Patents in Class 257/296

Matches 51 - 100 out of 2094

Match	Document	Document Title
51	7576379	Floating body dynamic random access memory with enhanced source side capacitance A floating body dynamic random access memory (DRAM) structure has a shallow source (first source portion) and a deep source (second source portion), of which the deep source is thicker. A portion...
52	7576389	Semiconductor device and manufacture method thereof The present invention provides a trench gate Tr having a first gate electrode and a second gate electrode in the inside of a groove. The first gate electrode is provided in a groove lower part...
53	7573085	Deep trench formation in semiconductor device fabrication A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask...
54	7571651	Capacitive pressure sensor and method for fabricating the same A method for producing a capacitive pressure sensor is comprised steps of: etching front surface and depositing etching stopper on a rear surface of a silicon substrate; depositing an upper...
55	7569912	Differential variable capacitors and their applications An integrated circuit design for differential variable capacitors uses an integration method to integrate an integrated circuit having differential variable capacitors as a whole, and takes the...
56	7569877	System and method based on field-effect transistors for addressing nanometer-scale devices A system and method for selecting nanometer-scaled devices. The method includes a plurality of semiconductor wires. Two adjacent semiconductor wires of the plurality of semiconductor wires are...
57	7566619	Methods of forming integrated circuit devices having field effect transistors of different types in different device regions A method of forming an integrated circuit device includes forming a non-planar field-effect transistor in a cell array portion of a semiconductor substrate and forming a planar field-effect...
58	7566620	DRAM including a vertical surround gate transistor DRAM memory cells having a feature size of less than about 4F2 include vertical surround gate transistors that are configured to reduce any short channel effect on the reduced size memory cells. In...
59	7563730	Hafnium lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide...
60	7564085	Mechanical memory device and method of manufacturing the same A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a...
61	7564114	Semiconductor devices and methods of manufacture thereof Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
62	7564084	Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the same A dynamic random access memory (DRAM) device has dual-gate vertical channel transistors. The device is comprised of pillar-shaped active patterns including source regions contacting with a...
63	RE40842	Memory elements and methods for making same Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a...
64	7557398	Semiconductor device having a compensation capacitor in a mesh structure The compensation capacitor includes: a charge accumulating element having a diffusion layer, a dielectric layer, and a gate electrode layer, wherein the gate electrode layer, the dielectric layer,...
65	7554146	Metal-insulator-metal capacitor and method of fabricating the same In a metal-insulator-metal (MIM) capacitor and a method of fabricating the MIM capacitor, a metal-insulator-metal (MIM) capacitor comprises: a lower electrode pattern which is formed on a substrate...
66	7554147	Memory device and manufacturing method thereof A memory device in which both DRAM and phase-change memory (PCRAM) are mounted is provided with a DRAM bit line, a PCRAM bit line or a PCRAM source line formed on an conductive layer shared with...
67	7554621	Nanostructured integrated circuits with capacitors A nanostructured integrated circuit including a nanostructured element and a thin film transistor (TFT) and capacitor formed along the nanostructured element. The nanostructured element includes:...
68	7550798	CMOS image sensor and method for manufacturing the same Provided is a CMOS image sensor and method for manufacturing the same. The CMOS image sensor includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a conductive...
69	7550808	Fully siliciding regions to improve performance Structures and related methods including fully silicided regions are disclosed. In one embodiment, a structure includes a substrate; a partially silicided region located in an active region of an...
70	7550799	Semiconductor device and fabrication method of a semiconductor device In a conventional semiconductor device provided with a conventional stacked type ferroelectric capacitor, there has been caused a problem of capacitor degradation by leakage between an upper...
71	7550796	Germanium semiconductor device and method of manufacturing the same A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a...
72	7547935	Semiconductor devices including buried digit lines that are laterally offset from corresponding active-device regions A method of electrically linking contacts of a semiconductor device to their corresponding digit lines. The method includes disposing a quantity of mask material into a trench through which the...
73	7547934	Magneto-resistive effect element and magnetic memory It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive...
74	7547945	Transistor devices, transistor structures and semiconductor constructions The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region...
75	7547943	Non-volatile memory devices that include a selection transistor having a recessed channel and methods of fabricating the same A NAND-type non-volatile memory device includes a substrate and a device isolation layer disposed on the substrate to define an active region. First and second selection transistors are disposed in...
76	7548447	Semiconductor memory device and methods thereof A semiconductor memory device and methods thereof. The example semiconductor memory device may include a semiconductor substrate, a first source line and a second source line oriented in a first...
77	7547936	Semiconductor memory devices including offset active regions A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the...
78	7547937	Semiconductor memory device and method for manufacturing the same A semiconductor memory device includes a first word-line, a first non-inverted bit-line, a first inverted bit-line, a first global interconnection layer, a first memory capacitor having a first...
79	7544984	Gettering using voids formed by surface transformation One aspect of this disclosure relates to a memory device, comprising at least one gettering region, a memory array, a plurality of word lines and bit lines, and control circuitry. The gettering...
80	7544967	Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate...
81	7541632	Relaxed-pitch method of aligning active area to digit line According to one aspect of the invention, a memory device is disclosed. The memory device comprises a substantially linear active area comprising a source and at least two drains defining a first...
82	7541616	Semiconductor device A semiconductor integrated circuit device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells...
83	7541633	Phase-change RAM and method for fabricating the same A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage...
84	7542320	Semiconductor memory device A semiconductor memory device includes a plurality of word lines arranged above a semiconductor substrate to extend in a row direction; a plurality of digit lines arranged above the semiconductor...
85	7538407	Semiconductor apparatus A semiconductor apparatus ( 100 ) comprises a low potential reference circuit region ( 1 ) and a high potential reference circuit region ( 2 ), and the high potential reference circuit region ( 2 )...
86	7535025	Structure and manufacturing method for a silicon carbide semiconductor device In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide...
87	7535044	Semiconductor device, method for manufacturing a semiconductor device and mask for manufacturing a semiconductor device A semiconductor device with a substrate includes a structure. The structure has a first part and a second part. At least one section of the edge of the first part of the structure is at an...
88	7535745	Ferroelectric memory device and method of manufacturing the same A ferroelectric memory device, which includes a vertical ferroelectric capacitor having an electrode distance smaller than a minimum feature size of lithography technology being used and suitable...
89	7531861	Trench capacitors with insulating layer collars in undercut regions Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include...
90	7531863	Semiconductor device and method of fabricating the same A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor...
91	7528468	Capacitor assembly with shielded connections and method for forming the same A capacitor assembly ( 82 ) is formed on a substrate ( 20 ). The capacitor assembly a first conductive plate ( 38 ) and a second conductive plate ( 60 ) formed over the substrate such that the...
92	7528430	Electronic systems The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the...
93	7525141	Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines A memory array with data/bit lines extending generally in a first direction formed in an upper surface of a substrate and access transistors extending generally upward and aligned generally atop a...
94	7525140	Integrated thin film capacitors with adhesion holes for the improvement of adhesion strength In an embodiment, a substrate includes a thin film capacitor embedded within. In an embodiment, a plurality of adhesion holes extend through the thin film capacitor. These adhesion holes may...
95	7521330	Methods for forming capacitor structures A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the...
96	7521746	Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same A ferroelectric random access memory (FRAM) includes a semiconductor substrate and an interlayer insulating layer on the substrate. A diffusion preventive layer is on the interlayer insulating...
97	7521744	Resin-encapsulated semiconductor apparatus and process for its fabrication The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member...
98	7518212	Graded Ge_xSe_100-xconcentration in PCRAM The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also...
99	7518246	Atomic layer deposition of CeO₂/Al₂O₃films as gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of cerium oxide and aluminum oxide acting as a single dielectric layer with a ratio of approximately two to...
100	7518174	Memory cell and method for forming the same A semiconductor memory cell structure having 4F 2 dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the...

Matches 51 - 100 out of 2094

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