|
Match
|
Document |
Document Title |
|
|
8178864 |
Asymmetric barrier diode
A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and...
|
|
|
8173992 |
Transistor or triode structure with tunneling effect and insulating nanochannel
A microelectronic device is provided with at least one transistor or triode with Fowler-Nordheim tunneling current modulation, and supported on a substrate. The triode or the transistor includes at...
|
|
|
8093680 |
Metal-insulator-metal-insulator-metal (MIMIM) memory device
The present memory device includes first and second electrodes, first and second insulating layers between the electrodes, the first insulating layer being in contact with the first electrode, the...
|
|
|
8076666 |
Use of sack geometry to implement a single qubit phase gate
An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit ...
|
|
|
8063449 |
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming...
|
|
|
8049305 |
Stress-engineered resistance-change memory device
A resistance-change memory device using stress engineering is described, including a first layer including a first conductive electrode, a second layer above the first layer including a...
|
|
|
8039797 |
Semiconductor for sensing infrared radiation and method thereof
A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting...
|
|
|
8030734 |
Forming phase change memories with a breakdown layer sandwiched by phase change memory material
A phase change memory cell may be formed with a pair of chalcogenide phase change layers that are separated by a breakdown layer. The breakdown layer may be broken down prior to use of the memory...
|
|
|
8030725 |
Apparatus and methods for detecting evaporation conditions
Apparatus and methods for detecting evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, such as GaAs wafers, are disclosed. One such apparatus can include a...
|
|
|
8023891 |
Interconnection network between semiconductor structures, integrated circuit and method for transmitting signals
The invention relates to an interconnection network and an integrated circuit and a method for manufacturing the same. Furthermore, the invention relates to a method for signal transfer between...
|
|
|
8017935 |
Parallel redundant single-electron device and method of manufacture
A method of manufacturing a parallel redundant array of single-electron devices. The method includes (a) providing a mask for diffusing a plurality of n-doped regions defined by a first set of a...
|
|
|
7985965 |
Quantum computing device and method including qubit arrays of entangled states using negative refractive index lenses
A quantum computing device and method employs qubit arrays of entangled states using negative refractive index lenses. A qubit includes a pair of neutral atoms separated by or disposed on opposite...
|
|
|
7985964 |
Light-emitting semiconductor device
The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to...
|
|
|
7982209 |
Memory cell comprising a carbon nanotube fabric element and a steering element
A rewritable nonvolatile memory cell is disclosed comprising a steering element in series with a carbon nanotube fabric. The steering element is preferably a diode, but may also be a transistor....
|
|
|
7977668 |
Multilayer structure with zirconium-oxide tunnel barriers and applications of same
A multilayer structure with zirconium-oxide tunnel barriers. In one embodiment, the multilayer structure includes a first niobium (Nb) layer, a second niobium (Nb) layer, and a plurality of...
|
|
|
7977667 |
Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
Methods of forming planar carbon nanotube (“CNT”) resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material, patterning the first die...
|
|
|
7968870 |
Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device
A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed...
|
|
|
7932513 |
Magnetic random access memory, and write method and manufacturing method of the same
A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a...
|
|
|
7932514 |
Microwave readout for flux-biased qubits
A method for determining whether a quantum system comprising a superconducting qubit is occupying a first basis state or a second basis state once a measurement is performed is provided. The...
|
|
|
7928561 |
Device for thermal transfer and power generation
A system is provided. The system includes a device that includes top and bottom thermally conductive substrates positioned opposite to one another, wherein a top surface of the bottom thermally...
|
|
|
7910916 |
Multi-junction type solar cell device
In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type...
|
|
|
7858506 |
Diodes, and methods of forming diodes
Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating...
|
|
|
7858966 |
Protected qubit based on superconducting current mirror
A qubit implementation based on exciton condensation in capacitively coupled Josephson junction chains is disclosed. The qubit may be protected in the sense that unwanted terms in its effective...
|
|
|
7851877 |
Logic circuit and single-electron spin transistor
A logic circuit that can reconfigure its functions in a nonvolatile manner and a single-electron transistor to be used in the logic circuits are provided. The logic circuit has a single-electron...
|
|
|
7847283 |
Three-dimensional memory cells
The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a...
|
|
|
7800098 |
Array substrate for liquid crystal display device and method of fabricating the same
An array substrate for a liquid crystal display device includes a substrate having a display area and a driving circuit area, a first semiconductor layer formed on the substrate in the display...
|
|
|
7745816 |
Single-photon detector with a quantum dot and a nano-injector
A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the...
|
|
|
7709825 |
Electrically programmable hyper-spectral focal-plane-array
A voltage supply is connected to provide a variable bias voltage to a plurality of optical quantum tunneling photodetectors to thereby vary the spectral response of the photodetectors and thus...
|
|
|
7619437 |
Coupling methods and architectures for information processing
A structure comprising (i) a first information device, (ii) a second information device, (iii) a first coupling element and (iv) a second coupling element is provided. The first information device...
|
|
|
7612733 |
Transition region for use with an antenna-integrated electron tunneling device and method
An electron tunneling device includes a first non-insulating strip and a second non-insulating strip spaced apart from one another such that first and second end portions, respectively, of the...
|
|
|
7566943 |
Photoelectric conversion device and solid-state imaging device
A photoelectric conversion device including a photoelectric conversion part including a pair of electrodes and a photoelectric conversion layer provided between the pair of electrodes, wherein the...
|
|
|
7560750 |
Solar cell device
In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type...
|
|
|
7538338 |
Memory using variable tunnel barrier widths
A memory using a tunnel barrier is disclosed. A memory element includes a tunneling barrier and two conductive materials. The conductive material typically has mobile ions that either move towards...
|
|
|
7531830 |
Spin-polarization devices using rare earth-transition metal alloys
A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at...
|
|
|
7521708 |
High sensitivity ring-SQUID magnetic sensor
More sensitive (especially due to reduced interference of flux noise) than a conventional SQUID, an inventive SQUID's major component is a hollow cylindric structure comprising one or more annular...
|
|
|
7514708 |
80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in...
|
|
|
7479652 |
Qubit readout via controlled coherent tunnelling to probe state
This invention concerns quantum computers in which the qubits are closed systems, in that the particle or particles are confined within the structure. A “site” can be produced by any method of con...
|
|
|
7453084 |
Spin transistor with ultra-low energy base-collector barrier
A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective...
|
|
|
7449713 |
Semiconductor memory device
A semiconductor memory device includes a semiconductor substrate, a semiconductor layer, a source/drain layer, first and second insulating films, and first and second gate electrodes. The...
|
|
|
7449710 |
Vacuum jacket for phase change memory element
A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper...
|
|
|
7417227 |
Scanning interference electron microscope
The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an...
|
|
|
7402833 |
Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer...
|
|
|
7379321 |
Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic...
|
|
|
7355261 |
Thin film device, thin film device module, and method of forming thin film device module
A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 108 Ω·cm to 1010 Ω·cm, wit...
|
|
|
7351997 |
Single photon receptor
A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a...
|
|
|
7351996 |
Method of increasing efficiency of thermotunnel devices
The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is...
|
|
|
7335909 |
Superconducting phase-charge qubits
A quantum computing structure comprising a superconducting phase-charge qubit, wherein the superconducting phase-charge qubit comprises a superconducting loop with at least one Josephson junction....
|
|
|
7326598 |
Method of fabricating polycrystalline silicon
A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region...
|
|
|
7208784 |
Single-electron transistor for detecting biomolecules
A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the...
|
|
|
7180115 |
DRAM cell structure with tunnel barrier
The invention relates to a transistor that is provided with a first source/drain area (S/D1), a channel area (KA) adjacent thereto, a second source/drain area (S/D 2) adjacent thereto, a gate...
|