Matches 651 - 700 out of 1589 < 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 >
Match Document Document Title
6818935 Semiconductor device and method for fabricating the same  
A semiconductor device, capable of precluding the deterioration of flatness and electrical properties due to the non-planarized topology and enhancing oxidative endurance and the process margins,...
6818523 Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layer  
A method for forming a semiconductor storage device includes steps of forming a memory cell transistor, forming a first plug connected to the memory cell transistor, forming a second plug of a...
6818465 Nitride semiconductor element and production method for nitride semiconductor element  
Nitride semiconductor devices and methods of fabricating same are provided. The nitride semiconductor device includes a crystal layer grown into a three-dimensional shape having a side surface...
6815785 Thin film magnetic memory device and manufacturing method therefor  
A thin film magnetic memory device includes: a TMR element, provided on a main surface of a silicon substrate, operating as a memory element; a buffer layer having a first surface bringing into...
6815745 Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device  
When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers ( 11, 12 ) and a barrier layer ( 13 ) is constructed, after one...
6815744 Microelectronic device for storing information with switchable ohmic resistance  
A microelectronic device is designed such that it includes a region between electrodes having a switchable ohmic resistance wherein the region is made of a substance comprising components A x , B y...
6815248 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing  
A resistive memory device ( 110 ) and method of manufacturing thereof comprising a cap layer ( 140 ) and hard mask layer ( 142 ) disposed over magnetic stacks ( 114 ), wherein either the cap layer...
6815224 Low-temperature processing of a ferroelectric strontium bismuth tantalate layer, and fabrication of ferroelectric components using the layer  
In a method for producing ferroelectric strontium bismuth tantalate having the composition Sr x Bi y Ta 2 O 9 (SBT) or Sr x Bi y (Ta, Nb) 2 O 9 (SBTN), the element strontium, which is normally...
6812538 MRAM cells having magnetic write lines with a stable magnetic state at the end regions  
A method and system for providing and using a magnetic memory are disclosed. The magnetic memory includes a plurality of magnetic memory cells, a plurality of magnetic write lines and a plurality...
6812537 Magnetic memory and method of operation thereof  
A magnetic memory according to the present invention comprises: a single magnetic memory cell having at least first to third magnetic layers, a first tunnel insulating layer between the first and...
6812515 Polysilicon layers structure and method of forming same  
A non-volatile memory cell includes a first insulating layer over a substrate region, and a floating gate. The floating gate includes a first polysilicon layer over the first insulating layer and a...
6812511 Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof  
A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements...
6812510 Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory  
A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×10 18 cm −3 or less, and the pair of...
6812509 Organic ferroelectric memory cells  
This invention proposes to make memory using organic materials. The basic structure of the memory cell is a field effect organic transistor using a ferroelectric thin film polymer as gate...
6809388 Magnetic sensor based on efficient spin injection into semiconductors  
A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection...
6809361 Magnetic memory unit and magnetic memory array  
A magnetic memory unit having a first magnetizable electrode, a second magnetizable electrode, and at least one nanotube arranged between the electrodes in a longitudinal direction and coupled to...
6809360 Semiconductor device and method of manufacturing the same  
There are contained first capacitors each having a first lower electrode, a first ferroelectric film, and a first upper electrode, which are formed sequentially in a first region of an insulating...
6806553 Tunable thin film capacitor  
It is an object of the invention to provide a variable capacitor constituted such that, even when an external control voltage is applied, a stable dielectric constant of the dielectric layer can be...
6806524 Thin film magnetic memory device  
A thin film magnetic memory device includes: TMR elements provided at a predetermined distance away from each other on a main surface of a silicon substrate so as to operate as memory elements; a...
6806523 Magnetoresistive memory devices  
The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over...
6803620 Non-volatile semiconductor memory device and a method of producing the same  
The present invention prevents production of residue which causes short-circuit between word lines. A memory cell comprises a channel formation region CH, charge storage films CSF each comprised of...
6803619 Semiconductor memory device  
A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes...
6803618 MRAM configuration having selection transistors with a large channel width  
The invention relates to an MRAM configuration that includes a selection transistor connected to several MTJ memory cells. The selection transistor has an increased channel width.
6803617 Capacitor and method for fabricating the same  
The capacitor comprises an lower electrode 22 , a dielectric film 30 formed on the lower electrode 22 , a floating electrode 20 formed on the dielectric film 30 , a dielectric film 50 ...
6803616 Magnetic memory element having controlled nucleation site in data layer  
A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. The controlled nucleation sites improve the switching distribution of the magnetic memory...
6803615 Magnetic tunnel junction MRAM with improved stability  
An MRAM cell includes a pinned layer, a free layer, and a bit line with a magnetic sheath. The magnetic sheath allows a magnetic field to circulate in a loop around the bit line. The looping...
6801451 Magnetic memory devices having multiple bits per memory cell  
A memory cell of a data storage device includes serially-connected first and second magnetoresistive devices. The first magnetoresistive device has first and second resistance states. The second...
6800937 RuSixOy-containing adhesion layers and process for fabricating the same  
Integrated circuit structures having a substrate assembly that includes at least one active device and a silicon-containing region are disclosed. The integrated circuit structure includes an...
6800890 Memory architecture with series grouped by cells  
An IC with a memory array having a series architecture is disclosed. A memory cell of a series group comprises a transistor coupled to a capacitor in parallel. The capacitor includes first and...
6800889 Semiconductor device and fabrication method thereof  
A semiconductor device includes a capacitor having a lower electrode ( 102 ), a high-dielectric-constant or ferroelectric thin film ( 103 ), and an upper electrode ( 104 ) which are subsequently...
6800521 Process for the formation of RuSixOy-containing barrier layers for high-k dielectrics  
A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The...
6798004 Magnetoresistive random access memory devices and methods for fabricating the same  
Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A...
6798003 Reliable adhesion layer interface structure for polymer memory electrode and method of making same  
A polymer memory device includes two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The...
6798002 Dual-purpose anti-reflective coating and spacer for flash memory and other dual gate technologies and method of forming  
A dual gate semiconductor device, such as a flash memory semiconductor device, whose plurality of dual gate sidewall spacer structure is formed by a first and second anti-reflection fabrication...
6794729 Stacked capacitor and method of forming the same as well as semiconductor device using the same and circuit board using the same  
A stacked capacitor which comprises: a dielectric layer; a two-dimensional array of terminal electrodes on at least one of first and second surfaces of the dielectric layer; first internal...
6794705 Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials  
A multi-layer electrode ( 246 ) and method of fabrication thereof in which a conductive region ( 244 ) is separated from a barrier layer ( 222 ) by a first conductive liner ( 240 ) and a second...
6794697 Asymmetric patterned magnetic memory  
This invention provides an asymmetrically patterned magnetic memory storage device. In a particular embodiment at least one magnetic memory cell is provided. Each magnetic memory cell provides at...
6794696 Magnetic memory device and method of manufacturing the same  
A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic...
6794695 Magneto resistive storage device having a magnetic field sink layer  
An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the...
6794694 Inter-wiring-layer capacitors  
An integrated circuit includes a semiconductor substrate with semiconductor devices formed therein and thereon, a first wiring layer located over the substrate, a second wiring layer located on the...
6794199 Ferroelectric memory and method for fabricating the same  
A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among...
6791870 Magnetoresistive memory devices and assemblies; and methods of storing and retrieving information  
The invention includes a magnetoresistive memory device having a memory bit stack. The stack includes a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and...
6791866 Magnetoresistive film, method of manufacturing magnetoresistive film, and memory using magnetoresistive film  
A magnetoresistive film having a relatively large magnetoresistive effect includes a ferrimagnetic layer, a magnetic layer, and a tunneling barrier layer disposed between the ferrimagnetic layer...
6791863 Ferroelectric memory device and method of manufacturing the same  
A ferroelectric memory device includes a memory cell array and a peripheral circuit section. The memory cell array, in which memory cells are arranged in a matrix, includes first signal electrodes,...
6790676 Method for producing a ferroelectric layer  
A method for producing a ferroelectric layer includes preparing a substrate, applying a layer of material, which will be subsequently converted into the ferroelectric layer, and changing the...
6787864 Mosfets incorporating nickel germanosilicided gate and methods for their formation  
A MOSFET gate or a MOSFET source or drain region comprises silicon germanium or polycrystalline silicon germanium. Silicidation with nickel is performed to form a nickel germanosilicide that...
6787832 Semiconductor memory cell and semiconductor memory device  
A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an...
6787831 Barrier stack with improved barrier properties  
An barrier stack for inhibiting diffusion of atoms or molecules, such as O 2 is disclosed. The barrier slack includes first and second barrier layers formed from, for example, Ir, Ru, Pd, Rh, or...
6787830 Semiconductor device and method for fabricating the same  
A gate electrode and a gate insulating film are formed for each of PMOSFET, NMOSFET and ferroelectric FET. Source/drain regions are defined for the NMOSFET and ferroelectric FET and for the PMOSFET...
6787414 Capacitor for semiconductor memory device and method of manufacturing the same  
Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer...
Matches 651 - 700 out of 1589 < 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 >