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7420238 Semiconductor constructions  
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
7420237 Capacitor element  
A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a...
7420200 Damascene phase change memory  
A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase...
7417302 Semiconductor device and method of manufacturing the same  
In a method of manufacturing a semiconductor device, a first insulation layer on the substrate is patterned to form a first opening having a first width. A lower electrode is formed along an inner...
7417285 Semiconductor device having a trench capacitor and a MOSFET connected by a diffusion layer and manufacturing method thereof  
A semiconductor device comprises a semiconductor substrate having a first conductivity type, a trench capacitor, provided in the semiconductor substrate, having a charge storage region, a gate...
7416952 Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer  
A dielectric interlayer, especially for a storage capacitor, is formed from a layer sequence subjected to a temperature process, wherein the layer sequence has at least a first metal oxide layer...
7414278 Semiconductor device with shallow trench isolation which controls mechanical stresses  
The semiconductor device comprises a semiconductor substrate 10 with a trench 16 a and a trench 16 b formed in; a device isolation film 32 a buried in the trench 16 a and including a...
7411256 Semiconductor integrated circuit device capacitive node interconnect  
A semiconductor integrated circuit device is provided, which involves inhibiting a pattern change in the node interconnect and an increase of number of manufacturing process, when the capacitor is...
7408232 Semiconductor device and method for fabricating the same  
A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a...
7408229 Structure and method for accurate deep trench resistance measurement  
A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a deep trench formed within a semiconductor substrate. The deep trench has a...
7408216 Device, system, and method for a trench capacitor having micro-roughened semiconductor surfaces  
Some embodiments of the invention include a memory cell having a vertical transistor and a trench capacitor. The trench capacitor includes a capacitor plate with a roughened surface for increased...
7408215 Dynamic random access memory  
A DRAM structure on a silicon substrate has an active area, gate conductors, deep trench capacitors, and vertical transistors. The deep trench capacitors are formed at intersections of the active...
7408214 Dynamic random access memory trench capacitors  
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
7405438 Capacitor constructions and semiconductor structures  
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the...
7404247 Method for making a pressure sensor  
A method for making a pressure sensor including the steps of providing a substrate and forming or locating a pressure sensing component on the substrate. The method further includes the step of,...
7402860 Method for fabricating a capacitor  
The present invention relates to a method of fabricating a capacitor in a semiconductor substrate. The capacitor is fabricated such that the capacitor comprises: a trench inside a substrate, the...
7402859 Field effect semiconductor switch and method for fabricating it  
A field effect semiconductor comprises a semiconductor layer having a surface, a first and a second semiconductor region in the semiconductor layer, which are arranged next to one another at the...
7394124 Dynamic random access memory device  
A dynamic random access memory (DRAM) is provided. The dynamic random access memory includes a deep trench capacitor disposed in a first trench of a substrate, a conductive layer disposed in a...
7391070 Semiconductor structures and memory device constructions  
The invention includes a semiconductor structure having a gateline lattice surrounding vertical source/drain regions. In some aspects, the source/drain regions can be provided in pairs, with one of...
7388439 Low pass filter and electronic device  
The electronic device ( 100 ) of the invention comprises a semiconductor device ( 30 ) and a low-pass filter ( 20 ), which are present in a stacked configuration, and which together include a phase...
7388261 Structure and method for accurate deep trench resistance measurement  
A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a pair of deep trenches formed within a semiconductor substrate. The pair of deep...
7388244 Trench metal-insulator-metal (MIM) capacitors and method of fabricating same  
The present invention relates to a semiconductor device that contains a trench metal-insulator-metal (MIM) capacitor and a field effect transistor (FET). The trench MIM capacitor comprises a first...
7388243 Self-Aligned buried contact pair  
A self-aligned buried contact (BC) pair includes a substrate having diffusion regions; an oxide layer exposing a pair of diffusion regions formed on the substrate; bit lines formed between adjacent...
7387931 Semiconductor memory device with vertical channel transistor and method of fabricating the same  
In a semiconductor memory device having a vertical channel transistor a body of which is connected to a substrate and a method of fabricating the same, the semiconductor memory device includes a...
7384842 Methods involving silicon-on-insulator trench memory with implanted plate  
A method for fabricating silicon-on-insulator (SOI) trench memory includes forming a trench on a substrate, wherein a buried oxide layer is disposed on the substrate, a SOI layer is disposed on the...
7378692 Integrated electronic circuit comprising superposed components  
An integrated electronic circuit with at least at least one passive electronic component and at least one active electronic component. The passive electronic component is formed within an...
7375376 Semiconductor display device and method of manufacturing the same  
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long,...
7372093 DRAM memory with vertically arranged selection transistors  
The invention relates to a semiconductor memory, particularly a DRAM, in which the memory cells in each case have a trench capacitor arranged in a lower area of a trench hole and a vertical...
7371645 Method of manufacturing a field effect transistor device with recessed channel and corner gate device  
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench...
7368776 Semiconductor device comprising a highly-reliable, constant capacitance capacitor  
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to...
7365385 DRAM layout with vertical FETs and method of formation  
DRAM cell arrays having a cell area of less than about 4F 2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a...
7364965 Semiconductor device and method of fabrication  
A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film...
7361950 Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric  
A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having...
7358556 SRAM cell structure and manufacturing method thereof  
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the...
7358133 Semiconductor device and method for making the same  
A method for forming a semiconductor device is provided. The method comprises providing a substrate with recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates...
7352023 Constructions comprising hafnium oxide  
The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are...
7348596 Devices for detecting current leakage between deep trench capacitors in DRAM devices  
A test device for detecting current leakage between deep trench capacitors in DRAM devices. The test device is disposed in a scribe line region of a wafer. In the test device, a first trench...
7345334 Integrated circuit (IC) with high-Q on-chip discrete capacitors  
A semiconductor structure that may be a discrete capacitor, a Silicon On Insulator (SOI) Integrated Circuit (IC) including circuits with discrete such capacitors and/or decoupled by such discrete...
7344953 Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition  
On a substrate surface, which has been patterned in the form of a relief, of a substrate, typically of a semiconductor wafer, a deposition process is used to provide a covering layer on process...
7339224 Trench capacitor and corresponding method of production  
The invention relates to a trench capacitor, in particular for use in a semiconductor memory cell, comprising a trench ( 2 ), embodied in a substrate ( 1 ), a first region ( 1 a ), provided in the...
7335936 DRAM memory having vertically arranged selection transistors  
Memory cell having a trench capacitor that is constructed in a lower region of a substantially perpendicular trench hole, and which comprises an inner and an outer electrode, a dielectric layer...
7335598 Chemical-mechanical polishing method  
A chemical-mechanical polishing process for forming a metallic interconnect includes the steps of providing a semiconductor substrate having a first metallic line thereon, and then forming a...
7332761 Method for fabricating capacitor of semiconductor device  
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The semiconductor device includes: a bit line structure formed on a substrate and including stacked...
7332390 Semiconductor memory device and fabrication thereof  
A semiconductor memory device and fabrication method thereof. In a semiconductor memory device, each memory cell comprises a deep trench and a capacitor disposed on the lower portion thereof. A...
7326990 Semiconductor device and method for fabricating the same  
A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device....
7326986 Trench memory  
A trench device and method for fabricating same are provided. The trench device has a collar with a first portion that is doped and a second portion that is undoped. Fabrication of the partially...
7326985 Method for fabricating metallic bit-line contacts  
A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with...
7323739 Semiconductor device having recess and planarized layers  
A method for forming a floating gate semiconductor device such as an electrically erasable programmable read only memory is provided. The device includes a silicon substrate having an electrically...
7323737 DRAM constructions and electronic systems  
The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron...
7321149 Capacitor structures, and DRAM arrays  
A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in...
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