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8173987 |
Integrated circuit 3D phase change memory array and manufacturing method
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements...
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8173486 |
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element...
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8173989 |
Resistive random access memory device and methods of manufacturing and operating the same
Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first...
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8174006 |
Semiconductor device and manufacturing method thereof and method for writing memory element
An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device...
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8163595 |
Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same
Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive...
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8164080 |
Diode structures and resistive random access memory devices having the same
A diode structure includes: a lower electrode and an insulating layer disposed on the lower electrode. The insulating layer includes aperture exposing a portion of the lower electrode. The diode...
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8158965 |
Heating center PCRAM structure and methods for making
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change...
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8148708 |
Resistive memory device and method of fabricating the same
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a...
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8143611 |
Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer,...
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8143089 |
Self-align planerized bottom electrode phase change memory and manufacturing method
A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom...
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8138489 |
Non-volatile semiconductor storage device and method of manufacturing the same
A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements...
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8138490 |
Variable resistance non-volatile memory cells and methods of fabricating same
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper...
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8134860 |
Shunted phase change memory
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may...
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8133757 |
Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is...
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8134139 |
Programmable metallization cell with ion buffer layer
A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
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8129706 |
Structures and methods of a bistable resistive random access memory
Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating region in the memory cell device are...
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8129707 |
Semiconductor integrated circuit device
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a...
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8129218 |
Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same
Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material...
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8124954 |
Conductive bridging random access memory device and method of manufacturing the same
A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid...
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8124950 |
Concentric phase change memory element
A memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase...
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8124955 |
Memory devices and methods of forming the same
Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of...
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8124953 |
Sensor device having a porous structure element
A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the...
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8125021 |
Non-volatile memory devices including variable resistance material
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the...
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8120003 |
Nanowire magnetic random access memory
An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization...
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8120005 |
Phase change memory devices and their methods of fabrication
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
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8120004 |
Storage node, phase change memory device and methods of operating and fabricating the same
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower...
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8105859 |
In via formed phase change memory cell with recessed pillar heater
A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact...
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8101938 |
Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
A method of fabricating a chalcogenide memory cell is described. The cross-sectional area of a chalcogenide memory element within the cell is controlled by the thickness of a bottom electrode and...
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8097903 |
Semiconductor memory device
A semiconductor memory device comprises a semiconductor substrate; a memory block formed on the semiconductor substrate and including plural stacked cell array layers of cell arrays each comprising...
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8097873 |
Phase change memory structures
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars...
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8097872 |
Modifiable gate stack memory element
An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable...
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8093575 |
Memristive device with a bi-metallic electrode
A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and...
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8088644 |
Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof
A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer...
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8089060 |
Non-volatile memory cell and fabrication method thereof
A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed...
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8084760 |
Ring-shaped electrode and manufacturing method for same
An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as...
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8080817 |
Memory cells
In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing...
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8080816 |
Silver-selenide/chalcogenide glass stack for resistance variable memory
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the...
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8076664 |
Phase change memory with layered insulator
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating...
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8076663 |
Phase change memory structures
Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with...
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8072009 |
Gas sensor having a field-effect transistor
A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer...
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8071968 |
Phase change memory device and method for manufacturing the same
A phase change memory device and a method of manufacturing the same are presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements,...
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8071970 |
Phase change memory device and fabrication method thereof
A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein...
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8067260 |
Fabricating sub-lithographic contacts
A small critical dimension element, such as a heater for an ovonic unified memory, may be formed within a pore by using successive sidewall spacers. The use of at least two successive spacers...
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8067761 |
Self-aligned memory cells and method for forming
The invention provides a memory cell based on variable resistance material memory element that includes an access device having a pillar structure that may also include a protective sidewall layer....
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8053749 |
Mirrored-gate cell for non-volatile memory
A memory comprising at least one memory cell operationally connected to a bit line, a source line and a word line. The memory cell comprises a substrate having a first source contact, a second...
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8053752 |
Four-terminal reconfigurable devices
Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric...
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8053750 |
Phase change memory device having heat sinks formed under heaters and method for manufacturing the same
A phase change memory device includes a silicon substrate having a cell region and a peripheral region. A first insulation layer is formed in the cell region and includes a plurality of holes. Cell...
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8049202 |
Phase change memory device having phase change material layer containing phase change nano particles
A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include...
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8049197 |
Self-aligned nano-cross-point phase change memory
One embodiment is a phase change memory that includes a heater element transversely contacting a storage element of phase change material. In particular, an end of the storage element contacts an...
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8048684 |
Structure and method for manipulating spin quantum state through dipole polarization switching
Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in...
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