Patents in Class 257/288

Matches 1 - 50 out of 827

Match	Document	Document Title
1	7615818	Semiconductor device and method of manufacturing the same The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate,...
2	7615813	Semiconductor device using fuse/anti-fuse system A first concave portion for the element isolation, a second concave portion for an aligning mark, and a third concave portion for an anti-fuse portion are formed simultaneously within a silicon...
3	7615812	Field effect semiconductor diodes and processing techniques Field effect semiconductor diodes and improved processing techniques for forming the field effect semiconductor diodes having semiconductor layers forming a source, a body and a drain of a field...
4	7615779	Forming electrodes to small electronic devices having self-assembled organic layers In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top...
5	7612431	Trench polysilicon diode Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second...
6	7612412	Semiconductor device and boost circuit A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect...
7	7611973	Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same In methods of selectively forming an epitaxial semiconductor layer on a single crystalline semiconductor and semiconductor devices fabricated using the same, a single crystalline epitaxial...
8	7608912	Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in...
9	7608869	Thin film transistor and method of fabricating the same A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer;...
10	7608868	Semiconductor device and method for manufacturing the same The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried...
11	7608867	Vertical IMOS transistor having a PIN diode formed within A vertical IMOS-type transistor including: a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion,...
12	7608865	Club extension to a T-gate high electron mobility transistor A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to...
13	7605447	Highly manufacturable SRAM cells in substrates with hybrid crystal orientation The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down...
14	7605414	MOS transistors having low-resistance salicide gates and a self-aligned contact between them A method for forming a self-aligned contact between two MOS transistors is described. The method supports the use of low-resistivity suicides for the formation of contacts in nanometer applications...
15	7602638	Semiconductor memory device A semiconductor memory device is provided which can achieve high performance, such as an improvement in reliability, an improvement in yield, and the like, without increasing the chip area. The...
16	7601998	Semiconductor memory device having metallization comprising select lines, bit lines and word lines A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the...
17	7598551	High voltage device The invention is directed to a method for manufacturing a high voltage device. The method includes steps of providing a substrate and then forming a first doped region having a first conductive...
18	7598550	MOS transistor and manufacturing method thereof There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer,...
19	7598549	Semiconductor device having a silicon layer in a gate electrode A CMOS device includes a silicon substrate, a gate insulating film, and a gate electrode including a silicon layer doped with boron and phosphorous, a tungsten nitride layer and a tungsten layer. A...
20	7598544	Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube...
21	7595559	Integrated circuit chip having pass-through vias therein that extend between multiple integrated circuits on the chip Packaged integrated circuit devices include a package substrate and a multi-chip stack of integrated circuit devices on the package substrate. The multi-chip stack includes at least one chip-select...
22	7595522	Nonvolatile semiconductor memory According to the invention, there is provided a nonvolatile semiconductor memory having: a floating gate electrode formed on a gate insulating film on an element region isolated by an...
23	7595244	Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics Fabrication of two differently configured like-polarity insulated-gate field-effect transistors ( 40 or 42 and 240 or 242 ) entails introducing multiple body-material semiconductor dopants of...
24	7586169	Image sensor and method for manufacturing the same An image sensor that can include a photodiode formed on one side of a substrate to receive light and then generate signal charges based on the light; and a transistor converting the signal charges...
25	7586160	Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit A semiconductor integrated circuit is provided in which a CMOS transistor is formed on a first conductivity type semiconductor film provided on a first conductivity type supporting substrate...
26	7586151	Insulated gate semiconductor device The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage....
27	7586130	Vertical field effect transistor using linear structure as a channel region and method for fabricating the same A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region; a lower electrode, functioning as one of source and drain regions;...
28	7586116	Semiconductor device having a semiconductor-on-insulator configuration and a superlattice A semiconductor device may include a substrate, an insulating layer adjacent the substrate, and a semiconductor layer adjacent a face of the insulating layer opposite the substrate. The device may...
29	7585735	Asymmetric spacers and asymmetric source/drain extension layers A method of forming a semiconductor device is provided in which a substrate ( 102 ) is provided which has a gate dielectric layer ( 106 ) disposed thereon, and a gate electrode ( 116 ) having first...
30	7582931	Recessed gate electrodes having covered layer interfaces and methods of forming the same A gate electrode of a transistor can include an interface between a polysilicon conformal layer and a tungsten layer thereon in a trench in a substrate and a capping layer extending across the...
31	7582893	Semiconductor memory device comprising one or more injecting bilayer electrodes The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays...
32	7582526	Method for manufacturing semiconductor device A method for manufacturing a plurality of memory devices and a plurality of high voltage devices on a substrate are provided. The substrate has a memory region and a high voltage region. The method...
33	7579660	Semiconductor device and manufacturing method thereof A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate...
34	7579636	MIS-type field-effect transistor A strained Si layer 2 is epitaxially grown on a base SiGe layer 1 , and a gate insulating film 3 a and a gate electrode 4 a are formed. An impurity is then ion-implanted (FIG. 2 A) into the...
35	7576399	Semiconductor device and method of manufacture thereof A dielectric material layer is formed over a workpiece, a metal layer is formed over the dielectric material layer, and a semiconductive material layer is formed over the metal layer. The workpiece...
36	7573062	Thin-film transistor, thin-film transistor sheet and their manufacturing method Disclosed are a process of manufacturing a thin-film transistor sheet and a thin-film transistor sheet manufactured by the process, the process comprising the steps of providing a gate busline on a...
37	7569876	DRAM arrays, vertical transistor structures, and methods of forming transistor structures and DRAM arrays The invention includes a method of forming a semiconductor construction. Dopant is implanted into the upper surface of a monocrystalline silicon substrate. The substrate is etched to form a...
38	7569869	Transistor having tensile strained channel and system including same A transistor structure and a system including the transistor structure. The transistor structure comprises: a substrate including a first layer comprising a first crystalline material; a tensile...
39	7566924	Semiconductor device with gate spacer of positive slope and fabrication method thereof Embodiments of the invention provide a semiconductor device and a fabrication method for a semiconductor device that includes the processes of forming multiple gates on a silicon substrate, forming...
40	7566655	Integration process for fabricating stressed transistor structure A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP...
41	7564120	Electrical passivation of silicon-containing surfaces using organic layers Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical...
42	7564081	finFET structure with multiply stressed gate electrode A semiconductor structure and its method of fabrication include a semiconductor fin located over a substrate. A gate electrode is located over the semiconductor fin. The gate electrode has a first...
43	7564080	Method for producing a laser diode component, housing for a laser diode component, and laser diode component itself A method for producing a laser diode component having an electrically insulating housing basic body and electrical connecting conductors, which are led out from the housing basic body and are...
44	7564061	Field effect transistor and production method thereof A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source...
45	7560774	IC chip An IC chip, including a switch LDMOS device and an analog LDMOS device, is configured on a substrate having a first conductive type. Components of the two LDMOS devices respectively include two...
46	7560762	Asymmetric floating gate NAND flash memory A NAND-type flash memory device includes asymmetric floating gates overlying respective wordlines. A given floating gate is sufficiently coupled to its respective wordline such that a large gate...
47	7560759	Semiconductor device and method of manufacturing the same A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process....
48	7560758	MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions....
49	7560757	Semiconductor device with a structure suitable for miniaturization A semiconductor device which is suitable for miniaturization, capable of improving variations in characteristics of a transistor and enhancing the current driving capability comprises a...
50	7557436	Semiconductor device and IC card including supply voltage wiring lines formed in different areas and having different shapes Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so...

Matches 1 - 50 out of 827

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