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Match Document Document Title
8183556 Extreme high mobility CMOS logic  
A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
8134216 Nuclear batteries  
We introduce a new technology for Manufacturable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require...
8120016 Imaging device  
A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state...
8105928 Graphene based switching device having a tunable bandgap  
A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an...
8106383 Self-aligned graphene transistor  
A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating...
7999251 Nanowire MOSFET with doped epitaxial contacts for source and drain  
A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET...
7999252 Image sensor and method for fabricating the same  
An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under...
7927978 Method of making devices including graphene layers epitaxially grown on single crystal substrates  
An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially...
7851785 Magnetic tunnel transistor with thin read gap for head applications  
A magnetic tunnel transistor (MTT) for a disk drive read head includes a barrier of TiO disposed between a ferromagnetic collector and a ferromagnetic base for preferentially selecting only...
7737365 Wired circuit board  
A wired circuit board has a metal supporting board, an insulating layer formed on the metal supporting board, a conductive pattern formed on the insulating layer and having a pair of wires arranged...
7728324 Field effect transistor, integrated circuit element, and method for manufacturing the same  
A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel...
7723728 Fan-out wire structure for a display panel  
A fan-out wire structure is used to connect a driver and a display region of a display panel and has a plurality of first single-layer wires and at least one second single-layer wire. The first...
7629604 Nano-based device and method  
A nano-based device includes a support structure providing a support surface, a second structure providing a second surface angled with respect to the support surface, and at least one nano-emitter...
7576353 Ballistic deflection transistor and logic circuits based on same  
A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic...
7504654 Structure for logical “OR” using ballistics transistor technology  
A ballistic logic gate is disclosed. The ballistic logic gate may include an etched silicon substrate with a pair of etched silicon triangular baffles defining input channels. An electron may...
7432522 Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them  
Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting...
7315041 Switching devices based on half-metals  
One embodiment of the present invention provides a switching device that can vary a spin-polarized current based on an input signal. The switching device comprises a first conducting region, a...
7173275 Thin-film transistors based on tunneling structures and applications  
A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the...
7151054 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks  
In one aspect, the invention includes a semiconductor processing method comprising exposing silicon, nitrogen and oxygen in gaseous form to a high density plasma during deposition of a silicon,...
7122735 Quantum well energizing method and apparatus  
A method and apparatus that converts energy provided by a chemical reaction into energy for charging a quantum well device. The disclosed apparatus comprises a catalyst layer that catalyzes a...
6952055 Intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same  
The invention is a method of fabricating electrically passive components or optical elements on top or underneath of an integrated circuit by using a porous substrate that is locally filled with...
6870179 Increasing stress-enhanced drive current in a MOS transistor  
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is...
6791338 Gated nanoscale switch having channel of molecular wires  
A gated nanoscale switch operates as a resonant tunneling device. A conductive channel is formed of a pair of conductive molecular wires and a conductive nanoparticle. Each molecular wire is bound,...
6627914 Millimeter wave and far-infrared detector  
An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response. The detector includes an MR/FIR light introducing section (1) for...
6566694 Heterojunction bipolar transferred electron tetrode  
A heterojunction bipolar transferred electron tetrode has an anode region providing a first terminal, an active region in which Gunn-Hilsum oscillations are generated, a base region providing a...
6521479 Repackaging semiconductor IC devices for failure analysis  
The present invention provides a system and method for preparing semiconductor integrated circuits (“ICs”), particularly ball grid arrays (“BGAs”), quad flat packs (“QFPs”) and dual in line packag...
6420727 Light-emitting semiconductor device with quantum-wave interference layers  
A light-emitting device comprising an emission layer which has a single layer structure is formed. The emission layer is sandwiched by a first quantum-wave interference layer constituted by plural...
6410947 Semiconductor device and process of production of same  
A semiconductor device operable with a single positive power source, enabling an increase in efficiency, and improved in high-frequency characteristics by lowering the resistivity of a gate...
6303940 Charge injection transistor using high-k dielectric barrier layer  
The present invention relates to a heterojunction structure based upon the oxide/high-k dielectric barrier. In exemplary embodiment, a silicon layer has a silicon dioxide layer thereon, and a...
6214632 Electro-optical device with integral optical element  
Electro-optical device characterized by having been formed into an individual unit with an integral optical element, and method to form the device. An optical element, for instance a length of...
6185961 Nanopost arrays and process for making same  
A nanopost glass array contains up to 1012 /cm2 of magnetizable nanoposts having diameter of 10-1000 nm that are straight and parallel to each other and are typically of a uniform diameter relative...
6153907 IC layout structure for MOSFET having narrow and short channel  
A specific IC layout structure for the MOSFET having a narrow and short channel, especially when the width and the length of the channel are both as small as 1 micron or less, is disclosed. In the...
6091077 MIS SOI semiconductor device with RTD and/or HET  
The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot...
5907159 Hot electron device and a resonant tunneling hot electron device  
The present invention is to solve the problems caused in various methods used to improve the performance of the device by improvement of conventional base layer. The present invention discloses a...
5894135 Superconductor device  
A superconductor device comprises a Schottky barrier region SB for selectively passing injected carriers and a collector barrier region LB for selectively blocking leakage carriers. The Schottky...
5773842 Resonant-tunnelling hot electron transistor  
A resonant-tunnelling hot transistor includes buffer layers undoped with impurities on either side of a collector or an emitter potential barrier having a quantum well structure. When a voltage is...
5744817 Hot carrier transistors and their manufacture  
A hot carrier transistor can be formed with semiconductor thin-film technology, for example hydrogenated amorphous silicon (a-Si:H) technology as used for large-area electronics devices. The...
5742071 Wiringless logical operation circuits  
A logical operation circuit in which wiring as generally performed between transistors is made unnecessary to improve reliability, stability and integration degree of a logical circuit using a...
5712491 Lateral theta device  
A lateral THETA device formed of a sandwich of first and second layers of semiconductor material forming a heterojunction therebetween and a two dimensional carrier gas in the second layer. First...
5640022 Quantum effect device  
A quantum effect device which operates in a mesoscopic region and eliminates the need for making monochromatic electron waves for the operation and moreover can operate in a high temperature...
5548140 High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt  
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the...
5543749 Resonant tunneling transistor  
A heterojunction semiconductor device includes an unipolar transistor having, a collector layer, a base layer, a collector side barrier layer provided between the collector layer and base layer, an...
5459334 Negative absolute conductance device and method  
A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for...
5448085 Limited current density field effect transistor with buried source and drain  
A buried source and drain microwave field effect transistor which provides reduced current density and reduced electric field intensity near the transistor's surface region is disclosed. Operating...
5442192 Heterostructure electron emitter utilizing a quantum well  
A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are...
5442194 Room-temperature tunneling hot-electron transistor  
A hot-electron transistor (10) is formed on substrate (12) having an outer surface. The present transistor includes subcollector layer (14) comprising Indium Gallium Arsenide formed outwardly from...
5416339 Semiconductor device having electrode for collecting electric charge in channel region  
A semiconductor device for switching comprises a semiconductor substrate (10), three conductive regions (14, 16, 20) for providing a path for electrons to or from desired locations of the...
5367274 Quantum wave guiding electronic switch  
A quantum wave guiding electronic switch includes a substrate which carries electron waveguides disposed in a fork-like configuration. Each of these electron waveguides is connected to a respective...
5352904 Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency  
A multiple quantum well (MQW) radiation sensor eliminates tunneling current from the photoactivated current that provides an indication of incident radiation, and yet preserves a substantial bias...
5350931 Double barrier resonant propagation filter  
One or more double barrier resonant tunneling filters are provided for electron propagation mode control in nanostructure quantum wire electron waveguides and in quantum interference devices in the...
Matches 1 - 50 out of 85 1 2 >