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7619268 |
Fast remanent resistive ferroelectric memory
Memory element consisting of an electrode ( 2 ), a ferroelectric layer ( 3 ) adjoining the latter, a layer ( 4 ) made from non-ferroelectric material adjoining the ferroelectric layer ( 3 ) and an...
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7619247 |
Structure for amorphous carbon based non-volatile memory
A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The...
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7615814 |
Ferroelectric device having a contact for taking the potential of a metal film and a plurality of capacitors positioned periodically
A semiconductor memory device includes: a first conductive layer; a second conductive layer; a first insulating film; a first plug; a second plug; a second insulating film having a first opening...
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7615771 |
Memory array having memory cells formed from metallic material
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality...
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7611913 |
Ferroelectric rare-earth manganese-titanium oxides
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
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7608467 |
Switchable resistive perovskite microelectronic device with multi-layer thin film structure
A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises...
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7605437 |
Spin-transfer MRAM structure and methods
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet...
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7605417 |
Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the...
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7605007 |
Semiconductor device and method of manufacturing the same
An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M 1 O x2 , a second conductive oxidation layer made of an oxide expressed by a...
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7602636 |
Spin MOSFET
A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first...
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7602000 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy...
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7598556 |
Ferroelectric memory device
A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower...
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7598555 |
MgO tunnel barriers and method of formation
MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg...
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7596018 |
Spin memory with write pulse
An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic...
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7595538 |
Semiconductor device
A P-type MOSFET 120 includes a semiconductor substrate (N-well 102 b ); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant film 108 which...
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7595520 |
Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
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7595203 |
Ferroelectric memory device with a conductive polymer layer and a method of formation
A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a...
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7592659 |
Field effect transistor and an operation method of the field effect transistor
A field effect transistor includes a silicon substrate, a source electrode and a drain electrode which are formed in upper portions of the silicon substrate, and an insulator film, a PCMO film, and...
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7592657 |
Semiconductor device and method of manufacturing the same
According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11 , a crystalline conductive film 21 , a first...
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7592656 |
Semiconductor device and fabricating method of the same
An Al 2 O 3 film with a thickness greater than that of a wiring is formed as a protective film, and then the Al 2 O 3 film is polished by CMP until a conductive barrier film is exposed. Namely,...
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7586774 |
Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same
A stacked ferroelectric memory device has selection transistors including a first gate structure, a first impurity region, a second impurity region, a first insulating interlayer covering the...
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7582923 |
Magnetic memory and manufacturing method for the same
The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention...
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7579641 |
Ferroelectric memory device
A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field...
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7579640 |
Hybrid memory device
A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic...
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7579614 |
Magnetic random access memory
A magnetic random access memory includes a semiconductor substrate having a projection projecting from a substrate surface, first and second gate electrodes and a first source diffusion layer...
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7579227 |
Semiconductor device and method for fabricating the same
A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating...
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7576378 |
Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more...
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7576377 |
Ferroelectric memory device and manufacturing method thereof
A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen...
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7575940 |
Dielectric film, method of manufacturing the same, and semiconductor capacitor having the dielectric film
Provided are a dielectric film, a method of manufacturing the same, and a semiconductor capacitor having the dielectric film. The semiconductor capacitor includes a lower electrode, a ferroelectric...
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7573084 |
Non-volatile semiconductor memory device and method for fabricating the same
According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric...
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7573083 |
Transistor type ferroelectric memory and method of manufacturing the same
A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source...
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7572645 |
Magnetic tunnel junction structure and method
Methods and apparatus are provided for magnetic tunnel junctions (MTJs) ( 10, 50 ) employing synthetic antiferromagnet (SAF) free layers ( 14, 14′ ). The MTJ ( 10, 50 ) comprises a pinned...
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7570336 |
Display device with piezoelectric material and method for fabricating the same
The present invention discloses a display device having a gate line and a data line crossing each other on a substrate to define a pixel region, a thin film transistor at each crossing of the gate...
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7569401 |
Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed...
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7563654 |
Method of manufacturing semiconductor device for formation of pin transistor
A method for manufacturing a semiconductor device is disclosed. The method includes the steps of defining a trench into a field region of a semiconductor substrate having an active region and the...
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7560760 |
Ferroelectric memory devices having expanded plate lines
A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of row and columns in respective row and...
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RE40842 |
Memory elements and methods for making same
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a...
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7554145 |
Magnetic memory cells and manufacturing methods
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced...
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7554144 |
Memory device and manufacturing method
A memory device includes first and second electrodes separated by an insulating member comprising upwardly and inwardly tapering surfaces connected by a surface segment. A bridge, comprising memory...
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7550799 |
Semiconductor device and fabrication method of a semiconductor device
In a conventional semiconductor device provided with a conventional stacked type ferroelectric capacitor, there has been caused a problem of capacitor degradation by leakage between an upper...
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7547934 |
Magneto-resistive effect element and magnetic memory
It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive...
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7547933 |
Semiconductor device and manufacturing method of a semiconductor device
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular...
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7547629 |
Ferroelectric capacitor and its manufacturing method and ferroelectric memory device
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by...
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7545013 |
Reconfigurable logic circuit using a transistor having spin-dependent transfer characteristics
A nonvolatilely reconfigurable logical circuit is built. It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of...
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7544983 |
MTJ read head with sidewall spacers
Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this...
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7544967 |
Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate...
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7544240 |
Composition for ferroelectric thin film formation, ferroelectric thin film and liquid-jet head
A composition for ferroelectric thin film formation, comprising at least a colloidal solution containing metals serving as materials constituting a ferroelectric thin film, the colloidal solution...
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7542335 |
Magnetic storage device using ferromagnetic tunnel junction element
It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data. In the present invention, therefore, in a...
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7535745 |
Ferroelectric memory device and method of manufacturing the same
A ferroelectric memory device, which includes a vertical ferroelectric capacitor having an electrode distance smaller than a minimum feature size of lithography technology being used and suitable...
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7531862 |
Semiconductor device having ferroelectric substance capacitor
The invention provides a semiconductor device having a ferroelectric substance capacitor small in the occupying area and large in capacitance and a semiconductor device having a ferroelectric...
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