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9196753 Select devices including a semiconductive stack having a semiconductive material  
Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive...
9052551 Semiconductor device and method of fabricating the same  
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with...
9048105 Semiconductor integrated circuit  
To reduce power consumption of a memory device. To reduce the area of a memory device. To reduce the number of transistors included in a memory device. The memory device includes a comparator...
9043740 Fabrication of a magnetic tunnel junction device  
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The...
9041086 Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells  
A method of forming a vertical field effect transistor includes etching an opening into semiconductor material. Sidewalls and radially outermost portions of the opening base are lined with masking...
9041085 Semiconductor device and method of forming the same  
A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in...
9041154 Contact structure and semiconductor memory device using the same  
A semiconductor memory device includes a substrate having thereon a memory array region and a periphery circuit region. A first dielectric layer covers the memory array region and the periphery...
9041153 MIM capacitor having a local interconnect metal electrode and related structure  
According to one exemplary embodiment, a method for fabricating a metal-insulator-metal (MIM) capacitor in a semiconductor die comprises forming a bottom capacitor electrode over a device layer...
9035394 Semiconductor device  
A semiconductor device includes an active region defined by a device isolation layer and including first and second sections or regions, a gate electrode extending in a first direction across the...
9029930 FinFET device with epitaxial structure  
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin...
9029928 Semiconductor device comprising a passive component of capacitors and process for fabrication  
A semiconductor device includes a wafer having a frontside and a backside. The wafer is formed from at least one integrated circuit chip having an electrical connection frontside co-planar with...
9029232 Nonvolatile memory elements  
Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive...
9029929 Semiconductor memory device and manufacturing method thereof  
A memory cell therein includes a first transistor and a capacitor and stores data corresponding to a potential held in the capacitor. The first transistor includes a pair of electrodes, an...
9029863 Semiconductor device and method for manufacturing the same  
A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in S value, of a fin-type transistor including an oxide semiconductor material is...
9019760 Multilevel memory device  
A memory device is provided, including a back gate including a first portion of electrically conductive material, a first portion of dielectric material arranged on the back gate, a semiconductor...
9012966 Capacitor using middle of line (MOL) conductive layers  
A method for fabricating a metal-insulator-metal (MIM) capacito includes depositing a first middle of line (MOL) conductive layer over a shallow trench isolation (STI) region of a semiconductor...
9012983 Semiconductor device and method of forming the same  
A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions...
9006762 Organic light-emitting device and method of manufacturing the same  
An organic light-emitting device including a substrate, an anode layer on the substrate, the anode layer including WOxNy (2.2≦x≦2.6 and 0.22≦y≦0.26), an emission structure layer on the anode...
9000504 Nonvolatile semiconductor memory device and method for manufacturing same  
According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side...
9000503 Semiconductor device  
A semiconductor device in which wirings are formed adequately and electrical couplings are made properly in an SRAM memory cell. In the SRAM memory cell of the semiconductor device, a via to be...
8999832 Organic EL element  
An organic electroluminescent (EL) element comprises: an anode; a cathode; a functional layer disposed between the anode and the cathode, and including a light-emitting layer containing an organic...
9000562 Flexible processing method for metal-insulator-metal capacitor formation  
A method for forming a metal-insulator-metal (MIM) capacitor includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric layer having a predetermined...
9000502 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Select devices including a semiconductive stack having a semiconductive material
 
Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive...
8994084 Dynamic random access memory and method for fabricating the same  
The present invention provides a dynamic random access memory (DRAM) including a plurality of transistors formed in a semiconductor substrate, wherein each of the transistors includes a vertical...
8994085 Integrated circuit including DRAM and SRAM/logic  
An integrated circuit comprising an N+ type layer, a buffer layer arranged on the N+ type layer; a P type region formed on with the buffer layer; an insulator layer overlying the N+ type layer, a...
8987799 Semiconductor device and method of forming the same  
A semiconductor device includes a semiconductor device may include, but is not limited to, a semiconductor substrate, an isolation electrode, a gate electrode, a gate insulating film, and a first...
8987797 Nonvolatile memory device and method of forming the same  
A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed...
8987798 Magnetic tunneling junction devices, memories, memory systems, and electronic devices  
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures,...
8987796 Semiconductor device having semiconductor pillar  
Disclosed herein is a device that includes: first to fourth conductive lines embedded in a semiconductor substrate; a first semiconductor pillar located between the first and second conductive...
8981445 Analog floating-gate memory with N-channel and P-channel MOS transistors  
An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is...
8981433 Compensation network for RF transistor  
A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a...
8981440 Semiconductor storage device and method for manufacturing the semiconductor storage device  
A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower...
8981446 Magnetic memory and manufacturing method thereof  
According to one embodiment, a magnetic memory including an isolation region with an insulator in a trench is disclosed. The isolation region defines active areas extending in a 1st direction and...
8981443 Semiconductor device, display device, and electronic appliance  
In case the size of the transistor is enlarged, power consumption of the transistor is increased. Thus, the present invention provides a display device capable of preventing a current from flowing...
8981444 Subresolution silicon features and methods for forming the same  
Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an...
8975678 Semiconductor device and a method of manufacturing the same  
In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed...
8975633 Molybdenum oxide top electrode for DRAM capacitors  
A metal oxide bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a desired...
8975680 Semiconductor memory device and method manufacturing semiconductor memory device  
A highly integrated gain cell-type semiconductor memory is provided. A first insulator, a read bit line, a second insulator, a third insulator, a first semiconductor film, first conductive layers,...
8975128 Electronic devices and systems, and methods for making and using the same  
Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor...
8975677 Decoupling capacitor cell, cell-based IC, cell-based IC layout system and method, and portable device  
A decoupling capacitor cell includes: a first decoupling capacitor formed by only a pMOS transistor; and a second decoupling capacitor formed by two metal layers. The decoupling capacitor cell is...
8969936 Semiconductor devices having increased contact areas between contacts and active regions and methods of fabricating the same  
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate including first and second junction regions, a word line buried in the...
8969938 Method and structure for forming on-chip high quality capacitors with ETSOI transistors  
An ETSOI transistor and a capacitor are formed respectively in a transistor and capacitor region thereof by etching through an ETSOI and thin BOX layers in a replacement gate HK/MG flow. The...
8969935 Semiconductor memory device having plural cell capacitors stacked on one another and manufacturing method thereof  
Disclosed herein is a device that includes a semiconductor substrate having a first area, a plurality of cell transistors arranged on the first area of the semiconductor substrate, and a plurality...
8969937 Semiconductor device  
A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer...
8969864 Organic light emitting device having a bulk layer comprising a first and second material  
Disclosed is an organic light emitting diode device including an anode, a cathode, an emission layer between the anode and the cathode, and a buffer layer positioned between the emission layer and...
8969923 Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterning  
Apparatus, methods, and systems are provided for a memory layer layout for a three-dimensional memory. The memory layer includes a plurality of memory array blocks; a plurality of memory lines...
8963224 Semiconductor device and method of manufacturing the same  
Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor...
8963223 Scalable integrated MIM capacitor using gate metal  
According to one embodiment, a scalable integrated MIM capacitor in a semiconductor die includes a high-k dielectric segment over a substrate and a metal segment over the high-k dielectric...
8952436 Integrated DRAM memory device  
A DRAM memory device includes at least one memory cell including a transistor having a first electrode, a second electrode and a control electrode. A capacitor is coupled to the first electrode....
8952461 Semiconductor device, designing method therefor, and manufacturing method therefor  
In a semiconductor device including active regions which are adjacent to each other with an element isolation region interposed therebetween and which are different in height from the element...