Matches 251 - 300 out of 842 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
7279721 Dual wavelength thermal flux laser anneal  
A thermal processing apparatus and method in which a first laser source, for example, a CO 2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for...
7279701 Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions  
A semiconductor device may include a semiconductor substrate and at least one metal oxide semiconductor field-effect transistor (MOSFET). The MOSFET may include spaced apart source and drain...
7276412 MIM capacitor of semiconductor device and manufacturing method thereof  
In a capacitor of a semiconductor device, a bottom electrode is formed on a substrate and has an uneven top surface. An interlayer insulation layer is formed on the substrate and has a via hole...
7276750 Semiconductor device having trench capacitor and fabrication method for the same  
A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged...
7276747 Semiconductor device having screening electrode and method  
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region.
7274056 Semiconductor constructions  
The invention includes a semiconductor construction having a pair of channel regions that have sub-regions doped with indium and surrounded by boron. A pair of transistor constructions are located...
7274050 Packaging and manufacturing of an integrated circuit  
Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a...
7274046 Tri-gate low power device and method for manufacturing the same  
The present invention provides a tri-gate lower power device and method for fabricating that tri-gate semiconductor device. The tri-gate device includes a first gate [ 455 ] located over a high...
7274055 Method for improving transistor performance through reducing the salicide interface resistance  
An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned...
7271431 Integrated circuit structure and method of fabrication  
According to the present invention, the integrated circuit includes isolation field regions on a semiconductor substrate. Gate dielectrics are formed on a surface of a substrate. Gate electrodes...
7268403 Power semiconductor device having an improved ruggedness  
The power semiconductor of the invention consists of an n+ drain area; an n− epitaxial area; p− body and p+ body areas formed on top of the n− epitaxial area in a striped configuration; an...
7265400 Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same  
An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the...
7265401 Semiconductor device having high dielectric constant gate insulating layer and its manufacture method  
A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric...
7259425 Tri-gate and gate around MOSFET devices and methods for making same  
A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a...
7259411 Vertical MOS transistor  
A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain...
7259426 Semiconductor device and its manufacturing method  
There is provided a power MISFET which includes a semiconductor region of a first conductivity, a semiconductor base region of a second conductivity, a pillar region, a first major electrode region...
7256465 Ultra-shallow metal oxide surface channel MOS transistor  
An ultra-shallow surface channel MOS transistor and method for fabricating the same have been provided. The method comprises: forming CMOS source and drain regions, and an intervening well region;...
7253461 Snapshot CMOS image sensor with high shutter rejection ratio  
A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a...
7253459 Semiconductor devices and methods of manufacture thereof  
A semiconductor device, for example a MOSFET or IGBT, includes a region ( 30, 36, 50 ) in the drain drift region ( 14 ) juxtaposed with its channel-accommodating region ( 15 ) and spaced from the...
7253460 Active matrix panel with two thin film transistors to a pixel  
An active matrix panel comprises a semiconductor thin film to constitute the switching element which includes••a common source-drain region having a bend portion with a channel region on one...
7247897 Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured  
In a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method, the method includes activating a surface of an...
7244991 Semiconductor integrated device  
A semiconductor integrated apparatus, including: an SOI (Silicon On Insulator) substrate which has a support substrate and an embedded insulation film; an NMOSFET, a PMOSFET and an FBC (Floating...
7242061 Semiconductor device  
The invention provides semiconductor devices having an output circuit in which transistors do not fail to achieve their original capability, and electrostatic breakdown is difficult to occur. A...
7242060 Semiconductor memory device including an SOI substrate  
A semiconductor memory device includes a plurality of N and P channel MOS transistors. The plurality of MOS transistors are formed on an SOI (Silicon On Insulator) substrate. Each MOS transistor...
7238975 Nonvolatile semiconductor memory device and manufacturing method therefor  
A nonvolatile semiconductor memory device including at least one MOS transistor in a peripheral circuit comprises a semiconductor substrate, isolation insulating films for defining a plurality of...
7235830 Semiconductor device and process for manufacturing the same  
The present invention provides a semiconductor device comprising: a semiconductor layer ( 3 ); a gate electrode ( 11 ) formed on the semiconductor layer ( 3 ) via a gate insulation film ( 10 ); and...
7235828 Semiconductor device with residual nickel from crystallization of semiconductor film  
It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. A crystalline silicon film having improved crystallinity is obtained by the...
7233020 Design for an organic light-emitting display that eliminates deterioration of the emission layer due to outgassing from an underlying layer  
An organic light-emitting display has a first pattern overlapping with one first electrode portion which overlaps with the via-hole. The first pattern is protruded upward as compared with the first...
7233038 Self masking contact using an angled implant  
A method of implanting, for example, a phosphorous plug over a charge collection region and a method of forming a contact over the phosphorous plug implant and charge collection region. The method...
7233045 Semiconductor device and system  
Disclosed herewith is a semiconductor device improved to prevent withstand voltage defects that might occur in each MOSFET used therein and a system to be designed easily and prevented from...
7230286 Vertical FET with nanowire channels and a silicided bottom contact  
A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and...
7230267 Organic semiconductor device  
An organic semiconductor device includes a organic semiconductor layer with carrier mobility formed between a pair of opposing electrodes. The device also includes a buffer layer that is inserted...
7229868 Organic field-effect transistor, method for structuring an OFET and integrated circuit  
The invention relates to an organic field-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The...
7227204 Structure for improved diode ideality  
A device is provided which includes a single-crystal semiconductor region disposed in a substrate. The single-crystal region includes a first semiconductor material and a diode disposed in the...
7227205 Strained-silicon CMOS device and method  
The present invention provides a semiconductor device and a method of forming thereof, in which a uniaxial strain is produced in the device channel of the semiconductor device. The uniaxial strain...
7224008 Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell  
The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window ( 3 ) in a layered structure that is located on top of...
7224949 ESD protection circuit for radio frequency input/output terminals in an integrated circuit  
An integrated circuit comprises an ESD protection circuit including an inductor coupled between an input terminal and a ground terminal at which an RF signal is applied. The inductor is designed so...
7223647 Method for forming integrated advanced semiconductor device using sacrificial stress layer  
An integrated advanced method for forming a semiconductor device utilizes a sacrificial stress layer as part of a film stack that enables spatially selective silicide formation in the device. The...
7214975 Semiconductor device with charge share countermeasure  
An aspect of the present invention provides a semiconductor device that includes a logic circuit including at least one transistor with a first channel type, a first transistor with a second...
7215577 Flash memory cell and methods for programming and erasing  
Flash memory cells are presented which comprise a dielectric material formed above a substrate channel region, a charge trapping material formed over the dielectric material, and a control gate...
7211846 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage  
A semiconductor component includes a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type that is located above the substrate. A channel...
7208794 High-density NROM-FINFET  
Semiconductor memory having memory cells, each including first and second conductively-doped contact regions and a channel region arranged between the latter, formed in a web-like rib made of...
7208805 Structures comprising a layer free of nitrogen between silicon nitride and photoresist  
The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material...
7205594 Semiconductor device with capacitor and manufacturing method of the same  
The present invention relates to a semiconductor device having capacitors. The configuration of the device includes: capacitor upper electrodes 14 a , 14 b formed via a dielectric film 13 on...
7205614 High density ROM cell  
A high density read-only memory (ROM) cell is installed on a silicon substrate for storing data. The ROM cell includes a first doped region being of a second conductive type installed on the...
7202525 Trench MOSFET with trench tip implants  
A trench type power semiconductor device includes a channel region atop an epitaxially silicon layer and a plurality of shallow gate electrode trenches within the channel region such that the...
7199403 Semiconductor arrangement having a MOSFET structure and a zener device  
The invention relates to a semiconductor arrangement having a MOSFET structure and an active zener function. A n + -doped zone and a p + -doped zone are provided at the bottom of a trench for the...
7195999 Metal-substituted transistor gates  
One aspect of this disclosure relates to a method for forming a transistor. According to various method embodiments, a gate dielectric is formed on a substrate, a substitutable structure is formed...
7195966 Methods of fabricating semiconductor devices including polysilicon resistors and related devices  
Methods of fabricating semiconductor devices are provided. Transistors are provided on a semiconductor substrate. A first interlayer insulating layer is provided on the transistors. A second...
7193281 Semiconductor device and process for producing the same  
There is provided a semiconductor device configured as follows. On a semiconductor substrate, a titanium oxide film which is an insulating film having a higher dielectric constant than that of a...
Matches 251 - 300 out of 842 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >