Matches 551 - 600 out of 866 < 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 >
Match Document Document Title
6365955 Cylindrical capacitor structure and method of manufacture  
A cylindrical capacitor structure and a corresponding method of manufacture. To form the cylindrical capacitor, a conductive section, an etching stop layer, a first insulation layer, a bit line...
6362043 Method for coupling to semiconductor device in an integrated circuit having edge-defined, sub-lithographic conductors  
An integrated circuit comprising stacked capacitor memory cells having sub-lithographic, edge-defined word lines and a method for forming such an integrated circuit. The method forms conductors...
6359299 Apparatus and method for forming controlled deep trench top isolation layers  
A method for controlling isolation layer thickness in deep trenches for semiconductor memories in accordance with the present invention includes the steps of providing a deep trench having a...
6359300 High aspect ratio deep trench capacitor having void-free fill  
A trench capacitor comprising a substrate, a trench formed in the substrate, and conductive doped germanium or silicon-germanium alloy fill material completely filling the trench. The process for...
6349052 DRAM cell arrangement and method for fabricating it  
A capacitor of a memory cell is produced in a depression (V) in a first substrate ( 1 ). The first substrate ( 1 ) is connected to a second substrate ( 2 ) in such a way that an insulating layer...
6344673 Multilayered quantum conducting barrier structures  
A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between...
6339228 DRAM cell buried strap leakage measurement structure and method  
A test structure and method for determining DRAM cell leakage. The cell leakage test structure includes a pair of buried strap test structures. Each buried strap test structure includes multiple...
6339241 Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch  
A memory cell structure including a planar semiconductor substrate. A deep trench is in the semiconductor substrate. The deep trench has a plurality of side walls and a bottom. A storage capacitor...
6339239 DRAM cell layout for node capacitance enhancement  
A layout pattern for increasing the spacing between the deep trenches of one cell pair and the deep trenches of an adjacent cell pair in an array of semiconductor DRAM cell pairs each of which cell...
6335557 Metal silicide as a barrier for MOM capacitors in CMOS technologies  
The present invention provides a semiconductor device having a metal oxide metal (MOM) capacitor formed over a semiconductor wafer. In one embodiment, the device is a MOM capacitor that includes a...
6333531 Dopant control of semiconductor devices  
A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The...
6333533 Trench storage DRAM cell with vertical three-sided transfer device  
A pair of dynamic random access memory cells having each end of the active area surrounded on three sides by a gate conductor. The width of each end of the active area that is surrounded by a gate...
6329234 Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow  
In many mixed-signal or radio frequency Rf applications, inductors and capacitors are needed at the same time. For a high performance inductor devices, a thick metal layer is needed to increase...
6326658 Semiconductor device including an interface layer containing chlorine  
A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the...
6323558 Method for fabricating a contact of a semiconductor device  
A method of fabricating a contact of a semiconductor memory device to prevent severe necking of a storage node despite misalignment thereof, and thus to prevent the falling-down of the storage...
6320215 Crystal-axis-aligned vertical side wall device  
A dynamic random access memory (DRAM) cell comprising a deep trench storage capacitor having an active transistor device partially disposed on a side wall of the trench. The side wall is aligned to...
6310375 Trench capacitor with isolation collar and corresponding manufacturing method  
The present invention provides a trench capacitor, particularly for use in a semiconductor memory cell (100), having an isolation collar (168) with a trench (108) formed in a substrate (101); said...
6310359 Structures containing quantum conductive barrier layers  
Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or...
6303953 Integrated capacitor bottom electrode with etch stop layer  
A process of forming a capacitor on a surface of a wafer having one or more word lines and an active area adjacent the word lines. The word lines are isolated from the active areas by isolation...
6297524 Multilayer capacitor structure having an array of concentric ring-shaped plates for deep sub-micron CMOS  
A capacitor structure having a first and at least a second conductor level of electrically conductive concentric ring-shaped lines. The conductive lines of the first and at least second levels are...
6297151 Method and structure for manufacturing contact windows in semiconductor process  
The invention relates to a semiconductor process, and in particular to a method and structure of manufacturing contact windows between different levels of two conductive layers (a upper conductive...
6288422 Structure and process for fabricating a 6F2 DRAM cell having vertical MOSFET and large trench capacitance  
A 6F 2 memory cell structure comprising a plurality of capacitors each located in a separate trench in a substrate; a pluralaity of transfer transistors each having a vertical gate dielectric, a...
6281539 Structure and process for 6F2 DT cell having vertical MOSFET and large storage capacitance  
A 6F 2 memory cell comprising a plurality of capacitors each located in a separate trench that is formed in a semiconductor substrate; a plurality of transfer transistors each having a vertical...
6281089 Method for fabricating an embedded flash memory cell  
A method for embedded flash cell fabrication beyond 0.35 Ξm generation. First, a relatively thick field oxide layer is formed on the P-type substrate to separate the flash cell areas and logic...
6281557 Read-only memory cell array and method for fabricating it  
A read-only memory cell array has vertical MOS transistors formed on trench walls, and is programmed with a programming mask which covers only the areas at which a transistor is not to be produced....
6278149 Plurality of trench capacitors used for the peripheral circuit  
In a DRAM-logic embedded integrated circuit in which a DRAM including trench capacitors of the deep trench structure and a logic circuit are mixedly formed in a semiconductor substrate, a plurality...
6274899 Capacitor electrode having conductive regions adjacent a dielectric post  
A dielectric film (110) is formed overlying a semiconductor device substrate (10). A dielectric post (204) having an outer peripheral boundary having sidewalls is formed over the dielectric film...
6274453 Memory cell configuration and production process therefor  
A memory cell configuration with many ferroelectric or dynamic memory cells provided in a semiconductor substrate. Alternating trenches and lands extend parallel in a longitudinal direction of a...
6271555 Borderless wordline for DRAM cell  
A semiconductor structure and method of making the same are disclosed which includes a DRAM cell which has a transistor which includes a gate. The gate includes an individual segment of gate...
6271556 High density memory structure  
A dynamic random access memory (DRAM) integrated circuit (10). The DRAM (10) includes a recessed region (20) defined in a semiconductor substrate (22). This recessed region has substantially...
6271557 Center node for deep trench capacitors  
A trench capacitor cell, in accordance with the present invention, includes a trench having an outer electrode formed in a substrate adjacent to the trench. A storage node is formed in the trench...
6271573 Semiconductor device with gate structure and method of manufacturing the same  
Variations in threshold voltage among MOS devices are prevented by forming a metal gate electrode having an average grain size of 30 nm or less on a gate insulating film.
6268620 Method of forming capacitors on integrated circuit  
A method of making a semiconductor device, comprises the steps of providing an insulating layer, forming a series of holes in the insulating layer, depositing a first layer of a metal, or a...
6265744 Semiconductor device having a trench structure and method for manufacturing the same  
An electronic field reduction in a corner of a trench section of a semiconductor is achieved by forming a p-type base region in a source area of an n-type drain region, and both an n-type source...
6265741 Trench capacitor with epi buried layer  
A trench capacitor with an epitaxial layer in the lower portion of the trench. The epitaxial layer may be doped to serve as a buried plate.
6262450 DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate  
A DRAM capacitor contact comprised of a silicon oxide layer with a trench having sidewalls and a form in the silicon oxide layer. A dielectric liner is coated on the sidewalls of the trench. A...
6262448 Memory cell having trench capacitor and vertical, dual-gated transistor  
A DRAM cell is disposed in an electrically isolated region of a semiconductor body. The cell includes a storage capacitor disposed in a trench. The capacitor is disposed entirely within the...
6258689 Low resistance fill for deep trench capacitor  
Trench capacitors are fabricated utilizing a method which results in a metallic nitride as a portion of a node electrode in a lower region of the trench. The metallic nitride-containing trench...
6259127 Integrated circuit container having partially rugged surface  
Disclosed is a bi-level container capacitor in which a bottom portion is smooth and an upper portion is rugged or rough. Once the container has been formed within a thick insulating layer, a...
6259128 Metal-insulator-metal capacitor for copper damascene process and method of forming the same  
A capacitor structure formed on a semiconductor substrate may include a first interconnect wiring (such as copper damascene) and a first conductive barrier layer in contact with the first...
6255682 Trench DRAM cells with self-aligned field plate  
The capacitor includes trenches formed in a semiconductor substrate. Recess portions are formed adjacent to the top portion of the openings of the trenches. An isolation layer is formed on the...
6255684 DRAM cell configuration and method for its production  
A DRAM cell configuration includes a vertical MOS transistor per memory cell. First source/drain regions of the transistor each belong to two adjacent transistors and adjoin a bit line. Second...
6255683 Dynamic random access memory  
A memory cell formed in a semiconductor body includes a vertical trench with a polysilicon fill as a storage capacitor and a field effect transistor having a source formed in the sidewall of the...
6255686 Semiconductor storage device including short circuit avoiding structure and method of fabricating thereof  
In a semiconductor storage device, an access transistor, which has a gate electrode and a pair of impurity diffusion layers, is formed at a device activation region defined by a device isolation...
6249016 Integrated circuit capacitor including tapered plug  
An integrated circuit capacitor includes a first dielectric layer adjacent a substrate and having a trench therein, and a metal plug comprising an upper portion extending upwardly into the trench,...
6246086 Structure of capacitor for dynamic random access memory and method of manufacturing thereof  
A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this...
6246085 Semiconductor device having a through-hole of a two-level structure  
A semiconductor memory device comprises a bottom electrode of a capacitor connected to a source region of a semiconductor substrate through a contact plug formed in a portion of a through-hole. The...
6235575 Semiconductor device and method for manufacturing same  
A gate electrode 5 is provided on a surface of a semiconductor substrate 1, an insulation film 6 being formed over the gate electrode 5 and the side wall of the gate electrode 5 being covered by an...
6236077 Trench electrode with intermediate conductive barrier layer  
Reduced scale trench capacitor structures of improved reliability and decreased series resistance are enabled by the creation and use of conductive barrier layers at intermediate points in the...
6232628 Semiconductor device having stacked capacitor structure  
In a semiconductor device comprising a cylindrical storage node, the surface area of the storage node is increased by forming silicone grains in an amorphous silicone film by a heat treatment only...
Matches 551 - 600 out of 866 < 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 >