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7619237 Programmable resistive memory cell with self-forming gap  
A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by...
7615771 Memory array having memory cells formed from metallic material  
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality...
7615769 Nonvolatile memory device and fabrication method thereof  
A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM...
7612360 Non-volatile memory devices having cell diodes  
An integrated circuit memory cell includes a substrate having a first semiconductor region of first conductivity type (e.g., N-type) therein, which may define a portion of a word line within the...
7612359 Microelectronic devices using sacrificial layers and structures fabricated by same  
A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are...
7612358 Nonvolatile nanochannel memory device using mesoporous material  
A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer...
7608851 Switch array circuit and system using programmable via structures with phase change materials  
A programmable via structure that includes at least two phase change material vias each directly contacting a heating element, the via structure further including a first terminal in contact with a...
7608848 Bridge resistance random access memory device with a singular contact structure  
A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. The first...
7598112 Phase change memory devices and their methods of fabrication  
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
7592617 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method  
A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch...
7589344 Semiconductor device and method of producing the same  
In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely...
7589342 Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same  
Disclosed is a phase change memory device including: a semiconductor substrate formed with a first insulating interlayer having a first contact hole; a contact plug formed in such a manner so as to...
7586777 Resistance variable memory with temperature tolerant materials  
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of...
7582890 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof  
Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel...
7582546 Device with damaged breakdown layer  
A device utilizing a breakdown layer in combination with a programmable resistance material, a phase-change material or a threshold switching material. The breakdown layer having damage.
7577024 Streaming mode programming in phase change memories  
A streaming programming mode may be implemented on user command in a phase change memory. In the streaming programming mode, accelerated programming may be achieved by ramping up to a voltage that...
7576350 Programmable resistance memory element with multi-regioned contact  
An electrically programmable memory element comprising a programmable resistance material and an electrical contact. The electrical contact having at least two portion wherein the first portion has...
7575776 Reflowing of a phase changeable memory element to close voids therein  
A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in...
7573058 Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories  
A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change...
7569845 Phase-change memory and fabrication method thereof  
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first...
7566895 Phase change memory device and method for fabricating the same  
A phase change memory device is provided. The phase change memory device includes a substrate comprising a stacked structure. The stacked structure comprises a plurality of insulating layers and...
7560724 Storage device with reversible resistance change elements  
It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having...
7551476 Resistive memory having shunted memory cells  
A memory includes a bit line and a plurality of resistive memory cells coupled to the bit line. Each resistive memory cell is programmable to each of at least three resistance states. The memory...
7550823 Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same  
A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide...
7550756 Semiconductor memory  
In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an...
7547906 Multi-functional chalcogenide electronic devices having gain  
Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of...
7547905 Programmable conductor memory cell structure and method therefor  
In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to...
7545667 Programmable via structure for three dimensional integration technology  
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device...
7541608 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells  
Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two...
7541607 Electrically rewritable non-volatile memory element and method of manufacturing the same  
A non-volatile memory element includes a bottom electrode 12 , a bit line 14 provided on the bottom electrode 12 , and a recording layer 15 containing phase change material connected between...
7539038 Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material  
A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an...
7538337 Nanowire semiconductor device  
Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate may be used to control conduction along the nanowires, in which case one of the contacts is a...
7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array  
A non-volatile method with a self-aligned RRAM element. The method includes a lower electrode element, generally planar in form, having an inner contact surface. At the top of the device is a upper...
7531824 High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate  
An apparatus and method for fabricating high value inductors embedded on semiconductor integrated circuit. The apparatus and method involve forming a conductor on the semiconductor substrate. Once...
7525117 Chalcogenide devices and materials having reduced germanium or telluruim content  
A chalcogenide material and memory device exhibiting fast operation over an extended range of reset state resistances. Electrical devices containing the chalcogenide materials permit rapid...
7521706 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same  
Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode...
7521705 Reproducible resistance variable insulating memory devices having a shaped bottom electrode  
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at...
7521704 Memory device using multi-layer with a graded resistance change  
A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having...
7521372 Method of fabrication of phase-change memory  
A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly...
7514706 Voltage reference circuit using programmable metallization cells  
A programmable metallization cell voltage reference is disclosed. The voltage reference can be taken from the anode to ground, from the cathode to ground, or differentially across the programmable...
7507985 Phase change memory and phase change recording medium  
A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film...
7501648 Phase change materials and associated memory devices  
A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The...
7501307 Method of fabricating semiconductor memory device  
In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the...
7498064 Laser reflowing of phase changeable memory element to close a void therein  
A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in...
7491964 Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process  
A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the...
7491962 Resistance variable memory device with nanoparticle electrode and method of fabrication  
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of...
7488968 Multilevel phase change memory  
A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the...
7488967 Structure for confining the switching current in phase memory (PCM) cells  
Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a...
7485487 Phase change memory cell with electrode  
The present invention in one embodiment provides a method of forming a memory device including providing a first dielectric layer including at least one via containing a metal stud; providing a...
7482621 Rewritable nano-surface organic electrical bistable devices  
A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is...
Matches 1 - 50 out of 257 1 2 3 4 5 6 >