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Match Document Document Title
8183607 Semiconductor device  
A semiconductor device features a semiconductor chip including a MOSFET, a first electrode of the MOSFET disposed on an obverse surface of the chip, a second, control electrode of the MOSFET...
8183629 Stacked trench metal-oxide-semiconductor field effect transistor device  
Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled...
8183606 Semiconductor device and method of manufacturing the same  
A semiconductor device comprises an insulated gate field effect transistor and a protection diode. The insulated gate field effect transistor has a gate electrode formed on a gate insulating film,...
8183145 Structure and methods of forming contact structures  
Methods and a structure. A method of forming contact structure includes depositing a silicide layer onto a substrate; depositing an electrically insulating layer over a first surface of the...
8183116 Method of manufacturing a double gate transistor  
A planar double-gate transistor is manufactured wherein crystallisation inhibitors are implanted into the channel region (16) of a semiconductor wafer (10), said wafer having a laminate structure...
8183559 Organic field effect transistor  
In an organic field effect transistor, including, on a substrate having an insulating surface, at least a gate electrode, a gate insulating film formed in contact with the gate electrode, an...
8183666 Semiconductor device including semiconductor zones and manufacturing method  
A semiconductor device includes first semiconductor zones of a first conductivity type having a first dopant species of the first conductivity type and a second dopant species of a second...
8178939 Interfacial barrier for work function modification of high performance CMOS devices  
A semiconductor structure may include a semiconductor bulk region with a gate stack on the semiconductor bulk region. The source region and the drain region in the semiconductor bulk region may be...
8178972 Semiconductor device and manufacturing method therefor  
A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of...
8178914 Method of fabricating back-illuminated imaging sensors  
A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The substrate includes an insulator layer and an epitaxial layer...
8174058 Integrated circuits with split gate and common gate FinFET transistors  
An integrated circuit includes common gate FinFET and split gate FinFET devices formed from different height fins at a semiconductor surface of a substrate. A patterned layer of gate electrode...
8174073 Integrated circuit structures with multiple FinFETs  
A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET...
8169009 Semiconductor device  
A semiconductor device includes N fins made of semiconductor regions aligned in parallel with each other in the top view plain, a gate electrode formed on both side surfaces of each of the N fins...
8168536 Realization of self-positioned contacts by epitaxy  
Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of...
8168985 Semiconductor module including a switch and non-central diode  
A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode...
8169032 Gate stacks and semiconductor constructions  
The invention includes methods of forming PMOS transistors and NMOS transistors. The NMOS transistors can be formed to have a thin silicon-containing material between a pair of metal nitride...
8169038 Semiconductor device and method of manufacturing the same  
A semiconductor device and a method of manufacturing the same are disclosed. The method includes forming ion impurity regions of a first conductivity type by forming a trench in a semiconductor...
8164124 Photodiode with multi-epi films for image sensor  
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor...
8163607 Semiconductor device and method of making the same  
In a method of the present invention during a salicide process, before a second thermal process, a dopant is implanted at a place located in a region ranging from a NixSi layer at meddle height...
8164125 Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit  
A semiconductor device includes an N type well region in a P type substrate. A source region of a MOSFET is laterally separated from a boundary of the well region, which includes the drain of the...
8159009 Semiconductor device having strain material  
A semiconductor device having strain material is disclosed. In a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first...
8154012 Thin film transistor  
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
8148715 Solid state charge qubit device  
This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up....
8148750 Transistor device having asymmetric embedded strain elements and related manufacturing method  
Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and...
8148219 Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same  
A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices...
8148780 Devices and systems relating to a memory cell having a floating body  
Methods, devices, and systems are disclosed for a memory cell having a floating body. A memory cell may include a transistor over an insulation layer, the transistor including a source, and a...
8148754 Low resistance integrated MOS structure  
The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby...
8143680 Gated diode with non-planar source region  
A gated-diode semiconductor device or similar component and a method of fabricating the device. The device features a gate structure disposed on a substrate over a channel and adjacent a source and...
8143645 Semiconductor device having a stacked multi structure that has layered insulated gate-type bipolar transistors  
Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor substrate. Each of the IGBTs includes a...
8138074 ICs with end gates having adjacent electrically connected field poly  
A method of forming an IC includes forming a first and a second gate portion using a poly mask. The first portion includes a first active poly gate having a line width W1 over an end of a first...
8138552 Semiconductor device and method of manufacturing the same  
A semiconductor device according to an embodiment of the present invention includes a substrate, a gate insulation film formed on the substrate, a gate electrode formed on the gate insulation film,...
8138041 In-situ silicon cap for metal gate electrode  
Structure and method of improving the performance of metal gate devices by depositing an in-situ silicon (Si) cap are disclosed. A wafer including a substrate and a dielectric layer is heated...
8134199 Nonvolatile semiconductor memory  
A nonvolatile semiconductor memory fabrication method including forming a first insulating film and a floating gate electrode material on a semiconductor substrate; forming a gate insulating film...
8134189 Semiconductor device and method of manufacturing the same  
Aimed at providing a highly reliable semiconductor device appropriately increased in stress at the channel region so as to improve carrier injection rate, thereby dramatically improved in...
8134206 Semiconductor device  
This invention provides a semiconductor device, which is used to manufacture two lateral high-voltage devices on the same substrate, where the voltages between maximum voltage terminals and minimum...
8129233 Method for fabricating thin film transistor  
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially...
8129773 Fin-type field effect transistor  
Disclosed herein are improved fin-type field effect transistor (FinFET) structures and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by...
8129794 Semiconductor device including MISFETs having different threshold voltages  
A semiconductor device includes a first MIS transistor, and a second MIS transistor having a threshold voltage higher than that of the first MIS transistor. The first MIS transistor includes a...
8129763 Metal-oxide-semiconductor device including a multiple-layer energy filter  
A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the...
8124482 MOS transistor with gate trench adjacent to drain extension field insulation  
An integrated circuit containing an MOS transistor with a trenched gate abutting an isolation dielectric layer over a drift region. The body well and source diffused region overlap the bottom...
8125429 Liquid crystal display device  
A small-sized active matrix type liquid crystal display device that may achieve large-sized display, high precision, high resolution and multi-gray scales is provided. Gray scale display is...
8125009 Mounting circuit substrate  
A semiconductor package containing a field effect transistor (FET) used in a high frequency band includes a mounting circuit substrate on which the semiconductor device is mounted. The mounting...
8125023 Vertical type power semiconductor device having a super junction structure  
In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in...
8125035 CMOS fabrication process  
Ultra high temperature (UHT) anneals above 1200 C for less than 100 milliseconds for PMOS transistors reduce end of range dislocations, but are incompatible with stress memorization technique (SMT)...
8120073 Trigate transistor having extended metal gate electrode  
A trigate device having an extended metal gate electrode comprises a semiconductor body having a top surface and opposing sidewalls formed on a substrate, an isolation layer formed on the substrate...
8120075 Semiconductor device with improved trenches  
A semiconductor device exhibiting enhanced carrier mobility within a channel region of the semiconductor device is disclosed. The semiconductor device includes a gate stack having first and second...
8120074 Bipolar semiconductor device and manufacturing method  
A bipolar semiconductor device with a hole current redistributing structure and an n-channel IGBT are provided. The n-channel IGBT has a p-doped body region with a first hole mobility and a sub...
8115235 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same  
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device...
8115253 Ultra high voltage MOS transistor device  
An ultra high voltage MOS transistor device includes a substrate having a first conductive type, a first well having a second conductive type and a second well having the first conductive type...
8110858 Thin film transistor array, method for manufacturing the same, and active matrix type display using the same  
One embodiment of the present invention is a thin film transistor array, having an insulating substrate and a stripe-shaped semiconductor layer for a plurality of transistors, the layer extending...
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