Matches 501 - 550 out of 739 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
6320238 Gate structure for integrated circuit fabrication  
The present invention relates to a gate stack structure having a dielectric material layer disposed on a substrate with a gate electrode disposed thereon. In an exemplary embodiment, the dielectric...
6316798 Ferroelectric memory device and method for manufacturing the same  
A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper...
6316802 Easy to manufacture integrated semiconductor memory configuration with platinum electrodes  
The integrated semiconductor memory configuration has a semiconductor body in which selection transistors and storage capacitors are integrated. The storage capacitors have a dielectric layer...
6313539 Semiconductor memory device and production method of the same  
A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate;...
6313495 Stack capacitor with improved plug conductivity  
The present invention includes a method of improving conductivity between an electrode and a plug in a stacked capacitor where an oxide has formed therebetween. The method includes the steps of...
6307228 Semiconductor device with perovskite capacitor and its manufacture method  
A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate; forming a first...
6307730 Capacitor formed by lower electrode having inner and outer uneven surfaces  
A capacitor is constructed by a cylindrical lower capacitor electrode layer having uneven inner and outer surfaces, a capacitor insulating layer formed on the cylindrical lower capacitor electrode...
6303972 Device including a conductive layer protected against oxidation  
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment...
6300215 Methods of forming integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein  
Methods of forming integrated circuit capacitors (e.g., DRAM capacitors) include the steps of forming a first capacitor electrode (e.g., polysilicon electrode) on a substrate and then forming a...
6294805 Ferroelectric memory devices including capacitors located outside the active area and made with diffusion barrier layers  
Integrated circuit ferroelectric memory devices include a pair of spaced apart word lines which cross an elongated active region, a drain region in the active region between the pair of word lines,...
6291866 Zirconium and/or hafnium oxynitride gate dielectric  
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a...
6291867 Zirconium and/or hafnium silicon-oxynitride gate dielectric  
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device...
6288420 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier  
An Ir--M--O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is...
6285051 Semiconductor memory device and method for fabricating the same  
A low-leakage-current layer, made of BST in which the content of Ti deviates from its stoichiometric composition, is interposed between a high-dielectric-constant layer, made of BST with the...
6285050 Decoupling capacitor structure distributed above an integrated circuit and method for making same  
The present invention describes the use of large thin film (TF) capacitors having capacitance C made in a separate set of TF layers ABOVE the Si and wiring levels of an integrated circuit (IC)....
6278147 On-chip decoupling capacitor with bottom hardmask  
An on-chip vertically stacked decoupling capacitor includes a hardmask film formed between the capacitor dielectric and the lower electrode. The manufacturing process used to form the capacitor...
6278153 Thin film capacitor formed in via  
There is provided a thin film capacitor including (a) a lower electrode, (b) an insulating layer formed burying the lower electrode therein and formed with a via-hole reaching the lower electrode,...
6278172 Semiconductor device having high-density capacitor elements and manufacturing method thereof  
A semiconductor device including a capacitor element which has a high withstand voltage, a large capacitance, and little parasitic resistance and parasitic capacitance. On interlayer insulating...
6274388 Annealing of a crystalline perovskite ferroelectric cell  
A method of fabricating a ferroelectric capacitor usable as a memory cell in a non-volatile integrated circuit memory integrated on a silicon substrate, preferably including an intermetallic...
6274899 Capacitor electrode having conductive regions adjacent a dielectric post  
A dielectric film (110) is formed overlying a semiconductor device substrate (10). A dielectric post (204) having an outer peripheral boundary having sidewalls is formed over the dielectric film...
6274453 Memory cell configuration and production process therefor  
A memory cell configuration with many ferroelectric or dynamic memory cells provided in a semiconductor substrate. Alternating trenches and lands extend parallel in a longitudinal direction of a...
6275370 Electrical connections to dielectric materials  
A preferred embodiment of this invention comprises an oxidizable layer (e.g. tantalum 48), an oxygen gettering layer (e.g. platinum/tantalum mixture 34) overlaying the oxidizable layer, a noble...
6271099 Method for forming a capacitor of a DRAM cell  
A method for forming a DRAM cell with a crown full metal capacitor electrode with integrated selective tungsten contact hole. When the MOSFET devices are defined, a metal landing pad with...
6271559 Semiconductor memory with information storage capacitance including an electrode containing precious metal and an added element  
A semiconductor memory includes a structure in which an insulating film is formed on a transistor constituted by a gate oxide film, a gate electrode and diffusion regions, an information storage...
6265740 Semiconductor device capacitor using a fill layer and a node on an inner surface of an opening  
A capacitor of a semiconductor device includes a first insulating layer having a contact hole therethrough and a contact plug that is in the contact hole and electrically connected to a...
6265260 Method for making an integrated circuit capacitor including tantalum pentoxide  
A method for making an integrated circuit capacitor which in one embodiment preferably comprises the steps of: forming, adjacent a semiconductor substrate, a first metal electrode comprising a...
6262462 Enhanced dielectric constant gate insulator  
A field effect transistor with an enhanced dielectric constant gate insulator including spaced apart source and drain terminals positioned on a substrate structure so as to define a gate area...
6259125 Scalable high dielectric constant capacitor  
A capacitor for high density DRAM applications comprises a high-.di-elect cons. capacitor dielectric such as BST or PZT in an arrangement which obviates the need for barrier layers during...
6259130 High density flash memories with high capacitive-couping ratio and high speed operation  
The device includes a gate oxide formed on a semiconductor substrate. Oxide regions are respectively formed on the substrate and adjacent to the gate oxide. Textured oxides are formed on the...
6255688 Capacitor having aluminum alloy bottom plate  
The present invention provides for use with an integrated circuit, an embedded memory having a transistor in contact with an interconnect formed within a dielectric layer overlaying the transistor....
6255682 Trench DRAM cells with self-aligned field plate  
The capacitor includes trenches formed in a semiconductor substrate. Recess portions are formed adjacent to the top portion of the openings of the trenches. An isolation layer is formed on the...
6246086 Structure of capacitor for dynamic random access memory and method of manufacturing thereof  
A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this...
6246082 Semiconductor memory device with less characteristic deterioration of dielectric thin film  
There is provided a semiconductor memory device with extremely less deterioration of characteristics of dielectric thin film and with high stability. A TaSiN barrier metal layer 13 is formed on a...
6242771 Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications  
A method of forming a semiconductor structure having a ferroelectric memory (FEM) gate unit on a substrate of single crystal silicon includes: forming a silicon device area for the FEM gate unit;...
6239460 Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium  
A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and...
6239462 Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same  
The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an...
6239461 Semiconductor device capacitor having a recessed contact plug  
A capacitor of a semiconductor device includes a first interlayer dielectric film pattern formed on a semiconductor substrate and having a first contact hole therein and a contact plug buried in...
6235573 Methods of forming ferroelectric random access memory devices having shared capacitor electrodes  
Methods of forming FRAM devices include the steps of forming first and second field effect access transistors in a semiconductor substrate, forming first and second bit lines (BL) electrically...
6229174 Contact structure for memory device  
Disclosed is a method of forming a self-aligned contact to a semiconductor substrate by use of a sacrificial spacer. The sacrificial spacer has the advantage of self aligning metallization to the...
6229171 Storage element for semiconductor capacitor  
A storage element of a stacked capacitor having a high dielectric film for a semiconductor device and a method of fabricating the same, the storage element having a storage node comprising a bottom...
6225668 Semiconductor device having a single crystal gate electrode and insulation  
In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a...
6222220 Extended trench for preventing interaction between components of stacked capacitors  
A stacked capacitor, in accordance with the present invention includes a conductive plug disposed within a trench for connecting to an access device. A barrier is formed on the plug and is disposed...
6218697 Contact in semiconductor memory device  
A contact in a semiconductor memory device is formed on an active region of a cell array region, rather than on a sloped area between the cell array region and a core region. Preferably, an...
6211096 Tunable dielectric constant oxide and method of manufacture  
A method is shown for manufacturing a semiconductor device in which a silicon oxide film acts as an insulating film for electrically isolating conductive layers included in the semiconductor...
6198124 Method of forming a Ta2O5 dielectric layer, method of forming a capacitor having a Ta2O5 dielectric layer, and capacitor construction  
A method of forming a dielectric layer includes, a) chemical vapor depositing a dielectric layer of Ta 2 O 5 atop a substrate; and b) providing a predominately amorphous diffusion barrier layer...
6198119 Ferroelectric element and method of producing the same  
A ferroelectric element is provided that can be highly densely integrated having a high Pr and a small Ec by using a ferroelectric thin film of the perovskite structure. A large distortion is...
6194753 Method of forming a perovskite structure semiconductor capacitor  
A semiconductor capacitor structure is made from a fabrication method which includes a step for forming an insulation film having a contact hole so that a portion of a substrate is exposed...
6194752 Dielectric device, dielectric memory and method of fabricating the same  
A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the...
6191441 Ferroelectric memory device and its drive method  
A ferroelectric memory capable of writing data at a small operation voltage has an insulated-gate field effect transistor, a ferroelectric film, and a pair of capacitor electrodes formed on the...
6191443 Capacitors, methods of forming capacitors, and DRAM memory cells  
Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor comprises a capacitor dielectric layer comprising Ta 2 O 5 formed over a first capacitor electrode....
Matches 501 - 550 out of 739 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >