Patents in Class 257/301

Matches 1 - 50 out of 857

Match	Document	Document Title
1	7615816	Buried plate structure for vertical dram devices A buried plate region for a semiconductor memory storage capacitor is self aligned with respect to an upper portion of a deep trench containing the memory storage capacitor.
2	7612399	Semiconductor integrated circuit devices A semiconductor integrated circuit device includes a first interlayer insulation film having a contact therein. The contact has an upper surface and including a void therein having an open upper...
3	7608881	Thin-film device and method of manufacturing same A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor...
4	7608876	Merged MOS-bipolar capacitor memory cell A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. The gain cell includes a vertical MOS transistor having a source region, a drain region, and a...
5	7605418	Methods of fabricating capacitor A fabricating method of a capacitor is disclosed. Particularly, a fabricating method of a capacitor which forms a capacitor in the place where the insulation layer of an STI region is removed,...
6	7605034	Integrated circuit memory cells and methods of forming An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second...
7	7598575	Semiconductor die with reduced RF attenuation The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly...
8	7592220	Capacitance process using passivation film scheme In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a...
9	7588984	Method to define a transistor gate of a DRAM and the transistor gate using same A method to determine the predetermined location of a transistor gate of a dynamic random access memory (DRAM). A trench capacitor is respectively provided in a silicon substrate at the two sides...
10	7586142	Semiconductor device having metal-insulator-metal capacitor and method of fabricating the same A semiconductor device having a metal-insulator-metal (MIM) capacitor is provided and can include a lower line formed in a semiconductor substrate; a first interlayer insulating layer formed over...
11	7582924	Semiconductor devices having polymetal gate electrodes Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate...
12	7582902	Raw material carbon composition for carbon material for electrode in electric double layer capacitor The present invention provides a raw material carbon composition that is converted to a carbon material for an electrode in an electric double layer capacitor that can develop a high level of...
13	7582525	Method for fabricating capacitor of semiconductor memory device using amorphous carbon A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the...
14	7579234	Method for fabricating memory device with recess channel MOS transistor A method for fabricating line type recess channel MOS transistors utilizes a lithography process to form line type gate trenches in the line type recess channel MOS transistors before finishing a...
15	7576440	Semiconductor chip having bond pads and multi-chip package A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is...
16	7576381	Memory structure and fabricating method thereof A memory structure including a substrate, a first dielectric layer, a first conducting layer, a second conducting layer, a second dielectric layer, a spacer and a doped region is provided. The...
17	7575971	Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
18	7569878	Fabricating a memory cell array A DRAM memory cell array is fabricated such that, for each memory cell of the array, the gate electrode is initially produced such that it is insulated from all the other gate electrodes assigned...
19	7569451	Method of fabricating an isolation shallow trench A method of fabricating an isolation shallow trench contains providing a substrate with at least a deep trench, forming a cap layer on the upper portion of the deep trench, forming a crust layer on...
20	7566619	Methods of forming integrated circuit devices having field effect transistors of different types in different device regions A method of forming an integrated circuit device includes forming a non-planar field-effect transistor in a cell array portion of a semiconductor substrate and forming a planar field-effect...
21	7564086	Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retention A DRAM cell in a substrate has a deep trench (DT) extending from a surface of the substrate into the substrate, a word line (WL) formed on the surface of the substrate adjacent the deep trench, and...
22	7563669	Integrated circuit with a trench capacitor structure and method of manufacture An integrated circuit device having a capacitor structure. In one form of the invention, an integrated circuit device includes a capacitor structure formed along a surface of a semiconductor layer....
23	7560764	SONOS memory device having curved surface and method for fabricating the same A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and...
24	7560761	Semiconductor structure including trench capacitor and trench resistor A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor...
25	7560359	Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures In a method of forming an asymmetric recess, an asymmetric recessed gate structure filling the asymmetric recess, a method of forming the asymmetric recessed gate structure, a semiconductor device...
26	7554148	Pick-up structure for DRAM capacitors A pick-up structure for DRAM capacitors and a DRAM process are described. A substrate with trenches therein is provided, wherein the trenches include a first trench and the sidewall of each of the...
27	7547977	Semiconductor chip having bond pads In one embodiment, a semiconductor chip has one or more peripheral bond pads. The semiconductor chip comprises a semiconductor substrate having a cell region and a peripheral circuit region...
28	7541634	Trench capacitor A trench capacitor including a substrate, at least a group of capacitor units, an isolation structure and a conductive layer is described. The substrate includes a first trench and a second trench....
29	7535695	DRAM cells and electronic systems The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium...
30	7535045	Checkerboard deep trench dynamic random access memory cell array layout A checkerboard deep trench dynamic random access memory cell array layout is disclosed, which includes a substrate, a plurality of gate conductor lines disposed on the substrate, a plurality of...
31	7534692	Process for producing an integrated circuit comprising a capacitor An integrated circuit is produced to include interconnection levels each incorporating a metallization level covered with an insulating material. The integrated circuit includes at least one...
32	7531861	Trench capacitors with insulating layer collars in undercut regions Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include...
33	7525142	Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same A trench capacitor is formed in a semiconductor substrate with a capacitor insulating film. The trench has a conductive layer as storage node electrode buried in a trench. The conductive layer...
34	7521748	Method to eliminate arsenic contamination in trench capacitors A trench capacitor structure in which arsenic contamination is substantially reduced and/or essentially eliminated from diffusing into a semiconductor substrate along sidewalls of a trench opening...
35	7521740	Semiconductor device comprising extensions produced from material with a low melting point A semiconductor device comprises a gate electrode ( 1 ) and a gate insulating layer ( 2 ) both surrounded by a spacer ( 3 ) and produced on a surface (S) of a substrate ( 100 ) of a first...
36	7501676	High density semiconductor memory A memory cell, array and device include cross-shaped active areas and polysilicon gate areas disposed over arm portions of adjacent cross-shaped active areas. The polysilicon gate areas couple word...
37	7495275	Semiconductor device and dram integrated circuit device A semiconductor device with a multi-layer wiring structure includes a first conductive region: a second conductive region that has an upper surface located in a higher position than the first...
38	7494891	Trench capacitor with void-free conductor fill A method forms a node dielectric in a bottle shaped trench and then deposits an initial conductor within the lower portion of the bottle shaped trench, such that a void is formed within the initial...
39	7494890	Trench capacitor and method for manufacturing the same A structure of a trench capacitor and method for manufacturing the same. The method includes providing a substrate having a defined memory area and logic area, and performing an STI process to form...
40	7489002	Memory having a vertical transistor Structures and fabrication methods for a memory are provided. The memory includes an array of memory cells, where each memory cell has a pillar extending outwardly from a substrate. The pillar...
41	7489000	Capacitor structures with oxynitride layer between capacitor plate and capacitor dielectric layer Methods for fuming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide (NO)...
42	7485910	Simplified vertical array device DRAM/eDRAM integration: method and structure The present invention provides a semiconductor structure that includes an active wordline located above a semiconductor memory device and a passive wordline located adjacent to said active wordline...
43	7485909	Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate formed with a trench having a sidewall including a middle point. The trench includes a first part extending from a surface of the...
44	7482066	Light-emitting polymer composition and organic EL display device using the same A light-emitting polymer composition for a light-emitting layer in an organic EL display device includes at least first and second light-emitting polymers having different interfacial...
45	7479424	Method for fabricating an integrated circuit comprising a three-dimensional capacitor A capacitor fabricated, within an integrated circuit, has at least two capacitive trenches extending within a dielectric material. A metal layer is produced which is embedded in the dielectric...
46	7476923	Memory device and fabrication thereof A semiconductor memory device. A trench capacitor disposed at a lower portion of a trench in a substrate, in which the trench capacitor comprises a filling electrode layer and a collar dielectric...
47	7476922	Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same A logic device having a vertically extending MIM capacitor between interconnect layers includes a semiconductor substrate. A lower interconnect layer is located over the semiconductor substrate,...
48	7473953	Method for fabricating metallic bit-line contacts A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with...
49	7473596	Methods of forming memory cells An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second...
50	7468306	Method of manufacturing a semiconductor device A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on...

Matches 1 - 50 out of 857

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