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7402879 Layered magnetic structures having improved surface planarity for bit material deposition  
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and...
7402858 Semiconductor memory device and method of manufacturing the same  
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first...
7402857 Flip FERAM cell and method to form same  
A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present...
7402529 Method of applying cladding material on conductive lines of MRAM devices  
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed...
7400006 Conductive memory device with conductive oxide electrodes  
A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are...
7400005 Semiconductor memory device having ferroelectric capacitors with hydrogen barriers  
A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a...
7397077 Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data  
An aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a thermally conductive material coupled to at least one of the...
7394123 Magnetic random access memory array with thin conduction electrical read and write lines  
An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic...
7394122 Magnetic random access memory array with thin conduction electrical read and write lines  
An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness...
7394090 Non-volatile memory and the fabrication method  
A non-volatile memory comprising: a first substrate ( 100 ) and a second substrate ( 110 ), the first substrate ( 100 ) having a plurality of switching elements ( 4 ) arranged in matrix, and a...
7390679 Method for manufacturing ferroelectric memory device  
A method for manufacturing a ferroelectric capacitor, includes the steps of: forming a ferroelectric capacitor layer having a lower electrode layer, a ferroelectric layer and an upper electrode...
7385239 Semiconductor device and manufacturing method therefor  
A ferroelectric capacitor having a bottom electrode ( 9 a ), a ferroelectric film ( 10 a ) and a top electrode ( 11 a ) is formed above a semiconductor substrate ( 1 ). The ferroelectric film ( 10...
7383376 Apparatus and methods for storing data in a magnetic random access memory (MRAM)  
An apparatus and methods store data in a magnetic random access memory (MRAM) in a fast and efficient manner. Embodiments advantageously decrease the number of clock cycles required to store data...
7382013 Dielectric thin film, dielectric thin film device, and method of production thereof  
To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film...
7379322 Amorphous high-k thin film and manufacturing method thereof  
An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous...
7378702 Vertical memory device structures  
Vertically oriented semiconductor memory cells are added to a separately fabricated substrate that includes electrical devices and/or interconnect. The plurality of vertically oriented...
7378700 Self-aligned V0-contact for cell size reduction  
An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The...
7378699 Magnetic head having a magnetoresistive element and highly polarized spin injection layer  
A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer. The barrier layer is inserted between the giant magnetoresistive element...
7378698 Magnetic tunnel junction and memory device including the same  
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one...
7375388 Device having improved surface planarity prior to MRAM bit material deposition  
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and...
7374953 Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same  
A ferroelectric random access memory (FRAM) includes a semiconductor substrate and an interlayer insulating layer on the substrate. A diffusion preventive layer is on the interlayer insulating...
7374952 Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof  
Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof. At least the top magnetic material layer of a magnetic stack is patterned using a hard mask, and a conformal...
7372118 Magnetic random access memory and method of manufacturing the same  
A magnetic random access memory includes, a lower electrode, a magnetoresistive element which is arranged above the lower electrode and has side surfaces, and a protective film which covers the...
7372090 Magnetic random access memory device and method of forming the same  
Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a...
7371473 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor  
A ferroelectric film is formed by an oxide that is described by a general formula AB 1-x Nb x O 3 . An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and...
7368774 Capacitor and its manufacturing method, ferroelectric memory device, actuator, and liquid jetting head  
A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate...
7367111 Method for producing a spin valve transistor with stabilization  
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a...
7365382 Semiconductor memory having charge trapping memory cells and fabrication method thereof  
A semiconductor memory having charge trapping memory cells, where the direction of current flow of each channel region of the memory transistors runs transversely with respect to the relevant word...
7361949 Method of making a haze free, lead rich PZT film  
An embodiment of the invention is a method of fabricating a haze free, phase pure, PZT layer, 3 , where a lead rich PZT film, 102 , is formed over a phase pure stoichiometric PZT film, 101.
7358553 System and method for reducing shorting in memory cells  
An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting...
7358100 Bottom conductor for integrated MRAM  
A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center...
7352021 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier  
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling...
7351593 Method of improving on-chip power inductor performance in DC-DC regulators  
A method is provided for forming the ferromagnetic core of an on-chip inductor structure. In accordance with the method, a static, permanent magnet is placed in proximity to a semiconductor wafer...
7349195 Thin film capacitor and method for manufacturing the same  
The present invention provides the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in...
7348619 Ferroelectric memory arrangement  
A ferroelectric memory arrangement having memory cells, in each of which a vertical ferroelectric storage capacitor, which includes vertical electrodes and a ferroelectric dielectric between the...
7348617 Semiconductor device  
A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device...
7348616 Ferroelectric integrated circuit devices having an oxygen penetration path  
Ferroelectric integrated circuit devices, such as memory devices, are formed on an integrated circuit substrate. Ferroelectric capacitor(s) are on the integrated circuit substrate and a further...
7345367 Magnetic memory device and producing method thereof  
A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word...
7345331 Ferroelectric capacitor circuit for sensing hydrogen gas  
A ferroelectric capacitor circuit for sensing hydrogen gas having a closed integrated circuit package, a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric...
7344896 Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof  
Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run...
7341875 Semiconductor memory device with a capacitor formed therein and a method for forming the same  
To integrate a capacitor device ( 40 ) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device ( 43 ) and an upper electrode...
7339819 Spin based memory coupled to CMOS amplifier  
A nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an...
7339221 Semiconductor device having a self-aligned contact structure  
A semiconductor device includes a silicon substrate having an active region, a memory transistor having a pair of source/drain regions and a gate electrode layer, a hard mask layer on the gate...
7339219 Capacitance device including a perovskite film having (001) orientation  
A capacitance device including a substrate having a (111) orientation, an epitaxial film formed on the substrate and having a perovskite structure and a (001) orientation, and an electrode formed...
7339218 Semiconductor memory device and method of manufacturing the same  
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first...
7338907 Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications  
A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture...
7335961 Magnetic random access memory array with coupled soft adjacent magnetic layer  
An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity...
7335960 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture  
A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free...
7335598 Chemical-mechanical polishing method  
A chemical-mechanical polishing process for forming a metallic interconnect includes the steps of providing a semiconductor substrate having a first metallic line thereon, and then forming a...
7332760 Ferroelectric material for ferroelectric devices  
A ferroelectric material includes a superlattice structure having lead zirconate layers and barium zirconate layers such that the superlattice structure has remanent polarization exhibiting a...
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