A transistor is formed overlying a substrate (10). The transistor has a first current electrode (16) and a second current electrode (18). The current...
5307169 Solid-state imaging device using high relative dielectric constant material as insulating film  
A solid-state imaging device comprises a semiconductor substrate, a plurality of pixels formed on the semiconductor substrate and generating imaging signals, and an output amplifier converting a...
5293075 Semiconductor device with PZT/PLZT film and lead-containing electrode  
A semiconductor device comprising an oxide film, an electrode and a PZT or PLZT film formed in this order on a substrate, the electrode being a deposit of platinum containing lead.
Matches 651 - 700 out of 739 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >