Patents in Class 257/297

Matches 1 - 50 out of 232

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Match	Document	Document Title
1	8164128	Magnetic devices and techniques for formation thereof Techniques for forming a magnetic device are provided. In one aspect, a magnetic device includes a magnetic tunnel junction and a dielectric layer formed over at least a portion of the magnetic...
2	8159014	Localized biasing for silicon on insulator structures A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing...
3	8143664	Semiconductor device having lower leakage current between semiconductor substrate and bit lines A semiconductor device includes a bit line that is provided in a semiconductor substrate, a silicide layer that has side faces and a bottom face surrounded by the bit line and is provided within...
4	8138563	Circuit structures and methods with BEOL layers configured to block electromagnetic edge interference Back-end-of-line (BEOL) circuit structures and methods are provided for blocking externally-originating or internally-originating electromagnetic edge interference. One such BEOL circuit structure...
5	8129771	Semiconductor memory device In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the...
6	8125010	Semiconductor device A semiconductor device is proposed in which signal delay due to compensation capacitance elements in peripheral circuit element regions is eliminated. The semiconductor device includes: a first...
7	8115243	Surround gate access transistors with grown ultra-thin bodies A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to...
8	8067289	Semiconductor device and manufacturing method thereof A semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an epitaxial layer over a semiconductor substrate, a first well region over a...
9	8050066	MISFET with capacitors The present invention aims to enhance the reliability of a semiconductor device having first through fourth capacitive elements. The first through fourth capacitive elements are disposed over a...
10	8034684	Semiconductor device with improved overlay margin and method of manufacturing the same Semiconductor devices with an improved overlay margin and methods of manufacturing the same are provided. In one aspect, a method includes forming a buried bit line in a substrate; forming an...
11	8003471	Formation of a super steep retrograde channel Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises...
12	7986006	Single transistor memory cell with reduced recombination rates A semiconductor fabrication method includes forming a semiconductor structure including source/drain regions disposed on either side of a channel body wherein the source/drain regions include a...
13	7965540	Structure and method for improving storage latch susceptibility to single event upsets A digital logic storage structure includes cross coupled first and second complementary metal oxide semiconductor (CMOS) inverters formed on a semiconductor substrate, the CMOS inverters including...
14	7939872	Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made...
15	7919800	Capacitor-less memory cells and cell arrays A capacitor-less memory cell, memory device, system and process of forming the capacitor-less memory cell includes forming the memory cell in an active area of a substantially physically isolated...
16	7915684	Semiconductor device and manufacturing method thereof To provide a structure and a manufacturing method for efficiently forming a transistor to which tensile strain is preferably applied and a transistor to which compressive strain is preferably...
17	7911005	Dram having deeper source drain region than that of an logic region A semiconductor device having a DRAM region and a logic region embedded together therein, including a first transistor formed in a DRAM region, and having a first source/drain region containing...
18	7902590	Semiconductor device, method of controlling the same, and method of manufacturing the same The present invention provides a system comprising a semiconductor device, a method of controlling the semiconductor device in the system, and a method of manufacturing the semiconductor device in...
19	7898013	Integrated circuits and methods with two types of decoupling capacitors Methods and systems for optimal decoupling capacitance in a dual-voltage power-island architecture. In low-voltage areas of the chip, accumulation capacitors of two different types are used for...
20	7881135	Method for QCRIT measurement in bulk CMOS using a switched capacitor circuit A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A...
21	7851285	Non-volatile memory device and method for fabricating the same A method for fabricating a non-volatile memory device includes forming a charge tunneling layer composed of a hafnium silicate (HfSixOyNz) layer on a semiconductor substrate. A charge trapping...
22	7847365	MOSFET with isolation structure for monolithic integration and fabrication method thereof A MOSFET device with an isolation structure for a monolithic integration is provided. A P-type MOSFET includes a first N-well disposed in a P-type substrate, a first P-type region disposed in the...
23	7847849	Solid-state imaging device, driving method thereof, and camera A solid-state imaging device includes: a plurality of light-receiving elements which are arranged by rows and columns. A driving unit performs a driving, so that a signal packet and a plurality of...
24	7821110	Circuit structures and methods with BEOL layer(s) configured to block electromagnetic interference Back end of line (BEOL) circuit structures and methods are provided for blocking externally-originating or internally-originating electromagnetic interference. One such BEOL circuit structure...
25	RE41625	Semiconductor device and method of fabricating the same A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor...
26	7791169	Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Disclosed is a semiconductor structure that incorporates a capacitor for reducing the soft error rate of a device within the structure. The multi-layer semiconductor structure includes an...
27	7791122	Semiconductor memory device In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the...
28	7791123	Soft error protection structure employing a deep trench A deep trench containing a doped semiconductor fill portion having a first conductivity type doping and surrounded by a buried plate layer having a second conductivity type doping at a lower...
29	7781283	Split-gate DRAM with MuGFET, design structure, and method of manufacture A method of manufacturing a dynamic random access memory cell includes: forming a substrate having an insulating region over a conductive region; forming a fin of a fin-type field effect transistor...
30	7759715	Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle Some embodiments include memory cells that contain a dynamic random access memory (DRAM) element and a nonvolatile memory (NVM) element. The DRAM element contains two types of DRAM nanoparticles...
31	7759669	Phase change memory element with phase-change electrodes A phase change memory element with phase change electrodes, and method of making the same. Exemplary embodiments include a phase change bridge, including a bottom contact layer, a first insulating...
32	7732279	Semiconductor device with improved overlay margin and method of manufacturing the same Semiconductor devices with an improved overlay margin and methods of manufacturing the same are provided. In one aspect, a method includes forming a buried bit line in a substrate; forming an...
33	7719034	Device of active regions and gates and method of forming gate patterns using the same A semiconductor device having an improved gate process margin includes two active regions spaced apart from each other on a semiconductor substrate and respectively having bent sides with recesses...
34	7700984	Semiconductor device including memory cell It is an object of the present invention to provide a semiconductor device capable of additionally recording data at a time other than during manufacturing and preventing forgery due to rewriting...
35	7700985	Ferroelectric memory using multiferroics Ferroelectric memory using multiferroics is described. The multiferroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the...
36	7683442	Raised source/drain with super steep retrograde channel Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises...
37	7651908	Methods of fabricating image sensors A method of fabricating an image sensor which reduces fabricating costs through simultaneous formation of capacitor structures and contact structures may be provided. The method may include forming...
38	7646052	DRAM and SRAM mixedly mounted semiconductor device A semiconductor device in which a DRAM and a SRAM are mixedly mounted is provided. The DRAM and the SRAM have a stack-type structure in which a bitline is formed below a capacitive element. A cross...
39	7627840	Method for soft error modeling with double current pulse A method of modeling soft errors in a logic circuit uses two separate current sources inserted at the source and drain of a device to simulate a single event upset (SEU) caused by, e.g., an...
40	7612819	CMOS image sensor and method of operating the same A complementary metal oxide semiconductor (CMOS) image sensor and a method for operating the same are provided. The CMOS image sensor includes a pixel array unit having a matrix of pixels, wherein...
41	7612397	Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors A nonvolatile memory cell that can be mounted in a CMOS manufacturing process, and is capable of implementing high level of programming, reading and erasing ability. The memory cell is configured...
42	7592577	Self-triggering CMOS imaging array utilizing guard region structures as light detectors A camera having an exposure detector is disclosed. The camera includes an array of pixel sensors, CMOS circuitry that is separate from the array of pixel sensors, a guard region, and a current...
43	7592642	Thyristor-based semiconductor device with indium-carbon implant and method of fabrication A thyristor-based memory device may comprise two base regions of opposite type conductivity formed between a cathode-emitter region and an anode-emitter region. A junction defined between the...
44	7573084	Non-volatile semiconductor memory device and method for fabricating the same According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric...
45	7531861	Trench capacitors with insulating layer collars in undercut regions Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include...
46	7528468	Capacitor assembly with shielded connections and method for forming the same A capacitor assembly (82) is formed on a substrate (20). The capacitor assembly a first conductive plate (38) and a second conductive plate (60) formed over the substrate such that the second...
47	7514737	Semiconductor memory device In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the...
48	7509541	Detection mechanism A computer apparatus includes a first integrated circuit (IC) and a second IC. The second IC includes a soft error rate (SER) immune component and a SER component to detect radiation that could...
49	7485915	Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first...
50	7482211	Junction leakage reduction in SiGe process by implantation A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate, forming a gate dielectric over the semiconductor substrate, forming a gate...

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