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7619298 |
Method and apparatus for reducing parasitic capacitance
A method and apparatus for reducing parasitic capacitance. A P-well blocked layer is formed directly beneath a parasitic device. The P-well blocked layer significantly increases the resistance...
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7615814 |
Ferroelectric device having a contact for taking the potential of a metal film and a plurality of capacitors positioned periodically
A semiconductor memory device includes: a first conductive layer; a second conductive layer; a first insulating film; a first plug; a second plug; a second insulating film having a first opening...
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7612400 |
MIM device and electronic apparatus
An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film...
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7608881 |
Thin-film device and method of manufacturing same
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
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7608517 |
Method for forming capacitor of semiconductor device
Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps...
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7608503 |
Side wall active pin memory and manufacturing method
A method of forming a memory cell comprises forming a stack comprising a first electrode, an insulating layer over the first electrode, and a second electrode over the insulating layer, with a side...
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7605037 |
Manufacturing method for an integrated semiconductor memory device and corresponding semiconductor memory device
The present invention provides an integrated semiconductor memory device comprising: a semiconductor substrate; a plurality of active area lines formed in said semiconductor substrate, each of...
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7601585 |
Method of manufacturing a ferroelectric semiconductor device utilizing an oxide reduction film
In pattern-forming ferroelectric capacitor structures by a one mask etching, after an Ir film to be a lower electrode film is formed, an AlO x film to be an oxide reduction film reducing an Ir...
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7595526 |
Capacitor and method for fabricating the same
A method for manufacturing a capacitor in a semiconductor device for securing capacitance without a merging phenomenon during a MPS grain growth process. The manufacturing step begins with a...
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7595525 |
Integrated circuit capacitor having antireflective dielectric
A capacitor ( 100 ) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor ( 100 ) has conductive top and bottom electrodes ( 140, 144 ) and a...
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7592660 |
Semiconductor device and method for manufacturing the same
There is provided a semiconductor device which includes a base insulating film formed on a semiconductor substrate, a capacitor formed on the base insulating film, an interlayer insulating film...
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7592657 |
Semiconductor device and method of manufacturing the same
According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11 , a crystalline conductive film 21 , a first...
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7592626 |
Capacitor and method of manufacturing same
A capacitor comprises: a lower electrode formed of a foil made of a polycrystalline metal; an upper conductor layer; and a dielectric layer disposed between the lower electrode and the upper...
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7589373 |
Semiconductor device
The present invention provides a semiconductor device, which includes a substrate and a sensing memory device. The substrate includes a metal-oxide-semiconductor transistor having a gate. The...
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7589370 |
RF power transistor with large periphery metal-insulator-silicon shunt capacitor
An integrated MIS capacitor structure has a bottom electrode, a capacitor dielectric overlying the bottom electrode, and a plurality of capacitor top plates overlying the capacitor dielectric. In...
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7586142 |
Semiconductor device having metal-insulator-metal capacitor and method of fabricating the same
A semiconductor device having a metal-insulator-metal (MIM) capacitor is provided and can include a lower line formed in a semiconductor substrate; a first interlayer insulating layer formed over...
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7586141 |
High speed memory device with reduced resistance and leakage current
A semiconductor device including a semiconductor substrate having a logic formation region in which a memory device is formed and a logic formation region in which a logic device is formed; a first...
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7582925 |
Integrated circuit devices including insulating support layers
An integrated circuit device may include a substrate, a plurality of storage electrode landing pads on the substrate, and a plurality of storage electrodes. Each of the plurality of storage...
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7582525 |
Method for fabricating capacitor of semiconductor memory device using amorphous carbon
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the...
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7579643 |
Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
A capacitor may include a first electrode, a second electrode, a low dielectric layer, and/or a high dielectric layer. The first electrode may include at least one first electrode branch. The...
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7576383 |
Capacitor having tapered cylindrical storage node and method for manufacturing the same
A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer...
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7576382 |
Semiconductor integrated device and method of providing shield interconnection therein
A method of providing shield interconnection, the method shielding an interconnection pattern to be shielded with shield interconnection patterns for shielding on the substrate of a semiconductor...
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7576380 |
Methods for enhancing capacitors having roughened features to increase charge-storage capacity
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
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7575971 |
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
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7573121 |
Method for enhancing electrode surface area in DRAM cell capacitors
Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing...
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7573088 |
DRAM array and electronic system
The invention includes a semiconductor construction including rows of contact plugs, and rows of parallel bottom plates. The plug pitch is approximately double the plate pitch. The invention...
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7573087 |
Interconnect line selectively isolated from an underlying contact plug
A means for selectively electrically connecting an electrical interconnect line, such as a bit line of a memory cell, with an associated contact stud and electrically isolating the interconnect...
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7573086 |
TaN integrated circuit (IC) capacitor
A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom...
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7573064 |
Dielectric actuator or sensor structure and method of making it
The present invention relates to dielectric actuators or sensors of the kind wherein electrostatic attraction between two electrodes located on an elastomeric body leads to a compression of the...
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7569878 |
Fabricating a memory cell array
A DRAM memory cell array is fabricated such that, for each memory cell of the array, the gate electrode is initially produced such that it is insulated from all the other gate electrodes assigned...
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7569454 |
Semiconductor device manufacturing method using strip-like gate electrode hard masks for ion implantation
A method of manufacturing a semiconductor device, comprises forming a gate insulating film on a surface of a semiconductor substrate, forming a first group of at least one strip-like gate electrode...
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7569453 |
Contact structure
This invention relates to contact structures for use in integrated circuits and methods of fabricating contact structures. In one embodiment, a contact structure includes a conductive layer, one or...
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7557399 |
Metal-insulator-metal capacitors
A metal-insulator-metal (MIM) capacitor is provided. The bottom electrode of the MIM capacitor is electrically connected to a connection node. The connection node may be, for example, a contact...
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7547938 |
Semiconductor devices having elongated contact plugs
A method of manufacturing a semiconductor device includes forming conductive structures on a substrate. Each of the conductive structures has a line shape that extends along a first direction...
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7547937 |
Semiconductor memory device and method for manufacturing the same
A semiconductor memory device includes a first word-line, a first non-inverted bit-line, a first inverted bit-line, a first global interconnection layer, a first memory capacitor having a first...
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7547933 |
Semiconductor device and manufacturing method of a semiconductor device
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular...
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7544986 |
System including integrated circuit structures formed in a silicone ladder polymer layer
A method of forming integrated circuit structures, such as capacitors and conductive plugs, within contact openings formed in a photosensitive silicone ladder polymer (PVSQ) is disclosed. Contact...
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7541635 |
Semiconductor fabrication using a collar
In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of...
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7541633 |
Phase-change RAM and method for fabricating the same
A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage...
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7538375 |
Capacitor structure of semiconductor device and method of fabricating the same
A semiconductor device having superior capacitance may include interconnections formed on a semiconductor substrate, an interlayer insulation layer on the interconnections and having vias exposing...
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7538371 |
CMOS image sensor integrated with 1-T SRAM and fabrication method thereof
A CMOS image sensor integrated with 1T-SRAM is provided on a substrate having a pixel array part, a logic circuit part, and a memory part by adding only one photoresist process. There are a...
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7538007 |
Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed...
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7535046 |
Dielectric memory and manufacturing method thereof
As an oxygen diffusion prevention layer, a multilayer film formed by a metal nitride and a noble metal element. As an interlayer insulation film on the oxygen diffusion prevention layer, a plasma...
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7531863 |
Semiconductor device and method of fabricating the same
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor...
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7531862 |
Semiconductor device having ferroelectric substance capacitor
The invention provides a semiconductor device having a ferroelectric substance capacitor small in the occupying area and large in capacitance and a semiconductor device having a ferroelectric...
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7528435 |
Semiconductor constructions
The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material...
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7528432 |
Semiconductor device having a capacitor and protection insulating films for same
There is provided a semiconductor device manufacturing method which comprises the steps of forming a first insulating film over a silicon substrate (semiconductor substrate), forming a lower...
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7528431 |
Semiconductor device having isolation pattern in interlayer insulating layer between capacitor contact plugs and methods of fabricating the same
A semiconductor device having an isolation pattern inside an interlayer insulating layer between capacitor contact plugs and methods of fabrication the same: The semiconductor device includes an...
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7528430 |
Electronic systems
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the...
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7525143 |
Dram device having capacitor
In a DRAM device having a capacitor and a method thereof, the capacitor included in the device is characterized to have a lower electrode that passes through a plurality of interlayer insulating...
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