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8183616 Semiconductor device, RF-IC and manufacturing method of the same  
Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor...
8178404 Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same  
A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer...
8169015 Semiconductor device and manufacturing method therefor  
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted...
8143723 Highly integrated and reliable DRAM and its manufacture  
A semiconductor device and its manufacture method wherein the semiconductor substrate has first and second insulating films, the first insulating film being an insulating film other than a silicon...
8143698 Semiconductor device  
A problem of an increased manufacturing cost is caused in conventional semiconductor devices. A semiconductor device 1 includes: a lower electrode 102 provided on a semiconductor substrate 101; an...
8134200 Nonvolatile semiconductor memory including a gate insulating film and an inter-gate insulating film  
A nonvolatile semiconductor memory of an aspect of the present invention includes a memory cell including, a charge storage layer on a gate insulating film, a multilayer insulator on the charge...
8129251 Metal-insulator-metal-structured capacitor formed with polysilicon  
A METAL-INSULATOR-METAL structured capacitor is formed with polysilicon instead of an oxide film as a sacrificial layer material that defines a storage electrode region. A MPS (Meta-stable Poly...
8120084 Ferro-electric device and modulatable injection barrier  
Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a...
8106438 Stud capacitor device and fabrication method  
The present teachings relate to a method of forming a container capacitor structure on a substrate. In one embodiment, the method comprises etching a recess in the substrate, depositing a first...
8093643 Multi-resistive integrated circuit memory  
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first...
8084367 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods  
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a...
8053824 Interdigitated mesh to provide distributed, high quality factor capacitive coupling  
Apparatuses and methods for increasing well distributed, high quality-factor on-chip capacitance of integrated circuit devices are disclosed. In one aspect, an integrated circuit device structure...
8049259 Semiconductor device including memory cell having charge accumulation layer  
A semiconductor device includes MOS transistors, capacitor elements, a voltage generating circuit, a contact plug, and a memory cell. The MOS transistor and the capacitor element are formed on a...
8039344 Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same  
In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and...
8036038 Semiconductor memory device  
A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a...
8030697 Cell structure of semiconductor device having an active region with a concave portion  
A cell structure of a semiconductor device includes an active region, having a concave portion, and an inactive region that defines the active region. A gate pattern in the active region is...
8030635 Polysilicon plug bipolar transistor for phase change memory  
Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise...
8013377 Method for producing an integrated circuit and arrangement comprising a substrate  
Embodiments of the invention relate to an integrated circuit comprising a carrier, having a capacitor with a first electrode and a second electrode. The first electrode has a dielectric layer A...
8013417 Low cost substrates and method of forming such substrates  
In one embodiment, the invention provides engineered substrates having a support with surface pits, an intermediate layer of amorphous material arranged on the surface of the support so as to at...
7994558 Method for forming barrier metal layer of bit line in semiconductor memory device  
A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin...
7989815 Display device  
The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate...
7985670 Method of forming U-shaped floating gate with a poly meta-stable polysilicon layer  
A method of realizing a flash floating poly gate using an MPS process can include forming a tunnel oxide layer on an active region of a semiconductor substrate; and then forming a first floating...
7977726 DRAM cell with enhanced capacitor area and the method of manufacturing the same  
A dynamic random access memory (DRAM) cell and the method of manufacturing the same are provided. The DRAM cell includes a cell transistor and a cell capacitor. The cell capacitor includes a first,...
7968929 On-chip decoupling capacitor structures  
The present disclosure provides on-chip decoupling capacitor structures having trench capacitors integrated with a passive capacitor formed in the back-end-of-line wiring to provide an improved...
7952130 eDRAM-type semiconductor device including logic circuit section featuring large capacitance capacitor, and capacitor DRAM section featuring small capacitance capacitor  
In an eDRAM-type semiconductor device, a dynamic random access memory (DRAM) section and a logic circuit section are formed on a semiconductor substrate, and an insulating layer is formed on the...
7919803 Semiconductor memory device having a capacitor structure with a desired capacitance and manufacturing method therefor  
A semiconductor memory device in which a plurality of capacitors each including a columnar lower electrode, a capacitor insulation film and an upper electrode are stacked with interlayer films...
7919386 Methods of forming pluralities of capacitors  
The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes...
7915659 Devices with cavity-defined gates and methods of making the same  
A method that includes forming a semiconductor fin, forming a sacrificial material adjacent the semiconductor fin, covering the sacrificial material with a dielectric material, forming a cavity by...
7888725 Electronic devices including electrode walls with insulating layers thereon  
An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from...
7888773 Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same  
In a semiconductor integrated circuit device and a method of formation thereof, a semiconductor device comprises: a semiconductor substrate; an insulator at a top portion of the substrate, defining...
7884408 One-transistor random access memory technology compatible with metal gate process  
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation...
7880213 Bottom electrode of metal-insulator-metal capacitor  
A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a...
7876610 Memory cell array with specific placement of field stoppers  
A plurality of first transistors formed on a substrate share a gate electrode. Isolation regions isolate the plurality of first transistors from one another. In the region where the plurality of...
7875920 Semiconductor device and method of manufacturing the same  
Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a...
7872293 Capacitance cell, semiconductor device, and capacitance cell arranging method  
A capacitance cell 21 is wired while using adjacent wiring layers Ma and Mb as a pair of electrode layers T1 and T2 orthogonally to opposed lateral end faces out of lateral end faces X1, X2, Y1,...
7868338 Liquid crystal display array board and method of fabricating the same  
A liquid crystal display array board includes a plurality of gate wiring lines formed on a substrate and a plurality of data wiring lines crossing the plurality of gate wiring lines, a plurality of...
7863666 Capacitor pair structure for increasing the match thereof  
A capacitor pair structure for increasing the match thereof has two finger electrode structures interlacing with each other in parallel and a common electrode being between the two finger electrode...
7859901 Semiconductor memory device  
A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a...
7859081 Capacitor, method of increasing a capacitance area of same, and system containing same  
A capacitor includes a substrate (110, 210), a first electrically insulating layer (120, 220) over the substrate, and a fin (130, 231) including a semiconducting material (135) over the first...
7851843 DRAM cylindrical capacitor  
A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric...
7843036 Enhanced on-chip decoupling capacitors and method of making same  
An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via...
7821047 Semiconductor apparatus and method for manufacturing the same  
According to an aspect of the present invention, there is provided a semiconductor apparatus including: a semiconductor substrate; an element isolation region formed in the semiconductor substrate...
7821052 Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same  
A method for use during fabrication of a semiconductor device comprises the formation of buried digit lines and contacts. During formation, a buried bit line layer may be used as a mask to etch one...
7795662 Semiconductor memory device and method for fabricating same  
A semiconductor memory device has a first interlayer insulating film formed on a semiconductor substrate and having a capacitor opening portion provided in the film, and a capacitance element...
7781819 Semiconductor devices having a contact plug and fabrication methods thereof  
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first...
7763924 Dynamic random access memory structure having merged trench and stack capacitors  
A dynamic random access memory structure includes a recessed-gate transistor disposed in the substrate; a trench capacitor structure disposed in the substrate and electrically connected to a first...
7759247 Manufacturing method of semiconductor device with a barrier layer and a metal layer  
This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an...
7745868 Semiconductor device and method of forming the same  
A semiconductor device may include a MOS transistor having source and drain regions in a semiconductor substrate, a first inter-layer insulator having first contact holes that reach the source and...
7732817 Pattern formed structure, method of forming pattern, device, electrooptical device and electronic equipment  
A partition-wall structure having a concave portion corresponding to a pattern formed by a functional liquid, including: a first concave portion provided corresponding to a first pattern; a second...
7719044 Platinum-containing integrated circuits and capacitor constructions  
In one aspect, the invention includes a method of forming a roughened layer of platinum, comprising: a) providing a substrate within a reaction chamber; b) flowing an oxidizing gas into the...
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