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9041154 Contact structure and semiconductor memory device using the same  
A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery...
9035368 Semiconductor device  
Provided is a semiconductor device including first and second semiconductor pillars formed on a surface of a semiconductor substrate and aligning in a first direction; a first interconnect...
9035366 Semiconductor device and manufacturing method therefor  
A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a...
9013006 Semiconductor device and manufacturing method of the same  
A method for manufacturing a semiconductor device having a field-effect transistor, including forming a trench in a semiconductor substrate, forming a first insulating film in the trench, forming...
9006810 DRAM with a nanowire access transistor  
A semiconductor nanowire is formed integrally with a wraparound semiconductor portion that contacts sidewalls of a conductive cap structure located at an upper portion of a deep trench and...
9006761 Light-emitting device  
A light-emitting device includes a substrate (4), a light-emitting element (10) mounted on the substrate (4), a first resin (12) disposed to cover an upper portion of the light-emitting element...
8993396 Capacitor and method for fabricating the same  
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer;...
8994085 Integrated circuit including DRAM and SRAM/logic  
An integrated circuit comprising an N+ type layer, a buffer layer arranged on the N+ type layer; a P type region formed on with the buffer layer; an insulator layer overlying the N+ type layer, a...
8987086 MIM capacitor with lower electrode extending through a conductive layer to an STI  
The present disclosure provides a semiconductor device that includes a semiconductor substrate, an isolation structure formed in the semiconductor substrate, a conductive layer formed over the...
8987800 Semiconductor structures with deep trench capacitor and methods of manufacture  
An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI)...
8969938 Method and structure for forming on-chip high quality capacitors with ETSOI transistors  
An ETSOI transistor and a capacitor are formed respectively in a transistor and capacitor region thereof by etching through an ETSOI and thin BOX layers in a replacement gate HK/MG flow. The...
8963281 Simultaneous isolation trench and handle wafer contact formation  
Techniques are described to simultaneously form an isolation trench and a handle wafer contact without additional mask steps. In one or more implementations, an isolation trench and a handle wafer...
8952536 Semiconductor device and method of fabrication  
A semiconductor memory device employs a SONOS type memory architecture and includes a bit line diffusion layer in a shallow trench groove in which a conductive film is buried. This makes it...
8946045 Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)  
A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is...
8941164 Semiconductor devices including capacitor support pads  
A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the...
8937344 Semiconductor device and method of manufacturing the same  
The semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region defined therein, semiconductor memory elements formed over the semiconductor...
8937345 Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact  
An integrated circuit includes an active transistor laterally adjacent to a trench capacitor formed in a semiconductor substrate, the active transistor comprising a source junction and a drain...
8936992 Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate  
Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material...
8932932 Highly scalable trench capacitor  
An improved trench structure, and method for its fabrication are disclosed. Embodiments of the present invention provide a trench in which the collar portion has an air gap instead of a solid...
8928057 Uniform finFET gate height  
A method including providing fins etched from a semiconductor substrate and covered by an oxide layer and a nitride layer, the oxide layer being located between the fins and the nitride layer,...
8921911 Vertical semiconductor charge storage structure  
A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and...
8916918 Semiconductor device having fin-shaped field effect transistor and manufacturing method thereof  
Disclosed is a semiconductor device including: an active region defined by an element isolation region; a gate trench going across the active region to define source/drain regions on both sides...
8907409 Semiconductor device having buried bit lines and method for fabricating the same  
A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal...
8907415 High switching trench MOSFET  
A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode...
8901629 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate divided into a cell region and a peripheral circuit region defined in a first direction, wherein the peripheral circuit region is divided...
8890226 Strained channel dynamic random access memory devices  
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
8884288 Semiconductor structure with means for testing metal-insulator-metal capacitors  
The present invention provides a semiconductor structure for testing MIM capacitors. The semiconductor structure comprises: a first metal layer comprising at least a first circuit area and a...
8878270 Semiconductor memory device  
A semiconductor memory device including a bit line, a word line, a transistor, and a capacitor is provided. The transistor includes source and drain electrodes; an oxide semiconductor film in...
8860113 Creating deep trenches on underlying substrate  
A semiconductor structure is disclosed in which, in an embodiment, a first substrate includes at least one buried plate disposed in an upper part of the first substrate. Each of the at least one...
8853762 Structure for protecting metal-insulator-metal capacitor in memory device from charge damage  
A dynamic random access memory (DRAM) device has a metal-insulator-metal (MIM) capacitor electrically connected to a PN junction diode through a metal bridge for protecting the MIM capacitor from...
8853048 Streamlined process for vertical semiconductor devices  
The present disclosure provides a streamlined approach to forming vertically structured devices such as deep trench capacitors. Trenches and a contact plate bridging the trenches are formed using...
8835250 FinFET trench circuit  
A finFET trench circuit is disclosed. FinFETs are integrated with trench capacitors by employing a trench top oxide over a portion of the trench conductor. A passing gate is then disposed over the...
8836003 Lateral epitaxial grown SOI in deep trench structures and methods of manufacture  
Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer including a substrate, buried oxide layer (BOX) and...
8829585 High density memory cells using lateral epitaxy  
In a vertical dynamic memory cell, monocrystalline semiconductor material of improved quality is provided for the channel of an access transistor by lateral epitaxial growth over an insulator...
8816419 Semiconductor device  
Provided is a semiconductor device having a high switching speed. A semiconductor device is provided with an n-type epitaxial layer having a plurality of trenches arranged at prescribed intervals;...
8809994 Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate  
Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material...
8802990 Self-aligned nano-scale device with parallel plate electrodes  
A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the...
8803285 Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof  
A semiconductor device has a capacitive structure formed by sequentially layering, on a wiring or conductive plug, a lower electrode, a capacitive insulation film, and an upper electrode. The...
8796044 Ferroelectric random access memory with optimized hardmask  
Device structures, fabrication methods, and design structures for a capacitor of a memory cell of ferroelectric random access memory device. The capacitor may include a first electrode comprised...
8791512 Matrix imaging device having photosites with global shutter charge transfer  
An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor...
8779490 DRAM with dual level word lines  
A top semiconductor layer and conductive cap structures over deep trench capacitors are simultaneously patterned by an etch. Each patterned portion of the conductive cap structures constitutes a...
8779491 3D via capacitor with a floating conductive plate for improved reliability  
The present invention provides a 3D via capacitor and a method for forming the same. The capacitor includes an insulating layer on a substrate. The insulating layer has a via having sidewalls and...
8778770 Semiconductor device and method for manufacturing the same  
A semiconductor device comprises a trench isolation. The trench isolation is formed in a surface of a semiconductor substrate to define an active region a well region, and a bottom of the trench...
8779506 Semiconductor component arrangement comprising a trench transistor  
Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one...
8772850 Embedded DRAM memory cell with additional patterning layer for improved strap formation  
A method of forming a memory cell including forming trenches in a layered semiconductor structure, each trench having an inner sidewall adjacent a section of the layered semiconductor structure...
8759192 Semiconductor device having wiring and capacitor made by damascene method and its manufacture  
A wiring trench is formed in an interlayer insulating film partway in the depth direction of the interlayer insulating film. A via hole is formed extending from the bottom of the wiring trench to...
8759893 Horizontal interdigitated capacitor structure with vias  
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a surface that is defined by a first axis and a second axis perpendicular to the first...
8754461 Spacer isolation in deep trench  
A method of forming improved spacer isolation in deep trench including recessing a node dielectric, a first conductive layer, and a second conductive layer each deposited within a deep trench...
8748961 Buried bit line process and scheme  
The embodiment provides a buried bit line process and scheme. The buried bit line is disposed in a trench formed in a substrate. The buried bit line includes a diffusion region formed in a portion...
8735906 Semiconductor device and method of manufacturing semiconductor device  
The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface...